Final data. Maximum Ratings Parameter Symbol Value Unit

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1 SPPN8C3 SPN8C3 Cool MOS Power Transistor V DS 8 V Feature R DS(on).45 Ω New revolutionary high voltage technology Ultra low gate charge I D Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance P-TO--3-3: Fully isolated package (5 VC; minute) P-TO-3-3 P-TO-3-3 P-TO-3-3 Type Package Ordering Code SPPN8C3 P-TO-3- Q674-S4438 SPN8C3 P-TO-3-3 Q674-S4439 Marking N8C3 N8C3 Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 5 C T C = C I D SPP SP 7. ) 7. ) Pulsed drain current, t p limited by T jmax I D puls valanche energy, single pulse E S mj I D =., V DD =5V valanche energy, repetitive t R limited by T ) jmax E R.. I D =, V DD =5V valanche current, repetitive t R limited by T jmax I R Reverse diode dv/dt dv/dt 6 6 V/ns I S =, V DS < V DD, di/dt=/µs, T jmax =5 C Gate source voltage V GS ± ± V Gate source voltage C (f >Hz) V GS ±3 ±3 Power dissipation, T C = 5 C P tot 56 4 W Operating and storage temperature T j, T stg C Page --5

2 SPPN8C3 SPN8C3 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case R thjc K/W Thremal resistance, junction - case, FullPK R thjc_fp Thermal resistance, junction - ambient, leaded R thj Thermal resistance, junction - ambient, FullPK R thj_fp Linear derating factor - - W/K Linear derating factor, FullPK Soldering temperature,.6 mm (.63 in.) from case for s T sold C Electrical Characteristics, at T j = 5 C, unless otherwise specified Static Characteristics Drain-source breakdown voltage V (BR)DSS V V GS =V, I D =.5m Drain-source avalanche breakdown voltage V (BR)DS V GS =V, I D = Gate threshold voltage, V GS = V DS V GS(th) I D =68µ Zero gate voltage drain current V DS = 8 V, V GS = V, T j = 5 C V DS = 8 V, V GS = V, T j = 5 C I DSS µ Gate-source leakage current I GSS - - n V GS =V, V DS =V Drain-source on-state resistance R DS(on) Ω V GS =V, I D =7., T j =5 C Gate input resistance R G f = MHz, open drain Page --5

3 SPPN8C3 SPN8C3 Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. Characteristics Transconductance g fs V DS *I D *R DS(on)max, S I D =7. Input capacitance C iss V GS =V, V DS =5V, pf Output capacitance C oss f=mhz Reverse transfer capacitance C rss Effective output capacitance, 3) energy related Effective output capacitance, 4) time related C o(er) V GS =V, V DS =V to 48V C o(tr) Turn-on delay time t d(on) V DD =4V, V GS =/V, ns Rise time t r I D =, Turn-off delay time t d(off) R G =7.5Ω Fall time t f - 7 Gate Charge Characteristics Gate to source charge Q gs V DD =64V, I D = nc Gate to drain charge Q gd Gate charge total Q g V DD =64V, I D =, V GS = to V Gate plateau voltage V (plateau) V DD =64V, I D = V Limited only by maximum temperature Repetitve avalanche causes additional power losses that can be calculated as PV =E R *f. 3 Co(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from to 8% V DSS. 4 Co(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from to 8% V DSS. Page 3 --5

4 SPPN8C3 SPN8C3 Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. Characteristics Inverse diode continuous I S T C =5 C - - forward current Inverse diode direct current, I SM pulsed Inverse diode forward voltage V SD V GS =V, I F =I S -. V Reverse recovery time t rr V R =64V, I F =I S, ns Reverse recovery charge Q rr di F /dt=/µs - - µc Peak reverse recovery current I rrm Peak rate of fall of reverse di rr /dt T j =5 C - - /µs recovery current Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit SPP SP SPP SP R th.3.3 K/W C th Ws/K R th.7.7 C th.. R th3.4.4 C th R th C th R th C th5.4.4 R th C th6..4 P tot (t) T j R th R th,n T case External Heatsink C th C th C th,n T amb Page 4 --5

5 SPPN8C3 SPN8C3 Power dissipation P tot = f (T C ) Power dissiaption FullPK P tot = f (T C ) 7 SPPN8C3 W W Ptot Ptot C 6 T C C 6 T C 3 Safe operating area I D = f ( V DS ) parameter : D =, T C =5 C 4 Safe operating area FullPK I D = f (V DS ) parameter: D =, T C = 5 C ID ID - tp =. ms tp =. ms tp =. ms tp = ms DC - tp =. ms tp =. ms tp =. ms tp = ms tp = ms DC - V 3 V DS Page 5 - V 3 V DS --5

6 SPPN8C3 SPN8C3 5 Transient thermal impedance Z thjc = f (t p ) parameter: D = t p /T K/W 6 Transient thermal impedance FullPK Z thjc = f (t p ) parameter: D = t p /t K/W ZthJC - ZthJC - -3 D =.5 D =. D =. D =.5 D =. D =. single pulse D =.5 D =. D =. D =.5 D =. D =. single pulse s - t p 7 Typ. output characteristic I D = f (V DS ); T j =5 C parameter: t p = µs, V GS s t p 8 Typ. output characteristic I D = f (V DS ); T j =5 C parameter: t p = µs, V GS 8 V 8V 7V 4 V 6.5V 6V ID 5 ID 6.5V 5.5V 5 6V 5.5V V 4.5V 5 4V V 6 V DS 5V Page V 6 V DS 4V --5

7 SPPN8C3 SPN8C3 9 Typ. drain-source on resistance R DS(on) =f(i D ) parameter: T j =5 C, V GS 3 Ω Drain-source on-state resistance R DS(on) = f (T j ) parameter : I D = 7., V GS = V.6 SPPN8C3 Ω R DS(on) V 4.5V 5V 5.5V RDS(on) V 6.5V V % typ I D Typ. transfer characteristics I D = f ( V GS ); V DS x I D x R DS(on)max parameter: t p = µs C 8 T j Typ. gate charge V GS = f (Q Gate ) parameter: I D = pulsed 6 SPPN8C3 5 C V ID 5 VGS, V DS max,8 V DS max 5 5 C V V GS Page nc Q Gate --5

8 SPPN8C3 SPN8C3 3 Forward characteristics of body diode I F = f (V SD ) parameter: T j, tp = µs SPPN8C3 4 valanche SO I R = f (t R ) par.: T j 5 C 9 IF IR T j = 5 C typ T j = 5 C typ T j = 5 C (98%) T j = 5 C (98%) 4 3 T j(strt) =5 C T j(strt) =5 C V 3 V SD 5 valanche energy E S = f (T j ) par.: I D =., V DD = 5 V 5 mj µs 4 t R 6 Drain-source breakdown voltage V (BR)DSS = f (T j ) 98 SPPN8C3 V ES V(BR)DSS C 5 T j C 8 T j Page 8 --5

9 SPPN8C3 SPN8C3 7 valanche power losses P R = f (f ) parameter: E R =.mj W 8 Typ. capacitances C = f (V DS ) parameter: V GS =V, f= MHz 4 pf 3 C iss PR C C oss 5 C rss 4 5 Hz 6 f V 8 V DS 9 Typ. C oss stored energy E oss =f(v DS ) µj Eoss V 8 V DS Page 9 --5

10 SPPN8C3 SPN8C3 Definition of diodes switching characteristics Page --5

11 SPPN8C3 SPN8C3 P-TO--3- ± ±. B.7± ±.6 ± ±.48 C 5.3 ± ±.5 3x.75 ±..5 ±..5±..7 ±. x.54.5 M B C ll metal surfaces tin plated, except area of cut. Metal surface min. x=7.5, y=.3 P-TO--3-3 (FullPK).5 ±.5.5 ±. 6. ±..7 ± ± ±.5.79 ±.5 ± ±.5 ± ± ± Please refer to mounting instructions (application note N-TO-3-3-) Page --5

12 SPPN8C3 SPN8C3 Published by Infineon Technologies G, Bereichs Kommunikation St.-Martin-Strasse 53, D-854 München Infineon Technologies G 999 ll Rights Reserved. ttention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page --5

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