FDD V P-Channel PowerTrench MOSFET -40V, -14A, 44mΩ Features

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1 FDD443 4V P-Channel PowerTrench MOSFET -4V, -4A, 44mΩ Features Max r DS(on) = 44mΩ at V GS = -V, I D = -6.7A Max r DS(on) = 64mΩ at V GS = -4.5V, I D = -5.5A High performance trench technology for extremely low r DS(on) RoHS Compliant General Description November 7 This P-Channel MOSFET has been produced using Fairchild Semiconductor s proprietary PowerTrench technology to deliver low r DS(on) and optimized Bvdss capability to offer superior performance benefit in the applications. Application Inverter Power Supplies S G D G S D-PAK TO-5 (TO-5) D MOSFET Maximum Ratings T C = 5 C unless otherwise noted Symbol Parameter Ratings Units V DS Drain to Source Voltage -4 V V GS Gate to Source Voltage ± V Thermal Characteristics Drain Current -Continuous (Package limited) T C = 5 C -4 I D -Continuous (Silicon limited) T C = 5 C (Note ) -4 -Continuous T A = 5 C (Note a) -6.7 A -Pulsed -6 E AS Single Pulse Avalanche Energy (Note 3) 84 mj Power Dissipation T P C = 5 C 4 D Power Dissipation (Note a) 3 W T J, T STG Operating and Storage Junction Temperature Range -55 to +5 C R θjc Thermal Resistance, Junction to Case 3. R θja Thermal Resistance, Junction to Ambient (Note a) 4 Package Marking and Ordering Information C/W Device Marking Device Package Reel Size Tape Width Quantity FDD443 FDD443 D-PAK(TO-5) 3 mm 5 units 7 Fairchild Semiconductor Corporation

2 Electrical Characteristics T J = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV DSS Drain to Source Breakdown Voltage I D = -5µA, V GS = V -4 V BV DSS T J I DSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current I D = -5µA, referenced to 5 C -3 mv/ C V DS = -3V, - V GS = V T J = 5 C - I GSS Gate to Source Leakage Current V GS = ±V, V GS = V ± na On Characteristics V GS(th) Gate to Source Threshold Voltage V GS = V DS, I D = -5µA V V GS(th) T J r DS(on) Gate to Source Threshold Voltage Temperature Coefficient Drain to Source On Resistance I D = -5µA, referenced to 5 C 4.7 mv/ C V GS = -V, I D = -6.7A V GS = -4.5V, I D = -5.5A V GS = -V, I D = -6.7A, T J = 5 C g FS Forward Transconductance V DS = -5V, I D = -6.7A 6 S Dynamic Characteristics C iss Input Capacitance pf V DS = -V, V GS = V, C oss Output Capacitance 65 pf f = MHz C rss Reverse Transfer Capacitance 9 35 pf R g Gate Resistance f = MHz 4 Ω µa mω Switching Characteristics t d(on) Turn-On Delay Time 6 ns V DD = -V, I D = -6.7A t r Rise Time 5 6 ns V GS = -V, R GEN = 6Ω t d(off) Turn-Off Delay Time 35 ns t f Fall Time 7 4 ns Q g(tot) Total Gate Charge at V V DD = -V, I D = -6.7A 9 nc Q gs Gate to Source Gate Charge V GS = -V 3.4 nc Q gd Gate to Drain Miller Charge 4 nc Drain-Source Diode Characteristics V SD Source to Drain Diode Forward Voltage V GS = V, I S = -6.7A (Note ).86. V t rr Reverse Recovery Time 9 43 ns I F = -6.7A, di/dt = A/µs Q rr Reverse Recovery Charge 44 nc Notes: : R θja is sum of junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θjc is determined by the user s board design. a. 4 C/W when mounted on a in pad of oz copper b. 96 C/W when mounted on a minimum pad. : Pulse Test: Pulse Width < µs, Duty cycle <.%. 3: Starting T J = 5 C, L = 3mH, I AS = 7.5A, V DD = 4V, V GS = V.

3 Typical Characteristics T J = 5 C unless otherwise noted -ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE V GS = -V V GS = - 6V V GS = -5V V DS, DRAIN TO SOURCE VOLTAGE (V) Figure I D = -6.7A V GS = -V V GS = -4.5V V GS = -4V PULSE DURATION = 8µs V GS = - 3.V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE V GS = -V. PULSE DURATION = 8µs I D, DRAIN CURRENT(A) On Region Characteristics Figure. Normalized On-Resistance vs Drain Current and Gate Voltage T J, JUNCTION TEMPERATURE ( o C) rds(on), DRAIN TO SOURCE ON-RESISTANCE (mω) V GS = -3.V V GS = -4V V GS = -4.5V V GS = -5V V GS = -6V I D = -6.7A PULSE DURATION = 8µs V GS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage -I D, DRAIN CURRENT (A) PULSE DURATION = 8µs T J = 5 o C T J = -55 o C V GS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics -IS, REVERSE DRAIN CURRENT (A) V GS = V T J = 5 o C T J = -55 o C V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3

4 Typical Characteristics T J = 5 C unless otherwise noted -VGS, GATE TO SOURCE VOLTAGE(V) -IAS, AVALANCHE CURRENT(A) I D = -6.7A Figure V DD = -V V DD = -V Q g, GATE CHARGE(nC) V DD = -V 5. -V DS, DRAIN TO SOURCE VOLTAGE (V) Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage.. t AV, TIME IN AVALANCHE(ms) Figure 9. Unclamped Inductive Switching Capability CAPACITANCE (pf) -I D, DRAIN CURRENT (A) f = MHz V GS = V Limited by Package R θjc = 3. o C/W V GS = -V C iss C oss C rss V GS = -4.5V T C, CASE TEMPERATURE ( o C) Figure. Maximum Continuous Drain Current vs Case Temperature -ID, DRAIN CURRENT (A)..5 OPERATION IN THIS AREA MAY BE LIMITED BY r DS(on) SINGLE PULSE TJ = MAX RATED T C = 5 O C -V DS, DRAIN to SOURCE VOLTAGE (V) Figure. Forward Bias Safe Operating Area us ms ms ms P(PK), PEAK TRANSIENT POWER (W) FOR TEMPERATURES V GS = -V ABOVE 5 o C DERATE PEAK CURRENT AS FOLLOWS: 5 T I = I C 5 T C = 5 o C SINGLE PULSE t, PULSE WIDTH (s) Figure. Single Pulse Maximum Power Dissipation 4

5 Typical Characteristics T J = 5 C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, Z θjc...3 DUTY CYCLE-DESCENDING ORDER D = SINGLE PULSE t, RECTANGULAR PULSE DURATION (s) Figure 3. Transient Thermal Response Curve P DM t t NOTES: DUTY FACTOR: D = t /t PEAK T J = P DM x Z θjc x R θjc + T C 5

6 TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Build it Now CorePLUS CROSSVOLT CTL Current Transfer Logic EcoSPARK Fairchild Fairchild Semiconductor FACT Quiet Series FACT FAST FastvCore FPS FRFET Global Power Resource SM Green FPS Green FPS e-series GTO i-lo IntelliMAX ISOPLANAR MegaBuck MICROCOUPLER MicroFET MicroPak MillerDrive Motion-SPM OPTOLOGIC OPTOPLANAR PDP-SPM Power Power47 POWEREDGE Power-SPM PowerTrench Programmable Active Droop QFET QS QT Optoelectronics Quiet Series RapidConfigure SMART START SPM STEALTH SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SyncFET The Power Franchise TinyBoost TinyBuck TinyLogic TINYOPTO TinyPower TinyPWM TinyWire µserdes UHC UniFET VCX DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user.. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms tm This datasheet contains the design specifications for product Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete Formative or In Design First Production Full Production Not In Production development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I3 6

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