Vdc. Vdc. Adc. W W/ C T J, T stg 65 to C

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1 2N6284 (NPN); 2N6286, Preferred Device Darlington Complementary Silicon Power Transistors These packages are designed for general purpose amplifier and low frequency switching applications. Features High DC Current I C = 1 Adc h FE = 24 (Typ) 2N6284 = 4 (Typ) 2N6287 Collector Emitter Sustaining Voltage V CEO(sus) = (Min) Monolithic Construction with Built In Base Emitter Shunt Resistors Pb Free Packages are Available* MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit Collector Emitter Voltage 2N6286 2N6284/87 V CEO 8 Collector Base Voltage 2N6286 2N6284/87 V CB 8 Emitter Base Voltage V EB 5. Collector Current Continuous Peak I C 2 4 Adc Base Current I B Adc Total Power T C = Derate above Operating and Storage Temperature Range P D W W/ C T J, T stg 65 to + 2 C THERMAL CHARACTERISTICS (Note 1) Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R JC 9 C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Indicates JEDEC Registered Data. 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS VOLTS, 16 WATTS 2 1 TO 24AA (TO 3) CASE 1 7 STYLE 1 2N628x G A YY WW MEX MARKING DIAGRAM 2N628xG AYYWW MEX = Device Code x = 4, 6 or 7 = Pb Free Package = Location Code = Year = Work Week = Country of Orgin ORDERING INFORMATION Device Package Shipping 2N6284 TO 3 Units/Tray 2N6284G BASE 1 COLLECTOR CASE EMITTER 2 TO 3 (Pb Free) Units/Tray 2N6286 TO 3 Units/Tray 2N6286G TO 3 (Pb Free) Units/Tray 2N6287 TO 3 Units/Tray *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 2N6287G TO 3 (Pb Free) Units/Tray Semiconductor Components Industries, LLC, 28 September, 28 Rev. 4 1 Publication Order Number: 2N6284/D

2 16 PD, POWER DISSIPATION (WATTS) T C, CASE TEMPERATURE ( C) Figure 1. Power Derating Î ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) (Note 2) Î Characteristic Symbol Min Max Î Unit OFF CHARACTERISTICS Î Collector Emitter Sustaining Voltage V CEO(sus) (I C =.1 Adc, I B = ) 2N N6284, 2N6287ÎÎ Î Collector Cutoff Current I CEO Î madc (V CE = 4, I B = ) ÎÎ Î (V CE = 5, I B = ) Î Collector Cutoff Current I (V CE = Rated V CB, V BE(off) = 1.5 ) CEX madc Î (V CE = Rated V CB, V BE(off) = 1.5, T C = 15 C) 5. ÎÎ Emitter Cutoff Current (V BE = 5., I C I EBO Î 2. madc = ) Î ON CHARACTERISTICS (Note 3) Î DC Current Gain h FE (I C = 1 Adc, V CE = ) ÎÎ 75 Î 18, (I C = 2 Adc, V CE = ) Î Collector Emitter Saturation Voltage V (I C = 1 Adc, I B = 4 madc) CE(sat) 2. (I C = 2 Adc, I B = 2 madc) ÎÎ Î Base Emitter On Voltage V BE(on) Î 2.8 (I C = 1 Adc, V CE = ) Î Base Emitter Saturation Voltage V (I C = 2 Adc, I B = 2 madc) BE(sat) 4. Î DYNAMIC CHARACTERISTICS Î Magnitude of Common Emitter Small Signal Short Circuit h fe 4. MHz Forward Current Transfer Ratio (I C = 1 Adc, V CE =, f = MHz) ÎÎ Output Capacitance C ob pf (V CB = 1, I E =, f =.1 MHz) 2N6284ÎÎ Î 4 2N6286, 2N Î Small Signal Current Gain h (I C = 1 Adc, V CE =, f = khz) fe 3 Î 2. Indicates JEDEC Registered Data. 3. Pulse test: Pulse Width = 3 s, Duty Cycle = 2% 2

3 R B & R C VARIED TO OBTAIN DESIRED CURRENT LEVELS V 2 APPROX + 8. V V 1 D 1 MUST BE FAST RECOVERY TYPE e.g., 1N5825 USED ABOVE I B ma MSD6 USED BELOW I B ma APPROX 25 s - 12 V t r, t f 1 ns DUTY CYCLE = % 51 R B D 1 TUT 8. k 5 V CC - 3 V R C SCOPE + 4. V FOR t d AND t r, D 1 IS DISCONNECTED AND V 2 = FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES Figure 2. Switching Times Test Circuit t, TIME ( s) μ t s t f 2N6284 (NPN).3 V CC = 3 I.2 C /I B = 25 I B1 = I B2 T t V BE(off) = V.1 J = Figure 3. Switching Times t r r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = SINGLE PULSE R JC (t) = r(t) R JC R JC = 9 C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t 1 T J(pk) - T C = P (pk) R JC (t) P (pk) t 1 t 2 DUTY CYCLE, D = t 1 /t t, TIME OR PULSE WIDTH (ms) Figure 4. Thermal Response 3

4 ACTIVE REGION SAFE OPERATING AREA IC, COLLECTOR CURRENT (AMP) ms ms ms T J = 2 C 5. ms dc SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMAL T C = SINGLE PULSE V CE, COLLECTOR-EMITTER VOLTAGE (VOLTS) There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C V CE limits of the transistor that must be observed for reliable operation; i.e. the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 2 C; T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 1% provided T J(pk) < 2 C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Figure 5. 2N6284, 2N6287 hfe, SMALL-SIGNAL CURRENT GAIN 1, N6284 (NPN) f, FREQUENCY (khz) V CE = I C = 1 A Figure 6. Small Signal Current Gain 7 C, CAPACITANCE (PF) C ib C ob.1.2 2N6284 (NPN) V R, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance 4

5 NPN 2N6284 PNP 2N6287 hfe, DC CURRENT GAIN 2, 1, V CE = V T J = 15 C - 55 C h FE, DC CURRENT GAIN 3, 2, 1, T J = 15 C Figure 8. DC Current Gain V CE = V - 55 C VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 2.6 I C = 5. A 1 A 15 A V CE, COLLECTOR EMITTER VOLTAGE (VOLTS) 2.6 I C = 5. A 1 A 15 A I B, BASE CURRENT (ma) I B, BASE CURRENT (ma) Figure 9. Collector Saturation Region V, VOLTAGE (VOLTS) V I C /I B = 25 V, VOLTAGE (VOLTS) V I C /I B = 25 V V CE = V V V CE = V V I C /I B = 25 V I C /I B = Figure 1. On Voltages 5

6 NPN 2N6284 PNP 2N6287 V, TEMPERATURE COEFFICIENTS (mv/ C) θ *APPLIES FOR I C /I B h VCE V 25 to 15 C - 55 C to + - * V C for V - CE(sat) * V C for V CE(sat) to + 15 C to + 15 C - - V B for V V BE B for V BE C to C to V, TEMPERATURE COEFFICIENTS (mv/ C) θ *APPLIES FOR I C /I B Figure 11. Temperature Coefficients h VCE V 25 to 15 C - 55 C to +, COLLECTOR CURRENT ( A) μ IC V CE = 3 V T J = 15 C C REVERSE FORWARD V BE, BASE-EMITTER VOLTAGE (VOLTS) REVERSE , COLLECTOR CURRENT ( A) μ IC V CE = 3 V T J = 15 C C Figure 12. Collector Cut Off Region FORWARD V BE, BASE-EMITTER VOLTAGE (VOLTS) NPN 2N6284 COLLECTOR PNP 2N6287 COLLECTOR BASE BASE 8. k 6 8. k 6 EMITTER EMITTER Figure 13. Darlington Schematic 6

7 PACKAGE DIMENSIONS TO 24 (TO 3) CASE 1 7 ISSUE Z V H E 2 1 A N U C T SEATING PLANE D 2 PL K.13 (.5) M T Q M Y M L G Y Q.13 (.5) M T B Y M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-24AA OUTLINE SHALL APPLY. INCHES MILLIMETERS DIM MIN MAX MIN MAX A 1.55 REF REF B C D E G.43 BSC 1.92 BSC H.215 BSC 5.46 BSC K L.665 BSC BSC N Q U BSC 3.15 BSC V STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 8217 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative 2N6284/D

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