AUTOMOTIVE GRADE. Base part number Package Type Standard Pack Complete Part Number

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1 AUTOMOTIVE GRADE AUIRFS845 AUIRFSL845 Features l Advanced Process Technology l New Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and wide variety of other applications. Applications l Electric Power Steering (EPS) l Battery Switch l Start/Stop Micro Hybrid l Heavy Loads l DC-DC Applications G D S D V DSS S D G D 2 Pak AUIRFS845 HEXFET Power MOSFET R DS(on) typ. max. I D (Silicon Limited) I D (Package Limited) D S D G TO-262 AUIRFSL845 G D S Gate Drain Source 4V 1.9mΩ 2.3mΩ 193Ac 12A Base part number Package Type Standard Pack Complete Part Number Form Quantity AUIRFSL845 TO-262 Tube 5 AUIRFSL845 AUIRFS845 D2Pak Tube 5 AUIRFS845 Tape and Reel Left 8 AUIRFS845TRL Tape and Reel Right 8 AUIRFS845TRR Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T A ) is 25 C, unless otherwise specified. Symbol Parameter Max. Units I T C = 25 C Continuous Drain Current, V V (Silicon Limited) 193c I T C = C Continuous Drain Current, V V (Silicon Limited) 137c I T C = 25 C Continuous Drain Current, V V (Package Limited) 12 A I DM Pulsed Drain Current d 94 P C = 25 C Maximum Power Dissipation 163 W Linear Derating Factor 1.1 W/ C V GS Gate-to-Source Voltage ± 2 V T J Operating Junction and -55 to T STG Storage Temperature Range Soldering Temperature, for seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw 3 lbfx in (1.1Nx m) C HEXFET is a registered trademark of International Rectifier. *Qualification standards can be found at 1

2 Avalanche Characteristics E AS (Thermally limited) Single Pulse Avalanche Energy e E AS (tested) Single Pulse Avalanche Energy Tested Value l I AR Avalanche Currentd See Fig. 14, 15, 24a, 24b A E AR Repetitive Avalanche Energy d mj Thermal Resistance Symbol Parameter Typ. Max. Units R θjc Junction-to-Case kl.92 C/W R θja Junction-to-Ambient (PCB Mount) j 4 T J = 25 C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V (BR)DSS Drain-to-Source Breakdown Voltage 4 V V (BR)DSS / T J Breakdown Voltage Temp. Coefficient.26 V/ C R DS(on) Static Drain-to-Source On-Resistance mω V GS(th) Gate Threshold Voltage V I DSS I GSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage 1. Gate-to-Source Reverse Leakage 15 - µa na R G Internal Gate Resistance 2.3 Ω T J = 25 C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units gfs Forward Transconductance S Q g Total Gate Charge Q gs Gate-to-Source Charge 29 Q gd Gate-to-Drain ("Miller") Charge 39 Q sync Total Gate Charge Sync. (Q g - Q gd ) 68 t d(on) Turn-On Delay Time 14 t r Rise Time 128 t d(off) Turn-Off Delay Time 55 t f Fall Time 77 C iss Input Capacitance 5193 C oss Output Capacitance 754 C rss Reverse Transfer Capacitance 519 C oss eff. (ER) Effective Output Capacitance (Energy Related) 878 C oss eff. (TR) Effective Output Capacitance (Time Related) 1225 nc ns pf Conditions V GS = V, I D = 25µA Reference to 25 C, I D = 1.mAd V GS = V, I D = A g V DS = V GS, I D = µa V DS = 4V, V GS = V V DS = 4V, V GS = V, T J = 125 C V GS = 2V V GS = -2V Conditions V DS = V, I D = A I D = A mj V DS =2V V GS = V g I D = A, V DS =V, V GS = V V DD = 26V I D = A R G = 2.7Ω V GS = V g V GS = V V DS = 25V ƒ = 1. MHz, See Fig. 5 V GS = V, V DS = V to 32V i, See Fig. 11 V GS = V, V DS = V to 32V h 2

3 Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current MOSFET symbol 193c (Body Diode) showing the A G I SM Pulsed Source Current integral reverse 94 S (Body Diode)Ãd p-n junction diode. V SD Diode Forward Voltage V T J = 25 C, I S = A, V GS = V g dv/dt Peak Diode Recovery f 1.7 V/ns T J = 175 C, I S = A, V DS = 4V t rr Reverse Recovery Time 44 T J = 25 C V R = 34V, ns 45 T J = 125 C I F = A Q rr Reverse Recovery Charge 44 T J = 25 C di/dt = A/µs g nc 46 T J = 125 C I RRM Reverse Recovery Current 1.9 A T J = 25 C t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 12A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-114) Repetitive rating; pulse width limited by max. junction temperature. ƒ Limited by T Jmax, starting T J = 25 C, L =.36mH, R G = 5Ω, I AS = A, V GS =V. Part not recommended for use above this value. I SD A, di/dt 1295A/µs, V DD V (BR)DSS, T J 175 C. Pulse width 4µs; duty cycle 2%. C oss eff. (TR) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from to 8% V DSS. C oss eff. (ER) is a fixed capacitance that gives the same energy as C oss while V DS is rising from to 8% V DSS. ˆ When mounted on 1" square PCB (FR-4 or G- Material). For recommended footprint and soldering techniques refer to application note #AN-994. R θ is measured at T J approximately 9 C. Š R θjc value shown is at time zero. 3

4 C, Capacitance (pf) V GS, Gate-to-Source Voltage (V) I D, Drain-to-Source Current (A) R DS(on), Drain-to-Source On Resistance (Normalized) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) AUIRFS/SL845 VGS TOP 15V V 8.V 7.V 6.V 5.5V 5.V BOTTOM 4.5V VGS TOP 15V V 8.V 7.V 6.V 5.5V 5.V BOTTOM 4.5V 4.5V 6µs PULSE WIDTH Tj = 25 C V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 4.5V 6µs PULSE WIDTH Tj = 175 C.1 1 V DS, Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics I D = A V GS = V T J = 175 C T J = 25 C V DS = V 6µs PULSE WIDTH V GS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics T J, Junction Temperature ( C) Fig 4. Normalized On-Resistance vs. Temperature V GS = V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd C iss I D = A V DS = 32V V DS = 2V C oss C rss V DS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Q G, Total Gate Charge (nc) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 4

5 Energy (µj) E AS, Single Pulse Avalanche Energy (mj) V (BR)DSS, I D, Drain Current (A) Drain-to-Source Breakdown Voltage (V) I SD, Reverse Drain Current (A) I D, Drain-to-Source Current (A) AUIRFS/SL845 OPERATION IN THIS AREA LIMITED BY R DS (on) T J = 175 C 1msec µsec T J = 25 C Limited by package msec V GS = V V SD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Limited By Package 1 Tc = 25 C DC Tj = 175 C Single Pulse V DS, Drain-to-Source Voltage (V) 5 48 Fig 8. Maximum Safe Operating Area Id = 1.mA T C, Case Temperature ( C) Fig 9. Maximum Drain Current vs. Case Temperature T J, Temperature ( C ) Fig. Drain-to-Source Breakdown Voltage I D TOP 17A 36A BOTTOM A V DS, Drain-to-Source Voltage (V) Starting T J, Junction Temperature ( C) Fig 11. Typical C OSS Stored Energy Fig 12. Maximum Avalanche Energy vs. DrainCurrent

6 E AR, Avalanche Energy (mj) Avalanche Current (A) AUIRFS/SL845 Thermal Response ( Z thjc ) C/W 1 D = SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc.1 1E-6 1E t 1, Rectangular Pulse Duration (sec) Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 15 C and Tstart =25 C (Single Pulse).1.5. Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Τj = 25 C and Tstart = 15 C. 1 1.E-6 1.E-5 1.E-4 1.E-3 1.E-2 1.E-1 tav (sec) Fig 14. Typical Avalanche Current vs.pulsewidth TOP Single Pulse BOTTOM 1.% Duty Cycle I D = A Notes on Repetitive Avalanche Curves, Figures 14, 15 (For further info, see AN-5 at 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long ast jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 24a, 24b. 4. P D (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. I av = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed T jmax (assumed as 25 C in Figure 14, 15). t av = Average time in avalanche. D = Duty cycle in avalanche = t av f Z thjc (D, t av ) = Transient thermal resistance, see Figures 13) Fig 15. Maximum Avalanche Energy vs. Temperature Starting T J, Junction Temperature ( C) P D (ave) = 1/2 ( 1.3 BV I av ) = DT/ Z thjc I av = 2DT/ [1.3 BV Z th ] E AS (AR) = P D (ave) t av

7 I RRM (A) Q RR (nc) I RRM (A) Q RR (nc) R DS(on), Drain-to -Source On Resistance (m Ω) V GS(th), Gate threshold Voltage (V) AUIRFS/SL I D = A T J = 125 C I D = µa I D = 1.mA I D = 1.A T J = 25 C V GS, Gate -to -Source Voltage (V) T J, Temperature ( C ) Fig 16. On-Resistance vs. Gate Voltage Fig 17. Threshold Voltage vs. Temperature I F = 6A 2 I F = 6A 8 V R = 34V T J = 25 C T J = 125 C 15 V R = 34V T J = 25 C T J = 125 C di F /dt (A/µs) Fig Typical Recovery Current vs. di f /dt di F /dt (A/µs) Fig Typical Stored Charge vs. di f /dt 12 I F = A 2 I F = A 8 V R = 34V T J = 25 C T J = 125 C 15 V R = 34V T J = 25 C T J = 125 C di F /dt (A/µs) di F /dt (A/µs) Fig. 2 - Typical Recovery Current vs. di f /dt Fig Typical Stored Charge vs. di f /dt

8 R DS (on), Drain-to -Source On Resistance ( mω) AUIRFS/SL V GS = 5.5V V GS = 6.V V GS = 7.V V GS = 8.V V GS =V I D, Drain Current (A) Fig 22. Typical On-Resistance vs. Drain Current 8

9 + - D.U.T + ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - + Reverse Recovery Current Driver Gate Drive Period P.W. D.U.T. I SD Waveform Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt D = P.W. Period V GS =V V DD * R G dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD + - Re-Applied Voltage Body Diode Inductor Curent Current Forward Drop Ripple 5% I SD * V GS = 5V for Logic Level Devices Fig 23. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs 15V tp V (BR)DSS V DS L DRIVER R G 2V V GS tp D.U.T IAS.1Ω + - V DD A I AS Fig 24a. Unclamped Inductive Test Circuit Fig 24b. Unclamped Inductive Waveforms V DS R D V DS V GS D.U.T. 9% R G + - V DD VV GS Pulse Width 1 µs Duty Factor.1 % % V GS t d(on) t r t d(off) t f Fig 25a. Switching Time Test Circuit Fig 25b. Switching Time Waveforms Current Regulator Same Type as D.U.T. Vds Id 5KΩ Vgs 12V.2µF.3µF V GS D.U.T. + V - DS Vgs(th) 3mA I G I D Current Sampling Resistors Qgs1 Qgs2 Qgd Qgodr 9 Fig 26a. Gate Charge Test Circuit Fig 26b. Gate Charge Waveform

10 D 2 Pak (TO-263AB) Package Outline Dimensions are shown in millimeters (inches) D 2 Pak (TO-263AB) Part Marking Information Part Number IR Logo AUIRFS845 YWWA XX or XX Date Code Y= Year WW= Work Week A= Automotive, LeadFree Lot Code Note: For the most current drawing please refer to IR website at

11 TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information Part Number IR Logo AUIRFSL845 YWWA XX or XX Date Code Y= Year WW= Work Week A= Automotive, LeadFree Lot Code Note: For the most current drawing please refer to IR website at 11

12 D 2 Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.6 (.63) 1.5 (.59) 4. (.161) 3.9 (.153) 1.6 (.63) 1.5 (.59).368 (.145).342 (.135) FEED DIRECTION 1.85 (.73) 1.65 (.65) 11.6 (.457) 11.4 (.449) (.69) (.61) 24.3 (.957) 23.9 (.941) TRL.9 (.429).7 (.421) 16. (.634) 15.9 (.626) 1.75 (.69) 1.25 (.49) 4.72 (.136) 4.52 (.178) FEED DIRECTION 13.5 (.532) 12.8 (.54) 27.4 (1.79) 23.9 (.941) (14.173) MAX. 6. (2.362) MIN. NOTES : 1. COMFORMS TO EIA CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION HUB. 4. INCLUDES FLANGE OUTER EDGE (1.39) 24.4 (.961) (1.197) MAX. 4 12

13 Qualification Information Qualification Level Automotive (per AEC-Q1) Comments: This part number(s) passed Automotive qualification. IR s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. ESD RoHS Compliant TO-262 N/A D 2 PAK MSL1 Machine Model Class M3 (+/- 4V) AEC-Q1-2 Human Body Model Class H1C (+/- 2V) AEC-Q1-1 Charged Device Model Class C5 (+/- 2V) AEC-Q1-5 Yes Qualification standards can be found at International Rectifier s web site: http// Highest passing voltage. 13

14 IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the AU prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR s terms and conditions of sale supplied at the time of order acknowledgment. IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions. Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements. IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product. Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of Defense, are designed and manufactured to meet DLA military specifications required by certain military, aerospace or other applications. Buyers acknowledge and agree that any use of IR products not certified by DLA as military-grade, in applications requiring military grade products, is solely at the Buyer s own risk and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are designated by IR as compliant with ISO/TS requirements and bear a part number including the designation AU. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements. For technical support, please contact IR s Technical Assistance Center WORLD HEADQUARTERS: 1 N. Sepulveda Blvd., El Segundo, California 9245 Tel: (3)