Trench gate field-stop IGBT, M series 650 V, 10 A low loss. Features. Description

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1 Trench gate field-stop IGBT, M series 650 V, 10 A low loss Datasheet - production data TAB D2PAK 1 3 Features 6 µs of short-circuit withstand time VCE(sat) = 1.55 V IC = 10 A Tight parameter distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diode Applications Motor control UPS PFC Figure 1: Internal schematic diagram Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represents an optimum compromise in performance to maximize the efficiency of inverter systems where low loss and short-circuit capability are essential. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. Table 1: Device summary Order code Marking Package Packing STGB10M65DF2 G10M65DF2 D²PAK Tape and reel October 2015 DocID Rev 5 1/20 This is information on a product in full production.

2 Contents STGB10M65DF2 Contents 1 Electrical ratings Electrical characteristics Electrical characteristics (curves) Test circuits Package information D²PAK package information D²PAK packing information Revision history /20 DocID Rev 5

3 Electrical ratings 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VCES Collector-emitter voltage (VGE = 0) 650 V IC Continuous collector current at TC = 25 C 20 A Continuous collector current at TC = 100 C 10 ICP (1) Pulsed collector current 40 A VGE Gate-emitter voltage ± 20 V IF Continuous forward current at TC = 25 C 20 A Continuous forward current at TC = 100 C 10 IFP (1) Pulsed forward current 40 A PTOT Total dissipation at TC = 25 C 115 W TSTG Storage temperature range - 55 to 150 TJ Operating junction temperature - 55 to 175 C Notes: (1) Pulse width limited by maximum junction temperature. Table 3: Thermal data Symbol Parameter Value Unit RthJC Thermal resistance junction-case IGBT 1.3 RthJC Thermal resistance junction-case diode 2.08 C/W RthJA Thermal resistance junction-ambient 62.5 DocID Rev 5 3/20

4 Electrical characteristics STGB10M65DF2 2 Electrical characteristics TC = 25 C unless otherwise specified Table 4: Static characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)CES VCE(sat) VF Collector-emitter breakdown voltage Collector-emitter saturation voltage Forward on-voltage VGE = 0 V, IC = 2 ma 650 V VGE = 15 V, IC = 10 A VGE = 15 V, IC = 10 A, TJ = 125 C VGE = 15 V, IC = 10 A, TJ = 175 C IF = 10 A 1.5 IF = 10 A, TJ = 125 C 1.3 IF = 10 A, TJ = 175 C 1.2 VGE(th) Gate threshold voltage VCE = VGE, IC = 250 µa V ICES Collector cut-off current VGE = 0 V, VCE = 650 V 25 µa IGES Gate-emitter leakage current VCE = 0 V, VGE = ± 20 V 250 µa V V Table 5: Dynamic characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit Cies Coes Cres Qg Qge Qgc Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge VCE= 25 V, f = 1 MHz, VGE = 0 V VCC = 520 V, IC = 10 A, VGE = 15 V (see Figure 30: " Gate charge test circuit") pf nc Table 6: IGBT switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr (di/dt)on td(off) Turn-on delay time Current rise time Turn-on current slope Turn-off-delay time VCE = 400 V, IC = 10 A, VGE = 15 V, RG = 22 Ω (see Figure 29: " Test circuit for inductive load switching" ) ns ns A/µs ns 4/20 DocID Rev 5

5 Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit tf Eon (1) Eoff (2) Ets td(on) tr (di/dt)on td(off) tf Eon Eoff Ets tsc Notes: Current fall time Turn-on switching losses Turn-off switching losses Total switching losses Turn-on delay time Current rise time Turn-on current slope Turn-off-delay time Current fall time Turn-on switching losses Turn-off switching losses Total switching losses Short-circuit withstand time VCE = 400 V, IC = 10 A, VGE = 15 V, RG = 22 Ω TJ = 175 C (see Figure 29: " Test circuit for inductive load switching" ) (1) Energy losses include reverse recovery of the diode. (2) Turn-off losses also include the tail of the collector current ns mj mj mj ns ns A/µs ns ns mj mj mj VCC 400 V, VGE = 15 V, TJstart = 150 C 6 - µs Table 7: Diode switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit trr Qrr Irrm dirr/dt Reverse recovery time Reverse recovery charge Reverse recovery current Peak rate of fall of reverse recovery current during tb IF = 10 A, VR = 400 V, VGE = 15 V (see Figure 29: " Test circuit for inductive load switching") di/dt = 1000 A/µs - 96 ns nc - 13 A A/µs DocID Rev 5 5/20

6 Electrical characteristics STGB10M65DF2 Symbol Parameter Test conditions Min. Typ. Max. Unit Err trr Qrr Irrm dirr/dt Err Reverse recovery energy Reverse recovery time Reverse recovery charge Reverse recovery current Peak rate of fall of reverse recovery current during tb Reverse recovery energy IF = 10 A, VR = 400 V, VGE = 15 V TJ = 175 C (see Figure 29: " Test circuit for inductive load switching") di/dt = 1000 A/µs - 52 µj ns nc - 19 A A/µs µj 6/20 DocID Rev 5

7 2.1 Electrical characteristics (curves) Figure 2: Power dissipation vs. case temperature Electrical characteristics Figure 3: Collector current vs. case temperature Figure 4: Output characteristics (TJ = 25 C) Figure 5: Output characteristics (TJ = 175 C) Figure 6: VCE(sat) vs. junction temperature Figure 7: VCE(sat) vs. collector current DocID Rev 5 7/20

8 Electrical characteristics Figure 8: Collector current vs. switching frequency STGB10M65DF2 Figure 9: Forward bias safe operating area Figure 10: Transfer characteristics Figure 11: Diode VF vs. forward current Figure 12: Normalized VGE(th) vs. junction temperature Figure 13: Normalized V(BR)CES vs. junction temperature 8/20 DocID Rev 5

9 Figure 14: Capacitance variations Electrical characteristics Figure 15: Gate charge vs. gate-emitter voltage Figure 16: Switching loss vs. collector current Figure 17: Switching loss vs. gate resistance Figure 18: Switching loss vs. temperature Figure 19: Switching loss vs. collector emitter voltage DocID Rev 5 9/20

10 Electrical characteristics Figure 20: Short-circuit time and current vs. VGE STGB10M65DF2 Figure 21: Switching times vs. collector current Figure 22: Switching times vs. gate resistance Figure 23: Reverse recovery current vs. diode current slope Figure 24: Reverse recovery time vs. diode current slope Figure 25: Reverse recovery charge vs. diode current slope 10/20 DocID Rev 5

11 Figure 26: Reverse recovery energy vs. diode current slope Electrical characteristics K δ=0.5 Figure 27: Thermal impedance for IGBT ZthTO2T_B Zth=k Rthj-c δ=tp/t 10-2 Single pulse tp(s) tp t DocID Rev 5 11/20

12 Electrical characteristics Figure 28: Thermal impedance for diode STGB10M65DF2 12/20 DocID Rev 5

13 Test circuits 3 Test circuits Figure 29: Test circuit for inductive load switching Figure 30: Gate charge test circuit V CC G + - C E R G A B A B G L=100 µf C 3.3 µf E D.U.T 1000 µf V CC V i V GMAX 2200 µf 12 V 47 kω 100 nf I G =CONST 100 Ω 2.7 kω 47 kω 1 kω D.U.T. V G P W 1 kω AM01504v 1 AM01505v1 Figure 31: Switching waveform Figure 32: Diode reverse recovery waveform di/dt Q rr t rr I F t s t f I RRM I RRM 10% t V RRM dv/dt AM01507v1 DocID Rev 5 13/20

14 Package information STGB10M65DF2 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. 4.1 D²PAK package information Figure 33: D²PAK (TO-263) type A package outline _A_rev22 14/20 DocID Rev 5

15 Dim. Package information Table 8: D²PAK (TO-263) type A package mechanical data mm Min. Typ. Max. A A b b c c D D D E E E e 2.54 e H J L L L R 0.4 V2 0 8 DocID Rev 5 15/20

16 Package information Figure 34: D²PAK (TO-263) recommended footprint (dimensions are in mm) STGB10M65DF2 16/20 DocID Rev 5

17 4.2 D²PAK packing information Figure 35: Tape outline Package information DocID Rev 5 17/20

18 Package information Figure 36: Reel outline STGB10M65DF2 Table 9: D²PAK tape and reel mechanical data Tape Reel Dim. mm mm Dim. Min. Max. Min. Max. A A 330 B B 1.5 D C D D 20.2 E G F N 100 K T 30.4 P P Base quantity 1000 P Bulk quantity 1000 R 50 T W /20 DocID Rev 5

19 Revision history 5 Revision history Table 10: Document revision history Date Revision Changes 10-Feb First release. 23-Apr Minor text edits throughout document In Section 2 Electrical characteristics: - updated Table 4: Static characteristics - updated Table 5: Dynamic characteristics - updated Table 6: IGBT switching characteristics (inductive load) - updated Table 7: Diode switching characteristics (inductive load) Added Section 2.1 Electrical characteristics (curves) 11-Jun Document status promoted from preliminary to production data. 31-Jul Updated table titled: "Diode switching characteristics (inductive load)". 20-Oct Updated Table 5: "Dynamic characteristics" and Table 6: "IGBT switching characteristics (inductive load)". Updated Figure 8: "Collector current vs. switching frequency". DocID Rev 5 19/20

20 IMPORTANT NOTICE PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document STMicroelectronics All rights reserved 20/20 DocID Rev 5

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