A I DM. W/ C V GS Gate-to-Source Voltage ± 12. Thermal Resistance Symbol Parameter Typ. Max. Units

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1 V DS 2 V V GS Max ±2 V * PD - 973A HEXFET Power MOSFET R DSon) GS = 4.V) 2. m R DSon) GS = 2.V) 27. m 6 Micro3 TM SOT-23) Applications) Load System Switch Features and Benefits Features Benefits Low R DSon) < 2m ) Lower conduction losses Industry-standard SOT-23 Package results in Multi-vendor compatibility RoHS compliant containing no lead, no bromide and no halogen Environmentally friendly Absolute Maximum Ratings Symbol Parameter Max. Units V DS Drain-Source Voltage 2 V I T A = 2 C Continuous Drain Current, V V 6.3 I T A = 7 C Continuous Drain Current, V V. A I DM Pulsed Drain Current 32 P A = 2 C Maximum Power Dissipation.3 P A = 7 C Maximum Power Dissipation.8 W Linear Derating Factor. W C V GS Gate-to-Source Voltage ± 2 V T J, T STG Junction and Storage Temperature Range - to + C Thermal Resistance Symbol Parameter Typ. Max. Units R JA Junction-to-Ambient e R JA Junction-to-Ambient t<s) f 99 ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet. Notes through are on page CW 392

2 Electric T J = 2 C unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions V BR)DSS Drain-to-Source Breakdown Voltage 2 V V GS = V, I D = 2μA V BR)DSS T J Breakdown Voltage Temp. Coefficient 7.8 mv C Reference to 2 C, I D = ma R DSon) Static Drain-to-Source On-Resistance V GS = 4.V, I D = 6.3A d m V GS = 2.V, I D =.A d V GSth) Gate Threshold Voltage..9. V V DS = V GS, I D = μa I DSS. V DS = 6V, V GS = V Drain-to-Source Leakage Current μa V DS = 6V, V GS = V, T J = 2 C I GSS Gate-to-Source Forward Leakage V GS = 2V na Gate-to-Source Reverse Leakage - V GS = -2V R G Internal Gate Resistance.7 gfs Forward Transconductance 7 S V DS = V, I D = 6.3A Q g Total Gate Charge 8.9 I D = 6.3A Q gs Gate-to-Source Charge.68 nc V DS =V Q gd Gate-to-Drain "Miller") Charge 4.4 V GS = 4.V d t don) Turn-On Delay Time 4.9 V DD =Vd t r Rise Time 7. I D =.A ns t doff) Turn-Off Delay Time 9 R G = 6.8 t f Fall Time 2 V GS = 4.V C iss Input Capacitance 7 V GS = V C oss Output Capacitance 4 pf V DS = 6V C rss Reverse Transfer Capacitance 98 ƒ =.MHz Source - Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current.3 MOSFET symbol D I SM Body Diode) showing the A Pulsed Source Current integral reverse 32 G S Body Diode)Ãc p-n junction diode. V SD Diode Forward Voltage.2 V T J = 2 C, I S = 6.3A, V GS = V d t rr Reverse Recovery Time 2 8 ns T J = 2 C, V R = V, I F =.3A Q rr Reverse Recovery Charge. 7.7 nc didt = Aμs d 2

3 I D, Drain-to-Source Current A) R DSon), Drain-to-Source On Resistance Normalized) I D, Drain-to-Source Current A) I D, Drain-to-Source Current A) VGS TOP V 4.V 3.V 2.V 2.3V 2.V.8V BOTTOM.V VGS TOP V 4.V 3.V 2.V 2.3V 2.V.8V BOTTOM.V.V.V 6μs PULSE WIDTH Tj = 2 C.. V DS, Drain-to-Source Voltage V) 6μs PULSE WIDTH Tj = C.. V DS, Drain-to-Source Voltage V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics.6.4 I D = 6.3A V GS = 4.V T J = 2 C.2 T J = C. V DS = V 6μs PULSE WIDTH V GS, Gate-to-Source Voltage V) T J, Junction Temperature C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature 3

4 I SD, Reverse Drain Current A) I D, Drain-to-Source Current A) C, Capacitance pf) V GS, Gate-to-Source Voltage V) C iss C oss C rss V GS = V, f = MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd I D = 6.3A V DS = 6V V DS = V V DS = 4.V V DS, Drain-to-Source Voltage V) Q G, Total Gate Charge nc) Fig. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage OPERATION IN THIS AREA LIMITED BY R DS on) T J = C μsec msec T J = 2 C msec. V GS = V V SD, Source-to-Drain Voltage V) Fig 7. Typical Source-Drain Diode Forward Voltage T A = 2 C Tj = C Single Pulse... V DS, Drain-to-Source Voltage V) Fig 8. Maximum Safe Operating Area 4

5 I D, Drain Current A) 7 V DS R D 6 R G V GS D.U.T. + - V DD 4 3 V GS Pulse Width µs Duty Factor 2 Fig a. Switching Time Test Circuit T A, Ambient Temperature C) Fig 9. Maximum Drain Current vs. Ambient Temperature V DS 9% % V GS t don) t r t doff) t f Fig b. Switching Time Waveforms D = Thermal Response Z thja ) CW.. SINGLE PULSE THERMAL RESPONSE ) Notes:. Duty Factor D = tt2 2. Peak Tj = P dm x Zthja + T A. E-6 E-.... t, Rectangular Pulse Duration sec) Fig. Typical Effective Transient Thermal Impedance, Junction-to-Ambient

6 R DSon), Drain-to -Source On Resistance m ) R DS on), Drain-to -Source On Resistance m ) I D = 6.3A Vgs = 2.V T J = 2 C 2 Vgs = 4.V T J = 2 C V GS, Gate -to -Source Voltage V) I D, Drain Current A) Fig 2. Typical On-Resistance vs. Gate Voltage Fig 3. Typical On-Resistance vs. Drain Current Current Regulator Same Type as D.U.T. V GS Q GS Q G Q GD 2V.2 F K.3 F D.U.T. + V - DS V G V GS 3mA Charge I G I D Current Sampling Resistors Fig 4a. Basic Gate Charge Waveform Fig 4b. Gate Charge Test Circuit 6

7 V GSth), Gate threshold Voltage V) Single Pulse Power W) I D = μa I D = 2μA T J, Temperature C ) Fig. Typical Threshold Voltage vs. Junction Temperature E-7 E-6 E- E-4 E-3 E-2 E- E+ Time sec) Fig 6. Typical Power vs. Time 7

8 , U U Micro3 SOT-23) Package Outline Dimensions are shown in millimeters inches) 6 B 6 A D 3 E E. [.6] M CBA 2 e e H 4 L c A A2 C. [.4] C A 3X b.2 [.8] M C B A NOTES: Recommended Footprint.972 DIMENSIONS SYMBOL MILLIMETERS INCHES MIN MAX MIN MAX A.89.2 A...4 A b.3. c.8.2 D E E.2.4 e.9 BSC %6 e.9 BSC %6 L.4.6 L.4 REF REF L2.2 BSC BSC 8 8 L X L 7 Micro3 SOT-23TO-236AB) Part Marking Information.9. DIMENSIONING TOLERANCING PER ANSI Y4.M DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 3. CONTROLLING DIMENSION: MILLIMETER. 4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H. 6. DIMENSIONS D AND E ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS OR INTERLEAD FLASH SHALL NOT EXCEED.2 MM [. INCH] PER SIDE. 7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE. 8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB. RWHV7KLVSDUWPDUNLQJLQIRUPDWLRQDSSOLHVWRGHYLFHVSURGXFHGDIWHU DATE CODE MARKING INSTRUCTIONS ; 2 % ) ) : ; < 2 ) % 8 : X * % ) * 3 ) ::,)3%<67,*,72)< :2. < < :. : % ; < = ::,)3%< R V D = ) N H G D Z H N R V Z WH H D LF WK G H Y LQ R E H D H H K OLQ Q Z R K WH V ) H UH < < % ) * + -. :2. :. % : ; < = Note: For the most current drawing please refer to IR website at: 8

9 Micro3 SOT-23) Tape Reel Information Dimensions are shown in millimeters inches) 2..8 ).9.77 ) 4..6 ) ).6.62 )..6 ).8.72 ).6.6 ).32. ).2.4 ) TR ) ) ) ) FEED DIRECTION 4..6 ) )..43 ).9.36 ).3.3 ).2. ) ) MAX ) ) NOTES:. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-48 EIA-4. Note: For the most current drawing please refer to IR website at: 9

10 Orderable part number Package Type Standard Pack Form Quantity Micro3 SOT-23) Tape and Reel 3 Note Qualification information Qualification level Moisture Sensitivity Level RoHS compliant Cons umer per JE DEC JE S D47F guidelines ) MS L Micro3 SOT-23) per IPCJE DEC J-S T D-2D ) Yes Qualification standards can be found at International Rectifier s web site Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: Applicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 4μs; duty cycle 2%. ƒ Surface mounted on in square Cu board. Refer to application note #AN-994. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: N. SEpulveda Blvd., El Segundo, California 924, USA Tel: 3) 22-7 TAC Fax: 3) Visit us at for sales contact information.32

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