N-Channel 60-V (D-S) MOSFET

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1 7/7, VQJ/P, BS7 -Channel 6-V (D-S) MOSFET Part umber V (BR)DSS Min (V) r DS(on) Max ( ) V GS(th) (V) I D (A) 7 V GS = V.8 to. 7 V GS = V to.5.5 VQJ 6 V GS = V.8 to.5.5 VQP V GS = V.8 to.5.5 BS7 V GS = V.8 to.5 Low On-Resistance:.5 Low Threshold:. V Low Input Capacitance: pf Fast Switching Speed: 7 ns Low Input and Output Leakage Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage Direct Logic-Level Interface: TTL/CMOS Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. Battery Operated Systems Solid-State Relays TO-6AA (TO-9) TO-6 (SOT-) S G G D S D 7 Dual-In-Line Marking Code: 7wll 7 = Part umber Code for 7 w = Week Code ll = Lot Traceability D D S S TO-9-8RM (TO-8 Lead Form) G G C C D G 5 G S 6 9 S G D D 7 8 S Plastic: Sidebraze: VQJ VQP BS7 Document umber: 76 S-79 Rev. F, 6-Jul- -

2 7/7, VQJ/P, BS7 Single Total Quad Parameter Symbol 7 7 VQJ VQP VQJ/P BS7 Unit Drain-Source Voltage V DS Gate-Source Voltage on-repetitive V GSM 5 V Gate-Source Voltage Continuous V GS Continuous Drain Current T A = 5 C I (T J = 5 C) D T A = C A Pulsed Drain Current a I DM.5.8 Power Dissipation T A = 5 C P D T A = C Thermal Resistance, Junction-to-Ambient R thja C/W Operating Junction and Storage Temperature Range otes a. Pulse width limited by maximum junction temperature. b. t p 5 s. T J, T stg 55 to 5 C W Static 7 Limits 7 Parameter Symbol Test Conditions Typ a Min Max Min Max Unit Drain-Source Breakdown Voltage V (BR)DSS V GS = V, I D = A V DS = V GS, I D = ma..8 V Gate-Threshold Voltage V GS(th) V DS = V GS, I D =.5 ma..5 V DS = V, V GS = 5 V Gate-Body Leakage I GSS V DS = V, V GS = V V DS = 8 V, V GS = V T C = 5 C Zero Gate Voltage Drain Current I DSS V DS = 6 V, V GS = V T C = 5 C 5 V DS = V, V GS =.5 V.5.75 On-State Drain Current b I D(on) V DS = 7.5 V, V GS = V.5 na A A V GS =.5 V, I D =.75 A.5 5. V GS = 5 V, I D =.5 A. 7.5 Drain-Source On-Resistance b r DS(on) T C = 5 C DS(on) V GS = V, I D =.5 A T J = 5 C. 9.5 Forward Transconductance b g fs V DS = V, I D =. A 8 Common Source Output Conductance b g os V DS = 5 V, I D =.5 A.5 Dynamic Input Capacitance C iss 6 5 Output Capacitance C V DS = 5 V, V GS = V oss 5 5 pf f = MHz Reverse Transfer Capacitance C rss 5 5 ms - Document umber: 76 S-79 Rev. F, 6-Jul-

3 7/7, VQJ/P, BS7 Switching d 7 Limits 7 Parameter Symbol Test Conditions Typ a Min Max Min Max Unit Turn-On Time t O VDD V = 5 V, R L = 5 7 Turn-Off Time t OFF I D.5 A, V GE = V, R G = 5 7 Turn-Off Time t OFF I D. A, V GE = V, R G = 5 Turn-On Time t O VDD V = V, R L = 5 7 ns Static VQJ/P Limits Parameter Symbol Test Conditions Typ a Min Max Min Max Unit Drain-Source Breakdown Voltage V (BR)DSS V GS = V, I D = A Gate-Threshold Voltage V GS(th) V DS = V GS, I D = ma V DS = V, V GS = V Gate-Body Leakage I GSS T J = 5 C 5 na GSS V DS = V, V GS = 5 V BS7 V DS = 5 V, V GS = V.5 Zero Gate Voltage Drain Current I DSS V DS = 8 V, V GS = V, T J = 5 C 5 A V DS = 6 V, V GS = V On-State Drain Current b I D(on) V DS = V, V GS = V.5 A V GS = 5 V, I D =. A 7.5 V GS = V, I D =. A. 5 Drain-Source On-Resistance b r DS(on) V GS = V, I D =. A. 5.5 T J = 5 C. 7.6 V DS = V, I D =. A Forward Transconductance b g fs V DS = V, I D =.5 A ms Common Source Output Conductance b g os V DS =5 V, I D =.5 A.5 Dynamic Input Capacitance C iss 6 6 Output Capacitance C V DS =5 V, V GS = V oss f = MHz 5 pf Reverse Transfer Capacitance C rss 5 Switching d Turn-On Time t O VDD V = 5 V, R L = 7 Turn-Off Time t OFF I D.6 A, V GE = V, R G = 5 7 Turn-Off Time t OFF I D. A, V GE = V, R G = 5 7 Turn-On Time t O VDD V = 5 V, R L = 5 7 V ns otes a. For DESIG AID OLY, not subject to production testing. VBF6 b. Pulse test: PW 8 s duty cycle %. c. This parameter not registered with JEDEC. d. Switching time is essentially independent of operating temperature. Document umber: 76 S-79 Rev. F, 6-Jul- -

4 7/7, VQJ/P, BS7. V GS =, 9, 8, 7 V Output Characteristics 6.5 V. Transfer Characteristics.8 6 V.8 T J = 55 C I D Drain Current (A) V 5 V.5 V V.5 V V.5 V I D Drain Current (A) C 5 C., V V DS Drain-to-Source Voltage (V) V GS Gate-to-Source Voltage (V) r DS(on) On-Resistance ( Ω ) On-Resistance vs. Drain Current r 5 V = V GS r V = V GS C Capacitance (pf) 6 5 V GS = V f = MHz Capacitance C iss C oss C rss I D Drain Current (A) V DS Drain-to-Source Voltage (V) Gate Charge. On-Resistance vs. Junction Temperature I D =.5 A V GS Gate-to-Source Voltage (V) 6 8 V DS = V r DS(on) On-Resistance ( Ω ) (ormalized).5..5 V GS = V, r A V GS = 5 V, r A 8 6 Q g Total Gate Charge (pc) T J Junction Temperature ( C) - Document umber: 76 S-79 Rev. F, 6-Jul-

5 7/7, VQJ/P, BS7. Source-Drain Diode Forward Voltage 6 On-Resistance vs. Gate-to-Source Voltage I S Source Current (A).. T J = 5 C T J = 5 C r DS(on) On-Resistance ( Ω ) 5 I D = 5 ma 5 ma V SD Source-to-Drain Voltage (V) V GS Gate-to-Source Voltage (V).5 Threshold Voltage.5 I D = 5 A V GS(th) Variance (V) ormalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-6AA, BS7 Only) Duty Cycle =.5 ormalized Effective Transient Thermal Impedance Single Pulse otes: P DM t t t. Duty Cycle, D = t. Per Unit Base = R thja = 56 C/W. T JM T A = P DM Z (t) thja.. K t Square Wave Pulse Duration (sec) K Document umber: 76 S-79 Rev. F, 6-Jul- -5

6 Legal Disclaimer otice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. o license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document umber: 9 Revision: 8-Jul-8

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