Symbol Parameter Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive

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1 BUZ11 N - CHANNEL 50V Ω - 30A -TO-220 STripFET POWER MOSFET TYPE V DSS R DS(on) I D BUZ11 50 V < 0.04 Ω 30 A TYPICAL R DS(on) = 0.03 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175 o C OPERATING TEMPERATURE APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS REGULATORS DC-DC & DC-AC CONVERTERS MOTOR CONTROL, AUDIO AMPLIFIERS AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V DS Drain-source Voltage (V GS =0) 50 V VDGR Drain- gate Voltage (RGS =20kΩ) 50 V VGS Gate-source Voltage ± 20 V ID Drain Current (continuous) at Tc =25 o C 30 A I DM Drain Current (pulsed) 120 A P tot Total Dissipation at T c =25 o C 75 W Tstg Storage Temperature -65 to 175 T j Max. Operating Junction Temperature 175 DIN HUMIDITY CATEGORY (DIN 40040) E IEC CLIMATIC CATEGORY (DIN IEC 68-1) 55/150/56 First digit of the datecode being Z or K identifies silicon characterized in this datasheet. o C o C August /6

2 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 1.67 Rt hj- amb Thermal Resistance Junction-ambient Max 62.5 o C/W o C/W AVALANCHE CHARACTERISTICS Symbol Parameter Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive 30 A (pulse width limited by T j max, δ <1%) EAS Single Pulse Avalanche Energy (starting T j =25 o C, I D =I AR,V DD =25V) 200 mj ELECTRICAL CHARACTERISTICS (T case =25 o C unless otherwise specified) OFF Symbol Parameter Test Conditio Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID =250µA VGS =0 50 V IDSS I GSS Zero Gate Voltage Drain Current (VGS =0) Gate-body Leakage Current (VDS =0) VDS =MaxRating VDS =MaxRating Tj=125 o C VGS = ± 20 V ± 100 na 1 10 µa µa ON ( ) Symbol Parameter Test Conditio Min. Typ. Max. Unit V GS(th) Gate Threshold V DS =V GS I D = 1 ma V Voltage R DS(on) Static Drain-source On Resistance V GS =10V I D = 19 A Ω DYNAMIC Symbol Parameter Test Conditio Min. Typ. Max. Unit gfs ( ) C iss Coss Crss Forward Traconductance Input Capacitance Output Capacitance Reverse Trafer Capacitance VDS =15V ID=19A S V DS =25V f=1mhz V GS = pf pf pf SWITCHING Symbol Parameter Test Conditio Min. Typ. Max. Unit td(on) t r td(off) t f Turn-on Time Rise Time Turn-off Delay Time Fall Time VDD =30V ID=18A RGS =50 Ω VGS =10V /6

3 ELECTRICAL CHARACTERISTICS (continued) SOURCE DRAIN DIODE Symbol Parameter Test Conditio Min. Typ. Max. Unit ISD I SDM Source-drain Current Source-drain Current (pulsed) VSD ( ) Forward On Voltage ISD =60A VGS =0 1.8 V trr Reverse Recovery I SD =36A di/dt=100a/µs 75 Qrr Time Reverse Recovery V DD =30V T j =150 o C 0.24 µc Charge ( ) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % A A 3/6

4 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 4/6

5 TO-220 MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A C D D E F F F G G H L L L L L L DIA D1 F G C D A E L2 G1 H2 F1 Dia. L5 L7 L9 F2 L6 L4 P011C 5/6

6 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no respoibility for the coequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No licee is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 1998 STMicroelectronics Printed in Italy All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.. 6/6

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