Features 1.7 A, 20 V. R DS(ON) Symbol Parameter Ratings Units

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1 N-Channel.5V Specified PowerTrench TM MOSFET April 999 General Description This N-Channel.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Applications DC/DC converter Load switch Features.7 A, V. R DS(ON) =.7 V GS =.5 V R DS(ON) =. V GS =.5 V. Low gate charge (3.5nC typical). High performance trench technology for extremely low R DS(ON). High power and current handling capability. D D S TM SuperSOT -3 G G S Absolute Maximum Ratings T A = 5 C unless otherwise noted Symbol Parameter Ratings Units V DSS Drain-Source Voltage V V GSS Gate-Source Voltage ± V I D Drain Current - Continuous (Note a).7 A - Pulsed P D Power Dissipation for Single Operation (Note a).5 W (Note b).6 T J, T stg Operating and Storage Junction Temperature Range -55 to +5 C Thermal Characteristics R θ JA Thermal Resistance, Junction-to-Ambient (Note a) 5 C/W R θ JC Thermal Resistance, Junction-to-Case (Note ) 75 C/W Package Outlines and Ordering Information Device Marking Device Reel Size Tape Width Quantity mm 3 units 999 Fairchild Semiconductor Corporation

2 Electrical Characteristics T A = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV DSS Drain-Source Breakdown Voltage V GS = V, I D = 5 µa V BVDSS Breakdown Voltage Temperature I D = 5 µa,referenced to 5 C mv/ C T J Coefficient I DSS Zero Gate Voltage Drain Current V DS = 6 V, V GS = V µa I GSSF I GSSR Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse V GS = V, V DS = V na V GS = - V, V DS = V - na On Characteristics (Note ) V GS(th) Gate Threshold Voltage V DS = V GS, I D = 5 µa..9.5 V VGS(th) T J R DS(ON) Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance I D = 5 µa,referenced to 5 C -3 mv/ C V GS =.5 V, I D =.7 A V GS =.5 V, I D =.7 A,T J = 5 C V GS =.5 V, I D =.5 A I D(on) On-State Drain Current V GS =.5 V, V DS = 5 V A g FS Forward Transconductance V DS = 5 V, I D =.5 A 7 S Dynamic Characteristics C iss Input Capacitance V DS = V, V GS = V, 3 pf C oss Output Capacitance f =. MHz pf Reverse Transfer Capacitance pf C rss Switching Characteristics (Note ) t d(on) Turn-On Delay Time V DD = V, I D = A, 5 5 ns t r Turn-On Rise Time V GS =.5 V, R GEN = 6 Ω.5 7 ns t d(off) Turn-Off Delay Time ns t f Turn-Off Fall Time Ω 3 ns Q g Total Gate Charge V DS = V, I D =.7 A, nc Q gs Gate-Source Charge V GS =.5 V,.55 nc Gate-Drain Charge.95 nc Q gd Drain-Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current. A V SD Drain-Source Diode Forward Voltage V GS = V, I S =. A (Note ).7. V Notes: : R θja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θca is determined by the user's board design. a) 5 C/W when mounted on a. in Pad of oz. Cu. Scale : on letter size paper : Pulse Test: Pulse Width 3 µs, Duty Cycle.% b) 7 C/W when mounted on a minimum pad.

3 Typical Characteristics V GS =.5V 3.V.5V 3.5V 6.V.5V R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE V GS =.V.5V 3.V 3.5V.V.5V V DS, DRAIN TO SOURCE VOLTAGE (V). 6 Figure. On-Region Characteristics. Figure. On-Resistance Variation with Drain Current and Gate Voltage. R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE.6... I D =.7A V GS =.5V R DS(ON), ON-RESISTANCE (OHM) T A = 5 o C T A = 5 o C I D =.5A T J, JUNCTION TEMPERATURE ( o C) 3 5 V GS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure. On-Resistance Variation with Gate-to-Source Voltage. V DS = 5V T A = -55 o C 5 o C 5 o C V GS = V 6 I S, REVERSE DRAIN CURRENT (A)... T A = 5 o C 5 o C -55 o C 3 V GS, GATE TO SOURCE VOLTAGE (V) V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.

4 Typical Characteristics (continued) V GS, GATE-SOURCE VOLTAGE (V) 5 I D =.7A V DS = 5V V 5V Q g, GATE CHARGE (nc) CAPACITANCE (pf) 5 3 C ISS f = MHz V GS = V C OSS C RSS 6 V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure. Capacitance Characteristics.. R DS(ON) LIMIT V GS =.5V SINGLE PULSE R θja = 7 o C/W T A = 5 o C ms ms s s DC ms POWER (W) 6 SINGLE PULSE R θja=7 o C/W TA=5 o C.. V DS, DRAIN-SOURCE VOLTAGE (V).... SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. Figure. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = Single Pulse t, TIME (sec) P(pk) R θja (t) = r(t) * R θja R θja = 7 C/W t t T J - T A = P * R θja (t) Duty Cycle, D = t /t Figure. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note b. Transient themal response will change depending on the circuit board design.

5 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Bottomless CoolFET CROSSVOLT DOME E CMOS TM EnSigna TM FACT FACT Quiet Series FAST DISCLAIMER LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms FASTr GlobalOptoisolator GTO HiSeC ISOPLANAR MICROWIRE OPTOLOGIC OPTOPLANAR POP PowerTrench QFET QS QT Optoelectronics Quiet Series SuperSOT -3 SuperSOT -6 SuperSOT - SyncFET TinyLogic UHC VCX FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Formative or In Design First Production Full Production This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. F

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