N-Channel Enhancement-Mode Vertical DMOS FET
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- Mervin Ryan
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1 TN1 N-Channel Enhancement-Mode Vertical DMOS FET Features Low threshold -.V max. High input impedance Low input capacitance - 1pF typical Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage Complementary N- and P-channel devices pplications Logic level interfaces - ideal for TTL and CMOS Solid state relays Battery operated systems Photo voltaic drives nalog switches General purpose line drivers Telecom switches General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Ordering Information Device Package Option TO-9 /BV DGS (V) (max) (Ω) TN1 TN1N-G G indicates package is RoHS compliant ( Green ) Pin Configurations (ON) (min) () (th) (max) (V) bsolute Maximum Ratings Parameter Value Drain-to-source voltage Drain-to-gate voltage BV DGS Gate-to-source voltage ±V Operating and storage temperature -55 O C to +15 O C Soldering temperature* O C bsolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. ll voltages are referenced to device ground. * Distance of 1.mm from case for 1 seconds. Product Marking T N 1 Y Y W W DRIN SOURCE GTE TO-9 (N) YY = Year Sealed WW = Week Sealed = Green Packaging TO-9 (N) 15 Bordeaux Drive, Sunnyvale, C 99 Tel: --
2 TN1 Thermal Characteristics Electrical Characteristics (T = 5 O C unless otherwise specified) Sym Parameter Min Typ Max Units Conditions Drain-to-source breakdown voltage V = V, = 1.m (th) Gate threshold voltage. -. V = V DS, = 1.m Δ(th) Change in (th) with temperature mv/ O C = V DS, = 1.m I GSS Gate body leakage n = ± V, V DS = V SS (ON) Zero gate voltage drain current On-state drain current Static drain-to-source on-state resistance µ = V, V DS = Max Rating m V DS =. Max Rating, = V, T = 15 C V GS = 5.V, V DS = 5V..7 - = 1V, V DS = 5V =.V, = 5m Ω = 5.V, = 75m = 1V, = 75m Δ Change in with temperature %/ O C = 1V, = 75m G FS Forward transductance 5 - mmho V DS = 5V, = 1. C ISS Input capacitance C OSS Common source output capacitance C RSS Reverse transfer capacitance t d(on) Turn-on delay time - - t r Rise time t d(off) Turn-off delay time Notes: 1.. Package (continuous) (m) Notes: (continuous) is limited by max rated T j. (pulsed) () Power C = 5 O C (W) t f Fall time θ jc ( O C/W) pf ns = V, V DS = 5V, f = 1.MHz = 5V, = 1.5, R GEN = 5Ω V SD Diode forward voltage drop V = V, I SD = 1.5 t rr Reverse recovery time - - ns = V, I SD = 1.5 ll D.C. parameters 1% tested at 5 O C unless otherwise stated. (Pulse test: µs pulse, % duty cycle.) ll.c. parameters sample tested. θ ja ( O C/W) TO R (m) RM () Switching Waveforms and Test Circuit INPUT 1V V 1% 9% PULSE GENERTOR R L OUTPUT t (ON) t (OFF) R GEN t d(on) t r t d(off) t F OUTPUT 1% 1% INPUT D.U.T. V 9% 9% 15 Bordeaux Drive, Sunnyvale, C 99 Tel: --
3 TN1 Typical Performance Curves Output Characteristics Saturation Characteristics 1 1 = 1V 9V V 7V V = 1V 9V V 7V V 5V V 5V V V Transconductance vs. Drain Current Power Dissipation vs. Case Temperature 1.. V DS = 5V. G F S (siemens ).. T = -55 C T = 5 C T = 15 C P D (watts ) 1. TO (amperes) T C ( C) Maximum Rated Safe Operating rea Thermal Response Characteristics TO-9 (DC) T C = 5 C (normalized) Resistance Thermal t p (seconds) TO-9 P D = 1W T C = 5 C 15 Bordeaux Drive, Sunnyvale, C 99 Tel: --
4 TN1 Typical Performance Curves (cont.) BVDSS Variation with Temperature On-Resistance vs. Drain Current = 5V D SS (normalized ) BV 1. (ohms) = 1V T j ( O C) 1 ID (amperes) Transfer Characteristics V(th) and RDS Variation with Temperature 1. V DS = 5V T = -55 O C 15 O C 5 O C (th) (normalized ) V (th)@ 1m 1V,.75 DS (normalized ). 1 (volts) T j ( O C) Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics 1 15 f = 1MHz V DS = 1V C (picofarads) 1 C ISS V G S (volts ) 17 pf V DS = V 5 C OSS C RSS 1 95 pf Q G (nanocoulombs) 15 Bordeaux Drive, Sunnyvale, C 99 Tel: --
5 TN1 -Lead TO-9 Package Outline (N) D Seating Plane 1 L b e1 e Front View c Side View E1 1 E Bottom View Dimensions (inches) Symbol b c D E E1 e e1 L MIN NOM MX * JEDEC Registration TO-9. * This dimension is not specified in the original JEDEC drawing. The value listed is for reference only. This dimension is a non-jedec dimension. Drawings not to scale. Supertex Doc.#: DSPD-TO9N, Version D. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate product liability indemnification insurance agreement. Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. website: http// ll rights reserved. Unauthorized use or reproduction is prohibited. Doc.# DSFP-TN Bordeaux Drive, Sunnyvale, C 99 Tel: --
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