TO-220AB contribute to its wide acceptance throughout the industry.

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1 l LogicLevel Gate rive l dvanced Process Technology l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated escription Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. G P 9.370C IRL3705N HEXFET Power MOSFET S V SS = 55V R S(on) = 0.0Ω I = 89 The TO220 package is universally preferred for all commercialindustrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO220 TO220B contribute to its wide acceptance throughout the industry. bsolute Maximum Ratings Parameter Max. Units T C = 25 C Continuous rain Current, V V 89 T C = C Continuous rain Current, V V 63 I M Pulsed rain Current 3 C = 25 C Power issipation 70 W Linear erating Factor. W/ C V GS GatetoSource Voltage ± 6 V E S Single Pulse valanche Energy 340 mj I R valanche Current 46 E R Repetitive valanche Energy 7 mj dv/dt Peak iode Recovery dv/dt ƒ 5.0 V/ns T J Operating Junction and 55 to 75 T STG Storage Temperature Range C Soldering Temperature, for seconds 300 (.6mm from case ) Mounting torque, 632 or M3 srew lbf in (.N m) Thermal Resistance Parameter Typ. Max. Units R θjc JunctiontoCase 0.90 R θcs CasetoSink, Flat, Greased Surface 0.50 C/W R θj Junctiontombient 62 8/25/97

2 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS raintosource Breakdown Voltage 55 V V GS = 0V, I = 250µ V (BR)SS / T J Breakdown Voltage Temp. Coefficient V/ C Reference to 25 C, I = m 0.0 V GS = V, I = 46 R S(on) Static raintosource OnResistance 0.02 Ω V GS = 5.0V, I = V GS = 4.0V, I = 39 V GS(th) Gate Threshold Voltage V V S = V GS, I = 250µ g fs Forward Transconductance 50 S V S = 25V, I = 46 I SS raintosource Leakage Current 25 V S = 55V, V GS = 0V µ 250 V S = 44V, V GS = 0V, T J = 50 C I GSS GatetoSource Forward Leakage V GS = 6V n GatetoSource Reverse Leakage V GS = 6V Q g Total Gate Charge 98 I = 46 Q gs GatetoSource Charge 9 nc V S = 44V Q gd Gatetorain ("Miller") Charge 49 V GS = 5.0V, See Fig. 6 and 3 t d(on) TurnOn elay Time 2 V = 28V t r Rise Time 40 I ns = 46 t d(off) TurnOff elay Time 37 R G =.8Ω, V GS = 5.0V t f Fall Time 78 R = 0.59Ω, See Fig. L Internal rain Inductance 4.5 nh Between lead, 6mm (0.25in.) L S Internal Source Inductance 7.5 G from package and center of die contact C iss Input Capacitance 3600 V GS = 0V C oss Output Capacitance 870 pf V S = 25V C rss Reverse Transfer Capacitance 320 ƒ =.0MHz, See Fig. 5 S Sourcerain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol (Body iode) 89 showing the G I SM Pulsed Source Current integral reverse 3 (Body iode) pn junction diode. S V S iode Forward Voltage.3 V T J = 25 C, I S = 46, V GS = 0V t rr Reverse Recovery Time ns T J = 25 C, I F = 46 Q rr Reverse RecoveryCharge nc di/dt = /µs t on Forward TurnOn Time Intrinsic turnon time is negligible (turnon is dominated by L S L ) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. ) V = 25V, starting T J = 25 C, L = 320µH R G = 25Ω, I S = 46. (See Figure 2) ƒ I S 46, di/dt 250/µs, V V (BR)SS, T J 75 C Pulse width 300µs; duty cycle 2%. Calculated continuous current based on maximum allowable junction temperature; for recommended currenthandling of the package refer to esign Tip # 934

3 I, raintosource Current () VGS TOP 5V 2V V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V 2.5V 20µs PULSE WITH T J = 25 C 0. V S, raintosource Voltage (V) I, raintosource Current () VGS TOP 5V 2V V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V 2.5V 20µs PULSE WITH T J = 75 C 0. V S, raintosource Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics I, raintos ource C urrent ( ) T = 25 C J V S= 25V 20µs PULSE W ITH V GS T = 75 C J, GatetoSource Voltage (V) R S(on), raintos ource On Resistance (Normalized) I = 77 V GS = V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized OnResistance Vs. Temperature

4 C, Capacitance (pf) C is s C oss C rss V GS = 0V, f = MHz C iss = C gs C gd, C ds SHORTE C rss = C gd C oss = C ds C gd 0 V S, raintosource Voltage (V) V, GatetoSource V oltage (V ) GS I = 46 V S = 44V V S = 28V FOR TEST CIRCUIT 0 SEE FIGURE Q, Total Gate Charge (nc) G Fig 5. Typical Capacitance Vs. raintosource Voltage Fig 6. Typical Gate Charge Vs. GatetoSource Voltage I S, Reverse rain Current () T = 75 C J T = 25 C J I, rain Current () OPE RTION IN THIS RE LIMITE BY RS(on) µs µs ms ms V GS = 0V V S, Sourcetorain Voltage (V) T C = 25 C T J = 75 C Single Pulse V S, raintosource Voltage (V) Fig 7. Typical Sourcerain iode Forward Voltage Fig 8. Maximum Safe Operating rea

5 LIMITE BY PCKGE V S R I, rain Current () T C, Case Temperature ( C) Fig 9. Maximum rain Current Vs. Case Temperature Fig a. Switching Time Test Circuit V S 90% R G V GS 5.0V Pulse Width µs uty Factor 0. %.U.T. % V GS t d(on) t r t d(off) t f Fig b. Switching Time Waveforms V Thermal Response (Z thjc ) 0. = SINGLE PULSE (THERML RESPONSE) Notes:. uty factor = t / t Peak T J = P M x Z thjc TC t, Rectangular Pulse uration (sec) PM t t2 Fig. Maximum Effective Transient Thermal Impedance, JunctiontoCase

6 R G V S V tp L.U.T IS 0.0Ω Fig 2a. Unclamped Inductive Test Circuit tp 5V RIVER V (BR)SS V E S, Single Pulse valanche Energy (mj) TOP BOTTOM V = 25V Starting T J, Junction Temperature ( C) Fig 2c. Maximum valanche Energy Vs. rain Current I I S Fig 2b. Unclamped Inductive Waveforms Current Regulator Same Type as.u.t. 50KΩ Q G 2V.2µF.3µF 5.0 V Q GS Q G.U.T. V S V GS V G 3m Charge I G I Current Sampling Resistors Fig 3a. Basic Gate Charge Waveform Fig 3b. Gate Charge Test Circuit

7 Peak iode Recovery dv/dt Test Circuit.U.T ƒ Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer R G dv/dt controlled by R G river same type as.u.t. I S controlled by uty Factor "".U.T. evice Under Test V river Gate rive Period P.W. = P.W. Period V GS =V *.U.T. I S Waveform Reverse Recovery Current Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt V Repplied Voltage Inductor Curent Body iode Forward rop Ripple 5% I S * V GS = 5V for Logic Level evices Fig 4. For NChannel HEXFETS

8 Package Outline TO220B Outline imensions are shown in millimeters (inches) 2.87 (.3) 2.62 (.3) (.4 5) (.40 5) 3.78 (.4 9) 3.54 (.3 9) 4.69 (.85) 4.20 (.65) B.32 (.052).22 (.048) 5.24 (.600) 4.84 (.584) (.25 5) 6. 0 (.24 0) (.0 4 5) M IN LE SSIGNMENTS G TE 2 R IN 3 SOURCE 4 R IN 4.09 (.555) 3.47 (.530) (.6 0) (.4 0).40 (.055) 3X.5 (.045) 2.54 (.) 2X 3X 0.93 (.037) 0.69 (.027) (.0 4) M B M 3X (.02 2) (.0 8) 2.92 (.5) 2.64 (.4) NOTES: IM E N S IO N IN G & TO L ER N C IN G P ER N S I Y 4.5 M, O U TL IN E C O N FO R M S TO JE E C OU T LIN E TO 2 20 B. 2 CONTR OLLING IMENSION : INCH 4 HETSIN K & LE M ESUREMENTS O NOT INCLUE BU RRS. Part Marking Information TO220B EXMPLE : THIS : THIS IS IS N N IRF WITH WITH SSEMBLY LOT LOT COE COE 9BM 9BM INTERNTIONL RECTIFIER LOGO LOGO SSEMBLY LOT LOT COE COE IRF B 9B M M PRT PRT NUMBER TE TE COE COE (YYWW) YY YY = YER = YER WW WW = WEEK = WEEK WORL HEQURTERS: 233 Kansas St., El Segundo, California 90245, Tel: (3) EUROPEN HEQURTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: IR CN: 732 Victoria Park ve., Suite 20, Markham, Ontario L3R 2Z8, Tel: (905) IR GERMNY: Saalburgstrasse 57, 6350 Bad Homburg Tel: IR ITLY: Via Liguria 49, 7 Borgaro, Torino Tel: IR FR EST: K&H Bldg., 2F, 304 NishiIkebukuro 3Chome, ToshimaKu, Tokyo Japan 7 Tel: IR SOUTHEST SI: 35 Outram Road, #02 Tan Boon Liat Building, Singapore 036 Tel: ata and specifications subject to change without notice. 8/97

9 Note: For the most current drawings please refer to the IR website at:

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