C Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )

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1 PD B INSULATED GATE BIPOLAR TRANSISTOR IRG4PC50W Features Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve efficiency of all power supply topologies 50% reduction of Eoff parameter Low IGBT conduction losses Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability Benefits Lower switching losses allow more cost-effective operation than power MOSFETs up to 50 khz ("hard switched" mode) Of particular benefit to single-ended converters and boost PFC topologies 50W and higher Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >300 khz) Absolute Maximum Ratings Parameter Max. Units V CES Collector-to-Emitter Breakdown Voltage 600 V I T C = 25 C Continuous Collector Current 55 I T C = 0 C Continuous Collector Current 27 A I CM Pulsed Collector Current 220 I LM Clamped Inductive Load Current 220 V GE Gate-to-Emitter Voltage ± 20 V E ARV Reverse Voltage Avalanche Energy ƒ 70 mj P T C = 25 C Maximum Power Dissipation 200 P T C = 0 C Maximum Power Dissipation 78 W T J Operating Junction and -55 to + 50 T STG Storage Temperature Range C Soldering Temperature, for seconds 300 (0.063 in. (.6mm from case ) Mounting torque, 6-32 or M3 screw. lbf in (.N m) Thermal Resistance G C E n-channel TO-247AC V CES = 600V V CE(on) max. = I C = 27A Parameter Typ. Max. Units R θjc Junction-to-Case 0.64 R θcs Case-to-Sink, Flat, Greased Surface 0.24 C/W R θja Junction-to-Ambient, typical socket mount 40 Wt Weight 6 (0.2) g (oz) 2/7/2000

2 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)CES Collector-to-Emitter Breakdown Voltage 600 V V GE = 0V, I C = 250µA V (BR)CES Emitter-to-Collector Breakdown Voltage 8 V V GE = 0V, I C =.0A V (BR)CES / T J Temperature Coeff. of Breakdown Voltage 0.4 V/ C V GE = 0V, I C = 5.0mA I C = 27A V CE(ON) Collector-to-Emitter Saturation Voltage 2.25 I C = 55A See Fig.2, 5 V.7 I C = 27A, T J = 50 C V GE(th) Gate Threshold Voltage V CE = V GE, I C = 250µA V GE(th) / T J Temperature Coeff. of Threshold Voltage - mv/ C V CE = V GE, I C =.0mA g fe Forward Transconductance 27 4 S V CE = 0 V, I C = 27A 250 V GE = 0V, V CE = 600V I CES Zero Gate Voltage Collector Current µa 2.0 V GE = 0V, V CE = V, T J = 25 C 5000 V GE = 0V, V CE = 600V, T J = 50 C I GES Gate-to-Emitter Leakage Current ±0 na V GE = ±20V Switching T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge (turn-on) I C = 27A Q ge Gate - Emitter Charge (turn-on) nc V CC = 400V See Fig.8 Q gc Gate - Collector Charge (turn-on) t d(on) Turn-On Delay Time 46 t r Rise Time 33 T J = 25 C ns t d(off) Turn-Off Delay Time I C = 27A, V CC = 480V t f Fall Time 57 86, R G = 5.0Ω E on Turn-On Switching Loss 0.08 Energy losses include "tail" E off Turn-Off Switching Loss 0.32 mj See Fig. 9,, 4 E ts Total Switching Loss t d(on) Turn-On Delay Time 3 T J = 50 C, t r Rise Time 43 I C = 27A, V CC = 480V ns t d(off) Turn-Off Delay Time 2, R G = 5.0Ω t f Fall Time 62 Energy losses include "tail" E ts Total Switching Loss.4 mj See Fig.,, 4 L E Internal Emitter Inductance 3 nh Measured 5mm from package C ies Input Capacitance 3700 V GE = 0V C oes Output Capacitance 260 pf V CC = 30V See Fig. 7 C res Reverse Transfer Capacitance 68 ƒ =.0MHz Notes: Repetitive rating; V GE = 20V, pulse width limited by max. junction temperature. ( See fig. 3b ) V CC = 80%(V CES ), V GE = 20V, L = µh, R G = 5.0Ω, (See fig. 3a) ƒ Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 80µs; duty factor 0.%. Pulse width 5.0µs, single shot. 2

3 Load Current ( A ) Square wave: 60% of rated voltage For both: Duty cycle: 50% T J = 25 C T sink = 90 C Gate drive as specified Power Dissipation = 40W Triangular wave: Clamp voltage: 80% of rated 20 Ideal diodes 0 A f, Frequency (khz) Fig. - Typical Load Current vs. Frequency (Load Current = I RMS of fundamental) I C, Collector-to-Emitter Current (A) 0 T J = 50 C T J = 25 C 20µs PULSE WIDTH V CE, Collector-to-Emitter Voltage (V) I C, Collector-to-Emitter Current (A) 0 T = 50 J C T J = 25 C V CC = 50V 5µs PULSE WIDTH V GE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics 3

4 Maximum DC Collector Current(A) V CE, Collector-to-Emitter Voltage(V) us PULSE WIDTH I C = I C = 54 A 27 A I C = 3.5 A T C, Case Temperature ( C) T J, Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thjc ) SINGLE PULSE (THERMAL RESPONSE) Notes:. Duty factor D = t / t2 2. Peak T J = PDM x Z thjc + TC t, Rectangular Pulse Duration (sec) PDM t t2 Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4

5 C, Capacitance (pf) VGE = 0V, f = MHz Cies = Cge + Cgc, C ce Cres = Cgc Coes = Cce + Cgc C ies C oes C res SHORTED V GE, Gate-to-Emitter Voltage (V) V CC = 400V I C = 27A 0 0 V CE, Collector-to-Emitter Voltage (V) Q G, Total Gate Charge (nc) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Total Switching Losses (mj) V CC = 480V T = 25 J C I C = 27A Total Switching Losses (mj) R G = Ohm 5.0Ω V CC = 480V I C = I C = 54A 27A I C = 3.5A R R G G,, Gate Resistance ((Ohm) Ω ) T J, Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. - Typical Switching Losses vs. Junction Temperature 5

6 Total Switching Losses (mj) 3.0 R G T J = Ohm 5.0Ω = 50 C V CC = 480V I C, Collector-to-emitter Current (A) I C, Collector-to-Emitter Current (A) 00 0 V GE = 20V T = 25 o J C SAFE OPERATING AREA 0 00 V CE, Collector-to-Emitter Voltage (V) Fig. - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 2 - Turn-Off SOA 6

7 50V 00V L V * C D.U.T V 480µF 960V R L = 480V 4 X I C * Driver same ty pe as D.U.T.; Vc = 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor w ill increase to obtain rated Id. Fig. 3a - Clamped Inductive Load Test Circuit Fig. 3b - Pulsed Collector Current Test Circuit I C 50V 00V L Driver* D.U.T. V C ƒ Fig. 4a - Switching Loss Test Circuit * Driver same type as D.U.T., VC = 480V 90% ƒ % V C 90% t d(off) Fig. 4b - Switching Loss Waveforms I C 5% % t d(on) t r E on t f E off t=5µs E ts = (E on +E off ) 7

8 Case Outline and Dimensions TO-247AC * (.800) 9.70 (.775) 4.80 (.583) 4.20 (.559) 2.40 (.094) 2.00 (.079) 2X 5.45 (.25) 2X 5.90 (.626) 5.30 (.602) - B (.056) 3X.00 (.039) 0.25 (.0) M C A S 3.40 (.33) 3.00 (.8) 3.65 (.43) 3.55 (.40) 0.25 (.0) M D - A (.27) 2X - C (.70) 3.70 (.45) 5.50 (.27) 4.50 (.77) B M - D (.209) 4.70 (.85) 2.50 (.089).50 (.059) (.03) 3X 0.40 (.06) 2.60 (.2) 2.20 (.087) NOTES: DIMENSIONS & TOLERANCING PER ANSI Y4.5M, CONTROLLING DIMENSION : INCH. 3 DIM ENSIONS ARE SHO W N M ILLIM ETER S (INCHES). 4 CO NFO RM S TO JEDEC O UTLINE TO-247AC. LEAD ASSIGNMENTS - GATE 2 - COLLECTO R 3 - EM ITTER 4 - COLLECTO R * LONGER LEADED (20mm) VERSION AVAILABLE (TO-247AD) TO ORDER ADD "-E" SUFFIX TO PART NUMBER CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P) Dimensions in Millimeters and (Inches) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (3) IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: (0) IR CANADA: 5 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) IR GERMANY: Saalburgstrasse 57, 6350 Bad Homburg Tel: (0) IR ITALY: Via Liguria 49, 07 Borgaro, Torino Tel: IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 7 Tel: 8 (0) IR SOUTHEAST ASIA: Kim Seng Promenade, Great World City West Tower, 3-, Singapore Tel: (0) IR TAIWAN:6 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 673 Tel: 886-(0) Data and specifications subject to change without notice. 6/00 8

9 Note: For the most current drawings please refer to the IR website at:

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