MTD3055VT4. MAXIMUM RATINGS (T C = 25 C unless otherwise noted) MARKING DIAGRAMS ORDERING INFORMATION. R DS(on) TYP 60 V 100 m
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1 MTD55V Preferred Device Power MOSFET Amps, 6 Volts NChannel This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. Avalanche Energy Specified I DSS and V DS(on) Specified at Elevated Temperature V (BR)DSS R DS(on) TYP 6 V m NChannel D I D MAX A MAXIMUM RATINGS (T C = 5 C unless otherwise noted) Rating Symbol Value Unit DrainSource Voltage V DSS 6 DrainGate Voltage (R GS =. MΩ) V DGR 6 GateSource Voltage Continuous Nonrepetitive (t p ms) Drain Current 5 C Drain Current C Drain Current Single Pulse (t p μs) Total Power 5 C Derate above 5 C Total Power T A = 5 C (Note ) V GS ± V GSM ± 5 I D I D I DM 7. 7 P D.. Operating and Storage Temperature Range T J, T stg 55 to 75 Single Pulse DraintoSource Avalanche Energy Starting T J = 5 C (V DD = 5, V GS =, I L = Apk, L =. mh, R G = 5 Ω ) Thermal Resistance Junction to Case Junction to Ambient (Note ) Junction to Ambient (Note ) Maximum Temperature for Soldering Purposes, / from case for seconds Vpk Adc Apk Watts W/ C Watts C E AS 7 mj R θjc R θja R θja. 7. C/W T L 6 C. When surface mounted to an FR board using the minimum recommended pad size.. When surface mounted to an FR board using.5 sq. in. drain pad size. 55V Y WW G CASE 69C Style CASE 69D Style Device Code = Year = Work Week S MARKING DIAGRAMS Drain Gate Gate YWW 55V Drain Drain YWW 55V Drain ORDERING INFORMATION Source Source Device Package Shipping MTD55V 75 Units/Rail MTD55V MTD55VT Straight Lead 75 Units/Rail 5 Tape & Reel Semiconductor Components Industries, LLC, 6 August, 6 Rev. 5 Publication Order Number: MTD55V/D
2 MTD55V ELECTRICAL CHARACTERISTICS (T J = 5 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DrainSource Breakdown Voltage (V GS =, I D = 5 μadc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (V DS = 6, V GS = ) (V DS = 6, V GS =, T J = 5 C) V (BR)DSS 6 GateBody Leakage Current (V GS = ±, V DS = ) I GSS nadc ON CHARACTERISTICS (Note ) Gate Threshold Voltage (V DS = V GS, I D = 5 μadc) Temperature Coefficient (Negative) I DSS V GS(th). Static DrainSource OnResistance (V GS =, I D = 6. Adc) R DS(on)..5 Ohm DrainSource OnVoltage (V GS = ) (I D = Adc) (I D = 6. Adc, T J = 5 C) V DS(on) Forward Transconductance (V DS = 7., I D = 6. Adc) g FS. 5. mhos DYNAMIC CHARACTERISTICS Input Capacitance C iss 5 pf Output Capacitance (V DS = 5, V GS =, f =. MHz) C oss Reverse Transfer Capacitance C rss 5 5 SWITCHING CHARACTERISTICS (Note ) TurnOn Delay Time Rise Time (V DD =, I D = Adc, t r 6 TurnOff Delay Time V GS =, R G = 9. Ω) t d(off) mv/ C μadc mv/ C t d(on) 7. ns Fall Time t f 5 Gate Charge (See Figure ) (V DS =, I D = Adc, V GS = ) Q T. 7 nc Q. Q 5. Q 5.5 SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage (Note ) (I S = Adc, V GS = ) (I S = Adc, V GS =, T J = 5 C) Reverse Recovery Time (See Figure 5) Reverse Recovery Stored Charge (I S = Adc, V GS =, di S /dt = A/μs) INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the drain lead.5 from package to center of die) Internal Source Inductance (Measured from the source lead.5 from package to source bond pad). Pulse Test: Pulse Width μs, Duty Cycle %.. Switching characteristics are independent of operating junction temperature. V SD..9.6 t rr 56 ns t a t b 6 Q RR. μc L D.5 nh L S 7.5 nh
3 MTD55V TYPICAL ELECTRICAL CHARACTERISTICS I D, DRAIN CURRENT (AMPS) 6 T J = 5 C V GS = V V V DS V T J = 55 C 9 V 5 V DS, DRAINTOSOURCE VOLTAGE (VOLTS) 7 V 6 V 5 V V I D, DRAIN CURRENT (AMPS) 6 5 C V GS, GATETOSOURCE VOLTAGE (VOLTS) C Figure. OnRegion Characteristics Figure. Transfer Characteristics R DS(on), DRAINTOSOURCE RESISTANCE (OHMS) V GS = V T J = C 5 C 55 C 6 I D, DRAIN CURRENT (AMPS) R DS(on), DRAINTOSOURCE RESISTANCE (OHMS) T J = 5 C V GS = V 5 V. 6 I D, DRAIN CURRENT (AMPS) Figure. OnResistance versus Drain Current and Temperature Figure. OnResistance versus Drain Current and Gate Voltage, DRAINTOSOURCE RESISTANCE (NORMALIZED) RDS(on) V GS = V I D = 6 A T J, JUNCTION TEMPERATURE ( C) Figure 5. OnResistance Variation with Temperature 75 IDSS, LEAKAGE (na) V GS = V T J = 5 C 5 6 V DS, DRAINTOSOURCE VOLTAGE (VOLTS) Figure 6. DrainToSource Leakage Current versus Voltage
4 MTD55V POWER MOSFET SWITCHING Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (Δt) are determined by how fast the FET input capacitance can be charged by current from the generator. The published capacitance data is difficult to use for calculating rise and fall because draingate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (I G(AV) ) can be made from a rudimentary analysis of the drive circuit so that t = Q/I G(AV) During the rise and fall time interval when switching a resistive load, V GS remains virtually constant at a level known as the plateau voltage, V SGP. Therefore, rise and fall times may be approximated by the following: t r = Q x R G /(V GG V GSP ) t f = Q x R G /V GSP where V GG = the gate drive voltage, which varies from zero to V GG R G = the gate drive resistance and Q and V GSP are read from the gate charge curve. During the turnon and turnoff delay times, gate current is not constant. The simplest calculation uses appropriate values from the capacitance curves in a standard equation for voltage change in an RC network. The equations are: t d(on) = R G C iss In [V GG /(V GG V GSP )] t d(off) = R G C iss In (V GG /V GSP ) The capacitance (C iss ) is read from the capacitance curve at a voltage corresponding to the offstate condition when calculating t d(on) and is read at a voltage corresponding to the onstate when calculating t d(off). At high switching speeds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring which is common to both the drain and gate current paths, produces a voltage at the source which reduces the gate drive current. The voltage is determined by Ldi/dt, but since di/dt is a function of drain current, the mathematical solution is complex. The MOSFET output capacitance also complicates the mathematics. And finally, MOSFETs have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elements. If the parasitics were not present, the slope of the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. V DS = V V GS = V T J = 5 C C iss C, CAPACITANCE (pf) 6 C rss C iss C oss C rss V GS V DS GATETOSOURCE OR DRAINTOSOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation
5 MTD55V V GS, GATETOSOURCE VOLTAGE (VOLTS) 6 Q QT Q V GS I D = A T J = 5 C Q V DS Q T, TOTAL CHARGE (nc) 6 5 V DS, DRAINTOSOURCE VOLTAGE (VOLTS) t, TIME (ns) V DD = V I D = A V GS = V T J = 5 C t d(off) t d(on) t r t f R G, GATE RESISTANCE (OHMS) Figure. GateToSource and DrainToSource Voltage versus Total Charge Figure 9. Resistive Switching Time Variation versus Gate Resistance DRAINTOSOURCE DIODE CHARACTERISTICS V GS = V T J = 5 C, SOURCE CURRENT (AMPS) IS V SD, SOURCETODRAIN VOLTAGE (VOLTS) Figure. Diode Forward Voltage versus Current SAFE OPERATING AREA The Forward Biased Safe Operating Area curves define the maximum simultaneous draintosource voltage and drain current that a transistor can handle safely when it is forward biased. Curves are based upon maximum peak junction temperature and a case temperature (T C ) of 5 C. Peak repetitive pulsed power limits are determined by using the thermal response data in conjunction with the procedures discussed in AN569, Transient Thermal ResistanceGeneral Data and Its Use. Switching between the offstate and the onstate may traverse any load line provided neither rated peak current (I DM ) nor rated voltage (V DSS ) is exceeded and the transition time (t r,t f ) do not exceed μs. In addition the total power averaged over a complete switching cycle must not exceed (T J(MAX) T C )/(R θjc ). A Power MOSFET designated EFET can be safely used in switching circuits with unclamped inductive loads. For reliable operation, the stored energy from circuit inductance dissipated in the transistor while in avalanche must be less than the rated limit and adjusted for operating conditions differing from those specified. Although industry practice is to rate in terms of energy, avalanche energy capability is not a constant. The energy rating decreases nonlinearly with an increase of peak current in avalanche and peak junction temperature. Although many EFETs can withstand the stress of draintosource avalanche at currents up to rated pulsed current (I DM ), the energy rating is specified at rated continuous current (I D ), in accordance with industry custom. The energy rating must be derated for temperature as shown in the accompanying graph (Figure ). Maximum energy at currents below rated continuous I D can safely be assumed to equal the values indicated. 5
6 MTD55V SAFE OPERATING AREA I D, DRAIN CURRENT (AMPS) V GS = V SINGLE PULSE T C = 5 C μs ms μs. ms dc R DS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT... V DS, DRAINTOSOURCE VOLTAGE (VOLTS) Figure. Maximum Rated Forward Biased Safe Operating Area E AS, SINGLE PULSE DRAINTOSOURCE AVALANCHE ENERGY (mj) T J, STARTING JUNCTION TEMPERATURE ( C) I D = A Figure. Maximum Avalanche Energy versus Starting Junction Temperature 75. D =.5 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE SINGLE PULSE P (pk) t t DUTY CYCLE, D = t /t R θjc (t) = r(t) R θjc D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t T J(pk) T C = P (pk) R θjc (t)..e5.e.e.e.e.e+.e+ t, TIME (s) Figure. Thermal Response di/dt I S t rr t a t b TIME t p.5 I S I S Figure. Diode Reverse Recovery Waveform 6
7 MTD55V PACKAGE DIMENSIONS CASE 69C ISSUE O V S F B R G L A K D PL J H C. (.5) M T T SEATING PLANE E U Z INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D E F G. BSC.5 BSC H...7. J K L.9 BSC.9 BSC R S U..5 V Z.55.9 STYLE : PIN. GATE. DRAIN. SOURCE. DRAIN SOLDERING FOOTPRINT* SCALE : mm inches *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 7
8 MTD55V PACKAGE DIMENSIONS CASE 69D ISSUE O V B R C E NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y.5M, 9.. CONTROLLING DIMENSION: INCH. S T SEATING PLANE F G A K D PL J. (.5) M T H Z INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D E F G.9 BSC.9 BSC H...7. J K R S V Z.55.9 STYLE : PIN. GATE. DRAIN. SOURCE. DRAIN ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 56, Denver, Colorado 7 USA Phone: or 6 Toll Free USA/Canada Fax: or 67 Toll Free USA/Canada N. American Technical Support: 955 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 9 Kamimeguro, Meguroku, Tokyo, Japan 55 Phone: 5775 ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative. MTD55V/D
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Low Capacitance Surface Mount TVS for High-Speed Data terfaces The LC3- transient voltage suppressor is designed to protect equipment attached to high speed communication lines from ESD, EFT, and lighting.
P-Channel 20-V (D-S) MOSFET
Si33DS P-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).39 at V GS = -.5 V -.7 -.5 at V GS = -.5 V -..68 at V GS = -.8 V - 3.5 FEATURES Halogen-free According to IEC 69-- Available
1SMB59xxBT3G Series, SZ1SMB59xxT3G Series. 3 Watt Plastic Surface Mount Zener Voltage Regulators
9xxBTG Series, SZ9xxTG Series Watt Plastic Surface Mount Zener Voltage Regulators This complete new line of W Zener diodes offers the following advantages. Features Zener Voltage Range. V to V ESD Rating
AOT402 N-Channel Enhancement Mode Field Effect Transistor
AOT42 N-Channel Enhancement Mode Field Effect Transistor General Description The AOT42 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable
Power MOSFET FEATURES. IRFZ44PbF SiHFZ44-E3 IRFZ44 SiHFZ44 T C = 25 C
Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) (Ω) V GS = 10 V 0.028 Q g (Max.) (nc) 67 Q gs (nc) 18 Q gd (nc) 25 Configuration Single FEATURES Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching
STN3NF06L. N-channel 60 V, 0.07 Ω, 4 A, SOT-223 STripFET II Power MOSFET. Features. Application. Description
N-channel 60 V, 0.07 Ω, 4 A, SOT-223 STripFET II Power MOSFET Features Type V DSS (@Tjmax) Exceptional dv/dt capability Avalanche rugged technology 100% avalanche tested R DS(on) max STN3NF06L 60 V < 0.1
OptiMOS 3 Power-Transistor
Type IPD36N4L G OptiMOS 3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC ) for target applications Product Summary V DS
Power MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) = 0.55 Q g (Max.) (nc) 63 Q gs (nc) 9.0 Q gd (nc) 3 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
PN2222, PN2222A. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS MARKING DIAGRAM
, General Purpose Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Collector-Emitter Voltage Rating Symbol Value Unit V CEO 3 4 2 BASE 1 EMITTER Collector-Base
N-channel enhancement mode TrenchMOS transistor
FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d V DSS = V Low on-state resistance Fast switching I D = A High thermal cycling performance Low thermal resistance R DS(ON) mω (V GS = V) g s R DS(ON)
NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, NGP15N41CL, NGP15N41ACL Ignition IGBT 15 A, 410 V
NGD5NCL, NGD5NACL, NGB5NCL, NGB5NACL, NGP5NCL, NGP5NACL Ignition IGBT 5 A, V N Channel DPAK, D PAK and TO This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating
2N4401. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* http://onsemi.com. Features MAXIMUM RATINGS THERMAL CHARACTERISTICS
General Purpose Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Collector Base Voltage V CBO 6 Vdc Emitter
STW20NM50 N-CHANNEL 550V @ Tjmax - 0.20Ω - 20ATO-247 MDmesh MOSFET
N-CHANNEL 550V @ Tjmax - 0.20Ω - 20ATO-247 MDmesh MOSFET TYPE V DSS (@Tjmax) R DS(on) I D STW20NM50 550V < 0.25Ω 20 A TYPICAL R DS (on) = 0.20Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED
2N6426, 2N6427. Darlington Transistors. NPN Silicon. These are Pb Free Devices* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS
2N6426, 2N6426 is a Preferred Device Darlington Transistors NPN Silicon Features These are PbFree Devices* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 40 Vdc Collector Base
STW34NB20 N-CHANNEL 200V - 0.062 Ω - 34A TO-247 PowerMESH MOSFET
N-CHANNEL 200V - 0.062 Ω - 34A TO-247 PowerMESH MOSFET Table 1. General Features Figure 1. Package Type V DSS R DS(on) I D STW34NB20 200 V < 0.075 Ω 34 A FEATURES SUMMARY TYPICAL R DS(on) = 0.062 Ω EXTREMELY
N-Channel 1.25-W, 2.5-V MOSFET
Si3DS N-Channel.5-W,.5-V MOSFET V DS (V) r DS(on) ( ) (A).5 @ V GS =.5 V..5 @ V GS =.5 V. TO-3 (SOT-3) G 3 D S Top View Si3DS (A)* *Marking Code Parameter Symbol Limit Unit Drain-Source Voltage V DS V
STP10NK60Z/FP, STB10NK60Z/-1 STW10NK60Z N-CHANNEL 600V-0.65Ω-10A TO-220/FP/D 2 PAK/I 2 PAK/TO-247 Zener-Protected SuperMESH Power MOSFET
STP10NK60Z/FP, STB10NK60Z/-1 STW10NK60Z N-CHANNEL 600V-0.65Ω-10A TO-220/FP/D 2 PAK/I 2 PAK/TO-247 Zener-Protected SuperMESH Power MOSFET TYPE V DSS R DS(on) I D Pw STP10NK60Z STP10NK60ZFP STB10NK60Z STB10NK60Z-1
D-Pak TO-252AA. I-Pak TO-251AA. 1
l Ultra Low OnResistance l PChannel l Surface Mount (IRFR920N) l Straight Lead (IRFU920N) l Advanced Process Technology l Fast Switching G l Fully Avalanche Rated l LeadFree Description Fifth Generation
NTD3055-150, NVD3055-150. Power MOSFET. 9.0 A, 60 V, N Channel DPAK/IPAK. 9.0 AMPERES, 60 VOLTS R DS(on) = 122 m (Typ)
NTD55-5, NVD55-5 Power MOSFET 9. A, 6 V, Nhannel /IPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features NVD
AP4511GM Pb Free Plating Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp.
AP5GM Pb Free Plating Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BV DSS 35V Low On-resistance D D D R DS(ON) 5mΩ D D D D D Fast
Features. TA=25 o C unless otherwise noted
NDSAN N-Channel, Logic Level, PowerTrench MOSFET June NDSAN General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor s advanced PowerTrench process that has been
Power MOSFET FEATURES. IRL540PbF SiHL540-E3 IRL540 SiHL540
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) = 5.0 V 0.077 Q g (Max.) (nc) 64 Q gs (nc) 9.4 Q gd (nc) 27 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel
P2N2222ARL1G. Amplifier Transistors. NPN Silicon. These are Pb Free Devices* Features. http://onsemi.com
Amplifier Transistors NPN Silicon Features These are PbFree Devices* MAXIMUM RATINGS (T A = 25 C unless otherwise noted) Characteristic Symbol Value Unit CollectorEmitter Voltage V CEO 4 CollectorBase
MCR08B, MCR08M. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 0.8 AMPERES RMS 200 thru 600 VOLTS
MCR8B, MCR8M Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for line powered consumer applications such as relay and lamp drivers, small motor controls,
IRLR8729PbF IRLU8729PbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
SMPS MOSFET. V DSS R DS(on) typ. Trr typ. I D. 600V 385mΩ 130ns 15A
Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications SMPS MOSFET PD - 9445A HEXFET Power MOSFET V DSS R DS(on) typ. Trr typ.
MPS2907A Series. General Purpose Transistors. PNP Silicon. These are Pb Free Devices* Features MAXIMUM RATINGS
General Purpose Transistors PNP Silicon Features These are PbFree Devices* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 6 Vdc CollectorBase Voltage V CBO 6 Vdc EmitterBase
STP62NS04Z N-CHANNEL CLAMPED 12.5mΩ - 62A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET
N-CHANNEL CLAMPED 12.5mΩ - 62A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET TYPE V DSS R DS(on) I D STP62NS04Z CLAMPED
STB4NK60Z, STB4NK60Z-1, STD4NK60Z STD4NK60Z-1, STP4NK60Z,STP4NK60ZFP
STB4NK60Z, STB4NK60Z-1, STD4NK60Z STD4NK60Z-1, STP4NK60Z,STP4NK60ZFP N-channel 600 V - 1.76 Ω - 4 A SuperMESH Power MOSFET DPAK - D 2 PAK - IPAK - I 2 PAK - TO-220 - TO-220FP Features Type V DSS R DS(on)
Power MOSFET FEATURES. IRF740APbF SiHF740A-E3 IRF740A SiHF740A
Power MOSFET PRODUCT SUMMARY V DS (V) 400 R DS(on) ( ) = 0 V 0.55 Q g (Max.) (nc) 36 Q gs (nc) 9.9 Q gd (nc) 6 Configuration Single D TO220AB G FEATURES Low Gate Charge Q g Results in Simple Drive Requirement
BC546B, BC547A, B, C, BC548B, C. Amplifier Transistors. NPN Silicon. Pb Free Package is Available* Features. http://onsemi.com MAXIMUM RATINGS
B, A, B, C, B, C Amplifier Transistors NPN Silicon Features PbFree Package is Available* COLLECTOR 1 2 BASE MAXIMUM RATINGS Collector-Emitter oltage Collector-Base oltage Rating Symbol alue Unit CEO 65
C106 Series. Sensitive Gate Silicon Controlled Rectifiers
C6 Series Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control;
MPS2222, MPS2222A. NPN Silicon. Pb Free Packages are Available* http://onsemi.com. Features MAXIMUM RATINGS MARKING DIAGRAMS THERMAL CHARACTERISTICS
, is a Preferred Device General Purpose Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS CollectorEmitter Voltage CollectorBase Voltage Rating Symbol Value Unit
Absolute Maximum Ratings Parameter Max. Units
l l l l l Advanced Process Technology Surface Mount (IRFZ46S) Low-profile through-hole (IRFZ46L) 175 C Operating Temperature Fast Switching Description Third Generation HEXFETs from International Rectifier
Features 1.7 A, 20 V. R DS(ON) Symbol Parameter Ratings Units
N-Channel.5V Specified PowerTrench TM MOSFET April 999 General Description This N-Channel.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially
NUD4011. Low Current LED Driver
NUD0 Low LED Driver This device is designed to replace discrete solutions for driving LEDs in AC/DC high voltage applications (up to 00 V). An external resistor allows the circuit designer to set the drive
IRF740 N-CHANNEL 400V - 0.46Ω - 10A TO-220 PowerMESH II MOSFET
N-CHANNEL 400V - 0.46Ω - 10A TO-220 PowerMESH II MOSFET TYPE V DSS R DS(on) I D IRF740 400 V < 0.55 Ω 10 A TYPICAL R DS (on) = 0.46Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE VERY
N-channel enhancement mode MOS transistor
FEATURES SYMBOL QUICK REFERENCE DATA Very low threshold voltage d V DS = V Fast switching Logic level compatible I D =.5 A Subminiature surface mount package R DS(ON) 5 mω (V GS =.5 V) g s V GS(TO).4 V
MC14001B Series. B Suffix Series CMOS Gates MC14001B, MC14011B, MC14023B, MC14025B, MC14071B, MC14073B, MC14081B, MC14082B
MC4B Series BSuffix Series CMOS Gates MC4B, MC4B, MC4B, MC4B, MC4B, MC4B, MC4B, MC4B The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure
BC337, BC337-25, BC337-40. Amplifier Transistors. NPN Silicon. These are Pb Free Devices. http://onsemi.com. Features MAXIMUM RATINGS
BC337, BC337-25, BC337-4 Amplifier Transistors NPN Silicon Features These are PbFree Devices COLLECTOR MAXIMUM RATINGS Rating Symbol alue Unit 2 BASE Collector Emitter oltage CEO 45 dc Collector Base oltage
P-Channel 1.25-W, 1.8-V (G-S) MOSFET
Si5DS P-Channel.5-W,.-V (G-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).5 at V GS = -.5 V ±.5 -.7 at V GS = -.5 V ±. at V GS = -. V ± FEATURES Halogen-free According to IEC 9-- Available TrenchFET
Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l Advanced Process Technology l Surface Mount (IRF9Z34S) l Low-profile through-hole (IRF9Z34L) l 175 C Operating Temperature l Fast Switching l P- Channel l Fully Avalanche Rated Description Third Generation
Power MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) = 0.55 Q g (Max.) (nc) 63 Q gs (nc) 9.0 Q gd (nc) 3 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
3EZ6.2D5 Series. 3 Watt DO-41 Surmetic 30 Zener Voltage Regulators
EZ6.D Series Watt DO- Surmetic Zener Voltage Regulators This is a complete series of Watt Zener diodes with limits and excellent operating characteristics that reflect the superior capabilities of silicon-oxide
Features. (Note 1b) 1.2. (Note 1c) 1
NDS943 3V P-Channel PowerTrench MOSFET May NDS943 General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor s advanced PowerTrench process. It has been optimized for
Power MOSFET FEATURES. IRF540PbF SiHF540-E3 IRF540 SiHF540. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.077 Q g (Max.) (nc) 72 Q gs (nc) 11 Q gd (nc) 32 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET
STP6NK60Z - STP6NK60ZFP STB6NK60Z - STB6NK60Z-1 N-CHANNEL 600V - 1Ω - 6A TO-220/TO-220FP/D 2 PAK/I 2 PAK Zener-Protected SuperMESH Power MOSFET
STP6NK60Z - STP6NK60ZFP STB6NK60Z - STB6NK60Z-1 N-CHANNEL 600V - 1Ω - 6A TO-220/TO-220FP/D 2 PAK/I 2 PAK Zener-Protected SuperMESH Power MOSFET TYPE V DSS R DS(on) I D Pw STP6NK60Z STP6NK60ZFP STB6NK60Z
Lower Conduction Losses Low Thermal Resistance to PCB ( 0.5 C/W)
PD -97428 IRFH5020PbF HEXFET Power MOSFET V DS 200 V 55 m: R DS(on) max (@V GS = V) Q g (typical) 36 nc R G (typical).9 : I D (@T c(bottom) = 25 C) 43 A PQFN 5X6 mm Applications Secondary Side Synchronous
Power MOSFET FEATURES. IRF9640PbF SiHF9640-E3 IRF9640 SiHF9640
Power MOSFET PRODUCT SUMMARY V DS (V) 200 R DS(on) (Ω) = 10 V 0.50 Q g (Max.) (nc) 44 Q gs (nc) 7.1 Q gd (nc) 27 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S D
STP60NF06. N-channel 60V - 0.014Ω - 60A TO-220 STripFET II Power MOSFET. General features. Description. Internal schematic diagram.
N-channel 60V - 0.014Ω - 60A TO-220 STripFET II Power MOSFET General features Type V DSS R DS(on) I D STP60NF06 60V
SMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD - 94358 IRFB38N20D IRFS38N20D IRFSL38N20D HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 200V 0.054Ω 44A Benefits Low Gate-to-Drain Charge to Reduce
STP60NF06FP. N-channel 60V - 0.014Ω - 30A TO-220FP STripFET II Power MOSFET. General features. Description. Internal schematic diagram.
N-channel 60V - 0.014Ω - 30A TO-220FP STripFET II Power MOSFET General features Type V DSS R DS(on) I D STP60NF06FP 60V
C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description Advanced
Features. Symbol JEDEC TO-220AB
Data Sheet June 1999 File Number 2253.2 3A, 5V,.4 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching
1SMA5.0AT3G Series, SZ1SMA5.0AT3G Series. 400 Watt Peak Power Zener Transient Voltage Suppressors. Unidirectional
.AT3G Series, SZ.AT3G Series 4 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional The series is designed to protect voltage sensitive components from high voltage, high energy transients.
MPSA92, MPSA93. High Voltage Transistors. PNP Silicon. Pb Free Packages are Available* Features. http://onsemi.com MAXIMUM RATINGS MARKING DIAGRAM
MPSA92, High Voltage Transistors PNP Silicon Features PbFree Packages are Available* MAXIMUM RATINGS CollectorEmitter Voltage CollectorBase Voltage Rating Symbol Value Unit MPSA92 MPSA92 V CEO V CBO 200
PMPB15XN. 1. Product profile. 20 V, single N-channel Trench MOSFET 13 September 2012 Product data sheet. 1.1 General description
3 September 22 Product data sheet. Product profile. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN22MD-6 (SOT22) Surface-Mounted Device (SMD)
MC14008B. 4-Bit Full Adder
4-Bit Full Adder The MC4008B 4bit full adder is constructed with MOS PChannel and NChannel enhancement mode devices in a single monolithic structure. This device consists of four full adders with fast
STP10NK80ZFP STP10NK80Z - STW10NK80Z
STP10NK80ZFP STP10NK80Z - STW10NK80Z N-channel 800V - 0.78Ω - 9A - TO-220/FP-TO-247 Zener-protected supermesh TM MOSFET General features Type V DSS R DS(on) I D Pw STP10NK80Z 800V