A I DM. -55 to T STG. Storage Temperature Range C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting torque, 6-32 or M3 screw

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1 IGITL UIO MOSFET P 9673 IRFB565PbF Features Key Parameters Optimized for Class udio mplifier pplications Low R SON for Improved Efficiency Low Q G and Q SW for Better TH and Improved Efficiency Low Q RR for Better TH and Lower EMI 75 C Operating Junction Temperature for Ruggedness Can eliver up to 3W per Channel into 4Ω Load in HalfBridge Configuration mplifier Key Parameters V S 5 V R S(ON) V 32 m: Q g typ. 26 nc Q sw typ. nc R G(int) typ. 2.7 Ω T J max 75 C G S TO22B S G G S Gate rain Source escription This igital udio MOSFET is specifically designed for Class audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low onresistance per silicon area. Furthermore, Gate charge, bodydiode reverse recovery and internal Gate resistance are optimized to improve key Class audio amplifier performance factors such as efficiency, TH and EMI. dditional features of this MOSFET are 75 C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for Class audio amplifier applications. bsolute Maximum Ratings Parameter Max. Units V S raintosource Voltage 5 GatetoSource Voltage ±2 V T C = 25 C Continuous rain V 35 T C = C Continuous rain V 25 I M Pulsed rain Current c 4 C = 25 C Power issipation f 44 C = C Power issipation f 72 W Linear erating Factor.96 W/ C T J Operating Junction and 55 to 75 T STG Storage Temperature Range C Soldering Temperature, for seconds 3 (.6mm from case) Mounting torque, 632 or M3 screw lbxin (.Nxm) Thermal Resistance Parameter Typ. Max. Units R θjc JunctiontoCase f.45 R θcs CasetoSink, Flat, Greased Surface.5 C/W R θj Junctiontombient f 62 Notes through are on page 2 9/5/8

2 IRFB565PbF Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units BV SS raintosource Breakdown Voltage 5 V ΒV SS / T J Breakdown Voltage Temp. Coefficient 8 V/ C Reference to 25 C, I = m R S(on) Static raintosource OnResistance mω = V, I = 2 e (th) Gate Threshold Voltage V V S =, I = µ (th) / T J Gate Threshold Voltage Coefficient 3 mv/ C I SS raintosource Leakage Current 2 V S = 5V, = V µ 25 V S = 5V, = V, T J = 25 C I GSS GatetoSource Forward Leakage = 2V n GatetoSource Reverse Leakage = 2V g fs Forward Transconductance 35 S V S = 5V, I = 2 Q g Total Gate Charge 26 4 Q gs PreVth GatetoSource Charge 6.4 V S =75V Q gs2 PostVth GatetoSource Charge 2.2 = V nc Q gd Gatetorain Charge 9. I = 2 Q godr Gate Charge Overdrive 8.9 See Fig. 6 and 9 Q sw Switch Charge (Q gs2 Q gd ) R G(int) Internal Gate Resistance Ω t d(on) TurnOn elay Time 8.9 V = 75V, = Ve t r Rise Time 23. I = 2 ns t d(off) TurnOff elay Time 7.2 R G = 2.4Ω t f Fall Time 3. C iss Input Capacitance 75 = V C oss Output Capacitance 55 V S = 5V pf C rss Reverse Transfer Capacitance 4 ƒ =.MHz, See Fig.5 C oss Effective Output Capacitance 75 = V, V S = V to 2V L Internal rain Inductance Between lead, 4.5 6mm (.25in.) nh G L S Internal Source Inductance from package 7.5 S and center of die contact valanche Characteristics Parameter Typ. Max. Units E S Single Pulse valanche Energyd 9 mj I R valanche Currentg See Fig. 4, 5, 7a, 7b E R Repetitive valanche Energy g mj iode Characteristics Parameter Min. Typ. Max. Units I T C = 25 C Continuous Source Current (Body iode) 35 I SM Pulsed Source Current (Body iode)c 4 V S iode Forward Voltage.3 V t rr Reverse Recovery Time 8 2 ns Q rr Reverse Recovery Charge nc Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L =.5mH, R G = 25Ω, I S = 2. ƒ Pulse width 4µs; duty cycle 2%. Conditions = V, I = 25µ Conditions MOSFET symbol showing the integral reverse pn junction diode. T J = 25 C, I S = 2, = V e T J = 25 C, I F = 2, V R =2V di/dt = /µs e R θ is measured at T J of approximately 9 C. Limited by Tjmax. See Figs. 4, 5, 7a, 7b for repetitive avalanche information 2

3 C, Capacitance (pf), GatetoSource Voltage (V) I, raintosource Current () R S(on), raintosource On Resistance (Normalized) I, raintosource Current () I, raintosource Current () IRFB565PbF VGS TOP 5V 2V V 8.V 7.V 6.V 5.5V BOTTOM 5.V VGS TOP 5V 2V V 8.V 7.V 6.V 5.5V BOTTOM 5.V 5.V 5.V 6µs PULSE WITH Tj = 25 C. V S, raintosource Voltage (V) 6µs PULSE WITH Tj = 75 C V S, raintosource Voltage (V) Fig. Typical Output Characteristics T J = 75 C Fig 2. Typical Output Characteristics I = 2 = V T J = 25 C 2..5 V S = 5V 6µs PULSE WITH , GatetoSource Voltage (V) Fig 3. Typical Transfer Characteristics T J, Junction Temperature ( C) Fig 4. Normalized OnResistance vs. Temperature = V, f = MHZ C iss = C gs C gd, C ds SHORTE C rss = C gd C oss = C ds C gd I = 2 V S = 2V V S = 75V VS= 3V C iss 8. C oss 6. C rss V S, raintosource Voltage (V) Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance vs.raintosource Voltage Fig 6. Typical Gate Charge vs.gatetosource Voltage 3

4 (th), I, rain Current () Gate threshold Voltage (V) I S, Reverse rain Current () I, raintosource Current () IRFB565PbF OPERTION IN THIS RE LIMITE BY R S (on) T J = 75 C T J = 25 C = V V S, Sourcetorain Voltage (V) Fig 7. Typical Sourcerain iode Forward Voltage 4 6. Tc = 25 C Tj = 75 C Single Pulse msec msec C µsec V S, raintosource Voltage (V) Fig 8. Maximum Safe Operating rea T C, Case Temperature ( C) Fig 9. Maximum rain Current vs. Case Temperature I = µ I = 25u I =.m I = T J, Temperature ( C ) Fig. Threshold Voltage vs. Temperature Thermal Response ( Z thjc ) C/W = SINGLE PULSE ( THERML RESPONSE ) R R R 2 R 2 R 3 R 3 τ J τ J τ τ τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci i/ri Notes:. uty Factor = t/t2 2. Peak Tj = P dm x Zthjc Tc. E6 E5... t, Rectangular Pulse uration (sec) Fig. Maximum Effective Transient Thermal Impedance, JunctiontoCase 4 R 4 R 4 τ 4 τ 4 τ C τ Ri ( C/W) τi (sec)

5 E R, valanche Energy (mj) R S(on), rainto Source On Resistance ( Ω) valanche Current () E S, Single Pulse valanche Energy (mj) IRFB565PbF I = I TOP BOTTOM T J = 25 C.5 T J = 25 C , Gate to Source Voltage (V) Fig 2. OnResistance Vs. Gate Voltage uty Cycle = Single Pulse Starting T J, Junction Temperature ( C) Fig 3. Maximum valanche Energy Vs. rain Current llowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 5 C and Tstart =25 C (Single Pulse)..5. llowed avalanche Current vs avalanche pulsewidth, tav, assuming Τ j = 25 C and Tstart = 5 C..E6.E5.E4.E3.E2.E tav (sec) Fig 5. Maximum valanche Energy Vs. Temperature Fig 4. Typical valanche Current Vs.Pulsewidth TOP Single Pulse BOTTOM.% uty Cycle I = Starting T J, Junction Temperature ( C) Notes on Repetitive valanche Curves, Figures 4, 5: (For further info, see N5 at valanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in valanche is allowed as long as neither Tjmax nor Iav (max) is exceeded 3. Equation below based on circuit and waveforms shown in Figures 7a, 7b. 4. P (ave) = verage power dissipation per single avalanche pulse. 5. B V = Rated breakdown voltage (.3 factor accounts for voltage increase during avalanche). 6. I av = llowable avalanche current. 7. T = llowable rise in junction temperature, not to exceed T jmax (assumed as 25 C in Figure 4, 5). t av = verage time in avalanche. = uty cycle in avalanche = t av f Z thjc (, t av ) = Transient thermal resistance, see figure ) P (ave) = /2 (.3 BV I av ) = T/ Z thjc I av = 2T/ [.3 BV Z th ] E S (R) = P (ave) t av 5

6 IRFB565PbF.U.T ƒ Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer Reverse Recovery Current river Gate rive Period P.W..U.T. I S Waveform Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt = P.W. Period =V V * R G dv/dt controlled by RG river same type as.u.t. I S controlled by uty Factor "".U.T. evice Under Test V Repplied Voltage Body iode Inductor Current Curent Forward rop Ripple 5% I S * = 5V for Logic Level evices Fig 6. Peak iode Recovery dv/dt Test Circuit for NChannel HEXFET Power MOSFETs 5V tp V (BR)SS V S L RIVER R G 2V tp.u.t IS.Ω V I S Fig 7a. Unclamped Inductive Test Circuit Fig 7b. Unclamped Inductive Waveforms V S R V S.U.T. 9% R G V VV GS Pulse Width µs uty Factor % % t d(on) t r t d(off) t f Fig 8a. Switching Time Test Circuit Fig 8b. Switching Time Waveforms Current Regulator Same Type as.u.t. Vds Id 5KΩ Vgs 2V.2µF.3µF.U.T. V S Vgs(th) 3m I G I Current Sampling Resistors Qgs Qgs2 Qgd Qgodr Fig 9a. Gate Charge Test Circuit Fig 9b. Gate Charge Waveform 6

7 IRFB565PbF TO22B Package Outline imensions are shown in millimeters (inches) TO22B Part Marking Information (;$3/( 7,6,6$,5) /27&2'( $66(%/('2::,7($66(%/</,(& RWH3LQVVHPEO\OLQHSRVLWLRQ LQGLFWHV/HG)UHH,7(5$7,2$/ 5(&7,),(5 /2*2 $66(%/< /27&2'( 3$578%(5 '$7(&2'( <($5 :((. /,(& TO22B packages are not recommended for Surface Mount pplication. Note: For the most current drawing please refer to IR website at ata and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR s Web site. IR WORL HEQURTERS: 233 Kansas St., El Segundo, California 9245, US Tel: (3) TC Fax: (3) Visit us at for sales contact information. 9/28 7