STP6N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

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1 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP6N60FI 600 V < 1.2 Ω 3.8 A TYPICAL R DS(on) =1Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100 o C APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES (SMPS) CHOPPER REGULATORS, CONVERTERS, MOTOR CONTROL, LIGHTING FOR INDUSTRIAL AND CONSUMER ENVIRONMENT ISOWATT INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V DS Drain-source Voltage (V GS = 0) 600 V V DG R Drain- gate Voltage (R GS =20kΩ) 600 V V GS Gate-source Voltage ± 20 V I D Drain Current (continuous) at T c =25 o C 3.8 A I D Drain Current (continuous) at T c =100 o C 2.4 A IDM( ) Drain Current (pulsed) 24 A Ptot Total Dissipation at Tc =25 o C 40 W Derating Factor 0.32 W/ o C VISO Iulation Withstand Voltage (DC) 2000 V Tstg Storage Temperature -65 to 150 Tj Max. Operating Junction Temperature 150 ( ) Pulse width limited by safe operating area o C o C May /9

2 THERMAL DATA R thj-case R thj-amb Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose o C/W o C/W o C/W o C AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive 6 A (pulse width limited by T j max, δ <1%) E AS Single Pulse Avalanche Energy 370 mj (starting T j =25 o C, I D =I AR,V DD =25V) EAR Repetitive Avalanche Energy 17 mj (pulse width limited by Tj max, δ <1%) I AR Avalanche Current, Repetitive or Not-Repetitive (T c = 100 o C, pulse width limited by T j max, δ < 1%) 3.7 A ELECTRICAL CHARACTERISTICS (T case =25 o C unless otherwise specified) OFF V (BR)DSS Drain-source Breakdown Voltage I D =250µA V GS = V I DSS I GSS Zero Gate Voltage Drain Current (VGS =0) Gate-body Leakage Current (V DS =0) V DS =MaxRating VDS = Max Rating x 0.8 Tc =125 o C V GS = ± 20 V ± 100 na µa µa ON ( ) V GS(th) Gate Threshold Voltage V DS =V GS I D =250µA V RDS(on) Static Drain-source On Resistance VGS =10V ID=3A VGS =10V ID=3A Tc=100 o C ID(on) On State Drain Current VDS >ID(on) xrds(on)max VGS =10V Ω Ω 6 A DYNAMIC g fs ( ) Forward Traconductance V DS >I D(on) xr DS(on)max I D =3A S Ciss Coss C rss Input Capacitance Output Capacitance Reverse Trafer Capacitance VDS =25V f=1mhz VGS = pf pf pf 2/9

3 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON t d(on) t r Turn-on Time Rise Time V DD =300V I D =3A R G =50 Ω V GS =10V (see test circuit, figure 3) (di/dt)on Turn-on Current Slope VDD =480V ID=6A RG=50 Ω VGS =10V (see test circuit, figure 5) Q g Q gs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 480 V I D =6A V GS =10V A/µs 98 nc nc nc SWITCHING OFF tr(voff) tf t c Off-voltage Rise Time Fall Time Cross-over Time VDD =480V ID=6A RG=50 Ω VGS =10V (see test circuit, figure 5) SOURCE DRAIN DIODE I SD I SDM ( ) Source-drain Current Source-drain Current (pulsed) VSD ( ) Forward On Voltage ISD =6A VGS =0 2 V t rr Reverse Recovery I SD =6A di/dt=100a/µs 750 Time V DD = 100 V T j =150 o C Qrr IRRM Reverse Recovery Charge Reverse Recovery (see test circuit, figure 5) µc A Current ( ) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( ) Pulse width limited by safe operating area A A Safe Operating Area Thermal Impedance 3/9

4 Derating Curve Output Characteristics Trafer Characteristics Traconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage 4/9

5 Capacitance Variatio Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Turn-on Current Slope Turn-off Drain-source Voltage Slope Cross-over Time 5/9

6 Switching Safe Operating Area Accidental Overload Area Source-drain Diode Forward Characteristics Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive Waveforms 6/9

7 Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge Test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 7/9

8 ISOWATT220 MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A B D E F F F G G H L L L L L Ø H G B D A E L6 L7 L3 Ø F1 F F2 G L2 L4 P011G 8/9

9 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no respoability for the coequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No licee is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specificatiomentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronicsproducts are not authorized foruse ascritical componentsin life support devices or systems without express written approval of SGS-THOMSON Microelectonics SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 9/9

10 This datasheet has been download from: Datasheets for electronics components.

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