N-Channel 60-V (D-S), 175 C MOSFET

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1 N-Channel 6-V (D-S), 75 C MOSFET SUP/SUB7N6-4 V (BR)DSS (V) r DS(on) ( ) (A) a TO-22AB D TO-263 DRAIN connected to TAB G G D S Top View SUP7N6-4 G D S Top View SUB7N6-4 S N-Channel MOSFET Parameter Symbol Limit Unit Gate-Source Voltage V GS 2 V 7 a Continuous Drain Current (T J = 75 C) T C = C 49 Pulsed Drain Current M 6 A Avalanche Current I AR 7 Repetitive Avalanche Energy b L =. mh E AR 8 mj Power Dissipation (TO-22AB and TO-263) 42 c P D W T A = 25 C (TO-263) d 3.7 Operating Junction and Storage Temperature Range T J, T stg 55 to 75 C Parameter Symbol Limit Unit Junction-to-Ambient R thja Free Air (TO-22AB) 62.5 C/W Junction-to-Case R thjc.5 Notes: a. Package limited. b. Duty cycle %. c. See SOA curve for voltage derating. d. When mounted on square PCB (FR-4 material). For SPICE model information via the Worldwide Web: Document Number: 729 FaxBack

2 SUP/SUB7N6-4 Static Parameter Symbol Test Condition Min Typ Max Unit Drain-Source Breakdown Voltage V (BR)DSS V GS = V, = 25 A 6 Gate Threshold Voltage V GS(th) V DS = V GS, S = ma V Gate-Body Leakage I GSS V DS = V, V GS = 2 V na V DS = 6 V, V GS = V Zero Gate Voltage Drain Current SS V DS = 6 V, V GS = V, T J = 25 C 5 AA V DS = 6 V, V GS = V, T J = 75 C 5 On-State Drain Current a (on) V DS = 5 V, V GS = V 7 A V GS = V, = 3 A.4 Drain-Source On-State Resistance a r DS(on) VGS = V, = 3 A, T J = 25 C.23 V GS = V, = 3 A, T J = 75 C.28 Forward Transconductance a g fs V DS = 5 V, = 3 A 25 5 S Dynamic b Input Capacitance C iss 24 Output Capacitance C oss V GS = V, V DS = 25 V, f = MHz 49 pf Reversen Transfer Capacitance C rss 3 Total Gate Charge c Q g 45 7 Gate-Source Charge c Q gs V DS = 3 V, V GS = V, = 6A 2 nc Gate-Drain Charge c Q gd 6 Turn-On Delay Time c t d(on) 3 3 Rise Time c t r VDD = 3 V, R L =.47 3 Turn-Off Delay Time c t d(off) 6 A, V GEN = V, R G = Fall Time c t f 25 ns Source-Drain Diode Ratings and Characteristics () b Continuous Current I s 7 Pulsed Current I SM 6 Forward Voltage a V SD I F = 7 A, V GS = V.4 V Reverse Recovery Time t rr 47 ns Peak Reverse Recovery Current I RM(REC) I F = 6 A, di/dt = A/ s 3.5 A Reverse Recovery Charge Q rr.8 C Notes: a. Pulse test; pulse width 3 s, duty cycle 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. A FaxBack Document Number: 729

3 SUP/SUB7N6-4 5 Output Characteristics Transfer Characteristics V GS =, 9, 8 V 25 7 V 8 6 V V 25 4 V T C = 25 C 2 25 C 55 C V GS Gate-to-Source Voltage (V) Transconductance (S) g fs C Capacitance (pf) Transconductance 8 T C = 55 C C 5 25 C V GS Gate-to-Source Voltage (V) Capacitance 35 3 C iss C oss C rss 5 Gate-to-Source Voltage (V) rds(on) On-Resistance ( Ω ) V GS On-Resistance vs. Drain Current V DS = 3 V = 6 A V GS = V Gate Charge V GS = 2 V Q g Total Gate Charge (nc) Document Number: 729 FaxBack

4 SUP/SUB7N6-4 rds(on) On-Resistance ( Ω ) (Normalized) On-Resistance vs. Junction Temperature V GS = V = 3 A Source Current (A) I S Source-Drain Diode Forward Voltage T C = 5 C T J Junction Temperature ( C) V SD Source-to-Drain Voltage (V) Maximum Avalanche and Drain Current vs. Case Temperature 5 Safe Operating Area Limited by r DS(on) Single Pulse s ms ms ms, s, dc T C Case Temperature ( C).. 2 Normalized Thermal Transient Impedance, Junction-to-Case Duty Cycle =.5 Normalized Effective Transient Thermal Impedance Single Pulse Square Wave Pulse Duration (sec) FaxBack Document Number: 729

5 Notice Legal Disclaimer Notice Vishay Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 9 Revision: 8-Apr-5

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