N-Channel 40-V (D-S) 175 C MOSFET

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1 N-Channel 4-V (D-S) 75 C MOSFET SUP/SUB85N4-4 PRODUCT SUMMARY V (BR)DSS (V) r DS(on) ( ) (A) V GS = V 85 a TO-22AB D TO-263 G DRAIN connected to TAB G D S Top View Ordering Information SUP85N4-4 SUP85N4-4 E3 (Lead (Pb)-Free) G D S Top View Ordering Information SUB85N4-4 SUB85N4-4 E3 (Lead (Pb)-Free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T C = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage V DS 4 Gate-Source Voltage V GS 2 V Continuous Drain Current (T J = 75 C) T C = 25 C 85 a T C = 25 C 85 a A Pulsed Drain Current M 24 Avalanche Current I AR 7 Repetitive Avalanche Energy b L =. mh E AR 2 mj Maximum Power Dissipation b T C = 25 C (TO-22AB and TO-263) T A = 25 C (TO-263) d P D 25 c 3.75 W Operating Junction and Storage Temperature Range T J, T stg 55 to 75 C THERMAL RESISTANCE RATINGS Junction-to-Ambient t t Parameter Symbol Limit Unit PCB Mount (TO-263) d Free Air (TO-22AB) 4 R thja 62.5 C/W Junction-to-Case R thjc.6 Notes a. Package limited. b. Duty cycle %. c. See SOA curve for voltage derating. d. When mounted on square PCB (FR-4 material). S-426 Rev. C, 5-Jul-4

2 SUP/SUB85N4-4 SPECIFICATIONS (T J =25 C UNLESS OTHERWISE NOTED) Static Parameter Symbol Test Condition Min Typ Max Unit Drain-Source Breakdown Voltage V (BR)DSS V DS = V, = 25 A 4 Gate-Threshold Voltage V GS(th) V DS = V GS, = 25 A 2 4 V Gate-Body Leakage I GSS V DS = V, V GS = 2 V na V DS = 4 V, V GS = V Zero Gate Voltage Drain Current SS V DS = 4 V, V GS = V, T J = 25 C 5 A V DS = 4 V, V GS = V, T J = 75 C 25 On-State Drain Current a (on) V DS 5 V, V GS = V 2 A V GS = V, = 3 A.3.4 Drain-Source On-State Resistance a r DS(on) V GS = V, = 3 A, T J = 25 C.55 DS(on) V GS = V, = 3 A, T J = 75 C.7 Forward Transconductance a g fs V DS = 5 V, = 3 A 3 S Dynamic b Input Capacitance C iss 762 Output Capacitance C oss V GS = V, V DS = 25 V, f = MHz 325 pf Reverse Transfer Capacitance C rss 7 Total Gate Charge c Q g 6 25 Gate-Source Charge c Q gs V DS = 3 V, V GS = V, = 85 A 4 nc Gate-Drain Charge c Q gd DS, GS, D 55 Turn-On Delay Time c t d(on) 2 35 Rise Time c t r V DD = 3 V, R L = Turn-Off Delay Time c t d(off) 85 A, V GEN = V, R g = Fall Time c t f 85 3 ns Source-Drain Diode Ratings and Characteristics (T C = 25 C) b Continuous Current I S 85 Pulsed Current I SM 24 A Forward Voltage a V SD I F = 85 A, V GS = V..4 V Reverse Recovery Time t rr I Peak Reverse Recovery Current I F = 85 A, di/dt = A/ s RM(REC) 6 9 ns A Reverse Recovery Charge Q rr.8.5 C Notes a. Pulse test; pulse width 3 s, duty cycle 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. 2 S-426 Rev. C, 5-Jul-4

3 SUP/SUB85N4-4 TYPICAL CHARACTERISTICS (25 C UNLESS NOTED) 25 Output Characteristics 25 Transfer Characteristics V GS = thru 7 V 2 6 V T C = 25 C 5 5 V 4 V C 55 C V DS Drain-to-Source Voltage (V) V GS Gate-to-Source Voltage (V) 25 Transconductance T C = 55 C.5 On-Resistance vs. Drain Current Transconductance (S) g fs C 25 C r DS(on) On-Resistance ( ) V GS = V Capacitance 2 Gate Charge C Capacitance (pf) C oss C iss Gate-to-Source Voltage (V) V GS V DS = 3 V = 85 A C rss V DS Drain-to-Source Voltage (V) Q g Total Gate Charge (nc) S-426 Rev. C, 5-Jul-4 3

4 SUP/SUB85N4-4 TYPICAL CHARACTERISTICS (25 C UNLESS NOTED) 2. On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage.6 V GS = V = 3 A r DS(on) On-Resiistance (Normalized) Source Current (A) I S T J = 5 C T J = 25 C T J Junction Temperature ( C) V SD Source-to-Drain Voltage (V) Avalanche Current vs. Time 55 Drain Source Breakdown vs. Junction Temperature (a) av I AV T A = 5 C I AV T A = 25 C V(BR)DSS (V) = 25 A t in (Sec) T J Junction Temperature ( C) 4 S-426 Rev. C, 5-Jul-4

5 SUP/SUB85N4-4 THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature Safe Operating Area 8 s s 6 4 Limited by r DS(on) ms ms ms dc 2 T C = 25 C Single Pulse T C Ambient Temperature ( C).. V DS Drain-to-Source Voltage (V) 2 Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance. Duty Cycle = Single Pulse Square Wave Pulse Duration (sec) S-426 Rev. C, 5-Jul-4 5

6 Notice Legal Disclaimer Notice Vishay Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 9 Revision: 8-Apr-5

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