2N6056. NPN Darlington Silicon Power Transistor DARLINGTON 8 AMPERE SILICON POWER TRANSISTOR 80 VOLTS, 100 WATTS

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1 NPN Darlington Silicon Power Transistor The NPN Darlington silicon power transistor is designed for general purpose amplifier and low frequency switching applications. High DC Current Gain h FE = 3000 I C = 4.0 Adc Collector Emitter Sustaining 100 ma V CEO(sus) = 80 Vdc (Min) Low Collector Emitter Saturation Voltage V CE(sat) = Vdc I C = 4.0 Adc = 3.0 Vdc I C = 8.0 Adc Monolithic Construction with Built In Base Emitter Shunt Resistors MAXIMUM RATINGS (1) Rating Symbol Max Unit Collector Emitter Voltage V CEO 80 Vdc Collector Base Voltage V CB 80 Vdc Emitter Base Voltage V EB 5.0 Vdc Collector Current Continuous I C 8.0 Adc Peak 16 Base Current I B 120 madc Total Device T C = 25 C P D 100 Watts Derate above 25 C 71 W/ C Operating and Storage Junction Temperature T J, T stg 65 to C Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R θjc 1.75 C/W (1) Indicates JEDEC Registered Data 100 DARLINGTON 8 AMPERE SILICON POWER TRANSISTOR 80 VOLTS, 100 WATTS CASE 1 07 TO 204AA (TO 3) PD, POWER DISSIPATION (WATTS) T C, TEMPERATURE ( C) Figure 1. Power Derating Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2006 August, 2006 Rev. 3 1 Publication Order Number: 2N6056/D

2 *ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Sustaining Voltage (2) V CEO(sus) Vdc ÎÎ C = 100 madc, I B = 0) ÎÎ 80 ÎÎ Collector Cutoff Current I CEO madc (V ÎÎ CE = 40 Vdc, I B = 0) ÎÎ Collector Cutoff Current I ÎÎ (V CE = Rated V CB, V BE(off) CEX madc = 1.5 Vdc) ÎÎ (V CE = Rated V CB, V BE(off) = 1.5 Vdc, T C = 150 C) ÎÎ 5.0 ÎÎ Emitter Cutoff Current I EBO madc ÎÎ (V BE = 5.0 Vdc, I C = 0) ÎÎ ON CHARACTERISTICS (2) DC Current Gain h FE ÎÎ C = 4.0 Adc, V CE = 3.0 Vdc) C = 8.0 Adc, V CE = 3.0 Vdc) ÎÎ 100 ÎÎ Collector Emitter Saturation Voltage V CE(sat) Vdc ÎÎ C = 4.0 Adc, I B = 16 madc) C = 8.0 Adc, I B ÎÎ = 80 madc) 3.0 ÎÎ Base Emitter Saturation Voltage V ÎÎ C = 8.0 Adc, I B = 80 madc) BE(sat) 4.0 Vdc Î ÎÎ Base Emitter On Voltage V BE(on) 2.8 Vdc ÎÎ C = 4.0 Adc, V CE = 3.0 Vdc) ÎÎ DYNAMIC CHARACTERISTICS Magnitude of Common Emitter Small Signal Short Circuit Current Transfer Ratio h C = 3.0 Adc, V CE fe 4.0 = 3.0 Vdc, f = MHz) ÎÎ Output Capacitance C ob ÎÎ (V CB = 10 Vdc, I E = 0, f = MHz) ÎÎ 200 pf ÎÎ Small Signal Current Gain h fe 300 ÎÎ C = 3.0 Adc, V CE = 3.0 Vdc, f = khz) ÎÎ *Indicates JEDEC Registered Data. (2) Pulse Test: Pulse Width = 300 μs, Duty Cycle = % 2

3 R B & R C VARIED TO OBTAIN DESIRED CURRENT LEVELS D 1 MUST BE FAST RECOVERY TYPE, e.g., 1N5825 USED ABOVE I B 100 ma MSD6100 USED BELOW I B 100 ma V 2 approx + 12 V 0 V 1 approx 8.0 V t r, t f 10 ns DUTY CYCLE = % 25 μs 51 Figure 2. Switching Times Test Circuit R B D V R C TUT 8.0 k 50 for t d and t r, D 1 is disconnected and V 2 = 0 V CC 30 V SCOPE For NPN test circuit reverse diode, polarities and input pulses. t, TIME ( s) μ t s V CC = 30 V I C /I B = 250 I B1 = I B2 t V BE(off) = Figure 3. Switching Times t f t r 0.7 D = r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) SINGLE PULSE R θjc (t) = r(t) R θjc R θjc = 1.75 C/W 2N6056 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t 1 T J(pk) T C = P (pk) θ JC (t) P (pk) t 1 t 2 DUTY CYCLE, D = t 1 /t t, TIME (ms) Figure 4. Thermal Response 3

4 ACTIVE REGION SAFE OPERATING AREA T J = 200 C ms ms 5.0 ms SECOND BREAKDOWN LIMIT BONDING WIRE LIMIT THERMALLY T C = 25 C (SINGLE PULSE) V CE, COLLECTOR EMITTER VOLTAGE (VOLTS) dc Figure 5. Safe Operating Area ms There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C V CE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 200 C; T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 200 C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. hfe, SMALL SIGNAL CURRENT GAIN 10, T C = 25 C V CE = 3.0 Vdc I C = 3.0 Adc f, FREQUENCY (khz) V R, REVERSE VOLTAGE (VOLTS) Figure 6. Small Signal Current Gain C, CAPACITANCE (pf) C ib C ob Figure 7. Capacitance 4

5 hfe, DC CURRENT GAIN 20,000 10, T J = 150 C 25 C 55 C V CE = 3.0 V VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) I C = A 4.0 A 6.0 A I B, BASE CURRENT (ma) Figure 8. DC Current Gain Figure 9. Collector Saturation Region V, VOLTAGE (VOLTS) 1.5 V V CE = 3.0 V V I C /I B = 250 V I C /I B = Figure 10. On Voltage 5

6 PACKAGE DIMENSIONS CASE 1 07 TO 204AA (TO 3) ISSUE Z V H E 2 1 A N U C T SEATING PLANE D 2 PL K 3 (0.005) M T Q M Y M L G Y Q 3 (0.005) M T B Y M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO 204AA OUTLINE SHALL APPLY. INCHES MILLIMETERS DIM MIN MAX MIN MAX A REF REF B C D E G BSC BSC H 15 BSC 5.46 BSC K L BSC BSC N Q U BSC 35 BSC V STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative 2N6056/D

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