N-Channel Logic Level Enhancement Mode Field Effect Transistor. Features. TA=25 o C unless otherwise noted
|
|
- Oliver Glenn
- 7 years ago
- Views:
Transcription
1 October 5 BSS38 BSS38 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild s proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.these products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Features. A, 5 V. R DS(ON) = V GS = V R DS(ON) = V GS = 4.5 V High density cell design for extremely low R DS(ON) Rugged and Reliable Compact industry standard SOT-3 surface mount package D D S SOT-3 G G S Absolute Maximum Ratings TA=5 o C unless otherwise noted Symbol Parameter Ratings Units V DSS Drain-Source Voltage 5 V V GSS Gate-Source Voltage ± V I D Drain Current Continuous (Note ). A Pulsed.88 P D Maximum Power Dissipation (Note ).36 W Derate Above 5 C.8 mw/ C T J, T STG Operating and Storage Junction Temperature Range 55 to +5 C T L Maximum Lead Temperature for Soldering Purposes, /6 from Case for Seconds 3 C Thermal Characteristics R θja Thermal Resistance, Junction-to-Ambient (Note ) 35 C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity SS BSS38 7 8mm 3 units 5 Fairchild Semiconductor Corporation BSS38 Rev C(W)
2 Electrical Characteristics T A = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV DSS Drain Source Breakdown Voltage V GS = V, I D = 5 µa 5 V BVDSS T J Breakdown Voltage Temperature Coefficient I D = 5 µa,referenced to 5 C I DSS Zero Gate Voltage Drain Current V DS = 5 V, V GS = V.5 µa V DS = 5 V, V GS = V T J = 5 C 5 µa V DS = 3 V, V GS = V na I GSS Gate Body Leakage. V GS = ± V, V DS = V ± na 7 mv/ C BSS38 On Characteristics (Note ) V GS(th) Gate Threshold Voltage V DS = V GS, I D = ma V VGS(th) Gate Threshold Voltage I D = ma,referenced to 5 C mv/ C T J Temperature Coefficient R DS(on) Static Drain Source V GS = V, I D =. A Ω On Resistance V GS = 4.5 V, I D =. A. 6. V GS = V, I D =. A, T J = 5 C. 5.8 I D(on) On State Drain Current V GS = V, V DS = 5 V. A g FS Forward Transconductance V DS = V, I D =. A..5 S Dynamic Characteristics C iss Input Capacitance V DS = 5 V, V GS = V, 7 pf C oss Output Capacitance f =. MHz 3 pf C rss Reverse Transfer Capacitance 6 pf R G Gate Resistance V GS = 5 mv, f =. MHz 9 Ω Switching Characteristics (Note ) t d(on) Turn On Delay Time V DD = 3 V, I D =.9 A,.5 5 ns t r Turn On Rise Time V GS = V, R GEN = 6 Ω 9 8 ns t d(off) Turn Off Delay Time 36 ns t f Turn Off Fall Time 7 4 ns Q g Total Gate Charge V DS = 5 V, I D =. A,.7.4 nc Q gs Gate Source Charge V GS = V. nc Gate Drain Charge.4 nc Q gd Drain Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain Source Diode Forward Current. A V SD Drain Source Diode Forward Voltage V GS = V, I S =.44 A(Note ).8.4 V Notes:. R θja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θca is determined by the user's board design. a) 35 C/W when mounted on a minimum pad.. Scale : on letter size paper. Pulse Test: Pulse Width 3 µs, Duty Cycle.% BSS38 Rev C(W)
3 Typical Characteristics BSS V GS = V 6.V 4.5V 3.5V 3.V.5V.V R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE V GS =.5V 3.V 3.5V 4.V 4.5V 6.V V V DS, DRAIN TO SOURCE VOLTAGE (V) Figure. On-Region Characteristics. Figure. On-Resistance Variation with Drain Current and Gate Voltage. R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE I D = ma V GS = V R DS(ON), ON-RESISTANCE (OHM) T A = 5 o C T A = 5 o C I D = ma T J, JUNCTION TEMPERATURE ( o C) V GS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. I D, DRAIN CURRENT (A) V DS = V T A = -55 o C 5 o C 5 o C I S, REVERSE DRAIN CURRENT (A)... V GS = V T A = 5 o C 5 o C -55 o C V GS, GATE TO SOURCE VOLTAGE (V) V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. BSS38 Rev C(W)
4 Typical Characteristics BSS38 V GS, GATE-SOURCE VOLTAGE (V) I D = ma V DS = 8V 5V 8 3V Q g, GATE CHARGE (nc) CAPACITANCE (pf) C RSS C OSS C ISS V DS, DRAIN TO SOURCE VOLTAGE (V) f = MHz V GS = V Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.... R DS(ON) LIMIT V GS = V R θja = 35 o C/W T A = 5 o C µs ms ms ms s DC. V DS, DRAIN-SOURCE VOLTAGE (V) P(pk), PEAK TRANSIENT POWER (W) t, TIME (sec) R θja = 35 C/W T A = 5 C Figure 9. Maximum Safe Operating Area. Figure. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE.. D = t, TIME (sec) R θja (t) = r(t) * R θja R θja = 35 o C/W P(pk) t t T J - T A = P * R θja (t) Duty Cycle, D = t / t Figure. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note a. Transient thermal response will change depending on the circuit board design. BSS38 Rev C(W)
5 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx FAST ActiveArray FASTr Bottomless FPS Build it Now FRFET CoolFET GlobalOptoisolator CROSSVOLT GTO DOME HiSeC EcoSPARK I C E CMOS i-lo EnSigna ImpliedDisconnect FACT IntelliMAX FACT Quiet Series Across the board. Around the world. The Power Franchise Programmable Active Droop DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms ISOPLANAR LittleFET MICROCOUPLER MicroFET MicroPak MICROWIRE MSX MSXPro OCX OCXPro OPTOLOGIC OPTOPLANAR PACMAN POP Power47 PowerEdge PowerSaver PowerTrench QFET QS QT Optoelectronics Quiet Series RapidConfigure RapidConnect μserdes ScalarPump SILENT SWITCHER SMART START SPM Stealth SuperFET SuperSOT -3. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Product Status Definition SuperSOT -6 SuperSOT -8 SyncFET TinyLogic TINYOPTO TruTranslation UHC UltraFET UniFET VCX Wire Advance Information Preliminary No Identification Needed Formative or In Design First Production Full Production This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I7
Features. T A=25 o C unless otherwise noted. Symbol Parameter Ratings Units. (Note 1b) 0.46
N-Channel.8 Vgs Specified PowerTrench MOSFET October 2 General Description This 2V N-Channel MOSFET uses Fairchild s high voltage PowerTrench process. It has been optimized for power management applications.
More informationFeatures. TA=25 o C unless otherwise noted
NDSAN N-Channel, Logic Level, PowerTrench MOSFET June NDSAN General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor s advanced PowerTrench process that has been
More informationFeatures 1.7 A, 20 V. R DS(ON) Symbol Parameter Ratings Units
N-Channel.5V Specified PowerTrench TM MOSFET April 999 General Description This N-Channel.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially
More informationFeatures S 1. TA=25 o C unless otherwise noted. (Note 1b) 0.8
FC54P V P-Channel Logic Level PowerTrench MOSFET February 22 FC54P General escription This V P-Channel MOSFET uses Fairchild s high voltage PowerTrench process. It has been optimized for power management
More informationQFET TM FQP50N06. Features. TO-220 FQP Series
60V N-Channel MOSFET QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced
More informationFeatures I-PAK (TO-251AA) T A=25 o C unless otherwise noted. Symbol Parameter Ratings Units
F62A/FU62A 2V N-Channel PowerTrench MOSFET General escription This N-Channel MOSFET has been designed specifically to improve the overall efficiency of C/C converters using either synchronous or conventional
More informationFDD4243 40V P-Channel PowerTrench MOSFET -40V, -14A, 44mΩ Features
FDD443 4V P-Channel PowerTrench MOSFET -4V, -4A, 44mΩ Features Max r DS(on) = 44mΩ at V GS = -V, I D = -6.7A Max r DS(on) = 64mΩ at V GS = -4.5V, I D = -5.5A High performance trench technology for extremely
More informationBUZ11. 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET. Features. [ /Title (BUZ1 1) /Subject. (30A, 50V, 0.040 Ohm, N- Channel. Ordering Information
Data Sheet June 1999 File Number 2253.2 [ /Title (BUZ1 1) /Subject (3A, 5V,.4 Ohm, N- Channel Power MOS- FET) /Autho r () /Keywords (Intersil Corporation, N- Channel Power MOS- FET, TO- 22AB ) /Creator
More informationIRF840. 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET. Features. Ordering Information. Symbol. Packaging. Data Sheet January 2002
IRF84 Data Sheet January 22 8A, 5V,.85 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed
More informationIRF510. 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET. Features. Ordering Information. Symbol. Packaging. Data Sheet January 2002
IRF5 Data Sheet January 22 5.6A, V,.5 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed
More informationIRF640, RF1S640, RF1S640SM
IRF64, RFS64, RFS64SM Data Sheet January 22 8A, 2V,.8 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed,
More informationDescription. TO-220F FDPF Series. Symbol Parameter FDP26N40 FDPF26N40 Units V DSS Drain to Source Voltage 400 V V GSS Gate to Source Voltage ±30 V
FDP26N40 / FDPF26N40 N-Channel MOSFET 400V, 26A, 0.6Ω Features R DS(on) = 0.3Ω ( Typ.)@ V GS = 0V, I D = 3A Low gate charge ( Typ. 48nC) Low C rss ( Typ. 30pF) Fast switching 00% avalanche tested Improved
More information2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor
November 995 N7 / N7 / NS7A N-Channel Enhancement Mode Field Effect Transistor General escription Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary,
More information74VHC112 Dual J-K Flip-Flops with Preset and Clear
74VHC112 Dual J-K Flip-Flops with Preset and Clear Features High speed: f MAX = 200MHz (Typ.) at V CC = 5.0V Low power dissipation: I CC = 2µA (Max.) at T A = 25 C High noise immunity: V NIH = V NIL =
More informationData Sheet September 2004. Features. Packaging
HGTG3N6A4D Data Sheet September 24 6V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG3N6A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs
More informationBD434/436/438. Symbol Parameter Value Units V CBO Collector-Base Voltage : BD434 : BD436 : BD438
Medium Power Linear and Switching Applications Complement to BD433, BD435 and BD437 respectively 1 TO26 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T C =25 C
More informationApplications. Pin 1 TOP. WL-CSP 0.8X0.8 Thin
FDZ66PZ P-Channel.5 V Specified PowerTrench Thin WL-CSP MOSFET - V, -.6 A, 4 mω Features Max r DS(on) = 4 mω at V GS = -4.5 V, I D = - A Max r DS(on) = 8 mω at V GS = -.5 V, I D = -.5 A Max r DS(on) =
More informationFeatures. I-PAK FQU Series
00V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced
More informationFDS6679AZ P-Channel PowerTrench MOSFET -30V, -13A, 9mΩ General Description
FS6679AZ P-Channel PowerTrench MOSFET -3V, -3A, 9mΩ General escription This P-Channel MOSFET is producted using Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored
More informationCD4040BC, 12-Stage Ripple Carry Binary Counters CD4060BC, 14-Stage Ripple Carry Binary Counters
CD4040BC, 12-Stage Ripple Carry Binary Counters CD4060BC, 14-Stage Ripple Carry Binary Counters Features Wide supply voltage range: 3.0V to 15V High noise immunity: 0.45 V DD (Typ.) Low power TTL compatibility:
More informationTSM2N7002K 60V N-Channel MOSFET
SOT-23 SOT-323 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (ma) 5 @ V GS = 10V 100 60 5.5 @ V GS = 5V 100 Features Low On-Resistance ESD Protection High Speed Switching
More informationRFP30N06LE, RF1S30N06LESM
RFP3N6LE, RF1S3N6LESM Data Sheet January 24 3A, 6V, ESD Rated,.47 Ohm, Logic Level NChannel Power MOSFETs These are NChannel power MOSFETs manufactured using the MegaFET process. This process, which uses
More informationFQPF2N70. N-Channel QFET MOSFET 700 V, 2.0 A, 6.3 Ω. FQPF2N70 N-Channel QFET MOSFET. Absolute Maximum Ratings T C = 25 C unless otherwise noted.
FQPF2N70 N-Channel QFET MOSFET 700 V, 2.0 A, 6.3 Ω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor s proprietary planar stripe and DMOS technology. This
More informationFQP5N60C / FQPF5N60C N-Channel QFET MOSFET
FQP5N60C / FQPF5N60C N-Channel QFET MOSFET 600 V, 4.5 A,.5 Ω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor s proprietary planar stripe and DMOS technology.
More informationTA = 25 C unless otherwise noted. Symbol Parameter Value Units
Discrete POWER & Signal Technologies C B E TO-92 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05.
More informationFSAL200 Wide Bandwidth Quad 2:1 Analog Multiplexer / De-multiplexer Switch
FSAL200 Wide Bandwidth Quad 2:1 Analog Multiplexer / De-multiplexer Switch Features Typical 6Ω Switch Connection Between Two Ports Minimal Propagation Delay Through the Switch Low I CC Zero Bounce in Flow-Through
More informationMBR20200CT Dual High Voltage Schottky Rectifier
MBR20200CT Dual High Voltage Schottky Rectifier Features Low Forward Voltage Drop Low Power Loss and High Efficiency High Surge Capability RoHS Compliant Matte Tin (Sn) Lead Finish Terminal Leads Surface
More informationN-Channel 20-V (D-S) 175 C MOSFET
N-Channel -V (D-S) 75 C MOSFET SUD7N-4P PRODUCT SUMMARY V DS (V) r DS(on) ( ) (A) a.37 @ V GS = V 37.6 @ V GS = 4.5 V 9 TO-5 D FEATURES TrenchFET Power MOSFET 75 C Junction Temperature PWM Optimized for
More informationSymbol Parameter Ratings Units V DSS Drain-to-Source Voltage 80 V V GS Gate-to-Source Voltage ±20 V Drain Current - Continuous (V
FDBL8636_F85 N-Channel PowerTrench MOSFET 8 V, 3 A,.4 mω Features Typical R DS(on) =. mω at V GS = V, I D = 8 A Typical Q g(tot) = 72 nc at V GS = V, I D = 8 A UIS Capability RoHS Compliant Qualified to
More informationN-Channel 60-V (D-S), 175 C MOSFET
N-Channel 6-V (D-S), 75 C MOSFET SUP/SUB7N6-4 V (BR)DSS (V) r DS(on) ( ) (A) 6.4 7 a TO-22AB D TO-263 DRAIN connected to TAB G G D S Top View SUP7N6-4 G D S Top View SUB7N6-4 S N-Channel MOSFET Parameter
More informationN-Channel 40-V (D-S) 175 C MOSFET
N-Channel 4-V (D-S) 75 C MOSFET SUP/SUB85N4-4 PRODUCT SUMMARY V (BR)DSS (V) r DS(on) ( ) (A) 4.4 @ V GS = V 85 a TO-22AB D TO-263 G DRAIN connected to TAB G D S Top View Ordering Information SUP85N4-4
More informationSS32 - S310 Schottky Rectifier
SS32 - S310 Schottky Rectifier Features Metal to Silicon Rectifiers, Majority Carrier Conduction Low-Forward Voltage Drop Easy Pick and Place High-Surge Current Capability Description October 2013 The
More information74LVX132 Low Voltage Quad 2-Input NAND Schmitt Trigger
74LVX132 Low Voltage Quad 2-Input NAND Schmitt Trigger Features Input voltage level translation from 5V to 3V Ideal for low power/low noise 3.3V applications Guaranteed simultaneous switching noise level
More information1N5401-1N5408 General-Purpose Rectifiers
N540 - N5408 General-Purpose Rectifiers Features 3.0 A Operation at T A = 75 C with No Thermal Runaway High Current Capability Low Leakage DO-20AD COLOR BAND DENOTES CATHODE August 205 N540 - N5408 General-Purpose
More informationP-Channel 1.25-W, 1.8-V (G-S) MOSFET
Si5DS P-Channel.5-W,.-V (G-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).5 at V GS = -.5 V ±.5 -.7 at V GS = -.5 V ±. at V GS = -. V ± FEATURES Halogen-free According to IEC 9-- Available TrenchFET
More informationP-Channel 20 V (D-S) MOSFET
Si30CDS P-Channel 0 V (D-S) MOSFET MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) - 0 0. at V GS = - 4.5 V - 3. 0.4 at V GS = -.5 V -.7 3.3 nc TO-36 (SOT-3) FEATURES Halogen-free According
More informationFeatures. Symbol JEDEC TO-220AB
Data Sheet June 1999 File Number 2253.2 3A, 5V,.4 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching
More informationN-Channel 100 V (D-S) MOSFET
Si4DS N-Channel V (D-S) MOSFET MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.).4 at V GS = V..67 at V GS = 6 V..9 nc.78 at V GS = 4.5 V.7 FEATURES TrenchFET Power MOSFET % R g Tested
More informationBDX33/A/B/C. Symbol Parameter Value Units V CBO Collector-Base Voltage : BDX33 : BDX33A : BDX33B : BDX33C
Power Linear and Switching Applications High Gain General Purpose Power Darlington TR Complement to BDX34/34A/34B/34C respectively 1 TO-220 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor
More informationTSM020N03PQ56 30V N-Channel MOSFET
PDFN56 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain Key Parameter Performance Parameter Value Unit V DS 30 V R DS(on) (max) V GS = 10V 2 V GS = 4.5V 3 mω Q
More informationSTN3NF06L. N-channel 60 V, 0.07 Ω, 4 A, SOT-223 STripFET II Power MOSFET. Features. Application. Description
N-channel 60 V, 0.07 Ω, 4 A, SOT-223 STripFET II Power MOSFET Features Type V DSS (@Tjmax) Exceptional dv/dt capability Avalanche rugged technology 100% avalanche tested R DS(on) max STN3NF06L 60 V < 0.1
More informationHUF75344G3, HUF75344P3, HUF75344S3S
HUF7344G3, HUF7344P3, HUF7344S3S Data Sheet December 24 7A, V,. Ohm, NChannel UltraFET Power MOSFETs These NChannel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process
More informationNTMS4920NR2G. Power MOSFET 30 V, 17 A, N Channel, SO 8 Features
NTMS9N Power MOSFET 3 V, 7 A, N Channel, SO Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices
More informationN-channel enhancement mode TrenchMOS transistor
FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d V DSS = V Low on-state resistance Fast switching I D = A High thermal cycling performance Low thermal resistance R DS(ON) mω (V GS = V) g s R DS(ON)
More informationPower MOSFET. IRF510PbF SiHF510-E3 IRF510 SiHF510. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) () = 0.54 Q g max. (nc) 8.3 Q gs (nc) 2.3 Q gd (nc) 3.8 Configuration Single D TO220AB G FEATURES Dynamic dv/dt rating Available Repetitive avalanche rated
More informationP-Channel 20-V (D-S) MOSFET
Si33DS P-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).39 at V GS = -.5 V -.7 -.5 at V GS = -.5 V -..68 at V GS = -.8 V - 3.5 FEATURES Halogen-free According to IEC 69-- Available
More informationPower MOSFET FEATURES. IRFZ44PbF SiHFZ44-E3 IRFZ44 SiHFZ44 T C = 25 C
Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) (Ω) V GS = 10 V 0.028 Q g (Max.) (nc) 67 Q gs (nc) 18 Q gd (nc) 25 Configuration Single FEATURES Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching
More informationPower MOSFET FEATURES. IRF610PbF SiHF610-E3 IRF610 SiHF610. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 200 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 00 R DS(on) ( ) = 1.5 Q g (Max.) (nc) 8. Q gs (nc) 1.8 Q gd (nc) 4.5 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
More informationPower MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) = 0.55 Q g (Max.) (nc) 63 Q gs (nc) 9.0 Q gd (nc) 3 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
More informationPower MOSFET FEATURES. IRL540PbF SiHL540-E3 IRL540 SiHL540
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) = 5.0 V 0.077 Q g (Max.) (nc) 64 Q gs (nc) 9.4 Q gd (nc) 27 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel
More informationP-Channel 60 V (D-S) MOSFET
TP6K P-Channel 6 V (D-S) MOSFET G S PRODUCT SUMMARY V DS (V) R DS(on) ( ) V GS(th) (V) I D (ma) - 6 6 at V GS = - V - to - - 85 TO-6 (SOT-) Top View D Marking Code: 6Kwll 6K = Part Number Code for TP6K
More informationSIPMOS Small-Signal-Transistor
SIPMOS Small-Signal-Transistor Features N-channel Depletion mode dv /dt rated Product Summary V DS V R DS(on),max 3.5 Ω I DSS,min.4 A Available with V GS(th) indicator on reel Pb-free lead plating; RoHS
More informationP6KE6V8(C)A - P6KE440(C)A 600 W Transient Voltage Suppressors
P6KE6V8(C)A - P6KE440(C)A 600 W Transient Suppressors Features Glass-Passivated Junction 600 W Peak Pulse Power Capability at 1.0 ms Excellent Clamping Capability Low Incremental Surge Resistance Fast
More informationUNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD 50N06 50 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION TO-263 TO-25 The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast
More informationSTP80NF55-08 STB80NF55-08 STB80NF55-08-1 N-CHANNEL 55V - 0.0065 Ω - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET
STP80NF55-08 STB80NF55-08 STB80NF55-08-1 N-CHANNEL 55V - 0.0065 Ω - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET TYPE V DSS R DS(on) I D STB80NF55-08/-1 STP80NF55-08 55 V 55 V
More informationSTW20NM50 N-CHANNEL 550V @ Tjmax - 0.20Ω - 20ATO-247 MDmesh MOSFET
N-CHANNEL 550V @ Tjmax - 0.20Ω - 20ATO-247 MDmesh MOSFET TYPE V DSS (@Tjmax) R DS(on) I D STW20NM50 550V < 0.25Ω 20 A TYPICAL R DS (on) = 0.20Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description Advanced
More informationS1A - S1M General Purpose Rectifiers
S1A - S1M General Purpose Rectifiers Features 1 AI F(AV) Current Rating Glass Passivated Low Leakage: - 1 μa Maximum at 25 C - 50 μa Maximum at 125 C Fast Response: 1.8 μs (Typical) 30 A Surge Rating 50
More informationN-Channel 60-V (D-S) MOSFET
7/7, VQJ/P, BS7 -Channel 6-V (D-S) MOSFET Part umber V (BR)DSS Min (V) r DS(on) Max ( ) V GS(th) (V) I D (A) 7 5 @ V GS = V.8 to. 7 7.5 @ V GS = V to.5.5 VQJ 6 5.5 @ V GS = V.8 to.5.5 VQP 5.5 @ V GS =
More informationFGH40N60UFD 600 V, 40 A Field Stop IGBT
FGH4N6UFD 6 V, 4 A Field Stop IGBT Features High Current Capability Low Saturation Voltage: V CE(sat) =.8 V @ I C = 4 A High Input Impedance Fast Switching RoHS Compliant Applications Solar Inverter, UPS,
More informationSS22 - S210 Schottky Rectifier
SS22 - S210 Schottky Rectifier Features Glass-Passivated Junctions High-Current Capability, Low V F Applications Low Voltage High-Frequency Inverters Free Wheeling Polarity Protection Description October
More informationBSN20. 1. Description. 2. Features. 3. Applications. 4. Pinning information. N-channel enhancement mode field-effect transistor
Rev. 3 26 June 2 Product specification. Description in a plastic package using TrenchMOS technology. Product availability: in SOT23. 2. Features TrenchMOS technology Very fast switching Logic level compatible
More informationOptiMOS 3 Power-Transistor
Type IPD6N3L G OptiMOS 3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications Product Summary V DS
More informationFeatures. Description. Table 1. Device summary. Order code Marking Package Packing. STP110N8F6 110N8F6 TO-220 Tube
N-channel 80 V, 0.0056 Ω typ.,110 A, STripFET F6 Power MOSFET in a TO-220 package Features Datasheet - production data Order code V DS R DS(on)max I D P TOT TAB STP110N8F6 80 V 0.0065 Ω 110 A 200 W TO-220
More informationIRF6201PbF. HEXFET Power MOSFET V DS 20 V. R DS(on) max. 2.75 mω. Q g (typical) 130 nc 27 A. Absolute Maximum Ratings
PD - 97500A IRF620PbF V DS 20 V HEXFET Power MOSFET R DS(on) max (@ = 4.5V) 2.45 mω 6 R DS(on) max (@ = 2.5V) 2.75 mω 6 6 Q g (typical) 30 nc * SO-8 I D (@T A = 25 C) 27 A Applications OR-ing or hot-swap
More informationCoolMOS TM Power Transistor
CoolMOS TM Power Transistor Features New revolutionary high voltage technology Intrinsic fast-recovery body diode Extremely low reverse recovery charge Ultra low gate charge Extreme dv /dt rated Product
More informationSi9953DY* Dual P-Channel Enhancement Mode MOSFET 9 '66 'UDLQ6RXUFHÃ9ROWDJH 9 9 *66 *DWH6RXUFHÃ9ROWDJH ± 9 Ã3XOVHG 3 '
Si9953DY* Dual P-Channel Enhancement Mode MOSFET 0.250 Ω 0.400 Ω ÃÃÃÃÃÃÃ7 $ R &ÃXQOHVVÃRWKHUZLVHÃQRWHG 9 '66 'UDLQ6RXUFHÃ9ROWDJH 9 9 *66 *DWH6RXUFHÃ9ROWDJH ± 9, ' 'UDLQÃ&XUUHQW Ã&RQWLQXRXVÃ ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ1RWHÃD
More informationSTP55NF06L STB55NF06L - STB55NF06L-1
General features STP55NF06L STB55NF06L - STB55NF06L-1 N-channel 60V - 0.014Ω - 55A TO-220/D 2 PAK/I 2 PAK STripFET II Power MOSFET Type V DSS R DS(on) I D STP55NF06L 60V
More informationOptiMOS 3 Power-Transistor
Type IPD36N4L G OptiMOS 3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC ) for target applications Product Summary V DS
More informationMOSFET N-channel enhancement switching transistor IMPORTANT NOTICE. http://www.philips.semiconductors.com use http://www.nxp.com
Rev. 3 21 November 27 Product data sheet Dear customer, IMPORTANT NOTICE As from October 1st, 26 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets
More informationOptiMOS Power-Transistor Product Summary
OptiMOS Power-Transistor Product Summary V DS 55 V R DS(on),max 4) 35 mω Features Dual N-channel Logic Level - Enhancement mode AEC Q11 qualified I D 2 A PG-TDSON-8-4 MSL1 up to 26 C peak reflow 175 C
More informationPower MOSFET FEATURES. IRF540PbF SiHF540-E3 IRF540 SiHF540. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.077 Q g (Max.) (nc) 72 Q gs (nc) 11 Q gd (nc) 32 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET
More informationRS1A - RS1M Fast Rectifiers
RSA - RSM Fast Rectifiers Features Glass-Passivated Junction For Surface Mounted Applications uilt-in Strain Relief, Ideal for Automated Placement UL Certified: Certificate # E326243 SMA/DO-24AC COLOR
More informationOptiMOS TM Power-Transistor
Type BSC28N6NS OptiMOS TM Power-Transistor Features Optimized for high performance SMPS, e.g. sync. rec. % avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC ) for target
More informationMMBF4391LT1G, SMMBF4391LT1G, MMBF4392LT1G, MMBF4393LT1G. JFET Switching Transistors. N Channel
LT1G, SLT1G, LT1G, LT1G JFET Switching Transistors NChannel Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ1 Qualified and PPAP Capable
More informationSTP60NF06. N-channel 60V - 0.014Ω - 60A TO-220 STripFET II Power MOSFET. General features. Description. Internal schematic diagram.
N-channel 60V - 0.014Ω - 60A TO-220 STripFET II Power MOSFET General features Type V DSS R DS(on) I D STP60NF06 60V
More informationPower MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) = 0.55 Q g (Max.) (nc) 63 Q gs (nc) 9.0 Q gd (nc) 3 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
More informationIRF740 N-CHANNEL 400V - 0.46Ω - 10A TO-220 PowerMESH II MOSFET
N-CHANNEL 400V - 0.46Ω - 10A TO-220 PowerMESH II MOSFET TYPE V DSS R DS(on) I D IRF740 400 V < 0.55 Ω 10 A TYPICAL R DS (on) = 0.46Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE VERY
More informationPower MOSFET FEATURES. IRF9640PbF SiHF9640-E3 IRF9640 SiHF9640
Power MOSFET PRODUCT SUMMARY V DS (V) 200 R DS(on) (Ω) = 10 V 0.50 Q g (Max.) (nc) 44 Q gs (nc) 7.1 Q gd (nc) 27 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S D
More informationAutomotive P-Channel 60 V (D-S) 175 C MOSFET
Automotive P-Channel 6 V (D-S) 75 C MOSFET SQ36AEES PRODUCT SUMMARY V DS (V) -6 R DS(on) () at V GS = - V 7 R DS(on) () at V GS = -4.5 V.3 I D (A) -.9 Configuration Single D 3 SOT-3 (TO-36) G Top View
More informationPower MOSFET FEATURES. IRF520PbF SiHF520-E3 IRF520 SiHF520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.7 Q g (Max.) (nc) 16 Q gs (nc) 4.4 Q gd (nc) 7.7 Configuration Single TO0AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET
More informationA I DM. W/ C V GS Gate-to-Source Voltage ± 12. Thermal Resistance Symbol Parameter Typ. Max. Units
V DS 2 V V GS Max ±2 V * PD - 973A HEXFET Power MOSFET R DSon) max @V GS = 4.V) 2. m R DSon) max @V GS = 2.V) 27. m 6 Micro3 TM SOT-23) Applications) Load System Switch Features and Benefits Features Benefits
More informationSTP60NF06FP. N-channel 60V - 0.014Ω - 30A TO-220FP STripFET II Power MOSFET. General features. Description. Internal schematic diagram.
N-channel 60V - 0.014Ω - 30A TO-220FP STripFET II Power MOSFET General features Type V DSS R DS(on) I D STP60NF06FP 60V
More informationV DSS R DS(on) max Qg. 30V 3.2mΩ 36nC
PD - 96232 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification
More informationRoHS Compliant Containing no Lead, no Bromide and no Halogen. IRF9310PbF SO8 Tube/Bulk 95 IRF9310TRPbF SO8 Tape and Reel 4000
PD 97437A IRF93PbF HEXFET Power MOSFET V DS 30 V R DS(on) max (@V GS = V) I D (@T A = 25 C) 4. mω 20 A * SO8 Applications Charge and Discharge Switch for Notebook PC Battery Application Features and Benefits
More informationQRE1113, QRE1113GR Minature Reflective Object Sensor
QRE1113, QRE1113GR Minature Reflective Object Sensor Features Phototransistor output No contact surface sensing Miniature package Lead form style: Gull Wing QRE1113GR Package Dimensions 1.80 2.90 2.50
More informationT A = 25 C (Notes 3 & 5) Product Marking Reel size (inches) Tape width (mm) Quantity per reel DMC4040SSD-13 C4040SD 13 12 2,500
Product Line of 4 COMPLEMENTRY PIR ENHNCEMENT MODE MOSFET Product Summary Device (BR)DSS R DS(on) max I D max () T = 25 C (Notes 3 & 5) 25mΩ @ = 1 7.5 Q1 4 4mΩ @ = 4.5 6.2 Features and Benefits Matched
More informationIRLR8743PbF IRLU8743PbF HEXFET Power MOSFET
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
More informationA I DM. W/ C V GS Gate-to-Source Voltage ± 20. Thermal Resistance Symbol Parameter Typ. Max. Units
V DS 2 V V GS Max ± 2 V R DSon) max @V GS = V) 24 m * PD - 9787A HEXFET Power MOSFET R DSon) max @V GS = 4.V) 4 m 6 Micro3 TM SOT-23) Applications) Load System Switch Features and Benefits Features Benefits
More informationFinal data. Maximum Ratings Parameter Symbol Value Unit
SPPN8C3 SPN8C3 Cool MOS Power Transistor V DS 8 V Feature R DS(on).45 Ω New revolutionary high voltage technology Ultra low gate charge I D Periodic avalanche rated Extreme dv/dt rated Ultra low effective
More informationAUTOMOTIVE MOSFET. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD 9399A AUTOMOTIVE MOSFET Typical Applications Electric Power Steering (EPS) Antilock Braking System (ABS) Wiper Control Climate Control Power Door Benefits Advanced Process Technology Ultra Low OnResistance
More informationBD135 / 137 / 139 NPN Epitaxial Silicon Transistor
BD135 / 137 / 139 NPN Epitaxial Silicon Transistor Features Complement to BD136, BD138 and BD140 respectively Applications Medium Power Linear and Switching 1 TO-126 1. Emitter 2.Collector 3.Base August
More informationPower MOSFET. IRF9520PbF SiHF9520-E3 IRF9520 SiHF9520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS - 100 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 10 V 0.60 Q g (Max.) (nc) 18 Q gs (nc) 3.0 Q gd (nc) 9.0 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S D PChannel
More informationRFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM
A M A A December 995 SEMICONDUCTOR RFG7N6, RFP7N6, RFS7N6, RFS7N6SM 7A, 6V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs Features 7A, 6V r DS(on) =.4Ω Temperature Compensated PSPICE Model
More informationIRFP460LC PD - 9.1232. HEXFET Power MOSFET V DSS = 500V. R DS(on) = 0.27Ω I D = 20A
HEXFET Power MOSFET PD - 9.232 IRFP460LC Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, C oss, C rss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive
More information30 V, single N-channel Trench MOSFET
SOT883B Rev. 1 11 May 212 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN16B-3 (SOT883B) Surface-Mounted
More informationIRLR8729PbF IRLU8729PbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationMTD3055VT4. http://onsemi.com. MAXIMUM RATINGS (T C = 25 C unless otherwise noted) MARKING DIAGRAMS ORDERING INFORMATION. R DS(on) TYP 60 V 100 m
MTD55V Preferred Device Power MOSFET Amps, 6 Volts NChannel This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching
More informationLower Conduction Losses Low Thermal Resistance to PCB ( 0.5 C/W)
PD -97428 IRFH5020PbF HEXFET Power MOSFET V DS 200 V 55 m: R DS(on) max (@V GS = V) Q g (typical) 36 nc R G (typical).9 : I D (@T c(bottom) = 25 C) 43 A PQFN 5X6 mm Applications Secondary Side Synchronous
More informationIRFP240. 20A, 200V, 0.180 Ohm, N-Channel Power MOSFET. Features. Ordering Information. Symbol. Packaging. Data Sheet January 2002
IRFP24 Data heet January 22 2A, 2V,.8 Ohm, N-Channel Power MOFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOFET designed, tested, and guaranteed to
More information