S T M8405. Dual E nhancement Mode F ield E ffect T ransistor ( N and P C hannel) ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
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1 S amhop Microelectronics C orp. S T M84 Nov.23, 24 ver 1.4 Dual E nhancement Mode F ield E ffect T raistor ( N and P C hannel) P R ODUC T S UMMR Y (N-C hannel) P R ODUC T S UMMR Y (P -C hannel) V DS S ID R DS (ON) ( m Ω ) Max V DS S ID R DS (ON) ( m Ω ) Max 3V 7 V G S = 1V VGS = 4.V -3V - VGS = -1V VGS = -4.V D1 D1 D2 D S O-8 1 BS OLUTE MXIMUM R TINGS (T =2 C unless otherwise noted) P arameter S ymbol N-C hannel P -C hannel Unit Drain-S ource Voltage VDS 3-3 V Gate-S ource Voltage VGS V Drain C urrent-c Ta -P ulsed a b 2 C 7 C ID IDM S 1 G 1 S 2 G Drain-S ource Diode Forward C urrent a IS Maximum P ower Dissipation Operating Junction and S torage Temperature R ange a T a= 2 C P D Ta=7 C 1.44 TJ, TS TG - to 1 C 2 W T HE R ML C HR C T E R IS T IC S a Thermal R esistance, Junction-to-mbient 62. C /W R J 1
2 S T M84 N-C hannel E L E C TR IC L C HR C TE R IS TIC S (T = 2 C unles s otherwis e noted) Parameter S ymbol Condition Min Typ Max Unit OF F C HR C T E R IS T IC S Drain-S ource Breakdown Voltage BV DS S V G S = V, ID = 2u 3 V Zero Gate Voltage Drain C urrent IDS S VDS 24V, VGS V = = 1 Gate-Body Leakage IGS S VGS 22V, VDS V = = 1 n ON C HR C T E R IS T IC S b Gate Threshold Voltage VGS (th) VDS = VGS, ID = 2u V Drain-S ource On-S tate R esistance R DS (ON) V G S = 1V, ID = 6.6 V G S = 4.V, ID = 3 4 On-S tate Drain Current ID(ON) V DS = V, V G S = 4.V 2 Forward Traconductance gf S V DS = V, ID = S DY NMIC C HR C T E R IS T IC S c Input C apacitance Output C apacitance R everse Trafer Capacitance Gate resistance S WIT C HING C HR C T E R IS T IC S c Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate C harge Gate-S ource Charge Gate-Drain C harge C IS S C OS S C R S S R g td(on) tr td(of F ) tf Q g Q gs Q gd VDS =1V, VG S = V f =1.MHZ VG S =V, VDS = V, f=1.mhz V DD = 1V ID = 6.6 V G S = 1V R G E N = 3 ohm V DS =1V, ID =6.6,V G S =1V V DS =1V, ID =6.6,V G S =4.V V DS =1V, ID = 6.6 V G S =1V C u m ohm m ohm ohm
3 S T M84 P-C hannel E L E C TR IC L C HR C TE R IS TIC S (T = 2 C unles s otherwis e noted) Parameter S ymbol Condition Min Typ Max Unit OF F C HR C T E R IS T IC S Drain-S ource Breakdown Voltage BV DS S V G S = V, ID = -2u -3 V Zero Gate Voltage Drain C urrent IDS S VDS -24V, VGS V = = -1 Gate-Body Leakage IGS S VGS 22V, VDS V = = 1 n ON C HR C T E R IS T IC S b Gate Threshold Voltage VGS (th) VDS = VGS, ID = -2u V Drain-S ource On-S tate R esistance R DS (ON) V G S = -1V, ID = - V G S = -4.V, ID = -4 6 On-S tate Drain Current ID(ON) V DS = -V, V G S = -1V 2 Forward Traconductance gf S V DS = -V, ID = - 9 S DY NMIC C HR C T E R IS T IC S c Input C apacitance Output C apacitance R everse Trafer Capacitance Gate resistance S WIT C HING C HR C T E R IS T IC S c Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate C harge Gate-S ource Charge Gate-Drain C harge C IS S C OS S C R S S R g td(on) tr td(of F ) tf Q g Q gs Q gd VDS =-1V, VG S = V f =1.MHZ VG S =V, VDS = V, f=1.mhz V DD = -1V R L = 2.7 ohm V G S = -1V R G E N = 3 ohm V DS =-1V, ID =-,V G S =-1V VDS =-1V, ID =-,VGS =-4.V V DS =-1V, ID = - V G S =-1V C u m ohm m ohm ohm
4 S T M84 ELECTRICL CHRCTERISTICS (T=2 C unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit DRIN-SOURCE DIODE CHRCTERISTICS Diode Forward Voltage Notes VSD a.surface Mounted on FR4 Board, t 1sec. b.pulse Test:Pulse Width 3 s, Duty Cycle 2%. c.guaranteed by design, not subject to production testing. N-Channel b VGS = V, Is =1.7 N-Ch VGS = V, Is =-1.7 P-Ch V C 2 16 VGS=4V C ID, Drain Current() VGS=1,9,8,7,6,V VGS=3V ID, Drain Current () C Tj=12 C VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics VGS, Gate-to-Source Voltage (V) Figure 2. Trafer Characteristics C, Capacitance (pf) 1 8 Ciss Coss Crss VDS, Drain-to Source Voltage (V) Figure 3. Capacitance RDS(ON), On-Resistance (Normalized) V G S =1V ID= Tj=( C ) T j, J unction T emperature ( C ) Figure 4. On-Resistance Variation with Drain Current and Temperature 4
5 S T M84 N-C hannel V th, Normalized G ate-s ource T hreshold V oltage V DS=V GS I D=2u B V DS S, Normalized Drain-S ource B reakdown V oltage 1.1 I D=-2u T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igur e. G ate T hr eshold V ar iation with T emper atur e F igur e 6. B r eakdown V oltage V ar iation with T emper atur e 1 2. gf S, T raconductance (S ) V DS=V Is, S ource-drain current () IDS, Drain-S ource C urrent () F igur e 7. T r aconductance V ar iation with Dr ain C ur r ent V S D, B ody Diode F orward V oltage (V ) F igur e 8. B ody Diode F or war d V oltage V ar iation with Sour ce C ur r ent
6 S T M84 P-C hannel 2 -V G S =1,9,8,7,6,V 2 2 C -ID, Drain C urrent () V G S =4V -VGS=3V -ID, Drain C urrent () C Tj=12 C VDS, Drain-to-S ource Voltage (V ) F igure 1. Output C har acter istics V G S, G ate-to-s ource Voltage (V ) F igure 2. Tr afer C har acter istics C, C apacitance (pf ) C iss C oss C rss V DS, Drain-to S ource Voltage (V ) F igure 3. C apacitance RDS(ON), On-Resistance (Normalized) V G S =-1V ID= Tj=( C ) T j, J unction T emperature ( C ) F igure 4. On-R esistance Var iation with Temper ature 6
7 S T M84 P-C hannel V th, Normalized G ate-s ource T hreshold V oltage V DS=V GS I D=-2u B V DS S, Normalized Drain-S ource B reakdown V oltage 1.1 I D=-2u T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igur e. G ate T hr eshold V ar iation with T emper atur e F igur e 6. B r eakdown V oltage V ar iation with T emper atur e 1 2. gf S, T raconductance (S ) V DS=-V Is, S ource-drain current () IDS, Drain-S ource C urrent () F igur e 7. T r aconductance V ar iation with Dr ain C ur r ent -V S D, B ody Diode F orward V oltage (V ) F igur e 8. B ody Diode F or war d V oltage V ar iation with Sour ce C ur r ent 7
8 S T M84 N-C hannel V G S, G ate to S ource V oltage (V ) V DS=1V I D= ID, Drain C urrent () R DS(ON) Limit.1 V G S =1V S ingle P ulse T =2 C DC 1s 1ms 1ms Qg, T otal G ate C harge ( ) F igur e 9. G ate C har ge P-C hannel V DS, Drain-S ource V oltage (V ) F igur e 1. M aximum Safe Oper ating r ea -V G S, G ate to S ource V oltage (V ) V DS=-1V I D= ID, Drain C urrent () R DS(ON) Limit 1ms 1ms.1 V G S =-1V S ingle P ulse T =2 C DC 1s Qg, T otal G ate C harge ( ) F igur e 9. G ate C har ge -V DS, B ody Diode F orward V oltage (V ) F igur e 1. M aximum Safe Oper ating r ea 8
9 S T M84 V DD VG S R G E N V IN G D R L V OUT td(on) V OUT ton toff tr td(off) 9% 9% 1% INV E R T E D 1% tf S VIN 1% 9% % % PULS E WIDTH 1 F igure 11. S witching T est C ircuit N-C hannel F igure 12. S witching Waveforms Normalized Traient Thermal Resistance on 1. R thj (t)=r (t) * R thj.1 2. R thj =S ee Datasheet Single Pulse 3. TJ M-T = P DM* R thj (t) 4. Duty Cycle, D=t1/t P-C hannel 1 Square Wave Pulse Duration(sec) Normalized Thermal Traient Impedance Curve P DM t1 t2 Normalized Traient Thermal Resistance t1 t2.2.1 Single Pulse on 1. R thj (t)=r (t) * R thj 2. R thj =S ee Datasheet 3. TJ M-T = P DM* R thj (t) 4. Duty Cycle, D=t1/t Square Wave Pulse Duration(sec) Normalized Thermal Traient Impedance Curve P DM
10 S T M84 PC K G E OUT LINE DIME NS IONS S O-8 1 L D E.1X4 e B C. TYP TYP..8 TYP. H S Y MB OLS 1 D E H L MILLIME T E R S MIN MX MIN INC HE S MX
11 S T M84 SO-8 Tape and Reel Data SO-8 Carrier Tape unit: PCKGE SOP 8N 1 B K D D1 E E1 E2 P P1 P2 T (MIN) SO-8 Reel UNIT: TPE SIZE REEL SIZE M N W W1 H K S G R V
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