Power MOSFET FEATURES. IRFSL11N50APbF SiHFSL11N50A-E3. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 500 V Gate-Source Voltage V GS ± 30

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1 Power MOFET IRFL11N50, ihfl11n50 PRODUCT UMMRY V D (V) 500 R D(on) ( ) V G = 10 V 0.55 Q g (Max.) (nc) 51 Q gs (nc) 12 Q gd (nc) 23 Configuration ingle I 2 PK (TO262) G D FETURE Dynamic dv/dt Rating Repetitive valanche Rated Fast witching Ease of Paralleling imple Drive Requirements Compliant to RoH Directive 2002/95/EC DECRIPTION Third generation Power MOFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and costeffectiveness. D G ORDERING INFORMTION Package Lead (Pb)free NChannel MOFET I 2 PK (TO262) IRFL11N50PbF ihfl11n50e3 BOLUTE MXIMUM RTING (T C = 25 C, unless otherwise noted) PRMETER YMBOL LIMIT UNIT Drainource Voltage V D 500 V Gateource Voltage V G ± 30 Continuous Drain Current V G at 10 V T C = 25 C 11 I D T C = 100 C 7.0 Pulsed Drain Current a I DM 44 Linear Derating Factor 1.3 W/ C ingle Pulse valanche Energy b E 390 mj Repetitive valanche Current a I R 11 Repetitive valanche Energy a E R 19 mj Maximum Power Dissipation T C = 25 C P D 190 W Peak Diode Recovery dv/dt c dv/dt 4.1 V/ns Operating Junction and torage Temperature Range T J, T stg 55 to 175 oldering Recommendations (Peak Temperature) for 10 s 300 d C Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. tarting T J = 25 C, L = 6.4 mh, R G = 25, I = 11 (see fig. 12). c. I D 11, di/dt 185 /μs, V DD V D, T J 175 C. d. 1.6 mm from case. * Pb containing terminations are not RoH compliant, exemptions may apply Document Number: Rev. B, 30May11 1

2 IRFL11N50, ihfl11n50 THERML REITNCE RTING PRMETER YMBOL TYP. MX. UNIT Maximum Junctiontombient R thj 40 C/W Maximum JunctiontoCase (Drain) R thjc 0.75 PECIFICTION (T J = 25 C, unless otherwise noted) PRMETER YMBOL TET CONDITION MIN. TYP. MX. UNIT tatic Drainource Breakdown Voltage V D V G = 0, I D = 250 μ 500 V V D Temperature Coefficient V D /T J Reference to 25 C, I D = 1 m 0.57 V/ C Gateource Threshold Voltage V G(th) V D = V G, I D = 250 μ V Gateource Leakage I G V G = ± 30 V ± 100 n V D = 500 V, V G = 0 V 25 Zero Gate Voltage Drain Current I D V D = 400 V, V G = 0 V, T J = 150 C 250 μ Drainource Ontate Resistance R D(on) V G = 10 V I D = 6.6 b 0.55 Forward Transconductance g fs V D = 50 V, I D = 6.6 b 6.0 Dynamic Input Capacitance C iss V G = 0 V 1426 Output Capacitance C oss V D = 25 V 208 f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C rss 9.6 pf V D = 1.0 V, f = 1.0 MHz 1954 Output Capacitance C oss V G = 0 V V D = 400 V, f = 1.0 MHz 53 Effective Output Capacitance C oss eff. V D = 0 V to 400 V c 110 Total Gate Charge Q g 51 Gateource Charge Q gs I V G = 10 V D = 11, V D = 400 V see fig. 6 and 13 b 12 nc GateDrain Charge Q gd 23 TurnOn Delay Time t d(on) 14 Rise Time t r V DD = 250 V, I D = TurnOff Delay Time t d(off) R G = 9.1, R D = 22, see fig. 10 b 32 ns Fall Time t f 27 Between lead, D Internal Drain Inductance L D mm (0.25") from package and center of nh G Internal ource Inductance L die contact 7.5 Drainource Body Diode Characteristics Continuous ourcedrain Diode Current I MOFET symbol D 11 showing the integral reverse Pulsed Diode Forward Current a G I M p n junction diode 44 Body Diode Voltage V D T J = 25 C, I = 11, V G = 0 V b 1.5 V Body Diode Reverse t rr ns Recovery Time T J = 25 C, I F = 11, di/dt = 100 /μs b Body Diode Reverse Recovery Charge Q rr μc Forward TurnOn Time t on Intrinsic turnon time is negligible (turnon is dominated by L and L D ) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. c. C oss eff. is a fixed capacitance that gives the same charging time as C oss while V D is rising from 0 % to 80% V D. Document Number: Rev. B, 30May11

3 IRFL11N50, ihfl11n50 TYPICL CHRCTERITIC (25 C, unless otherwise noted) Fig. 1 Typical Output Characteristics Fig. 3 Typical Transfer Characteristics Fig. 2 Typical Output Characteristics Fig. 4 Normalized OnResistance vs. Temperature Document Number: Rev. B, 30May11 3

4 IRFL11N50, ihfl11n50 Fig. 5 Typical Capacitance vs. Draintoource Voltage Fig. 7 Typical ourcedrain Diode Forward Voltage Fig. 6 Typical Gate Charge vs. Gatetoource Voltage Fig. 8 Maximum afe Operating rea Document Number: Rev. B, 30May11

5 IRFL11N50, ihfl11n50 V D R D R G V G D.U.T. V DD 10 V Pulse width 1 µs Duty factor 0.1 % Fig. 10a witching Time Test Circuit V D 90 % 10 % V G t d(on) t r t d(off) t f Fig. 9 Maximum Drain Current vs. Case Temperature Fig. 10b witching Time Waveforms Fig. 11 Maximum Effective Transient Thermal Impedance, JunctiontoCase V D 15 V t p V D L Driver R G 20 V t p D.U.T. I 0.01 Ω V DD I Fig. 12a Unclamped Inductive Test Circuit Fig. 12b Unclamped Inductive Waveforms Document Number: Rev. B, 30May11 5

6 IRFL11N50, ihfl11n50 Fig. 12c Maximum valanche Energy vs. Drain Current Fig. 12d Typical Draintoource Voltage vs. valanche Current Current regulator ame type as D.U.T. 10 V Q G 12 V 0.2 µf 50 kω 0.3 µf Q G Q GD D.U.T. V D V G V G Charge Fig. 13a Basic Gate Charge Waveform 3 m Fig. 13b Gate Charge Test Circuit I G I D Current sampling resistors Document Number: Rev. B, 30May11

7 IRFL11N50, ihfl11n50 Peak Diode Recovery dv/dt Test Circuit D.U.T. Circuit layout considerations Low stray inductance Ground plane Low leakage inductance current transformer R g dv/dt controlled by R g Driver same type as D.U.T. I D controlled by duty factor D D.U.T. device under test V DD Driver gate drive P.W. Period D = P.W. Period V G = 10 V a D.U.T. l D waveform Reverse recovery current Body diode forward current di/dt D.U.T. V D waveform Diode recovery dv/dt V DD Reapplied voltage Inductor current Body diode forward drop Ripple 5 % I D Note a. V G = 5 V for logic level devices Fig. 11 For NChannel maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for ilicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see Document Number: Rev. B, 30May11 7

8 Package Information TO263B (HIGH VOLTGE) (Datum ) 3 4 E 4 L1 4 D H 1 2 C 3 C L2 B B 5 Detail c2 B Gauge plane 0 to 8 L3 L L4 Detail Rotated 90 CW scale 8:1 H 1 B eating plane 2 x b2 2 x e 2 x b M M B Plating 5 b1, b3 c ± M B Base metal E D1 4 (c) c1 5 Lead tip (b, b2) ection B B and C C cale: none E1 View 4 MILLIMETER INCHE MILLIMETER INCHE DIM. MIN. MX. MIN. MX. DIM. MIN. MX. MIN. MX D E b E b e 2.54 BC BC b H b L c L c L c L BC BC D L ECN: 82110Rev., 15ep08 DWG: 5970 Notes 1. Dimensioning and tolerancing per ME Y14.5M Dimensions are shown in millimeters (inches). 3. Dimension D and E do not include mold flash. Mold flash shall not exceed mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body at datum. 4. Thermal PD contour optional within dimension E, L1, D1 and E1. 5. Dimension b1 and c1 apply to base metal only. 6. Datum and B to be determined at datum plane H. 7. Outline conforms to JEDEC outline to TO263B. Document Number: Revision: 15ep08 1

9 Legal Disclaimer Notice Vishay Disclaimer LL PRODUCT, PRODUCT PECIFICTION ND DT RE UBJECT TO CHNGE WITHOUT NOTICE TO IMPROVE RELIBILITY, FUNCTION OR DEIGN OR OTHERWIE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, noninfringement and merchantability. tatements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. uch statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. ll operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, lifesaving, or lifesustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHCompliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) recast, unless otherwise specified as noncompliant. Please note that some Vishay documentation may still make reference to RoH Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12Mar12 1 Document Number: 91000

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