Power MOSFET FEATURES. IRF610PbF SiHF610-E3 IRF610 SiHF610. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 200 V Gate-Source Voltage V GS ± 20

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1 Power MOSFET PRODUCT SUMMARY (V) 00 R DS(on) ( ) = 1.5 Q g (Max.) (nc) 8. Q gs (nc) 1.8 Q gd (nc) 4.5 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Compliant to RoHS Directive 00/95/EC Available RoHS* COMPLIANT TO0AB G DS G D S NChannel MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and costeffectiveness. The TO0AB package is universally preferred for all commercialindustrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO0AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package Lead (Pb)free SnPb TO0AB IRF610PbF SiHF610E3 IRF610 SiHF610 ABSOLUTE MAXIMUM RATINGS (T C = 5 C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT DrainSource Voltage 00 V GateSource Voltage ± 0 Continuous Drain Current at T C = 5 C 3.3 I D T C = 100 C.1 A Pulsed Drain Current a I DM 10 Linear Derating Factor 0.9 W/ C Single Pulse Avalanche Energy b E AS 64 mj Repetitive Avalanche Current a I AR 3.3 A Repetitive Avalanche Energy a E AR 3.6 mj Maximum Power Dissipation T C = 5 C P D 36 W Peak Diode Recovery dv/dt c dv/dt 5.0 V/ns Operating Junction and Storage Temperature Range T J, T stg 55 to 150 Soldering Recommendations (Peak Temperature) for 10 s 300 d C Mounting Torque 63 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. V DD = 50 V, starting T J = 5 C, L = 8.8 mh, R g = 5, I AS = 3.3 A (see fig. 1). c. I SD 3.3 A, di/dt 70 A/μs, V DD, T J 150 C. d. 1.6 mm from case. 10 lbf in 1.1 N m * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: S110510Rev. B, 1Mar11 1

2 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum JunctiontoAmbient R thja 6 CasetoSink, Flat, Greased Surface R thcs 0.50 C/W Maximum JunctiontoCase (Drain) R thjc 3.5 SPECIFICATIONS (T J = 5 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static DrainSource Breakdown Voltage = 0 V, I D = 50 μa 00 V Temperature Coefficient /T J Reference to 5 C, I D = 1 ma 0.30 V/ C GateSource Threshold Voltage (th) =, I D = 50 μa V GateSource Leakage I GSS = ± 0 V ± 100 na = 00 V, = 0 V 5 Zero Gate Voltage Drain Current I DSS = 160 V, = 0 V, T J = 15 C 50 μa DrainSource OnState Resistance R DS(on) = I D =.0 A b 1.5 Forward Transconductance g fs = 50 V, I D =.0 A b 0.8 S Dynamic Input Capacitance C iss = 0 V, 140 Output Capacitance C oss = 5 V, 53 pf Reverse Transfer Capacitance C rss f = 1.0 MHz, see fig Total Gate Charge Q g 8. GateSource Charge Q gs I = D = 3.3 A, = 160 V, see fig. 6 and 13 b 1.8 nc GateDrain Charge Q gd 4.5 TurnOn Delay Time t d(on) 8. Rise Time t r V DD = 100 V, I D = 3.3 A, 17 TurnOff Delay Time t d(off) R g = 4, R D = 30, see fig. 10 b 14 ns Fall Time t f 8.9 D Internal Drain Inductance L Between lead, D mm (0.5") from package and center of nh G Internal Source Inductance L S die contact 7.5 DrainSource Body Diode Characteristics Continuous SourceDrain Diode Current I MOSFET symbol D S 3.3 showing the integral reverse Pulsed Diode Forward Current a G I SM p n junction diode 10 Body Diode Voltage V SD T J = 5 C, I S = 3.3 A, = 0 V b.0 V Body Diode Reverse t rr ns Recovery Time T J = 5 C, I F = 3.3 A, di/dt = 100 A/μs b Body Diode Reverse Recovery Charge Q rr μc Forward TurnOn Time t on Intrinsic turnon time is negligible (turnon is dominated by L S and L D ) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle %. S S A Document Number: 9103 S110510Rev. B, 1Mar11

3 TYPICAL CHARACTERISTICS (5 C, unless otherwise noted) 9103_ Top Bottom 15 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V 4.5 V V 0 µs Pulse Width T C = 5 C, DraintoSource Voltage (V) 9103_ µs Pulse Width = 50 V , GatetoSource Voltage (V) Fig. 1 Typical Output Characteristics, T C = 5 C Fig. 3 Typical Transfer Characteristics 9103_ Top Bottom 15 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V 4.5 V , DraintoSource Voltage (V) 4.5 V 0 µs Pulse Width T C = 150 C R DS(on), DraintoSource On Resistance (Normalized) 9103_ I D = 3.3 A = T J, Junction Temperature ( C) Fig. Typical Output Characteristics, T C = 150 C Fig. 4 Normalized OnResistance vs. Temperature Document Number: S110510Rev. B, 1Mar11 3

4 Capacitance (pf) 9103_ = 0 V, f = 1 MHz C iss = C gs C gd, C ds Shorted C rss = C gd C oss = C ds C gd C iss C oss C rss, DraintoSource Voltage (V) I SD, Reverse Drain Current (A) 9103_ C C = 0 V V SD, SourcetoDrain Voltage (V) Fig. 5 Typical Capacitance vs. DraintoSource Voltage Fig. 7 Typical SourceDrain Diode Forward Voltage, GatetoSource Voltage (V) I D = 3.3 A = 40 V = 100 V = 160 V _06 Q G, Total Gate Charge (nc) For test circuit see figure _ Operation in this area limited by R DS(on) 1 T C = 5 C T J = 150 C Single Pulse 5, DraintoSource Voltage (V) 100 µs 1 ms 10 ms Fig. 6 Typical Gate Charge vs. GatetoSource Voltage Fig. 8 Maximum Safe Operating Area Document Number: S110510Rev. B, 1Mar11

5 R D 4.0 R G D.U.T. V DD Pulse width 1 µs Duty factor 0.1 % Fig. 10a Switching Time Test Circuit 9103_ T C, Case Temperature ( C) 90 % 10 % t d(on) t r t d(off) t f Fig. 9 Maximum Drain Current vs. Case Temperature Fig. 10b Switching Time Waveforms 10 Thermal Response (Z thjc ) Single Pulse (Thermal Response) P DM t 1 t Notes: 1. Duty Factor, D = t 1 /t. Peak T j = P DM x Z thjc T C 9103_11 t 1, Rectangular Pulse Duration (s) Fig. 11 Maximum Effective Transient Thermal Impedance, JunctiontoCase Document Number: S110510Rev. B, 1Mar11 5

6 Vary t p to obtain required I AS R G L D.U.T I AS V DD t p V DD t p 0.01 Ω I AS Fig. 1a Unclamped Inductive Test Circuit Fig. 1b Unclamped Inductive Waveforms E AS, Single Pulse Energy (mj) 9103_1c Top Bottom V DD = 50 V Starting T J, Junction Temperature ( C) I D 1.5 A.1 A 3.3 A Fig. 1c Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. Q G 1 V 0. µf 50 kω 0.3 µf Q GS Q GD D.U.T. V DS V G Charge Fig. 13a Basic Gate Charge Waveform 3 ma Fig. 13b Gate Charge Test Circuit I G I D Current sampling resistors Document Number: S110510Rev. B, 1Mar11

7 Peak Diode Recovery dv/dt Test Circuit D.U.T. Circuit layout considerations Low stray inductance Ground plane Low leakage inductance current transformer R g dv/dt controlled by R g Driver same type as D.U.T. I SD controlled by duty factor D D.U.T. device under test V DD Driver gate drive P.W. Period D = P.W. Period = a D.U.T. l SD waveform Reverse recovery current Body diode forward current di/dt D.U.T. waveform Diode recovery dv/dt V DD Reapplied voltage Inductor current Body diode forward drop Ripple 5 % I SD Note a. = 5 V for logic level devices Fig. 14 For NChannel maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see Document Number: S110510Rev. B, 1Mar11 7

8 Package Information TO01 D L H(1) Q L(1) 1 E 3 M * b(1) Ø P A F DIM. MILLIMETERS INCHES MIN. MAX. MIN. MAX. A b b(1) c D E e e(1) F H(1) J(1) L L(1) Ø P Q ECN: X150364Rev. C, 14Dec15 DWG: 6031 Note M* = 0.05 inches to inches (dimension including protrusion), heatsink hole for HVM e b C e(1) J(1) ASE Package Picture Xi an Revison: 14Dec15 1 Document Number: 6654 For technical questions, contact: THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

9 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, noninfringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, lifesaving, or lifesustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Revision: 13Jun16 1 Document Number: 91000

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