V DS 100 V R DS(ON) 10V 72.5 m: Q g typ. 15 nc Q sw typ. 8.3 nc R G(int) typ. 2.2 Ω T J max 175 C

Save this PDF as:
 WORD  PNG  TXT  JPG

Size: px
Start display at page:

Download "V DS 100 V R DS(ON) typ. @ 10V 72.5 m: Q g typ. 15 nc Q sw typ. 8.3 nc R G(int) typ. 2.2 Ω T J max 175 C"

Transcription

1 PD 9698A DIGITAL AUDIO MOSFET IRFB422PbF Features Key parameters optimized for ClassD audio amplifier applications Low R DSON for improved efficiency Low Q G and Q SW for better THD and improved efficiency Low Q RR for better THD and lower EMI 75 C operating junction temperature for ruggedness Can deliver up to 5W per channel into 4Ω load in halfbridge topology Key Parameters V DS V R DS(ON) V 72.5 m: Q g typ. 5 nc Q sw typ. 8.3 nc R G(int) typ. 2.2 Ω T J max 75 C D G S TO22AB Description This Digital Audio MOSFET is specifically designed for ClassD audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low onresistance per silicon area. Furthermore, Gate charge, bodydiode reverse recovery and internal Gate resistance are optimized to improve key ClassD audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET are 75 C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for ClassD audio amplifier applications. Absolute Maximum Ratings Parameter Notes through are on page 2 Units V DS DraintoSource Voltage V V GS GatetoSource Voltage ±2 I T C = 25 C Continuous Drain Current, V V 8 A I T C = C Continuous Drain Current, V V 3 I DM Pulsed Drain Current c 57 P C = 25 C Power Dissipation f 6 W P C = C Power Dissipation f Linear Derating Factor 3.4 W/ C T J Operating Junction and 55 to 75 C T STG Storage Temperature Range Soldering Temperature, for seconds (.6mm from case) Mounting torque, 632 or M3 screw 3 lbxin (.Nxm) Thermal Resistance Parameter Typ. Max. Units R θjc JunctiontoCase f 2.5 R θcs CasetoSink, Flat, Greased Surface.5 C/W R θja JunctiontoAmbient f 62 Max. 9/6/5

2 IRFB422PbF Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BV DSS DraintoSource Breakdown Voltage V V GS = V, I D = 25µA ΒV DSS / T J Breakdown Voltage Temp. Coefficient.9 V/ C Reference to 25 C, I D = ma R DS(on) Static DraintoSource OnResistance mω V GS = V, I D = 3A e V GS(th) Gate Threshold Voltage V V DS = V GS, I D = 25µA V GS(th) / T J Gate Threshold Voltage Coefficient 3 mv/ C I DSS DraintoSource Leakage Current 2 µa V DS = V, V GS = V 25 V DS = V, V GS = V, T J = 25 C I GSS GatetoSource Forward Leakage 2 na V GS = 2V GatetoSource Reverse Leakage 2 V GS = 2V g fs Forward Transconductance S V DS = 5V, I D = 3A Q g Total Gate Charge 5 23 Q gs PreVth GatetoSource Charge 3.3 V DS = 8V Q gs2 PostVth GatetoSource Charge.4 nc V GS = V Q gd GatetoDrain Charge 6.9 I D = 3A Q godr Gate Charge Overdrive 3.4 See Fig. 6 and 9 Q sw Switch Charge (Q gs2 Q gd ) 8.3 R G(int) Internal Gate Resistance 2.2 Ω t d(on) TurnOn Delay Time 7.7 V DD = 5V, V GS = Ve t r Rise Time 28 I D = 3A t d(off) TurnOff Delay Time 4 ns R G = 2.5Ω t f Fall Time 3.9 C iss Input Capacitance 55 V GS = V C oss Output Capacitance 66 pf V DS = 5V C rss Reverse Transfer Capacitance 35 ƒ =.MHz, See Fig.5 C oss Effective Output Capacitance 35 V GS = V, V DS = V to 8V L D Internal Drain Inductance 4.5 Between lead, D nh 6mm (.25in.) L S Internal Source Inductance 7.5 from package G Avalanche Characteristics Parameter E AS Single Pulse Avalanche Energyd 25 mj I AR Avalanche Currentg See Fig. 4, 5, 7a, 7b A E AR Repetitive Avalanche Energy g mj Diode Characteristics Parameter Min. Typ. Max. Units I T C = 25 C Continuous Source Current 8 (Body Diode) A I SM Pulsed Source Current 57 (Body Diode)c V SD Diode Forward Voltage.3 V t rr Reverse Recovery Time 4 62 ns Q rr Reverse Recovery Charge 69 nc Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L =.32mH, R G = 25Ω, I AS = 3A. ƒ Pulse width 4µs; duty cycle 2%. and center of die contact MOSFET symbol Conditions showing the integral reverse pn junction diode. T J = 25 C, I F = 3A di/dt = A/µs e R θ is measured at T J of approximately 9 C. Limited by Tjmax. See Figs. 4, 5, 7a, 7b for repetitive avalanche information 2 Typ. Max. Units T J = 25 C, I S = 3A, V GS = V e S

3 C, Capacitance (pf) V GS, GatetoSource Voltage (V) I D, DraintoSource Current (Α) R DS(on), DraintoSource On Resistance (Normalized) I D, DraintoSource Current (A) I D, DraintoSource Current (A) IRFB422PbF VGS TOP 5V 2V V 9.V 8.V 7.V BOTTOM 6.V VGS TOP 5V 2V V 9.V 8.V 7.V BOTTOM 6.V 6.V 6.V 6µs PULSE WIDTH Tj = 25 C V DS, DraintoSource Voltage (V) Fig. Typical Output Characteristics 6µs PULSE WIDTH Tj = 75 C V DS, DraintoSource Voltage (V) Fig 2. Typical Output Characteristics I D = 3A V GS = V. T J = 75 C 2.. T J = 25 C.5 V DS = 5V 6µs PULSE WIDTH V GS, GatetoSource Voltage (V) Fig 3. Typical Transfer Characteristics T J, Junction Temperature ( C) Fig 4. Normalized OnResistance vs. Temperature V GS = V, f = MHZ C iss = C gs C gd, C ds SHORTED C rss = C gd C oss = C ds C gd 2 6 I D = 3A V DS = 8V VDS= 5V VDS= 2V Ciss 2 Coss Crss Q V DS, DraintoSource Voltage (V) G Total Gate Charge (nc) Fig 5. Typical Capacitance vs.draintosource Voltage Fig 6. Typical Gate Charge vs.gatetosource Voltage 3

4 I D, Drain Current (A) V GS (th) Gate threshold Voltage (V) I D, DraintoSource Current (A) IRFB422PbF. OPERATION IN THIS AREA LIMITED BY R DS (on) I SD, Reverse Drain Current (A). T J = 75 C. T J = 25 C V GS = V Tc = 25 C Tj = 75 C Single Pulse µsec msec msec DC V SD, SourcetoDrain Voltage (V) V DS, DraintoSource Voltage (V) Fig 7. Typical SourceDrain Diode Forward Voltage Fig 8. Maximum Safe Operating Area I D = 25µA T J, Junction Temperature ( C) T J, Temperature ( C ) Fig 9. Maximum Drain Current vs. Case Temperature Fig. Threshold Voltage vs. Temperature Thermal Response ( Z thjc ).. D = R R 2 R 3 R R 2 R 3 τ J τ J τ τ τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci i/ri SINGLE PULSE ( THERMAL RESPONSE ) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc Tc E6 E5... t, Rectangular Pulse Duration (sec) R 4 Ri ( C/W) τi (sec) R Fig. Maximum Effective Transient Thermal Impedance, JunctiontoCase 4 τ 4 τ 4 τ C τ

5 E AR, Avalanche Energy (mj) R DS (on), Drainto Source On Resistance (Ω) Avalanche Current (A) E AS, Single Pulse Avalanche Energy (mj) IRFB422PbF.5.4 I D = 3A 2 I D TOP 3.2A 5.7A BOTTOM 3A T J = 25 C T J = 25 C V GS, GatetoSource Voltage (V) Starting T J, Junction Temperature ( C) Fig 2. OnResistance Vs. Gate Voltage Duty Cycle = Single Pulse Fig 3. Maximum Avalanche Energy Vs. Drain Current..5. Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25 C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax E6.E5.E4.E3.E2.E TOP Single Pulse BOTTOM % Duty Cycle I D = 3A Starting T J, Junction Temperature ( C) Fig 5. Maximum Avalanche Energy Vs. Temperature tav (sec) Fig 4. Typical Avalanche Current Vs.Pulsewidth Notes on Repetitive Avalanche Curves, Figures 4, 5: (For further info, see AN5 at Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long ast jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 7a, 7b. 4. P D (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (.3 factor accounts for voltage increase during avalanche). 6. I av = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed T jmax (assumed as 25 C in Figure 4, 5). t av = Average time in avalanche. D = Duty cycle in avalanche = t av f Z thjc (D, t av ) = Transient thermal resistance, see figure ) P D (ave) = /2 (.3 BV I av ) = DT/ Z thjc I av = 2DT/ [.3 BV Z th ] E AS (AR) = P D (ave) t av 5

6 IRFB422PbF D.U.T ƒ Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer Reverse Recovery Current Driver Gate Drive Period P.W. D.U.T. I SD Waveform Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt D = P.W. Period V GS =V V DD * R G dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. Device Under Test V DD ReApplied Voltage Body Diode Inductor Curent Current Forward Drop Ripple 5% I SD * V GS = 5V for Logic Level Devices Fig 6. Peak Diode Recovery dv/dt Test Circuit for NChannel HEXFET Power MOSFETs 5V tp V (BR)DSS V DS L DRIVER R G 2V V GS tp D.U.T IAS.Ω V DD A I AS Fig 7a. Unclamped Inductive Test Circuit Fig 7b. Unclamped Inductive Waveforms L D V DS V DD V DS 9% D.U.T % V GS Pulse Width < µs Duty Factor < % V GS t d(on) t r t d(off) t f Fig 8a. Switching Time Test Circuit Fig 8b. Switching Time Waveforms Vds Id Vgs K DUT L VCC Vgs(th) Qgs Qgs2 Qgd Qgodr Fig 9a. Gate Charge Test Circuit Fig 9b Gate Charge Waveform 6

7 TO22AB Package Outline (Dimensions are shown in millimeters (inches)) IRFB422PbF TO22AB Part Marking Information EXAMPLE: THIS IS AN IRF LOT CODE 789 ASSEMBLED ON WW 9, 2 IN THE ASSEMBLY LINE "C" Note: "P" in assembly line position indicates "Lead Free" INTERNATIONAL RECTIFIER LOGO AS S E MB LY LOT CODE PART NUMBER YEAR = 2 DATE CODE WEEK 9 LINE C TO22AB packages are not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 9245, USA Tel: (3) TAC Fax: (3) Visit us at for sales contact information. 9/5 7

8 Note: For the most current drawings please refer to the IR website at:

IRLR8729PbF IRLU8729PbF

IRLR8729PbF IRLU8729PbF Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits

More information

A I DM. -55 to + 175 T STG. Storage Temperature Range C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting torque, 6-32 or M3 screw

A I DM. -55 to + 175 T STG. Storage Temperature Range C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting torque, 6-32 or M3 screw IGITL UIO MOSFET P 9673 IRFB565PbF Features Key Parameters Optimized for Class udio mplifier pplications Low R SON for Improved Efficiency Low Q G and Q SW for Better TH and Improved Efficiency Low Q RR

More information

Lower Conduction Losses Low Thermal Resistance to PCB ( 0.5 C/W)

Lower Conduction Losses Low Thermal Resistance to PCB ( 0.5 C/W) PD -97428 IRFH5020PbF HEXFET Power MOSFET V DS 200 V 55 m: R DS(on) max (@V GS = V) Q g (typical) 36 nc R G (typical).9 : I D (@T c(bottom) = 25 C) 43 A PQFN 5X6 mm Applications Secondary Side Synchronous

More information

SMPS MOSFET. V DSS R DS (on) max I D

SMPS MOSFET. V DSS R DS (on) max I D Applications l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l High speed power switching SMPS MOSFET PD 93773A IRF820A HEXFET Power MOSFET V DSS R DS (on) max I D 500V 3.0Ω 2.5A Benefits

More information

IRF3710. HEXFET Power MOSFET V DSS = 100V. R DS(on) = 23mΩ I D = 57A

IRF3710. HEXFET Power MOSFET V DSS = 100V. R DS(on) = 23mΩ I D = 57A PD - 91309C IRF37 HEXFET Power MOSFET Advanced Process Technoogy Utra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Fuy Avaanche Rated G D S V DSS = 0V R DS(on) = 23mΩ

More information

Power MOSFET FEATURES. IRF520PbF SiHF520-E3 IRF520 SiHF520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20

Power MOSFET FEATURES. IRF520PbF SiHF520-E3 IRF520 SiHF520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20 Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.7 Q g (Max.) (nc) 16 Q gs (nc) 4.4 Q gd (nc) 7.7 Configuration Single TO0AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET

More information

Power MOSFET. IRF9520PbF SiHF9520-E3 IRF9520 SiHF9520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS - 100 V Gate-Source Voltage V GS ± 20

Power MOSFET. IRF9520PbF SiHF9520-E3 IRF9520 SiHF9520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS - 100 V Gate-Source Voltage V GS ± 20 Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 10 V 0.60 Q g (Max.) (nc) 18 Q gs (nc) 3.0 Q gd (nc) 9.0 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S D PChannel

More information

N-Channel 60-V (D-S), 175 C MOSFET

N-Channel 60-V (D-S), 175 C MOSFET N-Channel 6-V (D-S), 75 C MOSFET SUP/SUB7N6-4 V (BR)DSS (V) r DS(on) ( ) (A) 6.4 7 a TO-22AB D TO-263 DRAIN connected to TAB G G D S Top View SUP7N6-4 G D S Top View SUB7N6-4 S N-Channel MOSFET Parameter

More information

N-Channel 20-V (D-S) 175 C MOSFET

N-Channel 20-V (D-S) 175 C MOSFET N-Channel -V (D-S) 75 C MOSFET SUD7N-4P PRODUCT SUMMARY V DS (V) r DS(on) ( ) (A) a.37 @ V GS = V 37.6 @ V GS = 4.5 V 9 TO-5 D FEATURES TrenchFET Power MOSFET 75 C Junction Temperature PWM Optimized for

More information

UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET

UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 50N06 50 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION TO-263 TO-25 The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast

More information

STP80NF55-08 STB80NF55-08 STB80NF55-08-1 N-CHANNEL 55V - 0.0065 Ω - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET

STP80NF55-08 STB80NF55-08 STB80NF55-08-1 N-CHANNEL 55V - 0.0065 Ω - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET STP80NF55-08 STB80NF55-08 STB80NF55-08-1 N-CHANNEL 55V - 0.0065 Ω - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET TYPE V DSS R DS(on) I D STB80NF55-08/-1 STP80NF55-08 55 V 55 V

More information

STP62NS04Z N-CHANNEL CLAMPED 12.5mΩ - 62A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET

STP62NS04Z N-CHANNEL CLAMPED 12.5mΩ - 62A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET N-CHANNEL CLAMPED 12.5mΩ - 62A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET TYPE V DSS R DS(on) I D STP62NS04Z CLAMPED

More information

STW34NB20 N-CHANNEL 200V - 0.062 Ω - 34A TO-247 PowerMESH MOSFET

STW34NB20 N-CHANNEL 200V - 0.062 Ω - 34A TO-247 PowerMESH MOSFET N-CHANNEL 200V - 0.062 Ω - 34A TO-247 PowerMESH MOSFET Table 1. General Features Figure 1. Package Type V DSS R DS(on) I D STW34NB20 200 V < 0.075 Ω 34 A FEATURES SUMMARY TYPICAL R DS(on) = 0.062 Ω EXTREMELY

More information

STP10NK60Z/FP, STB10NK60Z/-1 STW10NK60Z N-CHANNEL 600V-0.65Ω-10A TO-220/FP/D 2 PAK/I 2 PAK/TO-247 Zener-Protected SuperMESH Power MOSFET

STP10NK60Z/FP, STB10NK60Z/-1 STW10NK60Z N-CHANNEL 600V-0.65Ω-10A TO-220/FP/D 2 PAK/I 2 PAK/TO-247 Zener-Protected SuperMESH Power MOSFET STP10NK60Z/FP, STB10NK60Z/-1 STW10NK60Z N-CHANNEL 600V-0.65Ω-10A TO-220/FP/D 2 PAK/I 2 PAK/TO-247 Zener-Protected SuperMESH Power MOSFET TYPE V DSS R DS(on) I D Pw STP10NK60Z STP10NK60ZFP STB10NK60Z STB10NK60Z-1

More information

STP6NK60Z - STP6NK60ZFP STB6NK60Z - STB6NK60Z-1 N-CHANNEL 600V - 1Ω - 6A TO-220/TO-220FP/D 2 PAK/I 2 PAK Zener-Protected SuperMESH Power MOSFET

STP6NK60Z - STP6NK60ZFP STB6NK60Z - STB6NK60Z-1 N-CHANNEL 600V - 1Ω - 6A TO-220/TO-220FP/D 2 PAK/I 2 PAK Zener-Protected SuperMESH Power MOSFET STP6NK60Z - STP6NK60ZFP STB6NK60Z - STB6NK60Z-1 N-CHANNEL 600V - 1Ω - 6A TO-220/TO-220FP/D 2 PAK/I 2 PAK Zener-Protected SuperMESH Power MOSFET TYPE V DSS R DS(on) I D Pw STP6NK60Z STP6NK60ZFP STB6NK60Z

More information

TSM020N03PQ56 30V N-Channel MOSFET

TSM020N03PQ56 30V N-Channel MOSFET PDFN56 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain Key Parameter Performance Parameter Value Unit V DS 30 V R DS(on) (max) V GS = 10V 2 V GS = 4.5V 3 mω Q

More information

IRF830. N - CHANNEL 500V - 1.35Ω - 4.5A - TO-220 PowerMESH MOSFET

IRF830. N - CHANNEL 500V - 1.35Ω - 4.5A - TO-220 PowerMESH MOSFET IRF830 N - CHANNEL 500V - 1.35Ω - 4.5A - TO-220 PowerMESH MOSFET TYPE V DSS R DS(on) I D IRF830 500 V < 1.5 Ω 4.5 A TYPICAL R DS(on) = 1.35 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY

More information

OptiMOS 3 Power-Transistor

OptiMOS 3 Power-Transistor Type IPD36N4L G OptiMOS 3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC ) for target applications Product Summary V DS

More information

IRFP450. N - CHANNEL 500V - 0.33Ω - 14A - TO-247 PowerMESH MOSFET

IRFP450. N - CHANNEL 500V - 0.33Ω - 14A - TO-247 PowerMESH MOSFET IRFP450 N - CHANNEL 500V - 0.33Ω - 14A - TO-247 PowerMESH MOSFET TYPE V DSS R DS(on) I D IRFP450 500 V < 0.4 Ω 14 A TYPICAL R DS(on) = 0.33 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY

More information

STB4NK60Z, STB4NK60Z-1, STD4NK60Z STD4NK60Z-1, STP4NK60Z,STP4NK60ZFP

STB4NK60Z, STB4NK60Z-1, STD4NK60Z STD4NK60Z-1, STP4NK60Z,STP4NK60ZFP STB4NK60Z, STB4NK60Z-1, STD4NK60Z STD4NK60Z-1, STP4NK60Z,STP4NK60ZFP N-channel 600 V - 1.76 Ω - 4 A SuperMESH Power MOSFET DPAK - D 2 PAK - IPAK - I 2 PAK - TO-220 - TO-220FP Features Type V DSS R DS(on)

More information

NTMS4920NR2G. Power MOSFET 30 V, 17 A, N Channel, SO 8 Features

NTMS4920NR2G. Power MOSFET 30 V, 17 A, N Channel, SO 8 Features NTMS9N Power MOSFET 3 V, 7 A, N Channel, SO Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices

More information

Symbol Parameter Value Unit V DS Drain-source Voltage (V GS =0) 50 V V DGR Drain- gate Voltage (R GS =20kΩ) 50 V

Symbol Parameter Value Unit V DS Drain-source Voltage (V GS =0) 50 V V DGR Drain- gate Voltage (R GS =20kΩ) 50 V BUZ71A N - CHANNEL 50V - 0.1Ω - 13A TO-220 STripFET POWER MOSFET TYPE V DSS R DS(on) I D BUZ71A 50 V < 0.12 Ω 13 A TYPICAL RDS(on) = 0.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT

More information

STPS40L15CW. 2 x 20 Amps SCHOTTKY RECTIFIER. Case Styles. I F(AV) = 40Amp V R = 15V. Bulletin PD-20622 rev. B 10/06. Description/ Features

STPS40L15CW. 2 x 20 Amps SCHOTTKY RECTIFIER. Case Styles. I F(AV) = 40Amp V R = 15V. Bulletin PD-20622 rev. B 10/06. Description/ Features Bulletin PD-20622 rev. B 0/06 STPS40L5CW SCHOTTKY RECTIFIER 2 x 20 Amps I F(AV) = 40Amp V R = 5V Major Ratings and Characteristics Characteristics Values Units I F(AV) Rectangular 40 A waveform V RRM 5

More information

MTD3055VT4. http://onsemi.com. MAXIMUM RATINGS (T C = 25 C unless otherwise noted) MARKING DIAGRAMS ORDERING INFORMATION. R DS(on) TYP 60 V 100 m

MTD3055VT4. http://onsemi.com. MAXIMUM RATINGS (T C = 25 C unless otherwise noted) MARKING DIAGRAMS ORDERING INFORMATION. R DS(on) TYP 60 V 100 m MTD55V Preferred Device Power MOSFET Amps, 6 Volts NChannel This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching

More information

Power MOSFET FEATURES. IRFSL11N50APbF SiHFSL11N50A-E3. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 500 V Gate-Source Voltage V GS ± 30

Power MOSFET FEATURES. IRFSL11N50APbF SiHFSL11N50A-E3. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 500 V Gate-Source Voltage V GS ± 30 Power MOFET IRFL11N50, ihfl11n50 PRODUCT UMMRY V D (V) 500 R D(on) ( ) V G = 10 V 0.55 Q g (Max.) (nc) 51 Q gs (nc) 12 Q gd (nc) 23 Configuration ingle I 2 PK (TO262) G D FETURE Dynamic dv/dt Rating Repetitive

More information

STP6N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STP6N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP6N60FI 600 V < 1.2 Ω 3.8 A TYPICAL R DS(on) =1Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT

More information

Features Benefits Description TO-247AC (Modified) Absolute Maximum Ratings Parameter Max Units

Features Benefits Description TO-247AC (Modified) Absolute Maximum Ratings Parameter Max Units Bulletin PD -.338 rev. B /4 HEXFRED TM HFA5PB6 Ultrafast, Soft Recovery Diode Features Ultrafast Recovery Ultrasoft Recovery Very Low I RRM Very Low Q rr Specified at Operating Conditions Benefits Reduced

More information

Symbol Parameter Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive

Symbol Parameter Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive BUZ11 N - CHANNEL 50V - 0.03Ω - 30A -TO-220 STripFET POWER MOSFET TYPE V DSS R DS(on) I D BUZ11 50 V < 0.04 Ω 30 A TYPICAL R DS(on) = 0.03 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT

More information

Dual P-Channel 2.5 V (G-S) MOSFET

Dual P-Channel 2.5 V (G-S) MOSFET Si593DC Dual P-Channel.5 V (G-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).55 at V GS = -.5 V ±.9 -.8 at V GS = - 3.6 V ±.7.6 at V GS = -.5 V ±. FEATURES Halogen-free According to IEC 69-- Definition

More information

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPC8110

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPC8110 TPC811 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPC811 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Unit: mm Small footprint due

More information

Features. TA=25 o C unless otherwise noted

Features. TA=25 o C unless otherwise noted NDSAN N-Channel, Logic Level, PowerTrench MOSFET June NDSAN General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor s advanced PowerTrench process that has been

More information

Dual P-Channel 40 V (D-S) MOSFET

Dual P-Channel 40 V (D-S) MOSFET Si7905DN Dual P-Channel 0 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) Q g (Typ.) - 0 0.060 at V GS = - 0 V - 6 e nc 0.089 at V GS = -.5V - 5 f FEATURES Halogen-free According to IEC 69--

More information

TN2410L, VN2406D/E, VN2410L/LS

TN2410L, VN2406D/E, VN2410L/LS TNL, VN6D/E, VNL/L N-Channel Enhancement-Mode MOFET Transistors Part Number V (BR)D Min (V) r D(on) Max ( ) V (th) (V) (A) TNL @ V =.5 V.5 to.8.8 VN6D 6 @ V = V.8 to. VN6L 6 @ V = V.8 to.8 VNL @ V = V.8

More information

AN11158. Understanding power MOSFET data sheet parameters. Document information

AN11158. Understanding power MOSFET data sheet parameters. Document information Rev. 4 4 February 2014 Application note Document information Info Keywords Abstract Content MOSFET. This application note describes the content of power MOSFET data sheet parameters Revision history Rev

More information

SSM3K335R SSM3K335R. 1. Applications. 2. Features. 3. Packaging and Pin Configuration. 2012-07-19 Rev.3.0. Silicon N-Channel MOS (U-MOS -H)

SSM3K335R SSM3K335R. 1. Applications. 2. Features. 3. Packaging and Pin Configuration. 2012-07-19 Rev.3.0. Silicon N-Channel MOS (U-MOS -H) MOSFETs Silicon N-Channel MOS (U-MOS-H) SSM3K335R SSM3K335R 1. Applications Power Management Switches DC-DC Converters 2. Features (1) 4.5-V gate drive voltage. (2) Low drain-source on-resistance : R DS(ON)

More information

Schottky Rectifier, 100 A

Schottky Rectifier, 100 A Schottky Rectifier, A VS-BGQ Cathode Anode PowerTab PRODUCT SUMMARY Package PowerTab I F(AV) A V R V V F at I F 0.82 V I RM 180 ma at 125 C T J max. 175 C Diode variation Single die E AS 9 mj FEATURES

More information

Symbol Parameter Ratings Units V DSS Drain-to-Source Voltage 80 V V GS Gate-to-Source Voltage ±20 V Drain Current - Continuous (V

Symbol Parameter Ratings Units V DSS Drain-to-Source Voltage 80 V V GS Gate-to-Source Voltage ±20 V Drain Current - Continuous (V FDBL8636_F85 N-Channel PowerTrench MOSFET 8 V, 3 A,.4 mω Features Typical R DS(on) =. mω at V GS = V, I D = 8 A Typical Q g(tot) = 72 nc at V GS = V, I D = 8 A UIS Capability RoHS Compliant Qualified to

More information

IRF5210. HEXFET Power MOSFET V DSS = -100V. R DS(on) = 0.06Ω I D = -40A

IRF5210. HEXFET Power MOSFET V DSS = -100V. R DS(on) = 0.06Ω I D = -40A dvanced Process Technoogy Utra Low OnResistance ynamic dv/dt Rating 75 C Operating Temperature Fast Switching PChanne Fuy vaanche Rated escription Fifth Generation HEXFETs from Internationa Rectifier utiize

More information

N - CHANNEL100V - 00.50Ω - 30A - TO-220/TO-220FI POWER MOSFET 30 A 16 A

N - CHANNEL100V - 00.50Ω - 30A - TO-220/TO-220FI POWER MOSFET 30 A 16 A IRF540 IRF540FI N - CHNNEL100V - 00.50Ω - 30 - TO-220/TO-220FI POWER MOSFET IRF540 IRF540FI TYPE V DSS R DS(on) I D 100 V 100 V

More information

19TQ015PbF. 19 Amp SCHOTTKY RECTIFIER. Case Styles. I F(AV) = 19Amp V R = 15V. Bulletin PD-20840 rev. B 04/06. Major Ratings and Characteristics

19TQ015PbF. 19 Amp SCHOTTKY RECTIFIER. Case Styles. I F(AV) = 19Amp V R = 15V. Bulletin PD-20840 rev. B 04/06. Major Ratings and Characteristics Bulletin PD-0840 rev. B 04/06 9TQ05PbF SCHOTTKY ECTIFIE 9 Amp I F(A) = 9Amp = 5 Major atings and Characteristics Characteristics alues Units I F(A) ectangular 9 A waveform M 5 I FSM @ tp = 5 μs sine 700

More information

IR2117(S)/IR2118(S) & (PbF)

IR2117(S)/IR2118(S) & (PbF) Data Sheet No. PD14 Rev N IR2117(S)/IR211(S) & (PbF) Features Floating channel designed for bootstrap operation Fully operational to +V Tolerant to negative transient voltage dv/dt immune Gate drive supply

More information

DISCRETE SEMICONDUCTORS DATA SHEET. BLF244 VHF power MOS transistor

DISCRETE SEMICONDUCTORS DATA SHEET. BLF244 VHF power MOS transistor DISCRETE SEMICONDUCTORS DATA SHEET September 1992 FEATURES High power gain Low noise figure Easy power control Good thermal stability Withstands full load mismatch Gold metallization ensures excellent

More information

AUTOMOTIVE GRADE. Base part number Package Type Standard Pack Orderable Part Number

AUTOMOTIVE GRADE. Base part number Package Type Standard Pack Orderable Part Number UTOMOTVE GRDE URG4P40S-E nsulated Gate Bipolar Transistor Features V ES = 600V Standard: Optimized for minimum saturation voltage and low operating frequencies ( < khz) Generation 4 GBT design provides

More information

Application Note AN-1005

Application Note AN-1005 Application Note AN-1005 Power MOSFET Avalanche Design Guidelines By Tim McDonald, Marco Soldano, Anthony Murray, Teodor Avram Table of Contents Page Table of Figures...3 Introduction...4 Overview...4

More information

High Performance Schottky Rectifier, 1 A

High Performance Schottky Rectifier, 1 A High Performance Schottky Rectifier, A VS-MQNPbF Cathode Anode DO-24AC (SMA) PRODUCT SUMMARY Package DO-24AC (SMA) I F(AV) A V R V V F at I F.78 V I RM ma at 25 C T J max. 5 C Diode variation Single die

More information

AAT4280 Slew Rate Controlled Load Switch

AAT4280 Slew Rate Controlled Load Switch General Description Features SmartSwitch The AAT4280 SmartSwitch is a P-channel MOSFET power switch designed for high-side load switching applications. The P-channel MOSFET device has a typical R DS(ON)

More information

Projet 5 - K3501 / Onduleur 12V DC - 220V AC.

Projet 5 - K3501 / Onduleur 12V DC - 220V AC. Thierry LEQUEU Septembre 26 [DATA76] Fichier : PROJETS-IUT1.DOC Projet 5 - K351 / Onduleur 12V DC - 22V AC. Projet : PROJETS-IUT1 Info : kit Velleman, [DATA12]. Révision : 24 janvier 2 5.1 Liste des documents

More information

PHOTOTRANSISTOR OPTOCOUPLERS

PHOTOTRANSISTOR OPTOCOUPLERS MCT2 MCT2E MCT20 MCT27 WHITE PACKAGE (-M SUFFIX) BLACK PACKAGE (NO -M SUFFIX) DESCRIPTION The MCT2XXX series optoisolators consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor

More information

AN-6005 Synchronous buck MOSFET loss calculations with Excel model

AN-6005 Synchronous buck MOSFET loss calculations with Excel model www.fairchildsemi.com Synchronous buck MOSFET loss calculations with Excel model Jon Klein Power Management Applications Abstract The synchronous buck circuit is in widespread use to provide point of use

More information

FDD5N50F N-Channel MOSFET, FRFET 500V, 3.5A, 1.55Ω Features

FDD5N50F N-Channel MOSFET, FRFET 500V, 3.5A, 1.55Ω Features F5N50F N-Channel MOFET, FRFET 500V, 3.5A,.55Ω Features R (on) =.25Ω ( Typ.)@ V G = 0V, I =.75A Low gate charge ( Typ. nc) Low C rss ( Typ. 5pF) Fast switching 00% avalanche tested Improved dv/dt capability

More information

DISCRETE SEMICONDUCTORS DATA SHEET M3D060. BLF177 HF/VHF power MOS transistor. Product specification Supersedes data of 1998 Jul 02.

DISCRETE SEMICONDUCTORS DATA SHEET M3D060. BLF177 HF/VHF power MOS transistor. Product specification Supersedes data of 1998 Jul 02. DISCRETE SEMICONDUCTORS DATA SHEET M3D6 Supersedes data of 1998 Jul 2 23 Jul 21 FEATURES High power gain Low intermodulation distortion Easy power control Good thermal stability Withstands full load mismatch.

More information

IR2109(4) (S) HALF-BRIDGE DRIVER. Features. Product Summary. Packages. Description. Typical Connection

IR2109(4) (S) HALF-BRIDGE DRIVER. Features. Product Summary. Packages. Description. Typical Connection Data Sheet No. PD66-T Features Floating channel designed for bootstrap operation Fully operational to +6V Tolerant to negative transient voltage dv/dt immune Gate drive supply range from to V Undervoltage

More information

FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET

FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET FQP8N80C/FQPF8N80C/FQPF8N80CYTU 800V N-Channel MOFET General escription These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, MO technology.

More information

SD4840/4841/4842/4843/4844

SD4840/4841/4842/4843/4844 CURRENT MODE PWM CONTROLLER WITH BUILT-IN HIGH VOLTAGE MOSFET DESCRIPTION SD4840/4841/4842/4843/4844 is a current mode PWM controller with low standby power and low start current for power switch. In standby

More information

BTB04-600SL STANDARD 4A TRIAC MAIN FEATURES

BTB04-600SL STANDARD 4A TRIAC MAIN FEATURES BTB-6SL STANDARD A TRIAC MAIN FEATURES A Symbol Value Unit I T(RMS) A V DRM /V RRM 6 V I GT(Q) ma G A A DESCRIPTION The BTB-6SL quadrants TRIAC is intended for general purpose applications where high surge

More information

LM78XX Series Voltage Regulators

LM78XX Series Voltage Regulators LM78XX Series Voltage Regulators General Description Connection Diagrams The LM78XX series of three terminal regulators is available with several fixed output voltages making them useful in a wide range

More information

TYPICAL APPLICATION CIRCUIT. ORDER INFORMATION SOP-EP 8 pin A703EFT (Lead Free) A703EGT (Green)

TYPICAL APPLICATION CIRCUIT. ORDER INFORMATION SOP-EP 8 pin A703EFT (Lead Free) A703EGT (Green) www.addmtek.com 2 CHANNELS 150mA HIGH VOLTAGE ADJUSTABLE CURRENT REGULATOR DESCRIPTION A703 is a high voltage, adjustable constant current driver for LED applications. Two regulated current ports are designed

More information

Designing Practical High Performance Class D Audio Amplifier. www.irf.com

Designing Practical High Performance Class D Audio Amplifier. www.irf.com Designing Practical High Performance Class D Audio Amplifier Contents Chapter 1 Chapter 2 Chapter 3 Chapter 4 Class D Amplifier Introduction Theory of class D operation, Points of design The latest Digital

More information

AUIPS71411G CURRENT SENSE HIGH SIDE SWITCH

AUIPS71411G CURRENT SENSE HIGH SIDE SWITCH February, 21st 2010 Automotive grade AUIPS71411G CURRENT SENSE HIGH SIDE SWITCH Features Suitable 24V battery operation Over current shutdown Over temperature shutdown Current sensing Active clamp Low

More information

MRF175GU MRF175GV The RF MOSFET Line 200/150W, 500MHz, 28V

MRF175GU MRF175GV The RF MOSFET Line 200/150W, 500MHz, 28V Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid

More information

Blocking Maximum rated values 1) Parameter Symbol Conditions Value Unit. f = 50 Hz, t p = 10 ms, T vj = 0 160 C f = 5 Hz, t p = 10 ms,

Blocking Maximum rated values 1) Parameter Symbol Conditions Value Unit. f = 50 Hz, t p = 10 ms, T vj = 0 160 C f = 5 Hz, t p = 10 ms, V RSM = 2800 V Rectifier Diode I F(AV)M = 6830 A I F(RMS) = 10730 A I FSM = 87 10 3 A V F0 = 0.8 V r F = 0.05 mw 5SDD 60N2800 Patented free-floating silicon technology Very low on-state losses Optimum

More information

www.jameco.com 1-800-831-4242

www.jameco.com 1-800-831-4242 Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. LF411 Low Offset, Low Drift JFET Input Operational Amplifier General Description

More information

High-speed switching diodes. Type number Package Configuration Package NXP JEITA JEDEC

High-speed switching diodes. Type number Package Configuration Package NXP JEITA JEDEC Rev. 8 18 November 2010 Product data sheet 1. Product profile 1.1 General description, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package

More information

.OPERATING SUPPLY VOLTAGE UP TO 46 V

.OPERATING SUPPLY VOLTAGE UP TO 46 V L298 DUAL FULL-BRIDGE DRIVER.OPERATING SUPPLY VOLTAGE UP TO 46 V TOTAL DC CURRENT UP TO 4 A. LOW SATURATION VOLTAGE OVERTEMPERATURE PROTECTION LOGICAL "0" INPUT VOLTAGE UP TO 1.5 V (HIGH NOISE IMMUNITY)

More information

unit : mm With heat sink (see Pd Ta characteristics)

unit : mm With heat sink (see Pd Ta characteristics) Ordering number: EN1321E Monolithic Linear IC LA4261 3.5 W 2-Channel AF Power Amplifier for Home Stereos and Music Centers Features. Minimum number of external parts required (No input capacitor, bootstrap

More information

Application Note AN-1068 reva

Application Note AN-1068 reva Application Note AN-1068 reva Considerations for Designs Using Radiation-Hardened Solid State Relays By Alan Tasker Table of Contents Introduction Page Overview...1 The Contact...1 Actuation...1 The IR

More information

CA723, CA723C. Voltage Regulators Adjustable from 2V to 37V at Output Currents Up to 150mA without External Pass Transistors. Features.

CA723, CA723C. Voltage Regulators Adjustable from 2V to 37V at Output Currents Up to 150mA without External Pass Transistors. Features. CA73, CA73C Data Sheet April 1999 File Number 788. Voltage Regulators Adjustable from V to 37V at Output Currents Up to 1mA without External Pass Transistors The CA73 and CA73C are silicon monolithic integrated

More information

DATA SHEET. TDA1518BQ 24 W BTL or 2 x 12 watt stereo car radio power amplifier INTEGRATED CIRCUITS

DATA SHEET. TDA1518BQ 24 W BTL or 2 x 12 watt stereo car radio power amplifier INTEGRATED CIRCUITS INTEGRATED CIRCUITS DATA SHEET File under Integrated Circuits, IC01 July 1994 GENERAL DESCRIPTION The is an integrated class-b output amplifier in a 13-lead single-in-line (SIL) plastic power package.

More information

700 MHz, -3 db Bandwidth; Dual SPDT Analog Switch

700 MHz, -3 db Bandwidth; Dual SPDT Analog Switch 7 MHz, -3 db Bandwidth; Dual SPDT Analog Switch DESCRIPTION is a low R ON, high bandwidth analog switch configured in dual SPDT. It achieves 5.5 Ω switch on resistance, greater than 7 MHz -3 db bandwidth

More information

Y.LIN ELECTRONICS CO.,LTD.

Y.LIN ELECTRONICS CO.,LTD. Features Current transfer ratio (CTR 50~600% at I F =5mA, V CE =5V) High isolation voltage between input and output (Viso=5000 V rms ) Creepage distance >7.62 mm Operating temperature up to +110 C Compact

More information

Surface Mount Schottky Barrier

Surface Mount Schottky Barrier FEATURES - Very low profile - typical height of 0.68mm - Low power loss, high efficiency - Ideal for automated placement - Moisture sensitivity level: level, per J-STD-020 - Compliant to RoHS Directive

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UPS61 UNISONIC TECHNOLOGIES CO., LTD HIGH PERFORMANCE CURRENT MODE POWER SWITCH DESCRIPTION The UTC UPS61 is designed to provide several special enhancements to satisfy the needs, for example, Power-Saving

More information

Features AAT4901-1 ENA ENB GND. Skyworks Solutions, Inc. Phone [781] 376-3000 Fax [781] 376-3100 sales@skyworksinc.com www.skyworksinc.

Features AAT4901-1 ENA ENB GND. Skyworks Solutions, Inc. Phone [781] 376-3000 Fax [781] 376-3100 sales@skyworksinc.com www.skyworksinc. AAT90 General Description The AAT90 FastSwitch is a member of Skyworks' Application Specific Power MOSFET (ASPM ) product family. It is a full-bridge buffered power stage operating with an input voltage

More information

J. S c h o i s wo h l

J. S c h o i s wo h l Linear Mode Operation and Safe Operating Diagram of Power-MOSFETs J. S c h o i s wo h l Application Note V0.92 June 2010 IFNA IMM SMD PMD Published by Infineon Technologies AG 81726 Munich, Germany 2011

More information

LM1084 5A Low Dropout Positive Regulators

LM1084 5A Low Dropout Positive Regulators 5A Low Dropout Positive Regulators General Description The LM1084 is a series of low dropout voltage positive regulators with a maximum dropout of 1.5 at 5A of load current. It has the same pin-out as

More information

TDA2040. 20W Hi-Fi AUDIO POWER AMPLIFIER

TDA2040. 20W Hi-Fi AUDIO POWER AMPLIFIER 20W Hi-Fi AUDIO POWER AMPLIFIER DESCRIPTION The TDA2040 is a monolithic integrated circuit in Pentawatt package, intended for use as an audio class AB amplifier. Typically it provides 22W output power

More information

BAS16 series. 1. Product profile. High-speed switching diodes. 1.1 General description. 1.2 Features and benefits. 1.

BAS16 series. 1. Product profile. High-speed switching diodes. 1.1 General description. 1.2 Features and benefits. 1. Rev. 6 4 September 04 Product data sheet. Product profile. General description, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table. Product overview Type number Package Configuration

More information

AN2703 Application note

AN2703 Application note Application note list for SCRs, TRIACs, AC switches, and DIACS Introduction All datasheet parameters are rated as minimum or maximum values, corresponding to the product parameter distribution. In each

More information

Projet 3 - GRADATOR / Gradateur à TRIAC

Projet 3 - GRADATOR / Gradateur à TRIAC Réalisation de circuits imprimés EXTRA1 1996 / 2002 Projet 3 - GRADATOR / Gradateur à TRIAC Projet : EXTRA1 Info : [DATA216] Révision : novembre 2000 Figure 3.1. Vue du circuit imprimé (images-composants\xx.jpg).

More information

Preliminary Datasheet

Preliminary Datasheet Features Macroblock Preliminary Datasheet 1.2A Constant Output Current 93% Efficiency @ input voltage 13V, 350mA, 9~36V Input Voltage Range Hysteretic PFM Improves Efficiency at Light Loads Settable Output

More information

HUF75344G3, HUF75344P3, HUF75344S3S

HUF75344G3, HUF75344P3, HUF75344S3S HUF7344G3, HUF7344P3, HUF7344S3S Data Sheet December 24 7A, V,. Ohm, NChannel UltraFET Power MOSFETs These NChannel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process

More information

Thyristor/Diode Modules M## 501 MCC MCD MDC

Thyristor/Diode Modules M## 501 MCC MCD MDC Date: 29.9.214 Data Sheet Issue: 3 Absolute Maximum Ratings Thyristor/Diode Modules M## 51 VRRM VDRM [V] MCC MCD MDC 12 51-12io2 51-12io2 51-12io2 14 51-14io2 51-14io2 51-14io2 16 51-16io2 51-16io2 51-16io2

More information

LM381 LM381A Low Noise Dual Preamplifier

LM381 LM381A Low Noise Dual Preamplifier LM381 LM381A Low Noise Dual Preamplifier General Description The LM381 LM381A is a dual preamplifier for the amplification of low level signals in applications requiring optimum noise performance Each

More information

High-Bandwidth, Low Voltage, Dual SPDT Analog Switches

High-Bandwidth, Low Voltage, Dual SPDT Analog Switches DG, DG High-Bandwidth, Low Voltage, Dual SPDT Analog Switches DESCRIPTION The DG/DG are monolithic CMOS dual single-pole/double-throw (SPDT) analog switchs. They are specifically designed for low-voltage,

More information

AN11243. Failure signature of electrical overstress on power MOSFETs. Document information

AN11243. Failure signature of electrical overstress on power MOSFETs. Document information Rev. 01 29 October 2012 Application note Document information Info Keywords Abstract Content Power MOSFETs, Electrical Overstress (EOS), Unclamped Inductive Switching (UIS) When Power MOSFETs fail, there

More information

VN03. ISO high side smart power solid state relay PENTAWATT. Features. Description. www.tvsat.com.pl

VN03. ISO high side smart power solid state relay PENTAWATT. Features. Description. www.tvsat.com.pl ISO high side smart power solid state relay Features Type V DSS R DS(on) I n (1) Maximum continuous output current (a) : 4A @ Tc= 25 C 5V logic level compatible input Thermal shutdown Under voltage protection

More information

LC03-6. Low Capacitance TVS for High-Speed Data Interfaces. Features. Description. Mechanical Characteristics. Applications

LC03-6. Low Capacitance TVS for High-Speed Data Interfaces. Features. Description. Mechanical Characteristics. Applications Description The LC0- transient voltage suppressor is designed to protect components which are connected to high speed telecommunication lines from voltage surges caused by lightning, electrostatic discharge

More information

ASSR-1410, ASSR-1411 and ASSR-1420 General Purpose, Form A, Solid State Relay (Photo MOSFET) (60V/0.6A/1Ω) Features. Applications. Truth Table.

ASSR-1410, ASSR-1411 and ASSR-1420 General Purpose, Form A, Solid State Relay (Photo MOSFET) (60V/0.6A/1Ω) Features. Applications. Truth Table. ASSR-, ASSR- and ASSR- General Purpose, Form A, Solid State Relay (Photo MOSFET) (V/.A/Ω) Data Sheet Lead (Pb) Free RoHS fully compliant RoHS fully compliant options available; -xxxe denotes a lead-free

More information

IR2233/IR2235(J&S) & (PbF)

IR2233/IR2235(J&S) & (PbF) Features Floating channel designed for bootstrap operation Fully operational to +6V or+v Tolerant to negative transient voltage dv/dt immune Gate drive supply range from 1V/V to 2V DC and up to 25V for

More information

LM134-LM234-LM334. Three terminal adjustable current sources. Features. Description

LM134-LM234-LM334. Three terminal adjustable current sources. Features. Description Three terminal adjustable current sources Features Operates from 1V to 40V 0.02%/V current regulation Programmable from 1µA to 10mA ±3% initial accuracy Description The LM134/LM234/LM334 are 3-terminal

More information

2N3906. General Purpose Transistors. PNP Silicon. Pb Free Packages are Available* http://onsemi.com. Features MAXIMUM RATINGS

2N3906. General Purpose Transistors. PNP Silicon. Pb Free Packages are Available* http://onsemi.com. Features MAXIMUM RATINGS 2N396 General Purpose Transistors PNP Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Collector Base Voltage V

More information

DG2515, DG2516. 3-Ω, 235-MHz Bandwidth, Dual SPDT Analog Switch. Vishay Siliconix. Not for New Design. RoHS COMPLIANT DESCRIPTION FEATURES BENEFITS

DG2515, DG2516. 3-Ω, 235-MHz Bandwidth, Dual SPDT Analog Switch. Vishay Siliconix. Not for New Design. RoHS COMPLIANT DESCRIPTION FEATURES BENEFITS Not for New Design DG, DG -Ω, -MHz Bandwidth, Dual SPDT Analog Switch DESCRIPTION The DG, DG are low-voltage dual single-pole/ double-throw monolithic CMOS analog switches. Designed to operate from.8 V

More information

TIC225 SERIES SILICON TRIACS

TIC225 SERIES SILICON TRIACS Copyright 200, Power Innovations Limited, UK JULY 975 - REVISED MARCH 200 Sensitive Gate Triacs 8 A RMS, 70 A Peak Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max I GT of 5 ma (Quadrant ) MT

More information

MM74HC14 Hex Inverting Schmitt Trigger

MM74HC14 Hex Inverting Schmitt Trigger MM74HC14 Hex Inverting Schmitt Trigger General Description The MM74HC14 utilizes advanced silicon-gate CMOS technology to achieve the low power dissipation and high noise immunity of standard CMOS, as

More information

CD4511BM CD4511BC BCD-to-7 Segment Latch Decoder Driver

CD4511BM CD4511BC BCD-to-7 Segment Latch Decoder Driver CD4511BM CD4511BC BCD-to-7 Segment Latch Decoder Driver General Description The CD4511BM CD4511BC BCD-to-seven segment latch decoder driver is constructed with complementary MOS (CMOS) enhancement mode

More information

MM74C150 MM82C19 16-Line to 1-Line Multiplexer 3-STATE 16-Line to 1-Line Multiplexer

MM74C150 MM82C19 16-Line to 1-Line Multiplexer 3-STATE 16-Line to 1-Line Multiplexer MM74C150 MM82C19 16-Line to 1-Line Multiplexer 3-STATE 16-Line to 1-Line Multiplexer General Description The MM74C150 and MM82C19 multiplex 16 digital lines to 1 output. A 4-bit address code determines

More information

User Guide #0602. User Guide for IRDC3624 Evaluation Board using IRF8910 SO-8, dual MOSFET and 2x 22µF ceramic output capacitors.

User Guide #0602. User Guide for IRDC3624 Evaluation Board using IRF8910 SO-8, dual MOSFET and 2x 22µF ceramic output capacitors. User Guide #0602 User Guide for IRDC3624 Evaluation Board using IRF8910 SO-8, dual MOSFET and 2x 22µF ceramic output capacitors By Parviz Parto Table of Contents Page Description...1 Connections...1-2

More information

(250 Volts Peak) SEMICONDUCTOR TECHNICAL DATA

(250 Volts Peak) SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by MOC00/D (0 Volts Peak) The MOC00 Series consists of gallium arsenide infrared emitting diodes, optically coupled to silicon bilateral switch and are

More information

2N3903, 2N3904. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features. http://onsemi.com MAXIMUM RATINGS

2N3903, 2N3904. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features. http://onsemi.com MAXIMUM RATINGS N393, General Purpose Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 4 Vdc CollectorBase Voltage V CBO 6 Vdc EmitterBase

More information

Application Note AN- 1118

Application Note AN- 1118 Application Note AN- 111 IR331x : urrent Sensing High Side Switch P3 By David Jacquinod Table of ontents Page Introduction... 2 Inner Architecture... 2 Reverse Battery Protection... 2 Wait function...

More information