Features. Symbol JEDEC TO-220AB
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1 Data Sheet June 1999 File Number A, 5V,.4 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits. Formerly developmental type TA9771. Ordering Information PART NUMBER PACKAGE BRAND BUZ11 TO-22AB BUZ11 NOTE: When ordering, use the entire part number. Features 3A, 5V r DS(ON) =.4Ω SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Majority Carrier Device Related Literature - TB334 Guidelines for Soldering Surface Mount Components to PC Boards Symbol D G S Packaging JEDEC TO-22AB SOURCE DRAIN GATE DRAIN (FLANGE) 4-5 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. or Copyright Intersil Corporation 1999
2 Absolute Maximum Ratings T C = 25 o C, Unless Otherwise Specified BUZ11 UNITS Drain to Source Breakdown Voltage (Note 1) V Drain to Gate Voltage (R GS = 2kΩ) (Note 1) V DGR 5 V Continuous Drain Current T C = 3 o C I D 3 A Pulsed Drain Current (Note 3) I DM 12 A Gate to Source Voltage V GS ±2 V Maximum Power Dissipation P D 75 W Linear Derating Factor W/ o C Operating and Storage Temperature T J, T STG -55 to 15 o C DIN Humidity Category - DIN E IEC Climatic Category - DIN IEC /15/56 Maximum Temperature for Soldering Leads at.63in (1.6mm) from Case for 1s T L 3 Package Body for 1s, See Techbrief T pkg 26 CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. T J = 25 o C to 125 o C. BUZ11 o C o C Electrical Specifications T C = 25 o C, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BS I D = 25µA, V GS = V V Gate Threshold Voltage V GS(TH) V GS =, I D = 1mA (Figure 9) V Zero Gate Voltage Drain Current I DSS T J = 25 o C, = 5V, V GS = V µa T J = 125 o C, = 5V, V GS = V µa Gate to Source Leakage Current I GSS V GS = 2V, = V na Drain to Source On Resistance (Note 2) r DS(ON) I D = 15A, V GS = 1V (Figure 8) Ω Forward Transconductance (Note 2) g fs = 25V, I D = 15A (Figure 11) S Turn-On Delay Time t d(on) V CC = 3V, I D 3A, V GS = 1V, R GS = 5Ω, ns Rise Time t r R L = 1Ω ns Turn-Off Delay Time t d(off) ns Fall Time t f ns Input Capacitance C ISS = 25V, V GS = V, f = 1MHz (Figure 1) pf Output Capacitance C OSS pf Reverse Transfer Capacitance C RSS pf Thermal Resistance Junction to Case R θjc 1.67 o C/W Thermal Resistance Junction to Ambient R θja 75 o C/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Continuous Source to Drain Current I SD T C = 25 o C A Pulsed Source to Drain Current I SDM T C = 25 o C A Source to Drain Diode Voltage V SD T J = 25 o C, I SD = 6A, V GS = V V Reverse Recovery Time t rr T J = 25 o C, I SD = 3A, di SD /dt = 1A/µs, ns Reverse Recovery Charge Q RR V R = 3V µc NOTES: 2. Pulse Test: Pulse width 3ms, duty cycle 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). 4-6
3 Typical Performance Curves Unless Otherwise Specified V GS > 1V POWER DISSIPATION MULTIPLIER T A, CASE TEMPERATURE ( o C) T C, CASE TEMPERATURE ( o C) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE Z θjc, TRANSIENT THERMAL IMPEDANCE P DM t 1 SINGLE PULSE NOTES: t 2 DUTY FACTOR: D = t 1 /t 2 PEAK T J = P DM x Z θjc + T C t, RECTANGULAR PULSE DURATION (s) FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE OPERATION IN THIS AREA MAY BE LIMITED BY r DS(ON), DRAIN TO SOURCE VOLTAGE (V) 2.5µs 1µs 1µs 1ms T C = 25 o C 1ms T J = MAX RATED 1ms SINGLE PULSE DC P D = 75W V GS = 2V PULSE DURATION = 8µs DUTY CYCLE =.5% MAX 1V V GS = 8.V V GS = 7.5V V GS = 7.V V GS = 6.5V V GS = 6.V V GS = 5.5V V GS = 5.V V GS = 4.5V V GS = 4.V , DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS 4-7
4 Typical Performance Curves Unless Otherwise Specified (Continued) I DS(ON), DRAIN TO SOURCE CURRENT (A) PULSE DURATION = 8µs DUTY CYCLE =.5% MAX = 25V V GS, GATE TO SOURCE VOLTAGE (V) r DS(ON), ON-STATE RESISTANCE (Ω) PULSE DURATION = 8µs DUTY CYCLE =.5% MAX V GS = 5V 5.5V 6V 6.5V 7V 7.5V 8V 9V 1V 2V FIGURE 6. TRANSFER CHARACTERISTICS FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT r DS(ON), DRAIN TO SOURCE ON RESISTANCE (Ω) PULSE DURATION = 8µs DUTY CYCLE =.5% MAX I D = 15A, V GS = 1V T J, JUNCTION TEMPERATURE ( o C) V GS(TH), GATE THRESHOLD VOLTAGE (V) = V GS I D = 1mA T J, JUNCTION TEMPERATURE ( o C) FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE FIGURE 9. GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE C, CAPACITANCE (nf) C ISS C OSS C RSS 1-1 V GS = V, f = 1MHz C ISS = C GS + C GD C RSS = C GD C OSS C DS + C GD , DRAIN TO SOURCE VOLTAGE (V) FIGURE 1. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE g fs, TRANSCONDUCTANCE (S) PULSE DURATION = 8µs DUTY CYCLE =.5% MAX = 25V T J = 25 o C FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT 4-8
5 Typical Performance Curves Unless Otherwise Specified (Continued) I SD, SOURCE TO DRAIN CURRENT (A) 1 3 PULSE DURATION = 8µs DUTY CYCLE =.5% MAX T J = 25 o C 1 2 T J = 15 o C V SD, SOURCE TO DRAIN VOLTAGE (V) V GS, GATE TO SOURCE VOLTAGE (V) 15 I D = 45A = 1V 1 = 4V Q g, GATE CHARGE (nc) FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE Test Circuits and Waveforms t ON t d(on) t OFF t d(off) R L t r t f 9% 9% + R G V DD - 1% 1% DUT 9% V GS V GS 1% 5% PULSE WIDTH 5% FIGURE 14. SWITCHING TIME TEST CIRCUIT FIGURE 15. RESISTIVE SWITCHING WAVEFORMS CURRENT REGULATOR (ISOLATED SUPPLY) V DD 12V BATTERY.2µF 5kΩ.3µF SAME TYPE AS DUT Q gs Q gd Q g(tot) V GS D G DUT I g(ref) I G CURRENT SAMPLING RESISTOR S I D CURRENT SAMPLING RESISTOR I g(ref) FIGURE 16. GATE CHARGE TEST CIRCUIT FIGURE 17. GATE CHARGE WAVEFORMS 4-9
6 All Intersil semiconductor products are manufactured, assembled and tested under ISO9 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop Melbourne, FL 3292 TEL: (47) FAX: (47) For information regarding Intersil Corporation and its products, see web site EUROPE Intersil SA Mercure Center 1, Rue de la Fusee 113 Brussels, Belgium TEL: (32) FAX: (32) ASIA Intersil (Taiwan) Ltd. 7F-6, No. 11 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) FAX: (886)
7 This datasheet has been downloaded from: Datasheets for electronic components.
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Power MOSFET. IRF9520PbF SiHF9520-E3 IRF9520 SiHF9520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS - 100 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 10 V 0.60 Q g (Max.) (nc) 18 Q gs (nc) 3.0 Q gd (nc) 9.0 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S D PChannel
STP10NK60Z/FP, STB10NK60Z/-1 STW10NK60Z N-CHANNEL 600V-0.65Ω-10A TO-220/FP/D 2 PAK/I 2 PAK/TO-247 Zener-Protected SuperMESH Power MOSFET
STP10NK60Z/FP, STB10NK60Z/-1 STW10NK60Z N-CHANNEL 600V-0.65Ω-10A TO-220/FP/D 2 PAK/I 2 PAK/TO-247 Zener-Protected SuperMESH Power MOSFET TYPE V DSS R DS(on) I D Pw STP10NK60Z STP10NK60ZFP STB10NK60Z STB10NK60Z-1
Description. TO-220F FDPF Series. Symbol Parameter FDP26N40 FDPF26N40 Units V DSS Drain to Source Voltage 400 V V GSS Gate to Source Voltage ±30 V
FDP26N40 / FDPF26N40 N-Channel MOSFET 400V, 26A, 0.6Ω Features R DS(on) = 0.3Ω ( Typ.)@ V GS = 0V, I D = 3A Low gate charge ( Typ. 48nC) Low C rss ( Typ. 30pF) Fast switching 00% avalanche tested Improved
P-Channel 20-V (D-S) MOSFET
Si33DS P-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).39 at V GS = -.5 V -.7 -.5 at V GS = -.5 V -..68 at V GS = -.8 V - 3.5 FEATURES Halogen-free According to IEC 69-- Available
FDD4243 40V P-Channel PowerTrench MOSFET -40V, -14A, 44mΩ Features
FDD443 4V P-Channel PowerTrench MOSFET -4V, -4A, 44mΩ Features Max r DS(on) = 44mΩ at V GS = -V, I D = -6.7A Max r DS(on) = 64mΩ at V GS = -4.5V, I D = -5.5A High performance trench technology for extremely
IRF5305PbF. HEXFET Power MOSFET V DSS = -55V. R DS(on) = 0.06Ω I D = -31A
dvanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching PChannel Fully valanche Rated LeadFree Description Fifth Generation HEXFETs from International Rectifier utilize
STP16NF06L STP16NF06LFP
STP16NF06L STP16NF06LFP N-CHNNEL 60V - 0.07 Ω - 16 TO-220/TO-220FP STripFET II POWER MOSFET TYPE V DSS R DS(on) I D STP16NF06L STP60NF06LFP 60 V 60 V
STB75NF75 STP75NF75 - STP75NF75FP
STB75NF75 STP75NF75 - STP75NF75FP N-channel 75V - 0.0095Ω - 80A - TO-220 - TO-220FP - D 2 PAK STripFET II Power MOSFET General features Type V DSS R DS(on) I D STB75NF75 75V
SPW32N50C3. Cool MOS Power Transistor V DS @ T jmax 560 V
SPW3N5C3 Cool MOS Power Transistor V DS @ T jmax 56 V Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances
How To Make A Field Effect Transistor (Field Effect Transistor) From Silicon P Channel (Mos) To P Channel Power (Mos) (M2) (Mm2)
TPC811 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPC811 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Unit: mm Small footprint due
P-Channel 60 V (D-S) MOSFET
TP6K P-Channel 6 V (D-S) MOSFET G S PRODUCT SUMMARY V DS (V) R DS(on) ( ) V GS(th) (V) I D (ma) - 6 6 at V GS = - V - to - - 85 TO-6 (SOT-) Top View D Marking Code: 6Kwll 6K = Part Number Code for TP6K
IRLR8729PbF IRLU8729PbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
QFET TM FQP50N06. Features. TO-220 FQP Series
60V N-Channel MOSFET QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced
IRF150 [REF:MIL-PRF-19500/543] 100V, N-CHANNEL. Absolute Maximum Ratings
PD - 90337G REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRF150 100V 0.055Ω 38A IRF150 JANTX2N6764 JANTXV2N6764 [REF:MIL-PRF-19500/543]
W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery e 38. V/ns T J. mj I AR
PD 967 IRFB465PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D S V DSS HEXFET
STB4NK60Z, STB4NK60Z-1, STD4NK60Z STD4NK60Z-1, STP4NK60Z,STP4NK60ZFP
STB4NK60Z, STB4NK60Z-1, STD4NK60Z STD4NK60Z-1, STP4NK60Z,STP4NK60ZFP N-channel 600 V - 1.76 Ω - 4 A SuperMESH Power MOSFET DPAK - D 2 PAK - IPAK - I 2 PAK - TO-220 - TO-220FP Features Type V DSS R DS(on)
SMPS MOSFET. V DSS R DS (on) max I D
Applications l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l High speed power switching SMPS MOSFET PD 93773A IRF820A HEXFET Power MOSFET V DSS R DS (on) max I D 500V 3.0Ω 2.5A Benefits
Symbol Parameter Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive
BUZ11 N - CHANNEL 50V - 0.03Ω - 30A -TO-220 STripFET POWER MOSFET TYPE V DSS R DS(on) I D BUZ11 50 V < 0.04 Ω 30 A TYPICAL R DS(on) = 0.03 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT
W/ C V GS Gate-to-Source Voltage ± 16 dv/dt Peak Diode Recovery e 21
PD 97369 IRLB43PbF Applications l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
Features. T A=25 o C unless otherwise noted. Symbol Parameter Ratings Units. (Note 1b) 0.46
N-Channel.8 Vgs Specified PowerTrench MOSFET October 2 General Description This 2V N-Channel MOSFET uses Fairchild s high voltage PowerTrench process. It has been optimized for power management applications.
ICL232. +5V Powered, Dual RS-232 Transmitter/Receiver. Description. Features. Ordering Information. Applications. Functional Diagram.
ICL August V Powered, Dual RS Transmitter/Receiver Features Meets All RSC and V. Specifications Requires Only Single V Power Supply Onboard Voltage Doubler/Inverter Low Power Consumption Drivers ±V Output
MOSFET N-channel enhancement switching transistor IMPORTANT NOTICE. http://www.philips.semiconductors.com use http://www.nxp.com
Rev. 3 21 November 27 Product data sheet Dear customer, IMPORTANT NOTICE As from October 1st, 26 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets
N-Channel 60-V (D-S) MOSFET
7/7, VQJ/P, BS7 -Channel 6-V (D-S) MOSFET Part umber V (BR)DSS Min (V) r DS(on) Max ( ) V GS(th) (V) I D (A) 7 5 @ V GS = V.8 to. 7 7.5 @ V GS = V to.5.5 VQJ 6 5.5 @ V GS = V.8 to.5.5 VQP 5.5 @ V GS =
STP6NK60Z - STP6NK60ZFP STB6NK60Z - STB6NK60Z-1 N-CHANNEL 600V - 1Ω - 6A TO-220/TO-220FP/D 2 PAK/I 2 PAK Zener-Protected SuperMESH Power MOSFET
STP6NK60Z - STP6NK60ZFP STB6NK60Z - STB6NK60Z-1 N-CHANNEL 600V - 1Ω - 6A TO-220/TO-220FP/D 2 PAK/I 2 PAK Zener-Protected SuperMESH Power MOSFET TYPE V DSS R DS(on) I D Pw STP6NK60Z STP6NK60ZFP STB6NK60Z
N-Channel Logic Level Enhancement Mode Field Effect Transistor. Features. TA=25 o C unless otherwise noted
October 5 BSS38 BSS38 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild s proprietary,
200V, N-CHANNEL. Absolute Maximum Ratings. Features: www.irf.com 1 PD - 90370
PD - 90370 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) IRF240 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF240 200V 0.18Ω 18A The HEXFET technology
V DS 100 V R DS(ON) typ. @ 10V 72.5 m: Q g typ. 15 nc Q sw typ. 8.3 nc R G(int) typ. 2.2 Ω T J max 175 C
PD 9698A DIGITAL AUDIO MOSFET IRFB422PbF Features Key parameters optimized for ClassD audio amplifier applications Low R DSON for improved efficiency Low Q G and Q SW for better THD and improved efficiency
Lower Conduction Losses Low Thermal Resistance to PCB ( 0.5 C/W)
PD -97428 IRFH5020PbF HEXFET Power MOSFET V DS 200 V 55 m: R DS(on) max (@V GS = V) Q g (typical) 36 nc R G (typical).9 : I D (@T c(bottom) = 25 C) 43 A PQFN 5X6 mm Applications Secondary Side Synchronous
STB60N55F3, STD60N55F3, STF60N55F3 STI60N55F3, STP60N55F3, STU60N55F3
STB60N55F3, STD60N55F3, STF60N55F3 STI60N55F3, STP60N55F3, STU60N55F3 N-channel 55 V, 6.5 mω, 80 A, DPAK, IPAK, D 2 PAK, I 2 PAK, TO-220 TO-220FP STripFET III Power MOSFET Features Type V DSS R DS(on)
V DSS I D. W/ C V GS Gate-to-Source Voltage ±30 E AS (Thermally limited) mj T J Operating Junction and -55 to + 175
PD 973B IRFB432PbF Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits Benefits l Low
STP6N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP6N60FI 600 V < 1.2 Ω 3.8 A TYPICAL R DS(on) =1Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT
STGW40NC60V N-CHANNEL 50A - 600V - TO-247 Very Fast PowerMESH IGBT
N-CHANNEL 50A - 600V - TO-247 Very Fast PowerMESH IGBT Table 1: General Features STGW40NC60V 600 V < 2.5 V 50 A HIGH CURRENT CAPABILITY HIGH FREQUENCY OPERATION UP TO 50 KHz LOSSES INCLUDE DIODE RECOVERY
DE275-102N06A RF Power MOSFET
N-Channel Enhancement Mode Low Q g and R g High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings V DSS T J = 25 C to 150 C 00 V V DGR T J = 25 C
AUIRFR8405 AUIRFU8405
Features Advanced Process Technology New Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUTOMOTIVE
W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 5.0. V/ns T J. mj I AR. Thermal Resistance Symbol Parameter Typ. Max.
PD 9727 IRFP326PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
Projet 5 - K3501 / Onduleur 12V DC - 220V AC.
Thierry LEQUEU Septembre 26 [DATA76] Fichier : PROJETS-IUT1.DOC Projet 5 - K351 / Onduleur 12V DC - 22V AC. Projet : PROJETS-IUT1 Info : kit Velleman, [DATA12]. Révision : 24 janvier 2 5.1 Liste des documents
AUIRLR2905 AUIRLU2905
Features dvanced Planar Technology Logic Level Gate Drive Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Fully valanche Rated Repetitive valanche llowed up to Tjmax Lead-Free,
SSM3K335R SSM3K335R. 1. Applications. 2. Features. 3. Packaging and Pin Configuration. 2012-07-19 Rev.3.0. Silicon N-Channel MOS (U-MOS -H)
MOSFETs Silicon N-Channel MOS (U-MOS-H) SSM3K335R SSM3K335R 1. Applications Power Management Switches DC-DC Converters 2. Features (1) 4.5-V gate drive voltage. (2) Low drain-source on-resistance : R DS(ON)
60 V, 360 ma N-channel Trench MOSFET. Symbol Parameter Conditions Min Typ Max Unit V DS drain-source T amb = 25 C - - 60 V
Rev. 02 29 July 20 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic
IRF830. N - CHANNEL 500V - 1.35Ω - 4.5A - TO-220 PowerMESH MOSFET
IRF830 N - CHANNEL 500V - 1.35Ω - 4.5A - TO-220 PowerMESH MOSFET TYPE V DSS R DS(on) I D IRF830 500 V < 1.5 Ω 4.5 A TYPICAL R DS(on) = 1.35 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY
TN2410L, VN2406D/E, VN2410L/LS
TNL, VN6D/E, VNL/L N-Channel Enhancement-Mode MOFET Transistors Part Number V (BR)D Min (V) r D(on) Max ( ) V (th) (V) (A) TNL @ V =.5 V.5 to.8.8 VN6D 6 @ V = V.8 to. VN6L 6 @ V = V.8 to.8 VNL @ V = V.8
5A 3A. Symbol Parameter Value Unit
STP5NA50 STP5NA50FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP5NA50 STP5NA50FI 500 V 500 V
BUK92150-55A. 12 V and 24 V loads Automotive and general purpose power switching Motors, lamps and solenoids
DPAK 1 June 1 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed