Power MOSFET. IRF9520PbF SiHF9520-E3 IRF9520 SiHF9520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS V Gate-Source Voltage V GS ± 20

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1 Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 10 V 0.60 Q g (Max.) (nc) 18 Q gs (nc) 3.0 Q gd (nc) 9.0 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S D PChannel MOSFET FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated PChannel 175 C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and costeffectiveness. The TO220AB package is universally preferred for all commercialindustrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO220AB contribute to its wide acceptance throughout the industry. TO220AB IRF9520PbF SiHF9520E3 IRF9520 SiHF9520 ABSOLUTE MAXIMUM RATINGS (T C = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT DrainSource Voltage 100 V GateSource Voltage ± 20 Continuous Drain Current at 10 V T C = 25 C 6.8 I D T C = 100 C 4.8 A Pulsed Drain Current a I DM 27 Linear Derating Factor 0.40 W/ C Single Pulse Avalanche Energy b E AS 300 mj Repetitive Avalanche Current a I AR 6.8 A Repetitive Avalanche Energy a E AR 6.0 mj Maximum Power Dissipation T C = 25 C P D 60 W Peak Diode Recovery dv/dt c dv/dt 5.5 V/ns Operating Junction and Storage Temperature Range T J, T stg 55 to Soldering Recommendations (Peak Temperature) for 10 s 300 d C Mounting Torque 632 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. V DD = 25 V, starting T J = 25 C, L = 9.7 mh, R g = 25, I AS = 6.8 A (see fig. 12). c. I SD 6.8 A, di/dt 110 A/μs, V DD, T J 175 C. d. 1.6 mm from case. 10 lbf in 1.1 N m * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: S110512Rev. B, 21Mar11 1

2 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum JunctiontoAmbient R thja 62 CasetoSink, Flat, Greased Surface R thcs 0.50 C/W Maximum JunctiontoCase (Drain) R thjc 2.5 SPECIFICATIONS (T J = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static DrainSource Breakdown Voltage = 0 V, I D = 250 μa 100 V Temperature Coefficient /T J Reference to 25 C, I D = 1 ma 0.10 V/ C GateSource Threshold Voltage (th) =, I D = 250 μa V GateSource Leakage I GSS = ± 20 V ± 100 na = 100 V, = 0 V 100 Zero Gate Voltage Drain Current I DSS = 80 V, = 0 V, T J = 150 C 500 μa DrainSource OnState Resistance R DS(on) = 10 V I D = 4.1 A b 0.60 Forward Transconductance g fs = 50 V, I D = 4.1 A b 2.0 S Dynamic Input Capacitance C iss = 0 V, 390 Output Capacitance C oss = 25 V, 170 pf Reverse Transfer Capacitance C rss f = 1.0 MHz, see fig Total Gate Charge Q g 18 GateSource Charge Q gs I = 10 V D = 6.8 A, = 80 V, see fig. 6 and 13 b 3.0 nc GateDrain Charge Q gd 9.0 TurnOn Delay Time t d(on) 9.6 Rise Time t r V DD = 50 V, I D = 6.8 A, 29 TurnOff Delay Time t d(off) R g = 18, R D = 7.1, see fig. 10 b 21 ns Fall Time t f 25 Between lead, Internal Drain Inductance L D 6 mm (0.25") from 4.5 D package and center of nh G Internal Source Inductance L S die contact 7.5 S DrainSource Body Diode Characteristics MOSFET symbol Continuous SourceDrain Diode Current I S showing the 6.8 D integral reverse G Pulsed Diode Forward Current a I SM p n junction diode 27 S A Body Diode Voltage V SD T J = 25 C, I S = 6.8 A, = 0 V b 6.3 V Body Diode Reverse Recovery Time t rr T J = 25 C, I F = 6.8 A, di/dt = 100 A/μs b ns Body Diode Reverse Recovery Charge Q rr μc Forward TurnOn Time t on Intrinsic turnon time is negligible (turnon is dominated by L S and L D ) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. Document Number: S110512Rev. B, 21Mar11

3 TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 25 C I D, Drain Current (A) 91074_ Top 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V V 20 µs Pulse Width T C = 25 C, DraintoSource Voltage (V) I D, Drain Current (A) 91074_ C 20 µs Pulse Width = 50 V , GatetoSource Voltage (V) Fig. 1 Typical Output Characteristics, T C = 25 C Fig. 3 Typical Transfer Characteristics I D, Drain Current (A) 91074_ Top 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V µs Pulse Width T C = 175 C, DraintoSource Voltage (V) 4.5 V R DS(on), DraintoSource On Resistance (Normalized) 91074_ I D = 6.8 A = 10 V T J, Junction Temperature ( C) Fig. 2 Typical Output Characteristics, T C = 175 C Fig. 4 Normalized OnResistance vs. Temperature Document Number: S110512Rev. B, 21Mar11 3

4 Capacitance (pf) 91074_ = 0 V, f = 1 MHz C iss = C gs + C gd, C ds Shorted C rss = C gd C oss = C ds + C gd C iss C oss C rss, DraintoSource Voltage (V) I SD, Reverse Drain Current (A) 91074_ C C 10 1 = 0 V V SD, SourcetoDrain Voltage (V) Fig. 5 Typical Capacitance vs. DraintoSource Voltage Fig. 7 Typical SourceDrain Diode Forward Voltage, GatetoSource Voltage (V) I D = 6.8 A = 20 V = 50 V = 80 V For test circuit see figure I D, Drain Current (A) Operation in this area limited by R DS(on) T C = 25 C T J = 175 C Single Pulse µs 1 ms 10 ms _06 Q G, Total Gate Charge (nc) 91074_08, DraintoSource Voltage (V) Fig. 6 Typical Gate Charge vs. GatetoSource Voltage Fig. 8 Maximum Safe Operating Area Document Number: S110512Rev. B, 21Mar11

5 R D 7.0 D.U.T. 6.0 R G V + DD I D, Drain Current (A) V Pulse width 1 µs Duty factor 0.1 % Fig. 10a Switching Time Test Circuit t d(on) t r t d(off) t f % 91074_09 T C, Case Temperature ( C) Fig. 9 Maximum Drain Current vs. Case Temperature 90 % Fig. 10b Switching Time Waveforms 10 Thermal Response (Z thjc ) D = Single Pulse (Thermal Response) P DM t 1 t 2 Notes: 1. Duty Factor, D = t 1 /t 2 2. Peak T j = P DM x Z thjc + T C 91074_11 t 1, Rectangular Pulse Duration (s) Fig. 11 Maximum Effective Transient Thermal Impedance, JunctiontoCase Document Number: S110512Rev. B, 21Mar11 5

6 Vary t p to obtain required I AS L I AS R G D.U.T + V DD I AS V DD 10 V t p 0.01 Ω t p Fig. 12a Unclamped Inductive Test Circuit Fig. 12b Unclamped Inductive Waveforms E AS, Single Pulse Energy (mj) 91074_12c Top Bottom V DD = 25 V I D 2.8 A 4.8 A 6.8 A Starting T J, Junction Temperature ( C) 175 Fig. 12c Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 10 V Q G 12 V 0.2 µf 50 kω 0.3 µf Q GS Q GD D.U.T. + V G Charge Fig. 13a Basic Gate Charge Waveform 3 ma Fig. 13b Gate Charge Test Circuit I G I D Current sampling resistors Document Number: S110512Rev. B, 21Mar11

7 + IRF9520, SiHF9520 Peak Diode Recovery dv/dt Test Circuit D.U.T. + Circuit layout considerations Low stray inductance Ground plane Low leakage inductance current transformer + R g dv/dt controlled by R g I SD controlled by duty factor D D.U.T. device under test + V DD Note Compliment NChannel of D.U.T. for driver Driver gate drive P.W. Period D = P.W. Period = 10 V a D.U.T. l SD waveform Reverse recovery current Reapplied voltage Body diode forward current di/dt D.U.T. waveform Diode recovery dv/dt Body diode forward drop Inductor current V DD Ripple 5 % Note a. = 5 V for logic level and 3 V drive devices Fig. 14 For PChannel I SD maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see Document Number: S110512Rev. B, 21Mar11 7

8 Package Information TO220AB D L H(1) Q L(1) 1 E 2 3 M * b(1) Ø P A F MILLIMETERS INCHES DIM. MIN. MAX. MIN. MAX. A b b(1) c D E e e(1) F H(1) J(1) L L(1) Ø P Q ECN: X120208Rev. N, 08Oct12 DWG: 5471 e b C Notes * M = 1.32 mm to 1.62 mm (dimension including protrusion) Heatsink hole for HVM Xi an and Mingxin actual photo e(1) J(1) Revison: 08Oct12 1 Document Number: For technical questions, contact: THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

9 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, noninfringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, lifesaving, or lifesustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHSCompliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) recast, unless otherwise specified as noncompliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as HalogenFree follow HalogenFree requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC definition. We confirm that all the products identified as being compliant to IEC conform to JEDEC JS709A standards. Revision: 02Oct12 1 Document Number: 91000

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