T A = 25 C (Notes 3 & 5) Product Marking Reel size (inches) Tape width (mm) Quantity per reel DMC4040SSD-13 C4040SD ,500

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1 Product Line of 4 COMPLEMENTRY PIR ENHNCEMENT MODE MOSFET Product Summary Device (BR)DSS R DS(on) max I D max () T = 25 C (Notes 3 & 5) = Q1 4 = Features and Benefits Matched N & P R DS(on) - Minimizes power losses Fast switching Minimizes switching losses Dual device Reduces PCB area "Green" component and RoHS compliant (Note 1) Qualified to EC-Q11 Standards for High Reliability Q2-4 Description and pplications = = This MOSFET has been designed to ensure that R DS(on) of N and P channel FET are matched to minimize losses in both arms of the bridge. The is optimized for use in 3 phases brushless DC motor circuits (BLDC), CCFL backlighting. 3 phases BLDC motor CCFL backlighting Mechanical Data Case: SO-8 Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94- (Note 1) Moisture Sensitivity: Level 1 per J-STD-2 Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-22, Method 28 Weight:.74 grams (approximate) SO-8 S1 D1 D1 D2 G1 D1 S2 D2 G1 G2 Top iew G2 Top iew D2 S1 S2 Q1 N-Channel Q2 P-Channel Equivalent Circuit Ordering Information (Note 1) Product Marking Reel size (inches) Tape width (mm) Quantity per reel -13 C44SD ,5 Note: 1. Diodes, Inc. defines Green products as those which are RoHS compliant and contain no halogens or antimony compounds; further information about Diodes Inc. s Green Policy can be found on our website. For packaging details, go to our website. Marking Information C44SD YY WW = Manufacturer s Marking C44SD = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 1 = 21) WW = Week (1-53) Document number: DS3212 Rev of 11 March 211

2 Product Line of Maximum = 25 C unless otherwise specified Characteristic Symbol N-Channel - Q1 P-Channel - Q2 Unit Drain-Source oltage DSS 4-4 Gate-Source oltage S ±2 ±2 (Notes 3 & 5) Continuous Drain Current = 1 T = 7 C (Notes 3 & 5) I D (Notes 2 & 5) (Notes 2 & 6) Pulsed Drain Current = 1 (Notes 4 & 5) I DM Continuous Source Current (Body diode) (Notes 3 & 5) I S Pulsed Source Current (Body diode) (Notes 4 & 5) I SM Thermal = 25 C unless otherwise specified Characteristic Symbol N-Channel - Q1 P-Channel - Q2 Unit (Notes 2 & 5) Power Dissipation 1.8 W (Notes 2 & 6) P Linear Derating Factor D 14.3 mw/ C (Notes 3 & 5) (Notes 2 & 5) 1 Thermal Resistance, Junction to mbient (Notes 2 & 6) R θj 7 (Notes 3 & 5) 58 C/W Thermal Resistance, Junction to Lead (Notes 5 & 7) R θjl 51 Operating and Storage Temperature Range T J, T STG -55 to +15 C Notes: 2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 3. Same as note (2), except the device is measured at t 1 sec. 4. Same as note (2), except the device is pulsed with D =.2 and pulse width 3µs. 5. For a dual device with one active die. 6. For a device with two active die running at equal power. 7. Thermal resistance from junction to solder-point (at the end of the drain lead). Document number: DS3212 Rev of 11 March 211

3 Product Line of Thermal Characteristics I D Drain Current () 1 1 1m 1m R DS(ON) Limited DC 1s 1ms Single Pulse T amb = 25 C One active die 1ms 1ms 1us DS Drain-Source oltage () N-channel Safe Operating rea -I D Drain Current () 1 1 1m 1m R DS(ON) Limited DC 1s 1ms Single Pulse T amb = 25 C One active die 1ms 1ms 1us DS Drain-Source oltage () P-channel Safe Operating rea Thermal Resistance ( C/W) R(theta junction-to-ambient), R θj One active die D=.5 D=.2 D=.1 1µ 1m 1m 1m k Pulse Width (s) Transient Thermal Impedance Single Pulse D=.5 Max Power Dissipation (W) Two active die One active die Temperature ( C) Derating Curve Maximum Power (W) 1 1 Single Pulse T amb = 25 C One active die 1 1µ 1m 1m 1m k Pulse Width (s) Pulse Power Dissipation Document number: DS3212 Rev of 11 March 211

4 Product Line of Electrical Characteristics Q1 = 25 C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHRCTERISTICS Drain-Source Breakdown oltage B DSS 4 I D = 25μ, = Zero Gate oltage Drain Current I DSS 1. μ DS = 4, = Gate-Source Leakage I S ±1 n = ±2, DS = ON CHRCTERISTICS Gate Threshold oltage (th) I D = 25μ, DS = Static Drain-Source On-Resistance (Note 8) R DS (ON) = 1, I D = 3 Ω.28.4 = 4.5, I D = 3 Forward Transconductance (Notes 8 & 9) g fs 12.6 S DS = 5, I D = 3 Diode Forward oltage (Note 8) SD.7 1. I S = 1, = DYNMIC CHRCTERISTICS (Note 9) Input Capacitance C iss 179 pf DS = 2, = Output Capacitance C oss 16 f= 1MHz Reverse Transfer Capacitance C rss 12 Gate Resistance R g 1.3 Ω DS =, =, f= 1MHz Total Gate Charge (Note 1) Q g 16. = 4.5 Total Gate Charge (Note 1) Q g 37.6 nc DS = 2 Gate-Source Charge (Note 1) Q gs 7.8 = 1 I D = 3 Gate-Drain Charge (Note 1) Q gd 6.6 Turn-On Delay Time (Note 1) t D(on) 8.1 Turn-On Rise Time (Note 1) t r 15.1 ns DD = 2, = 1 Turn-Off Delay Time (Note 1) t D(off) 24.3 I D = 3 Turn-Off Fall Time (Note 1) t f 5.3 Notes: 8. Measured under pulsed conditions. Pulse width 3μs; duty cycle 2% 9. For design aid only, not subject to production testing. 1. Switching characteristics are independent of operating junction temperatures. Typical Characteristics Q1 N-Channel = = 5 DS I D, DRIN CURRENT () = 4.5 = 4. = 3.5 = 2.5 = DS, DRIN-SOURCE OLTGE () Fig. 1 Typical Output Characteristic I D, DRIN CURRENT () T = 15 C T = 85 C T = 25 C T = -55 C , GTE-SOURCE OLTGE () Fig. 2 Typical Transfer Characteristic Document number: DS3212 Rev of 11 March 211

5 Product Line of R DS(ON), DRIN-SOURCE ON-RESISTNCE ( Ω ) = 4.5 = I D, DRIN-SOURCE CURRENT () Fig. 3 Typical On-Resistance vs. Drain Current and Gate oltage R DS(ON), DRIN-SOURCE ON-RESISTNCE ( Ω ) = 1 T = 15 C T = 85 C T = 25 C T = -55 C I D, DRIN CURRENT () Fig. 4 Typical On-Resistance vs. Drain Current and Temperature R DSON, DRIN-SOURCE ON-RESISTNCE (NORMLIZED) = 1 I D = 2 = 4.5 I D = T, MBIENT TEMPERTURE ( C) Fig. 5 On-Resistance ariation with Temperature R DSON, DRIN-SOURCE ON-RESISTNCE ( Ω ) = 4.5 I D = 1 = 1 I D = T, MBIENT TEMPERTURE ( C) Fig. 6 On-Resistance ariation with Temperature (TH), GTE THRESHOLD OLTGE () I = 25µ D I = 1m D T, MBIENT TEMPERTURE ( C) Fig. 7 Gate Threshold ariation vs. mbient Temperature I, SOURCE CURRENT () S T = 25 C SD, SOURCE-DRIN OLTGE () Fig. 8 Diode Forward oltage vs. Current Document number: DS3212 Rev of 11 March 211

6 Product Line of 1, 1, C, CPCITNCE (pf) 1, 1 C iss C oss C rss f = 1MHz DS, DRIN-SOURCE OLTGE () Fig. 9 Typical Total Capacitance I DSS, LEKGE CURRENT (n) 1, 1 1 T = 15 C T = 85 C T = 25 C DS, DRIN-SOURCE OLTGE () Fig. 1 Typical Leakage Current vs. Drain-Source oltage 1, GTE-SOURCE OLTGE () DS = 2 I D = Q g, TOTL GTE CHRGE (nc) Fig. 11 Gate-Charge Characteristics Document number: DS3212 Rev of 11 March 211

7 Product Line of Electrical Characteristics Q2 = 25 C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHRCTERISTICS Drain-Source Breakdown oltage B DSS -4 I D = -25μ, = Zero Gate oltage Drain Current I DSS -1. μ DS = -4, = Gate-Source Leakage I S ±1 n = ±2, DS = ON CHRCTERISTICS Gate Threshold oltage (th) I D = -25μ, DS = Static Drain-Source On-Resistance (Note 11) R DS(on) = -1, I D = -3 Ω.3.45 = -4.5, I D = -3 Forward Transconductance (Notes 11 & 12) g fs 16.6 S DS = -5, I D = -3 Diode Forward oltage (Note 11) SD I S = -1, = DYNMIC CHRCTERISTICS (Note 12) Input Capacitance C iss 1643 pf DS = -2, = Output Capacitance C oss 179 f = 1MHz Reverse Transfer Capacitance C rss 128 Gate Resistance R g 6.43 Ω DS =, =, f = 1MHz Total Gate Charge (Note 13) Q g 14. = -4.5 Total Gate Charge (Note 13) Q g 33.7 nc DS = -2 Gate-Source Charge (Note 13) Q gs 5.5 = -1 I D = -3 Gate-Drain Charge (Note 13) Q gd 7.3 Turn-On Delay Time (Note 13) t D(on) 6.9 Turn-On Rise Time (Note 13) t r 14.7 ns DD = -2, = -1 Turn-Off Delay Time (Note 13) t D(off) 53.7 I D = -3 Turn-Off Fall Time (Note 13) t f 3.9 Notes: 11.Measured under pulsed conditions. Pulse width 3μs; duty cycle 2% 12. For design aid only, not subject to production testing. 13. Switching characteristics are independent of operating junction temperatures. Typical Characteristics Q2 P-Channel 3 3 -I D, DRIN CURRENT () I D, DRIN CURRENT () = -5 DS T = 85 C T = 25 C T = -55 C T = 15 C DS, DRIN-SOURCE OLTGE () Fig. 12 Typical Output Characteristic , GTE-SOURCE OLTGE () Fig. 13 Typical Transfer Characteristic Document number: DS3212 Rev of 11 March 211

8 Product Line of R DS(ON), DRIN-SOURCE ON-RESISTNCE ( Ω ) = -4.5 = I D, DRIN-SOURCE CURRENT () Fig. 14 Typical On-Resistance vs. Drain Current and Gate oltage R DS(ON), DRIN-SOURCE ON-RESISTNCE ( Ω ) = -1 T = 15 C T = 85 C T = 25 C T = -55 C I D, DRIN CURRENT () Fig. 15 Typical On-Resistance vs. Drain Current and Temperature R DSON, DRIN-SOURCE ON-RESISTNCE (NORMLIZED) = -1 I D = -2 = -4.5 I D = T, MBIENT TEMPERTURE ( C) Fig. 16 On-Resistance ariation with Temperature R DSON, DRIN-SOURCE ON-RESISTNCE ( Ω ) = -4.5 I D = -1 = -1 I D = T, MBIENT TEMPERTURE ( C) Fig. 17 On-Resistance ariation with Temperature - (TH), GTE THRESHOLD OLTGE () I = -25µ D I = -1m D -I, SOURCE CURRENT () S T = 25 C T, MBIENT TEMPERTURE ( C) Fig. 18 Gate Threshold ariation vs. mbient Temperature SD, SOURCE-DRIN OLTGE () Fig. 19 Diode Forward oltage vs. Current Document number: DS3212 Rev of 11 March 211

9 Product Line of 1, 1, C, CPCITNCE (pf) 1, 1 C iss C oss C rss DS, DRIN-SOURCE OLTGE () Fig. 2 Typical Total Capacitance -I DSS, LEKGE CURRENT (n) 1, 1 1 T = 15 C T = 85 C T = 25 C DS, DRIN-SOURCE OLTGE () Fig. 21 Typical Leakage Current vs. Drain-Source oltage 1 -, GTE-SOURCE OLTGE () DS = -2 I D = Q g, TOTL GTE CHRGE (nc) Fig. 22 Gate-Charge Characteristics Document number: DS3212 Rev of 11 March 211

10 Product Line of Package Outline Dimensions e D b E1 2 E 3 1 h Detail 45 L ~9 Gauge Plane Seating Plane Detail SO-8 Dim Min Max b.3.5 D E E e 1.27 Typ h -.35 L θ 8 ll Dimensions in mm Suggested Pad Layout X C2 C1 Dimensions alue (in mm) X.6 Y 1.55 C1 5.4 C Y Document number: DS3212 Rev of 11 March 211

11 Product Line of IMPORTNT NOTICE DIODES INCORPORTED MKES NO WRRNTY OF NY KIND, EXPRESS OR IMPLIED, WITH REGRDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WRRNTIES OF MERCHNTBILITY ND FITNESS FOR PRTICULR PURPOSE (ND THEIR EQUILENTS UNDER THE LWS OF NY JURISDICTION). and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. does not assume any liability arising out of the application or use of this document or any product described herein; neither does convey any license under its patent or trademark rights, nor the rights of others. ny Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold and all the companies whose products are represented on website, harmless against all damages. does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use products for any unintended or unauthorized application, Customers shall indemnify and hold and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of. s used herein:. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by. Further, Customers must fully indemnify and its representatives against any damages arising out of the use of products in such safety-critical, life support devices or systems. Copyright 211, Document number: DS3212 Rev of 11 March 211

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