5A 3A. Symbol Parameter Value Unit

Save this PDF as:
 WORD  PNG  TXT  JPG

Size: px
Start display at page:

Download "5A 3A. Symbol Parameter Value Unit"

Transcription

1 STP5NA50 STP5NA50FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP5NA50 STP5NA50FI 500 V 500 V <1.6Ω <1.6Ω 5A 3A TYPICAL R DS(on) = 1.2 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100 o C LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low R DS(on) and gate charge, unequalled ruggedness and superior switching performance TO-220 ISOWATT220 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP5NA50 STP5NA50FI V DS Drain-source Voltage (V GS =0) 500 V V DG R Drain-gate Voltage (R GS =20kΩ) 500 V VGS Gate-source Voltage ± 30 V I D Drain Current (continuous) at T c =25 o C 5 3 A I D Drain Current (continuous) at T c =100 o C A IDM( ) Drain Current (pulsed) A Ptot Total Dissipation at Tc =25 o C W Derating Factor W/ o C VISO Iulation Withstand Voltage (DC) 2000 V Tstg Storage Temperature -65 to 150 o C T j Max. Operating Junction Temperature 150 o C ( ) Pulse width limited by safe operating area November /10

2 THERMAL DATA TO-220 ISOWATT220 Rthj-case Thermal Resistance Junction-case Max Rthj-amb Rthc- sin k T l Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose o C/W o C/W o C/W o C AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit I AR E AS EAR I AR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ <1%) Single Pulse Avalanche Energy (starting Tj =25 o C, ID =IAR, VDD =50V) Repetitive Avalanche Energy (pulse width limited by T j max, δ <1%) Avalanche Current, Repetitive or Not-Repetitive (T c = 100 o C, pulse width limited by T j max, δ < 1%) 5 A 280 mj 7.4 mj 3.3 A ELECTRICAL CHARACTERISTICS (Tcase =25 o C unless otherwise specified) OFF Symbol Parameter Test Conditio Min. Typ. Max. Unit V (BR)DSS Drain-source Breakdown Voltage I D =250µA V GS = V IDSS I GSS Zero Gate Voltage Drain Current (VGS =0) Gate-body Leakage Current (VDS =0) VDS =MaxRating VDS = Max Rating x 0.8 Tc =125 o C V GS = ± 30 V ± 100 na µa µa ON ( ) Symbol Parameter Test Conditio Min. Typ. Max. Unit V GS(th) Gate Threshold Voltage V DS =V GS I D =250µA V RDS(on) Static Drain-source On VGS =10V ID= 2.5 A Ω Resistance I D(on) On State Drain Current V DS >I D(on) xr DS(on)max VGS =10V 5 A DYNAMIC Symbol Parameter Test Conditio Min. Typ. Max. Unit g fs ( ) Ciss Coss Crss Forward Traconductance Input Capacitance Output Capacitance Reverse Trafer Capacitance V DS >I D(on) xr DS(on)max I D =2.5A S VDS =25V f=1mhz VGS = pf pf pf 2/10

3 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditio Min. Typ. Max. Unit t d(on) t r Turn-on Time Rise Time V DD =250V I D =2.5A R G =15 Ω V GS =10V (see test circuit, figure 3) (di/dt)on Turn-on Current Slope VDD =400V ID=5A RG=15 Ω VGS =10V (see test circuit, figure 5) Q g Q gs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 400 V I D =5A V GS =10V A/µs 45 nc nc nc SWITCHING OFF Symbol Parameter Test Conditio Min. Typ. Max. Unit tr(voff) tf t c Off-voltage Rise Time Fall Time Cross-over Time VDD =400V ID=5A RG=15 Ω VGS =10V (see test circuit, figure 5) SOURCE DRAIN DIODE Symbol Parameter Test Conditio Min. Typ. Max. Unit I SD I SDM ( ) Source-drain Current Source-drain Current (pulsed) VSD ( ) Forward On Voltage ISD =5A VGS =0 1.6 V t rr Reverse Recovery I SD =5A di/dt=100a/µs 380 Time V DD =50V T j =150 o C Qrr IRRM Reverse Recovery Charge Reverse Recovery (see test circuit, figure 5) µc A Current ( ) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( ) Pulse width limited by safe operating area 5 20 A A Safe Operating Areas for TO-220 Safe Operating Areas for ISOWATT220 3/10

4 Thermal Impedeance For TO-220 Thermal Impedance For ISOWATT220 Derating Curve For TO-220 Derating Curve For ISOWATT220 Output Characteristics Trafer Characteristics 4/10

5 Traconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variatio Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature 5/10

6 Turn-on Current Slope Turn-off Drain-source Voltage Slope Cross-over Time Switching Safe Operating Area Accidental Overload Area Source-drain Diode Forward Characteristics 6/10

7 Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive Waveforms Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge Test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Reverse Recovery Time 7/10

8 TO-220 MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A C D D E F F F G G H L L L L L L DIA F G D1 C D A E L2 G1 H2 F1 Dia. L5 L7 L9 F2 L6 L4 P011C 8/10

9 ISOWATT220 MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A B D E F F F G G H L L L L L Ø H G B D A E L6 L7 L3 Ø F1 F F2 G L2 L4 P011G 9/10

10 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no respoability for the coequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No licee is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specificatio mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in lifesupport devices or systems without express written approval of SGS-THOMSON Microelectonics SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSONMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 10/10

STP6N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STP6N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP6N60FI 600 V < 1.2 Ω 3.8 A TYPICAL R DS(on) =1Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT

More information

IRF830. N - CHANNEL 500V - 1.35Ω - 4.5A - TO-220 PowerMESH MOSFET

IRF830. N - CHANNEL 500V - 1.35Ω - 4.5A - TO-220 PowerMESH MOSFET IRF830 N - CHANNEL 500V - 1.35Ω - 4.5A - TO-220 PowerMESH MOSFET TYPE V DSS R DS(on) I D IRF830 500 V < 1.5 Ω 4.5 A TYPICAL R DS(on) = 1.35 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY

More information

IRF740 N-CHANNEL 400V - 0.46Ω - 10A TO-220 PowerMESH II MOSFET

IRF740 N-CHANNEL 400V - 0.46Ω - 10A TO-220 PowerMESH II MOSFET N-CHANNEL 400V - 0.46Ω - 10A TO-220 PowerMESH II MOSFET TYPE V DSS R DS(on) I D IRF740 400 V < 0.55 Ω 10 A TYPICAL R DS (on) = 0.46Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE VERY

More information

IRFP450. N - CHANNEL 500V - 0.33Ω - 14A - TO-247 PowerMESH MOSFET

IRFP450. N - CHANNEL 500V - 0.33Ω - 14A - TO-247 PowerMESH MOSFET IRFP450 N - CHANNEL 500V - 0.33Ω - 14A - TO-247 PowerMESH MOSFET TYPE V DSS R DS(on) I D IRFP450 500 V < 0.4 Ω 14 A TYPICAL R DS(on) = 0.33 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY

More information

Symbol Parameter Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive

Symbol Parameter Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive BUZ11 N - CHANNEL 50V - 0.03Ω - 30A -TO-220 STripFET POWER MOSFET TYPE V DSS R DS(on) I D BUZ11 50 V < 0.04 Ω 30 A TYPICAL R DS(on) = 0.03 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT

More information

Symbol Parameter Value Unit V DS Drain-source Voltage (V GS =0) 50 V V DGR Drain- gate Voltage (R GS =20kΩ) 50 V

Symbol Parameter Value Unit V DS Drain-source Voltage (V GS =0) 50 V V DGR Drain- gate Voltage (R GS =20kΩ) 50 V BUZ71A N - CHANNEL 50V - 0.1Ω - 13A TO-220 STripFET POWER MOSFET TYPE V DSS R DS(on) I D BUZ71A 50 V < 0.12 Ω 13 A TYPICAL RDS(on) = 0.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT

More information

STW20NM50 N-CHANNEL 550V @ Tjmax - 0.20Ω - 20ATO-247 MDmesh MOSFET

STW20NM50 N-CHANNEL 550V @ Tjmax - 0.20Ω - 20ATO-247 MDmesh MOSFET N-CHANNEL 550V @ Tjmax - 0.20Ω - 20ATO-247 MDmesh MOSFET TYPE V DSS (@Tjmax) R DS(on) I D STW20NM50 550V < 0.25Ω 20 A TYPICAL R DS (on) = 0.20Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED

More information

N - CHANNEL100V - 00.50Ω - 30A - TO-220/TO-220FI POWER MOSFET 30 A 16 A

N - CHANNEL100V - 00.50Ω - 30A - TO-220/TO-220FI POWER MOSFET 30 A 16 A IRF540 IRF540FI N - CHNNEL100V - 00.50Ω - 30 - TO-220/TO-220FI POWER MOSFET IRF540 IRF540FI TYPE V DSS R DS(on) I D 100 V 100 V

More information

Symbol Parameter Value Unit V DS Drain-source Voltage (V GS = 0) 50 V V DGR Drain- gate Voltage (R GS = 20 kω) 50 V

Symbol Parameter Value Unit V DS Drain-source Voltage (V GS = 0) 50 V V DGR Drain- gate Voltage (R GS = 20 kω) 50 V BUZ11 N - CHANNEL 50V - 0.03Ω - 33A TO-220 STripFET MOSFET TYPE V DSS R DS(on) I D BUZ11 50 V < 0.04 Ω 33 A TYPICAL RDS(on) = 0.03 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY

More information

STP62NS04Z N-CHANNEL CLAMPED 12.5mΩ - 62A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET

STP62NS04Z N-CHANNEL CLAMPED 12.5mΩ - 62A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET N-CHANNEL CLAMPED 12.5mΩ - 62A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET TYPE V DSS R DS(on) I D STP62NS04Z CLAMPED

More information

STP16NF06L STP16NF06LFP

STP16NF06L STP16NF06LFP STP16NF06L STP16NF06LFP N-CHNNEL 60V - 0.07 Ω - 16 TO-220/TO-220FP STripFET II POWER MOSFET TYPE V DSS R DS(on) I D STP16NF06L STP60NF06LFP 60 V 60 V

More information

STW34NB20 N-CHANNEL 200V - 0.062 Ω - 34A TO-247 PowerMESH MOSFET

STW34NB20 N-CHANNEL 200V - 0.062 Ω - 34A TO-247 PowerMESH MOSFET N-CHANNEL 200V - 0.062 Ω - 34A TO-247 PowerMESH MOSFET Table 1. General Features Figure 1. Package Type V DSS R DS(on) I D STW34NB20 200 V < 0.075 Ω 34 A FEATURES SUMMARY TYPICAL R DS(on) = 0.062 Ω EXTREMELY

More information

STD30NF06L N-CHANNEL 60V Ω - 35A DPAK/IPAK STripFET POWER MOSFET

STD30NF06L N-CHANNEL 60V Ω - 35A DPAK/IPAK STripFET POWER MOSFET N-CHANNEL 60V - 0.022Ω - 35A DPAK/IPAK STripFET POWER MOSFET TYPE V DSS R DS(on) I D STD30NF06L 60 V

More information

STW52NK25Z N-CHANNEL 250V Ω - 52A TO-247 Zener-Protected SuperMESH MOSFET

STW52NK25Z N-CHANNEL 250V Ω - 52A TO-247 Zener-Protected SuperMESH MOSFET N-CHANNEL 250V - 0.033Ω - 52A TO-247 Zener-Protected SuperMESH MOSFET Table 1: General Features TYPE V DSS R DS(on) I D Pw STW52NK25Z 250 V < 0.045 Ω 52 A 300 W TYPICAL R DS (on) = 0.033 Ω EXTREMELY HIGH

More information

STP80NF55-08 STB80NF55-08 STB80NF55-08-1 N-CHANNEL 55V - 0.0065 Ω - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET

STP80NF55-08 STB80NF55-08 STB80NF55-08-1 N-CHANNEL 55V - 0.0065 Ω - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET STP80NF55-08 STB80NF55-08 STB80NF55-08-1 N-CHANNEL 55V - 0.0065 Ω - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET TYPE V DSS R DS(on) I D STB80NF55-08/-1 STP80NF55-08 55 V 55 V

More information

STP6NK60Z - STP6NK60ZFP STB6NK60Z - STB6NK60Z-1 N-CHANNEL 600V - 1Ω - 6A TO-220/TO-220FP/D 2 PAK/I 2 PAK Zener-Protected SuperMESH Power MOSFET

STP6NK60Z - STP6NK60ZFP STB6NK60Z - STB6NK60Z-1 N-CHANNEL 600V - 1Ω - 6A TO-220/TO-220FP/D 2 PAK/I 2 PAK Zener-Protected SuperMESH Power MOSFET STP6NK60Z - STP6NK60ZFP STB6NK60Z - STB6NK60Z-1 N-CHANNEL 600V - 1Ω - 6A TO-220/TO-220FP/D 2 PAK/I 2 PAK Zener-Protected SuperMESH Power MOSFET TYPE V DSS R DS(on) I D Pw STP6NK60Z STP6NK60ZFP STB6NK60Z

More information

STP10NK60Z/FP, STB10NK60Z/-1 STW10NK60Z N-CHANNEL 600V-0.65Ω-10A TO-220/FP/D 2 PAK/I 2 PAK/TO-247 Zener-Protected SuperMESH Power MOSFET

STP10NK60Z/FP, STB10NK60Z/-1 STW10NK60Z N-CHANNEL 600V-0.65Ω-10A TO-220/FP/D 2 PAK/I 2 PAK/TO-247 Zener-Protected SuperMESH Power MOSFET STP10NK60Z/FP, STB10NK60Z/-1 STW10NK60Z N-CHANNEL 600V-0.65Ω-10A TO-220/FP/D 2 PAK/I 2 PAK/TO-247 Zener-Protected SuperMESH Power MOSFET TYPE V DSS R DS(on) I D Pw STP10NK60Z STP10NK60ZFP STB10NK60Z STB10NK60Z-1

More information

STP60NF06FP. N-channel 60V - 0.014Ω - 30A TO-220FP STripFET II Power MOSFET. General features. Description. Internal schematic diagram.

STP60NF06FP. N-channel 60V - 0.014Ω - 30A TO-220FP STripFET II Power MOSFET. General features. Description. Internal schematic diagram. N-channel 60V - 0.014Ω - 30A TO-220FP STripFET II Power MOSFET General features Type V DSS R DS(on) I D STP60NF06FP 60V

More information

VNP5N07 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET

VNP5N07 OMNIFET: FULLY AUTOPROTECTED POWER MOSFET "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE Vclamp RDS(on) Ilim VNP5N07 70 V 0.2 Ω 5 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM

More information

STP60NF06. N-channel 60V - 0.014Ω - 60A TO-220 STripFET II Power MOSFET. General features. Description. Internal schematic diagram.

STP60NF06. N-channel 60V - 0.014Ω - 60A TO-220 STripFET II Power MOSFET. General features. Description. Internal schematic diagram. N-channel 60V - 0.014Ω - 60A TO-220 STripFET II Power MOSFET General features Type V DSS R DS(on) I D STP60NF06 60V

More information

STP10NK80ZFP STP10NK80Z - STW10NK80Z

STP10NK80ZFP STP10NK80Z - STW10NK80Z STP10NK80ZFP STP10NK80Z - STW10NK80Z N-channel 800V - 0.78Ω - 9A - TO-220/FP-TO-247 Zener-protected supermesh TM MOSFET General features Type V DSS R DS(on) I D Pw STP10NK80Z 800V

More information

Features. Description. Table 1. Device summary. Order code Marking Package Packing. STP110N8F6 110N8F6 TO-220 Tube

Features. Description. Table 1. Device summary. Order code Marking Package Packing. STP110N8F6 110N8F6 TO-220 Tube N-channel 80 V, 0.0056 Ω typ.,110 A, STripFET F6 Power MOSFET in a TO-220 package Features Datasheet - production data Order code V DS R DS(on)max I D P TOT TAB STP110N8F6 80 V 0.0065 Ω 110 A 200 W TO-220

More information

STN3NF06L. N-channel 60 V, 0.07 Ω, 4 A, SOT-223 STripFET II Power MOSFET. Features. Application. Description

STN3NF06L. N-channel 60 V, 0.07 Ω, 4 A, SOT-223 STripFET II Power MOSFET. Features. Application. Description N-channel 60 V, 0.07 Ω, 4 A, SOT-223 STripFET II Power MOSFET Features Type V DSS (@Tjmax) Exceptional dv/dt capability Avalanche rugged technology 100% avalanche tested R DS(on) max STN3NF06L 60 V < 0.1

More information

STP55NF06L STB55NF06L - STB55NF06L-1

STP55NF06L STB55NF06L - STB55NF06L-1 General features STP55NF06L STB55NF06L - STB55NF06L-1 N-channel 60V - 0.014Ω - 55A TO-220/D 2 PAK/I 2 PAK STripFET II Power MOSFET Type V DSS R DS(on) I D STP55NF06L 60V

More information

Automotive-grade N-channel 60 V, 21 mω typ., 32 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 package. Features. Description

Automotive-grade N-channel 60 V, 21 mω typ., 32 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 package. Features. Description Automotive-grade N-channel 60 V, 21 mω typ., 32 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STL8N6LF6AG 60 V 27 mω 32

More information

STB75NF75 STP75NF75 - STP75NF75FP

STB75NF75 STP75NF75 - STP75NF75FP STB75NF75 STP75NF75 - STP75NF75FP N-channel 75V - 0.0095Ω - 80A - TO-220 - TO-220FP - D 2 PAK STripFET II Power MOSFET General features Type V DSS R DS(on) I D STB75NF75 75V

More information

IRF150 [REF:MIL-PRF-19500/543] 100V, N-CHANNEL. Absolute Maximum Ratings

IRF150 [REF:MIL-PRF-19500/543] 100V, N-CHANNEL. Absolute Maximum Ratings PD - 90337G REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRF150 100V 0.055Ω 38A IRF150 JANTX2N6764 JANTXV2N6764 [REF:MIL-PRF-19500/543]

More information

STB4NK60Z, STB4NK60Z-1, STD4NK60Z STD4NK60Z-1, STP4NK60Z,STP4NK60ZFP

STB4NK60Z, STB4NK60Z-1, STD4NK60Z STD4NK60Z-1, STP4NK60Z,STP4NK60ZFP STB4NK60Z, STB4NK60Z-1, STD4NK60Z STD4NK60Z-1, STP4NK60Z,STP4NK60ZFP N-channel 600 V - 1.76 Ω - 4 A SuperMESH Power MOSFET DPAK - D 2 PAK - IPAK - I 2 PAK - TO-220 - TO-220FP Features Type V DSS R DS(on)

More information

200V, N-CHANNEL. Absolute Maximum Ratings. Features: www.irf.com 1 PD - 90370

200V, N-CHANNEL. Absolute Maximum Ratings. Features: www.irf.com 1 PD - 90370 PD - 90370 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) IRF240 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF240 200V 0.18Ω 18A The HEXFET technology

More information

STGW40NC60V N-CHANNEL 50A - 600V - TO-247 Very Fast PowerMESH IGBT

STGW40NC60V N-CHANNEL 50A - 600V - TO-247 Very Fast PowerMESH IGBT N-CHANNEL 50A - 600V - TO-247 Very Fast PowerMESH IGBT Table 1: General Features STGW40NC60V 600 V < 2.5 V 50 A HIGH CURRENT CAPABILITY HIGH FREQUENCY OPERATION UP TO 50 KHz LOSSES INCLUDE DIODE RECOVERY

More information

Features. Description. Table 1. Device summary. Order code Marking Packages Packaging. STP110N55F6 110N55F6 TO-220 Tube

Features. Description. Table 1. Device summary. Order code Marking Packages Packaging. STP110N55F6 110N55F6 TO-220 Tube N-channel 55 V, 4.5 Ω typ., 110 A STripFET F6 Power MOSFET in a TO-220 package Features Datasheet - production data Order code V DS R DS(on) max. I D TAB STP110N55F6 55 V 5.2 mω 110 A TO-220 1 2 3 Low

More information

N-channel enhancement mode TrenchMOS transistor

N-channel enhancement mode TrenchMOS transistor FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d V DSS = V Low on-state resistance Fast switching I D = A High thermal cycling performance Low thermal resistance R DS(ON) mω (V GS = V) g s R DS(ON)

More information

STB60N55F3, STD60N55F3, STF60N55F3 STI60N55F3, STP60N55F3, STU60N55F3

STB60N55F3, STD60N55F3, STF60N55F3 STI60N55F3, STP60N55F3, STU60N55F3 STB60N55F3, STD60N55F3, STF60N55F3 STI60N55F3, STP60N55F3, STU60N55F3 N-channel 55 V, 6.5 mω, 80 A, DPAK, IPAK, D 2 PAK, I 2 PAK, TO-220 TO-220FP STripFET III Power MOSFET Features Type V DSS R DS(on)

More information

Transistor MOS. Ce Dossier comporte 10 pages comme suit : - Page 1 : Fonctionnement du transistor MOS

Transistor MOS. Ce Dossier comporte 10 pages comme suit : - Page 1 : Fonctionnement du transistor MOS Transistor MOS Ce Dossier comporte 10 pages comme suit : - Page 1 : Fonctionnement du transistor MOS - Pages 2 à 9 : Documentation constructeur VNP49N04 NOTA : Tous les documents fournis seront remis à

More information

AOT402 N-Channel Enhancement Mode Field Effect Transistor

AOT402 N-Channel Enhancement Mode Field Effect Transistor AOT42 N-Channel Enhancement Mode Field Effect Transistor General Description The AOT42 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable

More information

IRFF9130 JANS2N6849 JANTXV2N6849 THRU-HOLE - TO-205AF (TO-39) REF:MIL-PRF-19500/ V, P-CHANNEL PD-90550E. Absolute Maximum Ratings

IRFF9130 JANS2N6849 JANTXV2N6849 THRU-HOLE - TO-205AF (TO-39) REF:MIL-PRF-19500/ V, P-CHANNEL PD-90550E. Absolute Maximum Ratings PD-90550E REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE - TO-205AF (TO-39) IRFF9130 JANTX2N6849 JANTXV2N6849 JANS2N6849 REF:MIL-PRF-19500/564 100V, P-CHANNEL Product Summary Part Number

More information

C Soldering Temperature, for 10 seconds 300 (1.6mm from case )

C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description Advanced

More information

HEXFET MOSFET TECHNOLOGY

HEXFET MOSFET TECHNOLOGY PD-90711C POWER MOSFET THRU-HOLE (TO-254AA) IRFMG50 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFMG50 2.0Ω 5.6A HEXFET MOSFET technology is the key to International

More information

STP120NF10, STB120NF10 STF120NF10, STW120NF10

STP120NF10, STB120NF10 STF120NF10, STW120NF10 STP120NF10, STB120NF10 STF120NF10, STW120NF10 N-channel 100 V, 0.009 Ω, 110 A STripFET II Power MOSFET in TO-247, TO-220, D²PAK, TO-220FP Features Type V DSS R DS(on) max I D STW120NF10 STP120NF10 STB120NF10

More information

CoolMOS TM Power Transistor

CoolMOS TM Power Transistor CoolMOS TM Power Transistor Features New revolutionary high voltage technology Intrinsic fast-recovery body diode Extremely low reverse recovery charge Ultra low gate charge Extreme dv /dt rated Product

More information

SPW32N50C3. Cool MOS Power Transistor V DS @ T jmax 560 V

SPW32N50C3. Cool MOS Power Transistor V DS @ T jmax 560 V SPW3N5C3 Cool MOS Power Transistor V DS @ T jmax 56 V Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances

More information

Silicon carbide Power MOSFET: 20 A, 1200 V, 189 mω (typ., T J =150 C), N-channel in a HiP247. Features. Description. Table 1.

Silicon carbide Power MOSFET: 20 A, 1200 V, 189 mω (typ., T J =150 C), N-channel in a HiP247. Features. Description. Table 1. Silicon carbide Power MOSFET: 20 A, 1200 V, 189 mω (typ., T J =150 C), N-channel in a HiP247 Features Datasheet - production data 1 2 3 HiP247 Figure 1. Internal schematic diagram Very tight variation

More information

N-Channel 60-V (D-S), 175 C MOSFET

N-Channel 60-V (D-S), 175 C MOSFET N-Channel 6-V (D-S), 75 C MOSFET SUP/SUB7N6-4 V (BR)DSS (V) r DS(on) ( ) (A) 6.4 7 a TO-22AB D TO-263 DRAIN connected to TAB G G D S Top View SUP7N6-4 G D S Top View SUB7N6-4 S N-Channel MOSFET Parameter

More information

Part No. Package Marking Shipping

Part No. Package Marking Shipping 0.5A, 600V N CHANNEL MOSFET GENERAL DESCRIPTION SVDN60DB is an N channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S Rin TM structure DMOS technology.

More information

Features. Symbol JEDEC TO-220AB

Features. Symbol JEDEC TO-220AB Data Sheet June 1999 File Number 2253.2 3A, 5V,.4 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching

More information

UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET

UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 50N06 50 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION TO-263 TO-25 The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast

More information

AO4813 Dual P-Channel Enhancement Mode Field Effect Transistor

AO4813 Dual P-Channel Enhancement Mode Field Effect Transistor Dual PChannel Enhancement Mode Field Effect Transistor General Description The AO4813/L uses advanced trench technology to provide excellent R DS(ON), and low gate charge. This device is suitable for use

More information

P-channel enhancement mode MOS transistor

P-channel enhancement mode MOS transistor FEATURES SYMBOL QUICK REFERENCE DATA Very low threshold voltage s V DS = - V Fast switching Logic level compatible I D = -.47 A Subminiature surface mount g package R DS(ON). Ω (V GS =.5 V) GENERAL DESCRIPTION

More information

L7800 SERIES POSITIVE VOLTAGE REGULATORS

L7800 SERIES POSITIVE VOLTAGE REGULATORS SERIES POSITIVE VOLTAGE REGULATORS OUTPUT CURRENT UP TO 1.5 A OUTPUT VOLTAGES OF 5; 5.2; 6; 8; 8.5; 9; 12; 15; 18; 24V THERMAL OVERLOAD PROTECTION SHORT CIRCUIT PROTECTION OUTPUT TRANSITION SOA PROTECTION

More information

AP4511GM Pb Free Plating Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp.

AP4511GM Pb Free Plating Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. AP5GM Pb Free Plating Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BV DSS 35V Low On-resistance D D D R DS(ON) 5mΩ D D D D D Fast

More information

N-channel enhancement mode MOS transistor

N-channel enhancement mode MOS transistor FEATURES SYMBOL QUICK REFERENCE DATA Very low threshold voltage d V DS = V Fast switching Logic level compatible I D =.5 A Subminiature surface mount package R DS(ON) 5 mω (V GS =.5 V) g s V GS(TO).4 V

More information

AOD4189 P-Channel Enhancement Mode Field Effect Transistor

AOD4189 P-Channel Enhancement Mode Field Effect Transistor AOD489 PChannel Enhancement Mode Field Effect Transistor General Description The AOD489 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. With the excellent

More information

BSN20. 1. Description. 2. Features. 3. Applications. 4. Pinning information. N-channel enhancement mode field-effect transistor

BSN20. 1. Description. 2. Features. 3. Applications. 4. Pinning information. N-channel enhancement mode field-effect transistor Rev. 3 26 June 2 Product specification. Description in a plastic package using TrenchMOS technology. Product availability: in SOT23. 2. Features TrenchMOS technology Very fast switching Logic level compatible

More information

SMPS MOSFET. V DSS Rds(on) max I D

SMPS MOSFET. V DSS Rds(on) max I D Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching SMPS MOSFET PD 92004 IRF740A HEXFET Power MOSFET V DSS Rds(on) max I D 400V 0.55Ω A Benefits

More information

N-Channel 40-V (D-S) 175 C MOSFET

N-Channel 40-V (D-S) 175 C MOSFET N-Channel 4-V (D-S) 75 C MOSFET SUP/SUB85N4-4 PRODUCT SUMMARY V (BR)DSS (V) r DS(on) ( ) (A) 4.4 @ V GS = V 85 a TO-22AB D TO-263 G DRAIN connected to TAB G D S Top View Ordering Information SUP85N4-4

More information

Power MOSFET FEATURES. IRF740APbF SiHF740A-E3 IRF740A SiHF740A

Power MOSFET FEATURES. IRF740APbF SiHF740A-E3 IRF740A SiHF740A Power MOSFET PRODUCT SUMMARY V DS (V) 400 R DS(on) ( ) = 0 V 0.55 Q g (Max.) (nc) 36 Q gs (nc) 9.9 Q gd (nc) 6 Configuration Single D TO220AB G FEATURES Low Gate Charge Q g Results in Simple Drive Requirement

More information

Power MOSFET FEATURES. IRFZ44PbF SiHFZ44-E3 IRFZ44 SiHFZ44 T C = 25 C

Power MOSFET FEATURES. IRFZ44PbF SiHFZ44-E3 IRFZ44 SiHFZ44 T C = 25 C Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) (Ω) V GS = 10 V 0.028 Q g (Max.) (nc) 67 Q gs (nc) 18 Q gd (nc) 25 Configuration Single FEATURES Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching

More information

OptiMOS 3 Power-Transistor

OptiMOS 3 Power-Transistor Type IPD6N3L G OptiMOS 3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications Product Summary V DS

More information

Power MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20

Power MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20 Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) = 0.55 Q g (Max.) (nc) 63 Q gs (nc) 9.0 Q gd (nc) 3 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of

More information

Power MOSFET. IRF510PbF SiHF510-E3 IRF510 SiHF510. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20

Power MOSFET. IRF510PbF SiHF510-E3 IRF510 SiHF510. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20 Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) () = 0.54 Q g max. (nc) 8.3 Q gs (nc) 2.3 Q gd (nc) 3.8 Configuration Single D TO220AB G FEATURES Dynamic dv/dt rating Available Repetitive avalanche rated

More information

TSM2N7002K 60V N-Channel MOSFET

TSM2N7002K 60V N-Channel MOSFET SOT-23 SOT-323 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (ma) 5 @ V GS = 10V 100 60 5.5 @ V GS = 5V 100 Features Low On-Resistance ESD Protection High Speed Switching

More information

Power MOSFET FEATURES. IRL540PbF SiHL540-E3 IRL540 SiHL540

Power MOSFET FEATURES. IRL540PbF SiHL540-E3 IRL540 SiHL540 Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) = 5.0 V 0.077 Q g (Max.) (nc) 64 Q gs (nc) 9.4 Q gd (nc) 27 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel

More information

OptiMOS TM 3 Power-Transistor

OptiMOS TM 3 Power-Transistor BSC47N8NS3 G OptiMOS TM 3 Power-Transistor Features Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) Product Summary

More information

Features G D. TO-220 FQP Series

Features G D. TO-220 FQP Series FQP33N10 FQP33N10 100V N-Channel MOSFET April 2000 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe,

More information

Power MOSFET FEATURES. IRF610PbF SiHF610-E3 IRF610 SiHF610. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 200 V Gate-Source Voltage V GS ± 20

Power MOSFET FEATURES. IRF610PbF SiHF610-E3 IRF610 SiHF610. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 200 V Gate-Source Voltage V GS ± 20 Power MOSFET PRODUCT SUMMARY (V) 00 R DS(on) ( ) = 1.5 Q g (Max.) (nc) 8. Q gs (nc) 1.8 Q gd (nc) 4.5 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of

More information

N-Channel 20-V (D-S) 175 C MOSFET

N-Channel 20-V (D-S) 175 C MOSFET N-Channel -V (D-S) 75 C MOSFET SUD7N-4P PRODUCT SUMMARY V DS (V) r DS(on) ( ) (A) a.37 @ V GS = V 37.6 @ V GS = 4.5 V 9 TO-5 D FEATURES TrenchFET Power MOSFET 75 C Junction Temperature PWM Optimized for

More information

IRFP460LC PD - 9.1232. HEXFET Power MOSFET V DSS = 500V. R DS(on) = 0.27Ω I D = 20A

IRFP460LC PD - 9.1232. HEXFET Power MOSFET V DSS = 500V. R DS(on) = 0.27Ω I D = 20A HEXFET Power MOSFET PD - 9.232 IRFP460LC Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, C oss, C rss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive

More information

V DSS Rds(on) max I D

V DSS Rds(on) max I D Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate,

More information

OptiMOS Power-Transistor Product Summary

OptiMOS Power-Transistor Product Summary OptiMOS Power-Transistor Product Summary V DS 55 V R DS(on),max 4) 35 mω Features Dual N-channel Logic Level - Enhancement mode AEC Q11 qualified I D 2 A PG-TDSON-8-4 MSL1 up to 26 C peak reflow 175 C

More information

IRLR8743PbF IRLU8743PbF HEXFET Power MOSFET

IRLR8743PbF IRLU8743PbF HEXFET Power MOSFET Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free

More information

V DSS Rds(on) max I D

V DSS Rds(on) max I D SMPS MOSFET Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l

More information

OptiMOS TM Power-Transistor

OptiMOS TM Power-Transistor Type BSC28N6NS OptiMOS TM Power-Transistor Features Optimized for high performance SMPS, e.g. sync. rec. % avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC ) for target

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) 2N2219A 2N2222A DESCRIPTION The 2N2219A and 2N2222A are silicon Planar Epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 (for 2N2222A) metal case. They are designed for high speed

More information

V DSS R DS(on) max Qg. 30V 3.2mΩ 36nC

V DSS R DS(on) max Qg. 30V 3.2mΩ 36nC PD - 96232 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification

More information

V DSS R DS(on) typ. Trr typ. I D

V DSS R DS(on) typ. Trr typ. I D Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications Lead-Free SMPS MOSFET PD - 9570 HEXFET Power MOSFET V DSS R DS(on) typ.

More information

P-Channel 40-V (D-S), 175 C MOSFET

P-Channel 40-V (D-S), 175 C MOSFET New Product P-Channel 4-V (D-S), 75 C MOSFET SUD5P4-9L PRODUCT SUMMARY V DS (V) r DS(on) (Ω) (A) d.94 at V GS = - V - 5-4.45 at V GS = - 4.5 V - 5 FEATURES TrenchFET Power MOSFETS 75 C Junction Temperature

More information

DISCONTINUED. Product Marking Reel size (inches) Tape width (mm) Quantity per reel DMN4009LK3-13 N4009L ,500

DISCONTINUED. Product Marking Reel size (inches) Tape width (mm) Quantity per reel DMN4009LK3-13 N4009L ,500 40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V (BR)DSS 40V R DS(on) T A = 25 C 8.5mΩ @ = V 27.6A 4mΩ @ = 4.5V 2.5A Description and Applications This new generation MOSFET has been designed to

More information

OptiMOS TM 3 Power-Transistor

OptiMOS TM 3 Power-Transistor BSC7N1NS3 G OptiMOS TM 3 Power-Transistor Features Very low gate charge for high frequency applications Optimized for dc-dc conversion N-channel, normal level Excellent gate charge x R DS(on) product (FOM)

More information

AUTOMOTIVE MOSFET. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )

AUTOMOTIVE MOSFET. C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) PD 9399A AUTOMOTIVE MOSFET Typical Applications Electric Power Steering (EPS) Antilock Braking System (ABS) Wiper Control Climate Control Power Door Benefits Advanced Process Technology Ultra Low OnResistance

More information

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPC8110

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPC8110 TPC811 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPC811 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Unit: mm Small footprint due

More information

RU6099R. N-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings TO-220

RU6099R. N-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings TO-220 N-Channel Advanced Power MOSFET Features 60V/120A, RDS (ON) =6mΩ (Typ.) @VGS=10V Pin Description Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100% avalanche

More information

STW12NK90Z. N-channel 900 V, 0.72 Ω, 11 A TO-247 Zener-protected SuperMESH Power MOSFET. Features. Application. Description

STW12NK90Z. N-channel 900 V, 0.72 Ω, 11 A TO-247 Zener-protected SuperMESH Power MOSFET. Features. Application. Description N-channel 900 V, 0.72 Ω, 11 TO-247 Zener-protected SuperMESH Power MOSFET Features Order code V DSS R DS(on) max I D Pw STW12NK90Z 900 V < 0.88 Ω 11 230 W Extremely high dv/dt capability 100% avalanche

More information

L293B L293E PUSH-PULL FOUR CHANNEL DRIVERS. OUTPUT CURRENT 1A PER CHANNEL PEAK OUTPUT CURRENT 2A PER CHANNEL (non repetitive) INHIBIT FACILITY

L293B L293E PUSH-PULL FOUR CHANNEL DRIVERS. OUTPUT CURRENT 1A PER CHANNEL PEAK OUTPUT CURRENT 2A PER CHANNEL (non repetitive) INHIBIT FACILITY L293B L293E PUSH-PULL FOUR CHANNEL DRIVERS OUTPUT CURRENT 1A PER CHANNEL PEAK OUTPUT CURRENT 2A PER CHANNEL (non repetitive) INHIBIT FACILITY. HIGH NOISE IMMUNITY SEPARATE LOGIC SUPPLY OVERTEMPERATURE

More information

Final data. Maximum Ratings Parameter Symbol Value Unit

Final data. Maximum Ratings Parameter Symbol Value Unit SPPN8C3 SPN8C3 Cool MOS Power Transistor V DS 8 V Feature R DS(on).45 Ω New revolutionary high voltage technology Ultra low gate charge I D Periodic avalanche rated Extreme dv/dt rated Ultra low effective

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) BUL312FP HIGH OLTAGE FAST-SWITCHING NPN POWER TRANSISTOR HIGH OLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION ERY HIGH SWITCHING SPEED FULLY CHARACTERIZED

More information

SMPS MOSFET. V DSS R DS(on) typ. Trr typ. I D. 600V 385mΩ 130ns 15A

SMPS MOSFET. V DSS R DS(on) typ. Trr typ. I D. 600V 385mΩ 130ns 15A Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications SMPS MOSFET PD - 9445A HEXFET Power MOSFET V DSS R DS(on) typ. Trr typ.

More information

RoHS Compliant Containing no Lead, no Bromide and no Halogen. IRF9310PbF SO8 Tube/Bulk 95 IRF9310TRPbF SO8 Tape and Reel 4000

RoHS Compliant Containing no Lead, no Bromide and no Halogen. IRF9310PbF SO8 Tube/Bulk 95 IRF9310TRPbF SO8 Tape and Reel 4000 PD 97437A IRF93PbF HEXFET Power MOSFET V DS 30 V R DS(on) max (@V GS = V) I D (@T A = 25 C) 4. mω 20 A * SO8 Applications Charge and Discharge Switch for Notebook PC Battery Application Features and Benefits

More information

DISCONTINUED. Product Marking Reel size (inches) Tape width (mm) Quantity per reel DMN4015LK3-13 N4015L ,500

DISCONTINUED. Product Marking Reel size (inches) Tape width (mm) Quantity per reel DMN4015LK3-13 N4015L ,500 40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V (BR)DSS 40V T A = 25 C 5mΩ @ = V 20.8A 20mΩ @ = 4.5V 8.0A Description and Applications This new generation MOSFET has been designed to minimize the

More information

0.185 (4.70) 0.170 (4.31) 0.055 (1.39) 0.045 (1.14) Features 0.603 (15.32) 0.573 (14.55) 0.104 (2.64) 0.094 (2.39)

0.185 (4.70) 0.170 (4.31) 0.055 (1.39) 0.045 (1.14) Features 0.603 (15.32) 0.573 (14.55) 0.104 (2.64) 0.094 (2.39) *.6 (4.6).9 (2.28).25 (5.2).9 (4.83).45 (.54) Max..4 (.4).35 (8.89).54 (3.9).42 (3.6) ia. PIN S.48 (29.6).8 (28.4) * May be notched or flat.3 (2.87).2 (2.56).635 (6.3).58 (4.73).37 (.94).26 (.66).5 (2.67).95

More information

Preliminary data. Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D. I D puls -1.

Preliminary data. Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D. I D puls -1. OptiMOS -P Small-Signal-Transistor Feature P-Channel Enhancement mode Super Logic Level (2.5 V rated) 5 C operating temperature valanche rated dv/dt rated Product Summary V DS -2 V R DS(on).2 Ω I D -.39

More information

D-Pak TO-252AA. I-Pak TO-251AA. 1

D-Pak TO-252AA. I-Pak TO-251AA.  1 l Ultra Low OnResistance l PChannel l Surface Mount (IRFR920N) l Straight Lead (IRFU920N) l Advanced Process Technology l Fast Switching G l Fully Avalanche Rated l LeadFree Description Fifth Generation

More information

PB137 POSITIVE VOLTAGE REGULATOR FOR BATTERY CHARGER

PB137 POSITIVE VOLTAGE REGULATOR FOR BATTERY CHARGER POSITIVE VOLTAGE REGULATOR FOR BATTERY CHARGER REVERSE LEAKAGE CURRENT LESS THAN 10 µa THREE TERMINAL FIXED VERSION (13.7V) OUTPUT CURRENT IN EXCESS OF 1.5A AVAILABLE IN ± 1% (AC) SELECTION AT 25 C TYPICAL

More information

STGB6NC60HD - STGB6NC60HD-1 STGF6NC60HD - STGP6NC60HD

STGB6NC60HD - STGB6NC60HD-1 STGF6NC60HD - STGP6NC60HD STGB6NC60HD - STGB6NC60HD-1 STGF6NC60HD - STGP6NC60HD N-channel 600V - 7A - I 2 PAK / D 2 PAK / TO-220 / TO-220FP Very fast PowerMESH IGBT Features Type V CES V CE(sat) max @25 C STGB6NC60HD STGB6NC60HD-1

More information

W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery e 38. V/ns T J. mj I AR

W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery e 38. V/ns T J. mj I AR PD 967 IRFB465PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D S V DSS HEXFET

More information

V DSS I D. W/ C V GS Gate-to-Source Voltage ±30 E AS (Thermally limited) mj T J Operating Junction and -55 to + 175

V DSS I D. W/ C V GS Gate-to-Source Voltage ±30 E AS (Thermally limited) mj T J Operating Junction and -55 to + 175 PD 973B IRFB432PbF Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits Benefits l Low

More information

Power MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20

Power MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20 Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) = 0.55 Q g (Max.) (nc) 63 Q gs (nc) 9.0 Q gd (nc) 3 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of

More information

SIPMOS Small-Signal-Transistor

SIPMOS Small-Signal-Transistor SIPMOS Small-Signal-Transistor Features N-channel Depletion mode dv /dt rated Product Summary V DS V R DS(on),max 3.5 Ω I DSS,min.4 A Available with V GS(th) indicator on reel Pb-free lead plating; RoHS

More information

HEXFET MOSFET TECHNOLOGY

HEXFET MOSFET TECHNOLOGY PD-90554F POWER MOSFET THRU-HOLE (TO-254) Product Summary Part Number RDS(on) ID IRFM250 0.100 Ω 27.4 IRFM250 JNTX2N7225 JNTXV2N7225 REF:MIL-PRF-19500/592 200V, N-CHNNEL HEXFET MOSFET TECHNOLOGY HEXFET

More information

Power MOSFET FEATURES. IRF9640PbF SiHF9640-E3 IRF9640 SiHF9640

Power MOSFET FEATURES. IRF9640PbF SiHF9640-E3 IRF9640 SiHF9640 Power MOSFET PRODUCT SUMMARY V DS (V) 200 R DS(on) (Ω) = 10 V 0.50 Q g (Max.) (nc) 44 Q gs (nc) 7.1 Q gd (nc) 27 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S D

More information

TSM020N03PQ56 30V N-Channel MOSFET

TSM020N03PQ56 30V N-Channel MOSFET PDFN56 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain Key Parameter Performance Parameter Value Unit V DS 30 V R DS(on) (max) V GS = 10V 2 V GS = 4.5V 3 mω Q

More information