Description. TO-220F FDPF Series. Symbol Parameter FDP26N40 FDPF26N40 Units V DSS Drain to Source Voltage 400 V V GSS Gate to Source Voltage ±30 V

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1 FDP26N40 / FDPF26N40 N-Channel MOSFET 400V, 26A, 0.6Ω Features R DS(on) = 0.3Ω ( V GS = 0V, I D = 3A Low gate charge ( Typ. 48nC) Low C rss ( Typ. 30pF) Fast switching 00% avalanche tested Improved dv/dt capability RoHS compliant Description February 2008 UniFET TM tm These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power suppliesand active power factor correction. D G D S TO-220 FDP Series G D S TO-220F FDPF Series G S MOSFET Maximum Ratings T C = 25 o C unless otherwise noted* Symbol Parameter FDP26N40 FDPF26N40 Units V DSS Drain to Source Voltage 400 V V GSS Gate to Source Voltage ±30 V I D Drain Current -Continuous (T C = 25 o C) 26 26* -Continuous (T C = 00 o C) * A I DM Drain Current - Pulsed (Note ) 04 04* A E AS Single Pulsed Avalanche Energy (Note 2) 352 mj I AR Avalanche Current (Note ) 26 A E AR Repetitive Avalanche Energy (Note ) 26.5 mj dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P D Power Dissipation (T C = 25 o C) W - Derate above 25 o C W/ o C T J, T STG Operating and Storage Temperature Range -55 to +50 o C T L Maximum Lead Temperature for Soldering Purpose, /8 from Case for 5 Seconds 300 o C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FDP26N40 FDPF26N40 Units R θjc Thermal Resistance, Junction to Case R θcs Thermal Resistance, Case to Sink Typ R θja Thermal Resistance, Junction to Ambient o C/W 2008 Fairchild Semiconductor Corporation

2 Package Marking and Ordering Information T C = 25 o C unless otherwise noted Device Marking Device Package Reel Size Tape Width Quantity FDP26N40 FDP26N40 TO FDPF26N40 FDPF26N40 TO-220F Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BV DSS Drain to Source Breakdown Voltage I D = 250µA, V GS = 0V, T J = 25 o C V BV DSS T J On Characteristics Breakdown Voltage Temperature Coefficient Dynamic Characteristics I D = 250µA, Referenced to 25 o C V/ o C V I DSS Zero Gate Voltage Drain Current DS = 400V, V GS = 0V - - µa V DS = 320V, T C = 25 o C I GSS Gate to Body Leakage Current V GS = ±30V, V DS = 0V - - ±00 na V GS(th) Gate Threshold Voltage V GS = V DS, I D = 250µA V R DS(on) Static Drain to Source On Resistance V GS = 0V, I D = 3A Ω g FS Forward Transconductance V DS = 20V, I D = 3A (Note 4) S C iss Input Capacitance pf V DS = 25V, V GS = 0V C oss Output Capacitance pf f = MHz C rss Reverse Transfer Capacitance pf Q g(tot) Total Gate Charge at 0V nc Q gs Gate to Source Gate Charge V DS = 320V, I D = 26A nc Q gd Gate to Drain Miller Charge V GS = 0V (Note 4, 5) nc Switching Characteristics t d(on) Turn-On Delay Time ns t r Turn-On Rise Time V DD = 200V, I D = 26A ns t d(off) Turn-Off Delay Time R G = 25Ω ns t f Turn-Off Fall Time (Note 4, 5) ns Drain-Source Diode Characteristics I S Maximum Continuous Drain to Source Diode Forward Current A I SM Maximum Pulsed Drain to Source Diode Forward Current A V SD Drain to Source Diode Forward Voltage V GS = 0V, I SD = 26A V t rr Reverse Recovery Time V GS = 0V, I SD = 26A ns Q rr Reverse Recovery Charge di F /dt = 00A/µs (Note 4) µc Notes: : Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 4mH, I AS = 26A, V DD = 50V, R G = 25Ω, Starting T J = 25 C 3: I SD 26A, di/dt 200A/µs, V DD BV DSS, Starting T J = 25 C 4: Pulse Test: Pulse width 300µs, Duty Cycle 2% 5: Essentially Independent of Operating Temperature Typical Characteristics 2

3 Typical Performance Characteristics ID,Drain Current[A] Figure. On-Region Characteristics 70 0 V GS = 5.0V 0.0V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Figure 2. Transfer Characteristics. 250µs Pulse Test. V DS = 20V 2. T C = 25 o C µs Pulse Test V DS,Drain-Source Voltage[V] V GS,Gate-Source Voltage[V] Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current and Temperature 0.35 ID,Drain Current[A] o C 25 o C -55 o C RDS(ON) [Ω], Drain-Source On-Resistance V GS = 0V V GS = 20V *Note: T J = 25 o C I D, Drain Current [A] IS, Reverse Drain Current [A] 0 50 o C 25 o C. V GS = 0V µs Pulse Test V SD, Body Diode Forward Voltage [V] Capacitances [pf] Figure 5. Capacitance Characteristics Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd C iss C oss C rss *Note:. V GS = 0V 2. f = MHz VGS, Gate-Source Voltage [V] Figure 6. Gate Charge Characteristics V DS = 00V V DS = 200V V DS = 320V V DS, Drain-Source Voltage [V] *Note: I D = 26A Q g, Total Gate Charge [nc] 3

4 Typical Performance Characteristics (Continued) BVDSS, [Normalized] Drain-Source Breakdown Voltage Figure 7. Breakdown Voltage Variation vs. Temperature ID, Drain Current [A] V GS = 0V 2. I D = 250µA T J, Junction Temperature [ o C] Figure 9. Maximum Safe Operating Area - FDP26N Operation in This Area is Limited by R DS(on) 0ms DC ms 00µs 0.. T C = 25 o C 2. T J = 50 o C 3. Single Pulse V DS, Drain-Source Voltage [V] 0µs 800 RDS(on), [Normalized] Drain-Source On-Resistance ID, Drain Current [A] Figure 8. On-Resistance Variation vs. Temperature V GS = 0V 2. I D = 3A T J, Junction Temperature [ o C] Figure 0. Maximum Safe Operating Area T C, Case Temperature [ o C] Figure. Transient Thermal Response Curve - FDP26N40 Thermal Response [Z θjc ] Z θjc (t) = 0.5 o Single pulse C/W Max. 2. Duty Factor, D= t /t 2 3. T JM - T C = P DM * Z θjc (t) Rectangular Pulse Duration [sec] P DM t t 2 4

5 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5

6 Peak Diode Recovery dv/dt Test Circuit & Waveforms D U T + I S D V D S _ L D r iv e r R G S a m e T y p e a s D U T V G S d v / d t c o n t r o lle d b y R G I S D c o n t r o lle d b y p u ls e p e r io d V D D V G S ( D riv e r ) G a t e P u ls e W id t h D = G a t e P u ls e P e r io d 0 V I F M, B o d y D io d e F o r w a r d C u r r e n t I S D ( D U T ) d i/ d t I R M B o d y D io d e R e v e r s e C u r r e n t V D S ( D U T ) B o d y D io d e R e c o v e r y d v / d t V S D V D D B o d y D io d e F o r w a r d V o lt a g e D r o p 6

7 Mechanical Dimensions TO Dimensions in Millimeters 7

8 Mechanical Dimensions 5.80 ± ±0.0 TO-220F 0.6 ±0.20 ø3.8 ± ±0.20 (7.00) (0.70) 6.68 ±0.20 (.00x45 ) 5.87 ± ±0.30 MAX ±0.0 (30 ) 0.35 ±0.0 # ± TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 9.40 ± ±0.20 Dimensions in Millimeters 8

9 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. ACEx Build it Now CorePLUS CROSSVOLT CTL Current Transfer Logic EcoSPARK EZSWITCH * Fairchild Fairchild Semiconductor FACT Quiet Series FACT FAST FastvCore FlashWriter * FPS FRFET Global Power Resource SM Green FPS Green FPS e-series GTO i-lo IntelliMAX ISOPLANAR MegaBuck MICROCOUPLER MicroFET MicroPak MillerDrive Motion-SPM OPTOLOGIC OPTOPLANAR PDP-SPM Power220 POWEREDGE Power-SPM PowerTrench Programmable Active Droop QFET QS QT Optoelectronics Quiet Series RapidConfigure SMART START SPM STEALTH SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SupreMOS SyncFET The Power Franchise TinyBoost TinyBuck TinyLogic TINYOPTO TinyPower TinyPWM TinyWire μserdes UHC Ultra FRFET UniFET VCX * EZSWITCH and FlashWriter are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary No Identification Needed Obsolete First Production Full Production Not In Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I Fairchild Semiconductor Corporation

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