N - CHANNEL100V Ω - 30A - TO-220/TO-220FI POWER MOSFET 30 A 16 A

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1 IRF540 IRF540FI N - CHNNEL100V Ω TO-220/TO-220FI POWER MOSFET IRF540 IRF540FI TYPE V DSS R DS(on) I D 100 V 100 V <0.077Ω <0.077Ω TYPICL RDS(on) = Ω VLNCHE RUGGED TECHNOLOGY 100% VLNCHE TESTED REPETITIVE VLNCHE DT T 100 o C LOW GTE CHRGE HIGH CURRENT CPBILITY 175 o C OPERTING TEMPERTURE PPLICTION ORIENTED CHRCTERIZTION TO TO-220FI PPLICTIONS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID ND RELY DRIVERS DC-DC & DC-C CONVERTER UTOMOTIVE ENVIRONMENT (INJECTION, BS, IR-BG, LMP DRIVERS Etc.) INTERNL SCHEMTIC DIGRM BSOLUTE MXIMUM RTINGS Symbol Parameter Value Unit IRF530 IRF530FI V DS Drain-source Voltage (V GS =0) 100 V V DGR Drain- gate Voltage (RGS =20kΩ) 100 V V GS Gate-source Voltage ± 20 V I D Drain Current (continuous) at T c =25 o C ID Drain Current (continuous) at Tc =100 o C IDM( ) Drain Current (pulsed) P tot Total Dissipation at T c =25 o C W Derating Factor W/ o C Viso Iulation Withstand Voltage (DC) V Tstg Storage Temperature -65 to 175 Tj Max. Operating Junction Temperature 175 ( ) Pulse width limited by safe operating area (1) I SD 30 Α, di/dt 200 /µs, V DD V (BR)DSS, Tj T JMX o C o C pril /6

2 THERML DT TO-220 TO220-FI Rthj-case Thermal Resistance Junction-case Max o C/W Rt hj- amb Rthc-sink Tl Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose o C/W o C/W o C VLNCHE CHRCTERISTICS Symbol Parameter Max Value Unit I R E S valanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max Single Pulse valanche Energy (starting T j =25 o C, I D =I R,V DD =25V) mj ELECTRICL CHRCTERISTICS (Tcase =25 o C unless otherwise specified) OFF V (BR)DSS IDSS I GSS Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (V GS =0) Gate-body Leakage Current (VDS =0) ID =250µ VGS =0 100 V VDS =MaxRating V DS =MaxRating T c =125 o C V GS = ± 20 V ± 100 n 1 10 µ µ ON ( ) VGS(th) Gate Threshold V DS =V GS I D =250µ V Voltage RDS(on) Static Drain-source On VGS =10V ID= Ω Resistance ID(on) On State Drain Current VDS >ID(on) xrds(on)max V GS =10V 30 DYNMIC gfs ( ) Ciss C oss Crss Forward Traconductance Input Capacitance Output Capacitance Reverse Trafer Capacitance VDS >ID(on) xrds(on)max ID = S VDS =25V f=1mhz VGS = pf pf pf 2/6

3 ELECTRICL CHRCTERISTICS (continued) SWITCHING ON td(on) t r Turn-on Time Rise Time VDD =50V ID=15 RG=4.7 Ω VGS =10V Qg Q gs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD =80 V ID =30 VGS =10V nc nc nc SWITCHING OFF t r(voff) tf t c Off-voltage Rise Time Fall Time Cross-over Time V DD =80V I D =30 R G =4.7 Ω V GS =10V SOURCE DRIN DIODE I SD I SDM ( ) Source-drain Current Source-drain Current (pulsed) VSD ( ) Forward On Voltage ISD =50 VGS =0 1.5 V trr Reverse Recovery I SD =30 di/dt = 100 /µs 175 Qrr IRRM Time Reverse Recovery Charge Reverse Recovery VDD =30V Tj=150 o C µc Current ( ) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( ) Pulse width limited by safe operating area /6

4 TO-220 MECHNICL DT DIM. mm inch MIN. TYP. MX. MIN. TYP. MX C D D E F F F G G H L L L L L L DI D1 F G C D E L2 G1 H2 F1 Dia. L5 L7 L9 F2 L6 L4 P011C 4/6

5 ISOWTT220 MECHNICL DT DIM. mm inch MIN. TYP. MX. MIN. TYP. MX B D E F F F G G H L L L L L Ø H G B D E L6 L7 L3 F1 F F2 G L2 L4 P011G 5/6

6 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no respoability for the coequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No licee is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specificatio mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics SGS-THOMSON Microelectronics - Printed in Italy - ll Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPNIES ustralia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.... 6/6

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