Symbol Parameter Value Unit V DS Drain-source Voltage (V GS =0) 50 V V DGR Drain- gate Voltage (R GS =20kΩ) 50 V

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1 BUZ71A N - CHANNEL 50V - 0.1Ω - 13A TO-220 STripFET POWER MOSFET TYPE V DSS R DS(on) I D BUZ71A 50 V < 0.12 Ω 13 A TYPICAL RDS(on) = 0.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175 o C OPERATING TEMPERATURE APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS REGULATORS DC-DC & DC-AC CONVERTERS MOTOR CONTROL, AUDIO AMPLIFIERS AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V DS Drain-source Voltage (V GS =0) 50 V V DGR Drain- gate Voltage (R GS =20kΩ) 50 V V GS Gate-source Voltage ± 20 V I D Drain Current (continuous) at T c =25 o C 13 A IDM Drain Current (pulsed) 52 A P tot Total Dissipation at T c =25 o C 40 W T stg Storage Temperature -65 to 175 T j Max. Operating Junction Temperature 175 DIN HUMIDITY CATEGORY (DIN 40040) E IEC CLIMATIC CATEGORY (DIN IEC 68-1) 55/150/56 First digit of the datecode being Z or K identifies silicon characterized in this datasheet. o C o C July /8

2 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 3.75 Rthj-amb Thermal Resistance Junction-ambient Max 62.5 o C/W o C/W AVALANCHE CHARACTERISTICS Symbol Parameter Value Unit I AR E AS Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max) Single Pulse Avalanche Energy (starting T j =25 o C, I D =I AR,V DD =25V) 14 A 50 mj ELECTRICAL CHARACTERISTICS (Tcase =25 o C unless otherwise specified) OFF V (BR)DSS I DSS I GSS Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (V GS =0) Gate-body Leakage Current (V DS =0) I D =250µA V GS =0 50 V V DS =MaxRating V DS =MaxRating T j =125 o C V GS = ± 20 V ± 100 na 1 10 µa µa ON ( ) V GS(th) Gate Threshold Voltage V DS =V GS I D =1mA V R DS(on) Static Drain-source On Resistance V GS =10V I D =9A Ω DYNAMIC g fs ( ) C iss C oss Crss Forward Traconductance Input Capacitance Output Capacitance Reverse Trafer Capacitance V DS =25V I D =9A S V DS =25V f=1mhz V GS = pf pf pf SWITCHING t d(on) t r t d(off) t f Turn-on Time Rise Time Turn-off Delay Time Fall Time V DD =30V I D =8A R GS =50 Ω V GS =10V /8

3 ELECTRICAL CHARACTERISTICS (continued) SOURCE DRAIN DIODE ISD I SDM Source-drain Current Source-drain Current (pulsed) V SD ( ) Forward On Voltage I SD =28A V GS =0 1.8 V trr Reverse Recovery ISD = 14 A di/dt = 100 A/µs 65 Qrr Time Reverse Recovery Charge V DD =30V T j = 150 o C 0.17 µc ( ) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % A A Safe Operating Area Thermal Impedance 3/8

4 Output Characteristics Trafer Characteristics Traconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variatio 4/8

5 Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/8

6 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8

7 TO-220 MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A C D D E F F F G G H L L L L L L DIA D1 F G C D A E L2 G1 H2 F1 Dia. L5 L7 L9 F2 L6 L4 P011C 7/8

8 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no respoibility for the coequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No licee is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 1999 STMicroelectronics Printed in Italy All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. 8/8

Symbol Parameter Value Unit V DS Drain-source Voltage (V GS = 0) 50 V V DGR Drain- gate Voltage (R GS = 20 kω) 50 V

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