UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET

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1 UNISONIC TECHNOLOGIES CO., LTD 50N06 50 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION TO-263 TO-25 The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching mode power appliances. FEATURES TO-220 TO-220F * R DS(ON) < GS = 0 V * Fast switching capability * 00% avalanche energy specified * Improved dv/dt capability SYMBOL TO-220F3 TO Drain.Gate 3.Source ORDERING INFORMATION Ordering Number Pin Assignment Package Lead Free Halogen Free 2 3 Packing 50N06L-TA3-T 50N06G-TA3-T TO-220 G D S Tube 50N06L-TF3-T 50N06G-TF3-T TO-220F G D S Tube 50N06L-TF3T-T 50N06G-TF3T-T TO-220F3 G D S Tube 50N60L-TM3-T 50N60G-TM3-T TO-25 G D S Tube 50N06L-TN3-R 50N06G-TN3-R TO-252 G D S Tape Reel 50N06L-TND-R 50N06G-TND-R G D S Tape Reel 50N06L-TQ2-T 50N06G-TQ2-T TO-263 G D S Tube 50N06L-TQ2-R 50N06G-TQ2-R TO-263 G D S Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source of 9 Copyright 204 Unisonic Technologies Co., Ltd

2 MARKING INFORMATION PACKAGE TO-220 TO-220F TO-220F3 TO-25 TO-252 TO-263 MARKING UNISONIC TECHNOLOGIES CO., LTD 2 of 9

3 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 60 V Gate-Source Voltage V GSS ±20 V Continuous Drain Current T C = 25 C 50 A I D T C = 00 C 35 A Pulsed Drain Current (Note 2) I DM 200 A Avalanche Energy Single Pulsed (Note 3) E AS 480 mj Repetitive (Note 2) E AR 3 mj Peak Diode Recovery dv/dt (Note 4) dv/dt 7 V/ns TO-220/TO W TO-220F/TO-220F3 70 W Power Dissipation (T C =25 C) P D TO-25/TO W Junction Temperature T J +50 C Operation and Storage Temperature T STG -55 ~ +50 C Notes:. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by T J 3. L=0.38mH, I AS =50A, V DD = 25V, R G =20Ω, Starting T J =25 C 4. I SD 50A, di/dt 300A/μs, V DD BV DSS, Starting T J =25 C THERMAL DATA Junction to Ambient Junction to Case PARAMETER SYMBOL RATING UNIT TO-220/TO-220F 62 C/W TO-220F3/TO-263 θ JA TO-25/TO C/W TO C/W TO-220F/TO-220F3.78 C/W TO-25/TO-252 θ JC 2.7 C/W TO C/W UNISONIC TECHNOLOGIES CO., LTD 3 of 9

4 ELECTRICAL CHARACTERISTICS (T C = 25 C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS = 0 V, I D = 250 μa 60 V Drain-Source Leakage Current I DSS V DS = 60 V, V GS = 0 V 0 μa Gate-Source Leakage Current Forward V GS = 20V, V DS = 0 V 00 na I GSS Reverse V GS = -20V, V DS = 0 V -00 na Breakdown Voltage Temperature Coefficient BV DSS / T J I D = 250 μa, Referenced to 25 C 0.07 V/ C ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS = V GS, I D = 250 μa V Static Drain-Source On-State Resistance R DS(ON) V GS = 0 V, I D = 25 A 8 23 mω DYNAMIC CHARACTERISTICS Input Capacitance C ISS pf V GS = 0 V, V DS = 25 V Output Capacitance C OSS pf f = MHz Reverse Transfer Capacitance C RSS pf SWITCHING CHARACTERISTICS Turn-On Delay Time t D(ON) ns Turn-On Rise Time t R V DD = 30V, I D =0.5 A, ns Turn-Off Delay Time t D(OFF) R G = 25Ω (Note, 2) ns Turn-Off Fall Time t F ns Total Gate Charge Q G nc V DS = 50V, V GS = 0 V Gate-Source Charge Q GS 9 nc I D =.3A (Note, 2) Gate-Drain Charge Q GD 20 nc DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage V SD I S = 50A, V GS = 0 V.5 V Maximum Continuous Drain-Source Diode Forward Current I S 50 A Maximum Pulsed Drain-Source Diode Forward Current I SM 200 A Reverse Recovery Time t RR I S = 50A, V GS = 0 V 54 ns Reverse Recovery Charge Q RR di F / dt = 00 A/μs 8 μc Notes:. Pulse Test: Pulse width 300µs, Duty cycle 2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD 4 of 9

5 TEST CIRCUITS AND WAVEFORMS D.U.T. + V DS L R G Driver V DD V GS Same Type as D.U.T. * dv/dt controlled by R G * I SD controlled by pulse period * D.U.T.-Device Under Test Fig. A Peak Diode Recovery dv/dt Test Circuit V GS (Driver) P.W. Period D= P. W. Period V GS = 0V I FM, Body Diode Forward Current I SD (D.U.T.) di/dt I RM Body Diode Reverse Current Body Diode Recovery dv/dt V DS (D.U.T.) V DD Body Diode Forward Voltage Drop Fig. B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD 5 of 9

6 TEST CIRCUITS AND WAVEFORMS (Cont.) Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform L V DS BV DSS I AS R G V DD 0V D.U.T. V DD I D(t) V DS(t) t p t p Time Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD 6 of 9

7 TYPICAL CHARACTERISTICS Drain Current, ID (A) Drain Current, ID (A) On-Resistance Variation vs. Drain Current and Gate Voltage On State Current vs. Allowable Case Temperature Drain to Source On- Resistance,RDS(ON) (mω) V GS =0V 20 0 V GS =20V Reverse Drain Current, ISD (A) C 25 C *Note:. V GS =0V µs Test Drain Current, I D (A) Source-Drain Voltage, V SD (V) UNISONIC TECHNOLOGIES CO., LTD 7 of 9

8 TYPICAL CHARACTERISTICS(Cont.) Drain-Source Breakdown Voltage, BVDSS(Normalized) Breakdown Voltage Variation vs. Junction Temperature *Note:. V GS =0V 2. I D =250µA Junction Temperature, T J ( C) Drain-Source On-Resistance, RDS(ON), (Normalized) On-Resistance Variation vs. Junction Temperature *Note:. V GS =0V 2. I D =25A Junction Temperature, T J ( C) Drain Current, ID,(A) Maximum Safe Operating Operation in This Area by R DS (on) 00µs ms 0ms 0ms *Note:. T c =25 C 2. T J =50 C 3. Single Pulse Drain-Source Voltage, V DS (V) Drain Current, ID (A) Maximum Drain Current vs. Case Temperature Case Temperature, T C ( C) Thermal Response, ZθJC (t) UNISONIC TECHNOLOGIES CO., LTD 8 of 9

9 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD 9 of 9

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