200V, N-CHANNEL. Absolute Maximum Ratings. Features: 1 PD

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1 PD REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) IRF V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF V 0.18Ω 18A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. TO-3 Features: n Repetitive Avalanche Ratings n Dynamic dv/dt Rating n Hermetically Sealed n Simple Drive Requirements n Ease of Paralleling Absolute Maximum Ratings Parameter VGS = 0V, TC = 25 C Continuous Drain Current 18 VGS = 0V, TC = 100 C Continuous Drain Current 11 IDM Pulsed Drain Current ➀ 72 TC = 25 C Max. Power Dissipation 125 W Units Linear Derating Factor 1.0 W/ C VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy ➁ 450 mj IAR Avalanche Current ➀ 18 A EAR Repetitive Avalanche Energy ➀ 12.5 mj dv/dt Peak Diode Recovery dv/dt ➂ 5.0 V/ns TJ Operating Junction -55 to 150 TSTG Storage Temperature Range Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) o C Weight 11.5(typical) g A For footnotes refer to the last page /24/01

2 Electrical Tj = 25 C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage 200 V VGS = 0V, ID = 1.0mA BVDSS/ TJ Temperature Coefficient of Breakdown 0.29 V/ C Reference to 25 C, ID = 1.0mA Voltage RDS(on) Static Drain-to-Source On-State 0.18 VGS = 10V, ID = 11A➃ Ω Resistance 0.21 VGS = 10V, ID =18A ➃ VGS(th) Gate Threshold Voltage V VDS = VGS, ID =250µA gfs Forward Transconductance 6.1 S ( ) VDS > 15V, IDS = 11A ➃ IDSS Zero Gate Voltage Drain Current 25 VDS= 160V,VGS=0V 250 µa VDS = 160V VGS = 0V, TJ = 125 C IGSS Gate-to-Source Leakage Forward 100 VGS = 20V na IGSS Gate-to-Source Leakage Reverse -100 VGS = -20V Qg Total Gate Charge VGS =10V, ID =18A Qgs Gate-to-Source Charge nc VDS = 100V Qgd Gate-to-Drain ( Miller ) Charge td(on) Turn-On Delay Time 20 VDD =100V, ID =18A, t r Rise Time 152 RG =9.1Ω ns td(off) Turn-Off Delay Time 58 tf Fall Time 67 LS + LD Total Inductance 6.1 nh Measured from drain lead (6mm/0.25in. from package) to source lead (6mm/0.25in. from package) Ciss Input Capacitance 1300 VGS = 0V, VDS = 25V Coss Output Capacitance 400 pf f = 1.0MHz Crss Reverse Transfer Capacitance 130 Ω Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions IS Continuous Source Current (Body Diode) 18 ISM Pulse Source Current (Body Diode) ➀ 72 A VSD Diode Forward Voltage 1.5 V Tj = 25 C, IS = 18A, VGS = 0V ➃ trr Reverse Recovery Time 500 ns Tj = 25 C, IF = 18A, di/dt 100A/µs QRR Reverse Recovery Charge 5.3 µc VDD 50V ➃ ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter Min Typ Max Units Test Conditions RthJC Junction to Case 1.0 C/W RthJA Junction to Ambient 30 Typical socket mount For footnotes refer to the last page 2

3 Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3

4 13 a& b Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4

5 V DS R D R G V GS D.U.T. + - V DD 10V Pulse Width 1 µs Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit V DS 90% Fig 9. Maximum Drain Current Vs. Case Temperature 10% V GS t d(on) t r t d(off) t f Fig 10b. Switching Time Waveforms Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5

6 15V V DS L DRIVER R G 10V 20V tp D.U.T I AS 0.01Ω + - V DD A Fig 12a. Unclamped Inductive Test Circuit tp V (BR)DSS Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ Q G 12V.2µF.3µF 10 V Q GS Q GD D.U.T. + V - DS V G V GS 3mA Charge I G I D Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6

7 Foot Notes: ➀ Repetitive Rating; Pulse width limited by ➂ ISD 18A, di/dt 160A/µs, maximum junction temperature. VDD 200V, TJ 150 C ➁ VDD = 50V, starting TJ = 25 C, L>2.1mH, Suggested RG =9.1 Ω Peak IL = 18A, ➃ Pulse width 300 µs; Duty Cycle 2% Case Outline and Dimensions TO-204AE (Modified TO-3) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: (0) IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) IR GERMANY: Saalburgstrasse 157, Bad Homburg Tel: (0) IR ITALY: Via Liguria 49, Borgaro, Torino Tel: IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0) IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore Tel: (0) IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, Tel: 886-(0) Data and specifications subject to change without notice.1/01 7

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