BSN Description. 2. Features. 3. Applications. 4. Pinning information. N-channel enhancement mode field-effect transistor

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1 Rev June 2 Product specification. Description in a plastic package using TrenchMOS technology. Product availability: in SOT Features TrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount package. 3. Applications c c Relay driver High speed line driver Logic level translator. 4. Pinning information Table : Pinning - SOT23, simplified outline and symbol Pin Description Simplified outline Symbol gate (g) 2 source (s) 3 drain (d) 3 d 2 SOT23 3ab44 g 3ab3 s N-channel MOSFET. TrenchMOS is a trademark of Royal Philips Electronics.

2 5. Quick reference data Table 2: Quick reference data Symbol Parameter Conditions Typ Max Unit V DS drain-source voltage (DC) T j =25to5 C 5 V I D drain current (DC) T sp =25 C; V GS =V 73 ma P tot total power dissipation T sp =25 C.83 W T j junction temperature 5 C R DSon drain-source on-state resistance V GS = V; I D = ma Ω V GS =5V; I D = ma Ω 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 634). Symbol Parameter Conditions Min Max Unit V DS drain-source voltage (DC) T j =25to5 C 5 V V DGR drain-gate voltage (DC) T j =25to5 C; R GS =2kΩ 5 V V GS gate-source voltage (DC) ±2 V I D drain current (DC) T sp =25 C; V GS =V; 73 ma Figure 2 and 3 T sp = C; V GS =V;Figure 2 ma I DM peak drain current T sp =25 C; pulsed; t p µs;.7 A Figure 3 P tot total power dissipation T sp =25 C; Figure.83 W T stg storage temperature C T j operating junction temperature C Source-drain diode I S source (diode forward) current (DC) T sp =25 C 73 ma I SM peak source (diode forward) current T sp =25 C; pulsed; t p µs.7 A Product specification Rev June 2 2 of 3

3 2 3aa7 2 3aa25 I der (%) P der (%) T sp ( o C) T sp ( o C) P der = P tot % P tot ( 25 C ) V GS 5V I D I der = % I D25C ( ) Fig. Normalized total power dissipation as a function of solder point temperature. Fig 2. Normalized continuous drain current as a function of solder point temperature. 3aa49 I D (A) T sp = 25 o C R DSon = V DS / I D t p = µs µs - ms P t p δ = T D.C. ms ms -2 t p T t 2 V DS (V) Fig 3. T sp =25 C; I DM is single pulse. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. Product specification Rev June 2 3 of 3

4 7. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Conditions Value Unit R th(j-sp) thermal resistance from junction to solder point 7. Transient thermal impedance mounted on a metal clad substrate; Figure 4 R th(j-a) thermal resistance from junction to ambient mounted on a printed circuit board; minimum footprint 5 K/W 35 K/W 3 3aa47 Z th(j-sp) (K/W) 2 δ = P t p δ = T.2 single pulse t p T t t (s) p Fig 4. Mounted on a metal clad substrate. Transient thermal impedance from junction to solder point as a function of pulse duration. Product specification Rev June 2 4 of 3

5 8. Characteristics Table 5: Characteristics T j =25 C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit Static characteristics V (BR)DSS drain-source breakdown I D =µa; V GS =V voltage T j =25 C 5 75 V T j = 55 C 46 V V GS(th) gate-source threshold voltage I D = ma; V DS =V GS ; Figure 9 T j =25 C.4 V T j = 5 C.3 V T j = 55 C 3.5 V I DSS drain-source leakage current V DS = 4 V; V GS =V T j =25 C.. µa T j = 5 C µa I GSS gate-source leakage current V GS = ±2 V; V DS =V na R DSon drain-source on-state resistance V GS =V; I D = ma; Figure 7 and 8 T j =25 C Ω T j = 5 C 28 Ω V GS =5V; I D = ma; Figure 7 and 8 T j =25 C Ω Dynamic characteristics g fs forward transconductance V DS = V; I D = ma; 4 7 ms Figure C iss input capacitance V GS =V; V DS =V; 7 25 pf C oss output capacitance f = MHz; Figure pf C rss reverse transfer capacitance 4 8 pf t on turn-on time V DD = 2 V; R D = 8 Ω;.7 8 ns t off turn-off time V GS =V; R G =5Ω; R GS =5Ω 8 5 ns Source-drain diode V SD source-drain (diode forward) voltage I S = 8 ma; V GS =V; Figure V t rr reverse recovery time I S = 8 ma; 3 ns Q r recovered charge di S /dt = A/µs; V GS =V; V DS =25V 3 nc Product specification Rev June 2 5 of 3

6 I D (A).7.6 T j =25 o C V GS = V 3aa5 I D (A).8.7 V DS > I D X R DSon 3aa V.2 4V 3.5 V. 3V V DS (V) T j = 25 o C 5 o C V GS (V) Fig 5. T j =25 C Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 6. T j =25 C and 5 C; V DS I D R DSon Transfer characteristics: drain current as a function of gate-source voltage; typical values. R DSon (Ω) V 4 V 4.5 V 3aa52 T j = 25 o C V GS = V I D (A) 2.2 a aa T j ( o C) T j =25 C R a = DSon R DSon ( 25 C ) Fig 7. Drain-source on-state resistance as a function of drain current; typical values. Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. Product specification Rev June 2 6 of 3

7 2 V GS(th) (V).8.6 3aa38 - I D (A) -2 3aa min typ typ min T j ( o C) V GS (V) Fig 9. I D = ma; V DS =V GS T j =25 C; V DS =5V Gate-source threshold voltage as a function of junction temperature. Fig. Sub-threshold drain current as a function of gate-source voltage..3 g fs (S).25 V DS >I D XR DSon 3aa54 T j =25 o C 2 C iss, C oss, C rss (pf) 3aa o C C iss C oss I D (A) C rss - 2 V DS (V) T j =25 C and 5 C; V DS I D R DSon Fig. Forward transconductance as a function of drain current; typical values. V GS = V; f = MHz Fig 2. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. Product specification Rev June 2 7 of 3

8 I S (A).9.8 V GS =V 3aa o C T j =25 o C V SD (V) T j =25 C and 5 C; V GS =V Fig 3. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. Product specification Rev June 2 8 of 3

9 9. Package outline Plastic surface mounted package; 3 leads SOT23 D B E A X H E v M A 3 Q A A 2 c e b p w M B L p e detail X 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A max.. mm..9 b p c D E e e H E L p Q v w OUTLINE VERSION SOT23 REFERENCES IEC JEDEC EIAJ TO-236AB EUROPEAN PROJECTION ISSUE DATE Fig 4. SOT23. Product specification Rev June 2 9 of 3

10 . Revision history Table 6: Revision history Rev Date CPCN Description HZG33 Product specification; third version; supersedes _2 of Converted from VDMOS (Nijmegen) to TrenchMOS technology (Hazel Grove) Product specification; second version Product specification; initial version. Product specification Rev June 2 of 3

11 . Data sheet status Datasheet status Product status Definition [] Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Product specification Production This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. [] Please consult the most recently issued data sheet before initiating or completing a design. 2. Definitions 3. Disclaimers Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 634). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Life support These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified Philips Electronics N.V. 2 All rights reserved. Product specification Rev June 2 of 3

12 Philips Semiconductors - a worldwide company Argentina: see South America Australia: Tel , Fax Austria: Tel , Fax Belarus: Tel , Fax Belgium: see The Netherlands Brazil: see South America Bulgaria: Tel , Fax Canada: Tel China/Hong Kong: Tel , Fax Colombia: see South America Czech Republic: see Austria Denmark: Tel , Fax Finland: Tel , Fax France: Tel , Fax Germany: Tel , Fax Hungary: see Austria India: Tel , Fax Indonesia: see Singapore Ireland: Tel , Fax Israel: Tel , Fax Italy: Tel , Fax Japan: Tel , Fax Korea: Tel , Fax Malaysia: Tel , Fax Mexico: Tel Middle East: see Italy For all other countries apply to: Philips Semiconductors, Marketing Communications, Building BE, P.O. Box 28, 56 MD EINDHOVEN, The Netherlands, Fax Netherlands: Tel , Fax New Zealand: Tel , Fax Norway: Tel , Fax Philippines: Tel , Fax Poland: Tel , Fax Portugal: see Spain Romania: see Italy Russia: Tel , Fax Singapore: Tel , Fax Slovakia: see Austria Slovenia: see Italy South Africa: Tel , Fax South America: Tel , Fax Spain: Tel , Fax Sweden: Tel , Fax Switzerland: Tel , Fax Taiwan: Tel , Fax Thailand: Tel , Fax Turkey: Tel , Fax Ukraine: Tel , Fax United Kingdom: Tel , Fax United States: Tel Uruguay: see South America Vietnam: see Singapore Yugoslavia: Tel , Fax Internet: (SCA7) Product specification Rev June 2 2 of 3

13 Contents Description Features Applications Pinning information Quick reference data Limiting values Thermal characteristics Transient thermal impedance Characteristics Package outline Revision history Data sheet status Definitions Disclaimers Philips Electronics N.V. 2. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 26 June 2 Document order number:

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