AUIRLR2905 AUIRLU2905

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1 Features dvanced Planar Technology Logic Level Gate Drive Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Fully valanche Rated Repetitive valanche llowed up to Tjmax Lead-Free, RoHS Compliant utomotive Qualified * UTOMOTIVE GRDE V DSS UIRLR2905 UIRLU V R DS(on) max. 27m I D D HEXFET Power MOSFET D 42 Description Specifically designed for utomotive applications, this cellular design of HEXFET Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in utomotive and a wide variety of other applications. D-Pak UIRLR2905 G D S Gate Drain Source bsolute Maximum Ratings Stresses beyond those listed under bsolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. mbient temperature (T) is 25 C, unless Symbol Parameter Max. Units I T C = 25 C Continuous Drain Current, V V 42 I T C = 0 C Continuous Drain Current, V V 30 I DM Pulsed Drain Current 160 P C = 25 C Maximum Power Dissipation 1 W Linear Derating Factor 0.71 W/ C V GS Gate-to-Source Voltage ± 16 V E S Single Pulse valanche Energy (Thermally Limited) 2 E S (tested) Single Pulse valanche Energy (tested Value) 200 mj I R valanche Current 25 E R Repetitive valanche Energy 11 mj dv/dt Peak Diode Recovery 5.0 V/ns T J Operating Junction and -55 to T STG Storage Temperature Range C Soldering Temperature, for seconds (1.6mm from case) 300 G S S D G I-Pak UIRLU2905 Standard Pack Base part number Package Type Orderable Part Number Form Quantity UIRLU2905 I-Pak Tube 75 UIRLU2905 Tube 75 UIRLR2905 UIRLR2905 D-Pak Tape and Reel Left 3000 UIRLR2905TRL Thermal Resistance Symbol Parameter Typ. Max. Units R JC Junction-to-Case 1.4 R J Junction-to-mbient ( PCB Mount) 50 C/W R J Junction-to-mbient 1 HEXFET is a registered trademark of Infineon. *Qualification standards can be found at

2 T J = 25 C (unless otherwise specified) UIRLR/U2905 Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 55 V V GS = 0V, I D = 250µ V (BR)DSS / T J Breakdown Voltage Temp. Coefficient V/ C Reference to 25 C, I D = 1m V GS = V, I D = 25 R DS(on) Static Drain-to-Source On-Resistance V GS = 5.0V, I D = V GS = 4.0V, I D = 21 V GS(th) Gate Threshold Voltage V V DS = V GS, I D = 250µ gfs Forward Trans conductance 21 S V DS = 25V, I D = 25 I DSS Drain-to-Source Leakage Current 25 V µ DS = 55V, V GS = 0V 250 V DS = 44V,V GS = 0V,T J =150 C Gate-to-Source Forward Leakage 0 V I GSS n GS = 16V Gate-to-Source Reverse Leakage -0 V GS = - 16V Dynamic Electrical T J = 25 C (unless otherwise specified) Q g Total Gate Charge 48 I D = 25 Q gs Gate-to-Source Charge 8.6 nc V DS = 44V Q gd Gate-to-Drain Charge 25 V GS = 5.0V t d(on) Turn-On Delay Time 11 V DD = 28V t r Rise Time 84 I D = 25 ns t d(off) Turn-Off Delay Time 26 R G = 3.4 V GS = 5.0V t f Fall Time 15 R D = 1.1 Between lead, L D Internal Drain Inductance 4.5 6mm (0.25in.) nh from package L S Internal Source Inductance 7.5 and center of die contact C iss Input Capacitance 1700 V GS = 0V C oss Output Capacitance 400 pf V DS = 25V C rss Reverse Transfer Capacitance 150 ƒ = 1.0MHz, See Fig. 5 Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I S 42 (Body Diode) showing the Pulsed Source Current integral reverse I SM 160 (Body Diode) p-n junction diode. V SD Diode Forward Voltage 1.3 V T J = 25 C,I S = 25, V GS = 0V t rr Reverse Recovery Time ns T J = 25 C,I F = 25 Q rr Reverse Recovery Charge nc di/dt = 0/µs t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D ) Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) V DD = 25V,Starting T J = 25 C, L = 470µH, R G = 25, I S = 25 (See fig. 12) I SD 25, di/dt 270/µs, V DD V (BR)DSS, T J 175 C. Pulse width 300µs; duty cycle 2%. When mounted on 1" square PCB (FR-4 or G- Material ). For recommended footprint and soldering techniques refer to application note #N-994. R is measured at T j approximately 90 C

3 UIRLR/U2905 I D, Drain-to-Source Current () 00 0 VGS TOP 15V 12V V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V 2.5V I D, Drain-to-Source Current () 00 0 VGS TOP 15V 12V V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V 2.5V 20µs PULSE WIDTH 1 T J = 25 C V DS, Drain-to-Source Voltage (V) 20µs PULSE WIDTH 1 T J = 175 C V DS, Drain-to-Source Voltage (V) Fig. 1 Typical Output Characteristics Fig. 2 Typical Output Characteristics I D, Drain-to-Source Current () 00 0 T = 25 C J T = 175 C J V DS= 25V 20µs PULSE WIDTH V GS, Gate-to-Source Voltage (V) Fig. 3 Typical Transfer Characteristics R DS(on), Drain-to-Source On Resistance (Normalized) I D = 41 V GS = V T J, Junction Temperature ( C) Fig. 4 Normalized On-Resistance Vs. Temperature

4 UIRLR/U2905 C, Capacitance (pf) C iss C oss C rss V GS = 0V, f = 1MHz C iss = C gs + C gd, C ds SHORTED C rss = Cgd C oss = C ds + Cgd V DS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage V GS, Gate-to-Source Voltage (V) I D = 25 V DS = 44V V DS = 28V FOR TEST CIRCUIT 0 SEE FIGURE Q, Total Gate Charge (nc) G Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage I SD, Reverse Drain Current () 00 0 T = 175 C J T = 25 C J I D, Drain Current () 00 0 OPERTION IN THIS RE LIMITED BY RDS(on) µs 0µs 1ms V GS = 0V V SD, Source-to-Drain Voltage (V) Fig. 7 Typical Source-to-Drain Diode Forward Voltage T C = 25 C ms T J = 175 C Single Pulse V DS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating rea

5 UIRLR/U LIMITED BY PCKGE I D, Drain Current () Fig a. Switching Time Test Circuit T C, Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig b. Switching Time Waveforms Thermal Response (Z thjc ) D = SINGLE PULSE (THERML RESPONSE) Notes: 1. Duty factor D = t 1/ t 2 2. Peak T J= P DM x Z thjc + TC t 1, Rectangular Pulse Duration (sec) PDM t1 t2 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

6 UIRLR/U V V L DS R G D.U.T I S 20V tp 0.01 DRIVER + - V DD Fig 12a. Unclamped Inductive Test Circuit E S, Single Pulse valanche Energy (mj) TOP BOTTOM ID V DD = 25V Starting T J, Junction Temperature ( C) tp V (BR)DSS Fig 12c. Maximum valanche Energy vs. Drain Current I S Fig 12b. Unclamped Inductive Waveforms Vds Id Vgs Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 13a. Gate Charge Waveform Fig 13b. Gate Charge Test Circuit

7 UIRLR/U2905 Fig 14. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs

8 UIRLR/U2905 D-Pak (TO-252) Package Outline (Dimensions are shown in millimeters (inches)) D-Pak (TO-252) Part Marking Information Part Number IR Logo ULR2905 YWW XX XX Date Code Y= Year WW= Work Week Lot Code Note: For the most current drawing please refer to IR website at

9 UIRLR/U2905 I-Pak (TO-251) Package Outline (Dimensions are shown in millimeters (inches) I-Pak (TO-251) Part Marking Information Part Number IR Logo ULU2905 YWW XX XX Date Code Y= Year WW= Work Week Lot Code Note: For the most current drawing please refer to IR website at

10 UIRLR/U2905 D-Pak (TO-252) Tape & Reel Information (Dimensions are shown in millimeters (inches)) TR TRR TRL 16.3 (.641 ) 15.7 (.619 ) 16.3 (.641 ) 15.7 (.619 ) 12.1 (.476 ) 11.9 (.469 ) FEED DIRECTION 8.1 (.318 ) 7.9 (.312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. LL DIMENSIONS RE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EI-481 & EI INCH NOTES : 1. OUTLINE CONFORMS TO EI mm Note: For the most current drawing please refer to IR website at

11 UIRLR/U2905 Qualification Information Qualification Level Moisture Sensitivity Level Machine Model ESD Human Body Model Charged Device Model RoHS Compliant utomotive (per EC-Q1) Comments: This part number(s) passed utomotive qualification. Infineon s Industrial and Consumer qualification level is granted by extension of the higher utomotive level. D-Pak MSL1 I-Pak Class M4 (+/- 425V) EC-Q1-002 Class H1B (+/- 00V) EC-Q1-001 Class C5 (+/- 1125V) EC-Q1-005 Yes Highest passing voltage. Revision History Date Comments Updated datasheet with corporate template 12/11/2015 Corrected ordering table on page 1. dded package outline and part marking on page 9 Published by Infineon Technologies G München, Germany Infineon Technologies G 2015 ll Rights Reserved. IMPORTNT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer s products and any use of the product of Infineon Technologies in customer s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). WRNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury

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