SIPMOS Small-Signal-Transistor

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1 SIPMOS Small-Signal-Transistor Features N-channel Depletion mode dv /dt rated Product Summary V DS V R DS(on),max 3.5 Ω I DSS,min.4 A Available with V GS(th) indicator on reel Pb-free lead plating; RoHS compliant PG-SOT3 Qualified according to AEC Q Halogen-free according to IEC649-- Type Package Tape and Reel Information Marking Packaging Type BSP49 Package PG-SOT3 Tape and Reel Information H637: pcs/reel Marking BSP49 Packaging Non dry BSP49 BSP49 PG-SOT3 PG-SOT3 H637: pcs/reel H696: pcs/reel BSP49 BSP49 Non dry Non dry BSP49 PG-SOT3 H696: sorted in V GS(th) pcs/reel bands) BSP49 Non dry Maximum ratings, at T j =5 C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current I D T A =5 C.66 A T A =7 C.53 Pulsed drain current I D,pulse T A =5 C.6 Reverse diode dv /dt dv /dt I D =.66 A, V DS =6 V, di /dt = A/µs, T j,max =5 C 6 kv/µs Gate source voltage V GS ± V ESD Class (JESD-A4-HBM) B (>5,<6) Power dissipation P tot T A =5 C.8 W Operating and storage temperature T j, T stg C IEC climatic category; DIN IEC 68-55/5/56 ) see table on next page and diagram Rev.. page --8

2 Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, junction - soldering point (pin 4) R thjs K/W SMD version, device on PCB R thja minimal footprint cm cooling area ) Electrical characteristics, at T j =5 C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS =-3 V, I D =5 µa - - V Gate threshold voltage V GS(th) V DS =3 V, I D =4 µa Drain-source cutoff current I D(off) V DS = V, V GS =-3 V, T j =5 C V DS = V, V GS =-3 V, T j =5 C j - -. µa Gate-source leakage current I GSS V GS = V, V DS = V - - na On-state drain current I DSS V GS = V, V DS = V ma Drain-source on-state resistance R DS(on) V GS = V, I D =7 ma Ω V GS = V, I D =66 ma -..8 Transconductance g fs V DS > I D R DS(on)max, I D =.48 A S Threshold voltage V GS(th) sorted in bands 3) J V GS(th) V DS =3 V, I D =4 µa V K L M N ) Device on 4 mm x 4 mm x.5 mm epoxy PCB FR4 with 6 cm (single layer, 7 µm thick) copper area for drain connection. PCB is vertical in still air. 3) Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific band cannot be ordered separately. Rev.. page --8

3 Parameter Symbol Conditions Values Unit min. typ. max. Dynamic characteristics Input capacitance C iss pf Output capacitance C oss V GS =-3 V, V DS =5 V, f = MHz Reverse transfer capacitance C rss Turn-on delay time t d(on) ns Rise time t r V DD = V, V GS =- 7 V, Turn-off delay time t d(off) I D =.5 A, R G =6 Ω Fall time t f - 3 Gate Charge Characteristics Gate to source charge Q gs nc Gate to drain charge Q gd V DD =6 V, I D =.5 A, Gate charge total Q g V GS =-3 to 5 V - 4 Gate plateau voltage V plateau V Reverse Diode Diode continous forward current I S T A =5 C A Diode pulse current I S,pulse Diode forward voltage V SD V GS =-3 V, I F =.66 A, T j =5 C -.9. V Reverse recovery time t rr V R = V, I F =.5 A, ns Reverse recovery charge Q rr di F /dt = A/µs nc Rev.. page 3 --8

4 Power dissipation Drain current P tot =f(t A ) I D =f(t A ); V GS V P tot [W] T A [ C] T A [ C] 3 Safe operating area 4 Max. transient thermal impedance I D =f(v DS ); T A =5 C; D = Z thja =f(t p ) parameter: t p parameter: D =t p /T limited by on-state resistance µs µs.5 ms - ms Z thja [K/W].. - DC.5. single pulse V DS [V] t p [s] Rev.. page 4 --8

5 5 Typ. output characteristics 6 Typ. drain-source on resistance I D =f(v DS ); T j =5 C R DS(on) =f(i D ); T j =5 C parameter: V GS parameter: V GS V V 6 -. V V. V.5 V.8.5 V 5 -. V. V V. V. V -. V R DS(on) [Ω] 3 -. V V. V V DS [V] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D =f(v GS ); V DS > I D R DS(on)max g fs =f(i D ); T j =5 C g fs [S] V GS [V] Rev.. page 5 --8

6 9 Drain-source on-state resistance Typ. gate threshold voltage R DS(on) =f(t j ); I D =.7 A; V GS = V V GS(th) =f(t j ); V DS =3 V; I D =4 µa parameter: I D % R DS(on) [Ω] 4 98 % V GS(th) [V] -.5 typ - % typ T j [ C] T j [ C] Threshold voltage bands Typ. capacitances I D =f(v GS ); V DS =3 V; T j =5 C C =f(v DS ); V GS =-3 V; f = MHz Ciss N M L K J I D [ma] 4 µa C [pf]. Coss Crss V GS [V] 3 V DS [V] Rev.. page 6 --8

7 3 Forward characteristics of reverse diode 5 Typ. gate charge I F =f(v SD ) parameter: T j V GS =f(q gate ); I D =.5 A pulsed parameter: V DD 5.5 VDS(max) 5 C 5 C 4. VDS(max) 3. A.8 VDS(max) I F [A] 5 C, 98% V GS [V]. 5 C, 98% C, 98% V SD [V] Q gate [nc] 6 Drain-source breakdown voltage V BR(DSS) =f(t j ); I D =5 µa 4 V BR(DSS) [V] T j [ C] Rev.. page 7 --8

8 Package Outline: Footprint: Packaging: Dimensions in mm Rev.. page 8 --8

9 Published by Infineon Technologies AG 876 Munich, Germany 8 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.. page 9 --8

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