BUZ11. 30A, 50V, Ohm, N-Channel Power MOSFET. Features. [ /Title (BUZ1 1) /Subject. (30A, 50V, Ohm, N- Channel. Ordering Information

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1 Data Sheet June 1999 File Number [ /Title (BUZ1 1) /Subject (3A, 5V,.4 Ohm, N- Channel Power MOS- FET) /Autho r () /Keywords (Intersil Corporation, N- Channel Power MOS- FET, TO- 22AB ) /Creator () /DOCI NFO pdfmark 3A, 5V,.4 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits. Formerly developmental type TA9771. Ordering Information PART NUMBER PACKAGE BRAND BUZ11 TO-22AB BUZ11 NOTE: When ordering, use the entire part number. Packaging DRAIN (FLANGE) JEDEC TO-22AB Features 3A, 5V r DS(ON) =.4Ω SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Majority Carrier Device Related Literature - TB334 Guidelines for Soldering Surface Mount Components to PC Boards Symbol SOURCE DRAIN GATE G D S 21 Fairchild Semiconductor Corporation BUZ1 Rev. A

2 Absolute Maximum Ratings T C = 25 o C, Unless Otherwise Specified BUZ11 Drain to Source Breakdown Voltage (Note 1) V Drain to Gate Voltage (R GS = 2kΩ) (Note 1) V DGR 5 V Continuous Drain Current T C = 3 o C I D 3 A Pulsed Drain Current (Note 3) I DM 12 A Gate to Source Voltage V GS ±2 V Maximum Power Dissipation P D 75 W Linear Derating Factor W/ o C Operating and Storage Temperature T J, T STG -55 to 15 o C DIN Humidity Category - DIN E IEC Climatic Category - DIN IEC /15/56 Maximum Temperature for Soldering Leads at.63in (1.6mm) from Case for 1s T L 3 Package Body for 1s, See Techbrief T pkg 26 CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. T J = 25 o C to 125 o C. BUZ11 UNITS o C o C Electrical Specifications T C = 25 o C, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BS I D = 25µA, V GS = V V Gate Threshold Voltage V GS(TH) V GS =, I D = 1mA (Figure 9) V Zero Gate Voltage Drain Current I DSS T J = 25 o C, = 5V, V GS = V µa T J = 125 o C, = 5V, V GS = V µa Gate to Source Leakage Current I GSS V GS = 2V, = V na Drain to Source On Resistance (Note 2) r DS(ON) I D = 15A, V GS = 1V (Figure 8) Ω Forward Transconductance (Note 2) g fs = 25V, I D = 15A (Figure 11) S Turn-On Delay Time t d(on) V CC = 3V, I D 3A, V GS = 1V, R GS = 5Ω, ns Rise Time t r R L = 1Ω ns Turn-Off Delay Time t d(off) ns Fall Time t f ns Input Capacitance C ISS = 25V, V GS = V, f = 1MHz (Figure 1) pf Output Capacitance C OSS pf Reverse Transfer Capacitance C RSS pf Thermal Resistance Junction to Case R θjc 1.67 o C/W Thermal Resistance Junction to Ambient R θja 75 o C/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Continuous Source to Drain Current I SD T C = 25 o C A Pulsed Source to Drain Current I SDM T C = 25 o C A Source to Drain Diode Voltage V SD T J = 25 o C, I SD = 6A, V GS = V V Reverse Recovery Time t rr T J = 25 o C, I SD = 3A, di SD /dt = 1A/µs, ns Reverse Recovery Charge Q RR V R = 3V µc NOTES: 2. Pulse Test: Pulse width 3ms, duty cycle 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). 21 Fairchild Semiconductor Corporation BUZ1 Rev. A

3 Typical Performance Curves Unless Otherwise Specified V GS > 1V POWER DISSIPATION MULTIPLIER T A, CASE TEMPERATURE ( o C) T C, CASE TEMPERATURE ( o C) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE Z θjc, TRANSIENT THERMAL IMPEDANCE P DM t 1 SINGLE PULSE NOTES: t 2 DUTY FACTOR: D = t 1 /t 2 PEAK T J = P DM x Z θjc + T C t, RECTANGULAR PULSE DURATION (s) FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE OPERATION IN THIS AREA MAY BE LIMITED BY r DS(ON), DRAIN TO SOURCE VOLTAGE (V) 2.5µs 1µs 1µs 1ms T C = 25 o C 1ms T J = MAX RATED 1ms SINGLE PULSE DC P D = 75W V GS = 2V PULSE DURATION = 8µs DUTY CYCLE =.5% MAX 1V V GS = 8.V V GS = 7.5V V GS = 7.V V GS = 6.5V V GS = 6.V V GS = 5.5V V GS = 5.V V GS = 4.5V V GS = 4.V , DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS 21 Fairchild Semiconductor Corporation BUZ1 Rev. A

4 Typical Performance Curves Unless Otherwise Specified (Continued) I DS(ON), DRAIN TO SOURCE CURRENT (A) PULSE DURATION = 8µs DUTY CYCLE =.5% MAX = 25V V GS, GATE TO SOURCE VOLTAGE (V) r DS(ON), ON-STATE RESISTANCE (Ω) PULSE DURATION = 8µs DUTY CYCLE =.5% MAX V GS = 5V 5.5V 6V 6.5V 7V 7.5V 8V 9V 1V 2V FIGURE 6. TRANSFER CHARACTERISTICS FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT r DS(ON), DRAIN TO SOURCE ON RESISTANCE (Ω) PULSE DURATION = 8µs DUTY CYCLE =.5% MAX I D = 15A, V GS = 1V T J, JUNCTION TEMPERATURE ( o C) V GS(TH), GATE THRESHOLD VOLTAGE (V) = V GS I D = 1mA T J, JUNCTION TEMPERATURE ( o C) FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE FIGURE 9. GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE C, CAPACITANCE (nf) C ISS C OSS C RSS 1-1 V GS = V, f = 1MHz C ISS = C GS + C GD C RSS = C GD C OSS C DS + C GD , DRAIN TO SOURCE VOLTAGE (V) FIGURE 1. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE g fs, TRANSCONDUCTANCE (S) PULSE DURATION = 8µs DUTY CYCLE =.5% MAX = 25V T J = 25 o C FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT 21 Fairchild Semiconductor Corporation BUZ1 Rev. A

5 Typical Performance Curves Unless Otherwise Specified (Continued) I SD, SOURCE TO DRAIN CURRENT (A) 1 3 PULSE DURATION = 8µs DUTY CYCLE =.5% MAX T J = 25 o C 1 2 T J = 15 o C V SD, SOURCE TO DRAIN VOLTAGE (V) V GS, GATE TO SOURCE VOLTAGE (V) 15 I D = 45A = 1V 1 = 4V Q g, GATE CHARGE (nc) FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE Test Circuits and Waveforms t ON t d(on) t OFF t d(off) R L t r t f 9% 9% + R G V DD - 1% 1% DUT 9% V GS V GS 1% 5% PULSE WIDTH 5% FIGURE 14. SWITCHING TIME TEST CIRCUIT FIGURE 15. RESISTIVE SWITCHING WAVEFORMS CURRENT REGULATOR (ISOLATED SUPPLY) V DD 12V BATTERY.2µF 5kΩ.3µF SAME TYPE AS DUT Q gs Q gd Q g(tot) V GS D G DUT I g(ref) I G CURRENT SAMPLING RESISTOR S I D CURRENT SAMPLING RESISTOR I g(ref) FIGURE 16. GATE CHARGE TEST CIRCUIT FIGURE 17. GATE CHARGE WAVEFORMS 21 Fairchild Semiconductor Corporation BUZ1 Rev. A

6 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Bottomless CoolFET CROSSVOLT DenseTrench DOME EcoSPARK E 2 CMOS TM EnSigna TM FACT FACT Quiet Series DISCLAIMER LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms FAST FASTr GlobalOptoisolator GTO HiSeC ISOPLANAR LittleFET MicroFET MICROWIRE OPTOLOGIC OPTOPLANAR PACMAN POP PowerTrench QFET QS QT Optoelectronics Quiet Series SILENT SWITCHER SMART START Star* Power Stealth SuperSOT -3 SuperSOT -6 SuperSOT -8 SyncFET TinyLogic UHC UltraFET VCX FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Formative or In Design First Production Full Production This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H

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