STP16NF06L STP16NF06LFP

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1 STP16NF06L STP16NF06LFP N-CHNNEL 60V Ω - 16 TO-220/TO-220FP STripFET II POWER MOSFET TYPE V DSS R DS(on) I D STP16NF06L STP60NF06LFP 60 V 60 V <0.09 Ω <0.09 Ω TYPICL R DS (on) = 0.07Ω EXCEPTIONL dv/dt CPBILITY LOW GTE CHRGE T 100 o C LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size " stripbased process. The resulting traistor shows extremely high packing deity for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. PPLICTIONS MOTOR CONTROL, UDIO MPLIFIERS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID ND RELY DRIVERS DC-DC & DC-C CONVERTERS UTOMOTIVE ENVIRONMENT TO-220 TO-220FP INTERNL SCHEMTIC DIGRM BSOLUTE MXIMUM RTINGS Symbol Parameter Value Unit STP16NF06L STP16NF06LFP V DS Drain-source Voltage (V GS = 0) 60 V V DGR Drain-gate Voltage (R GS = 20 kω) 60 V V GS Gate- source Voltage ± 16 V I D Drain Current (continuous) at T C = 25 C 16 11(*) I D Drain Current (continuous) at T C = 100 C (*) I DM ( ) Drain Current (pulsed) 64 44(*) P tot Total Dissipation at T C = 25 C W Derating Factor W/ C dv/dt (1) Peak Diode Recovery voltage slope 23 V/ E S (2) Single Pulse valanche Energy 127 mj V ISO Iulation Withstand Voltage (DC) V T stg Storage Temperature Operating Junction Temperature -55 to 175 C T j ( ) Pulse width limited by safe operating area. (*) Current Limited by package s thermal resistance (1) I SD 16, di/dt 210/µs, V DD V (BR)DSS, T j T JMX. (2) Starting T j = 25 oc, I D = 8, V DD = 30V March /9

2 THERML DT TO-220 ELECTRICL CHRCTERISTICS (T case = 25 C unless otherwise specified) OFF TO-220FP Rthj-case Thermal Resistance Junction-case Max C/W Rthj-amb T l Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max C/W C V (BR)DSS Drain-source Breakdown Voltage I D = 250 µ, V GS = 0 60 V I DSS Zero Gate Voltage Drain Current (V GS = 0) V DS = Max Rating V DS = Max Rating T C = 125 C 1 10 µ µ I GSS Gate-body Leakage Current (V DS = 0) V GS = ± 16V ±100 n ON (1) V GS(th) Gate Threshold Voltage V DS = V GS I D = 250 µ V R DS(on) Static Drain-source On Resistance V GS = 5 V I D = 8 V GS = 10 V I D = Ω Ω DYNMIC g fs (*) Forward Traconductance V DS > I D(on) x R DS(on)max, I D =8 17 S C iss C oss C rss Input Capacitance Output Capacitance Reverse Trafer Capacitance V DS = 25V, f = 1 MHz, V GS = pf pf pf 2/9

3 ELECTRICL CHRCTERISTICS (continued) SWITCHING ON STP16NF06L/FP t d(on) t r Turn-on Delay Time Rise Time V DD = 30 V I D = 8 R G =4.7 Ω V GS = 4.5 V (Resistive Load, Figure 3) Q g Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 48 V I D = 16 V GS = 5V nc nc nc SWITCHING OFF t d(off) t f Turn-off Delay Time Fall Time V DD = 30 V I D = 8 R G =4.7Ω, V GS = 4.5 V (Resistive Load, Figure 3) SOURCE DRIN DIODE I SD I SDM ( ) Source-drain Current Source-drain Current (pulsed) V SD (*) Forward On Voltage I SD = 16 V GS = V t rr Q rr I RRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 16 di/dt = 100/µs V DD = 16 V T j = 150 C (see test circuit, Figure 5) nc (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. ( )Pulse width limited by safe operating area. Safe Operating rea for TO-220 Safe Operating rea for TO-220FP 3/9

4 Thermal Impedance Thermal Impedance for TO-220FP Output Characteristics Trafer Characteristics Traconductance Static Drain-source On Resistance 4/9

5 Gate Charge vs Gate-source Voltage Capacitance Variatio Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics 5/9

6 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching nd Diode Recovery Times 6/9

7 TO-220 MECHNICL DT DIM. mm inch MIN. TYP. MX. MIN. TYP. MX C D D E F F F G G H L L L L L L DI E C D D1 L2 F1 G1 G H2 Dia. F L5 L7 L9 F2 L6 L4 P011C 7/9

8 TO-220FP MECHNICL DT DIM. mm inch MIN. TYP. MX. MIN. TYP. MX B D E F F F G G H L L L L L Ø E D B L6 L7 L3 F1 F G1 H G L2 F2 L /9

9 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no respoibility for the coequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No licee is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specificatio mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics ll other names are the property of their respective owners STMicroelectronics - ll Rights Reserved STMicroelectronics GROUP OF COMPNIES ustralia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco -Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. 9/9

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