AUTOMOTIVE GRADE. Base part number Package Type Standard Pack Complete Part Number

Size: px
Start display at page:

Download "AUTOMOTIVE GRADE. Base part number Package Type Standard Pack Complete Part Number"

Transcription

1 AUTOMOTIVE GRADE AUIRFS845 AUIRFSL845 Features l Advanced Process Technology l New Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and wide variety of other applications. Applications l Electric Power Steering (EPS) l Battery Switch l Start/Stop Micro Hybrid l Heavy Loads l DC-DC Applications G D S D V DSS S D G D 2 Pak AUIRFS845 HEXFET Power MOSFET R DS(on) typ. max. I D (Silicon Limited) I D (Package Limited) D S D G TO-262 AUIRFSL845 G D S Gate Drain Source 4V 1.9mΩ 2.3mΩ 193Ac 12A Base part number Package Type Standard Pack Complete Part Number Form Quantity AUIRFSL845 TO-262 Tube 5 AUIRFSL845 AUIRFS845 D2Pak Tube 5 AUIRFS845 Tape and Reel Left 8 AUIRFS845TRL Tape and Reel Right 8 AUIRFS845TRR Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T A ) is 25 C, unless otherwise specified. Symbol Parameter Max. Units I T C = 25 C Continuous Drain Current, V V (Silicon Limited) 193c I T C = C Continuous Drain Current, V V (Silicon Limited) 137c I T C = 25 C Continuous Drain Current, V V (Package Limited) 12 A I DM Pulsed Drain Current d 94 P C = 25 C Maximum Power Dissipation 163 W Linear Derating Factor 1.1 W/ C V GS Gate-to-Source Voltage ± 2 V T J Operating Junction and -55 to T STG Storage Temperature Range Soldering Temperature, for seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw 3 lbfx in (1.1Nx m) C HEXFET is a registered trademark of International Rectifier. *Qualification standards can be found at 1

2 Avalanche Characteristics E AS (Thermally limited) Single Pulse Avalanche Energy e E AS (tested) Single Pulse Avalanche Energy Tested Value l I AR Avalanche Currentd See Fig. 14, 15, 24a, 24b A E AR Repetitive Avalanche Energy d mj Thermal Resistance Symbol Parameter Typ. Max. Units R θjc Junction-to-Case kl.92 C/W R θja Junction-to-Ambient (PCB Mount) j 4 T J = 25 C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V (BR)DSS Drain-to-Source Breakdown Voltage 4 V V (BR)DSS / T J Breakdown Voltage Temp. Coefficient.26 V/ C R DS(on) Static Drain-to-Source On-Resistance mω V GS(th) Gate Threshold Voltage V I DSS I GSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage 1. Gate-to-Source Reverse Leakage 15 - µa na R G Internal Gate Resistance 2.3 Ω T J = 25 C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units gfs Forward Transconductance S Q g Total Gate Charge Q gs Gate-to-Source Charge 29 Q gd Gate-to-Drain ("Miller") Charge 39 Q sync Total Gate Charge Sync. (Q g - Q gd ) 68 t d(on) Turn-On Delay Time 14 t r Rise Time 128 t d(off) Turn-Off Delay Time 55 t f Fall Time 77 C iss Input Capacitance 5193 C oss Output Capacitance 754 C rss Reverse Transfer Capacitance 519 C oss eff. (ER) Effective Output Capacitance (Energy Related) 878 C oss eff. (TR) Effective Output Capacitance (Time Related) 1225 nc ns pf Conditions V GS = V, I D = 25µA Reference to 25 C, I D = 1.mAd V GS = V, I D = A g V DS = V GS, I D = µa V DS = 4V, V GS = V V DS = 4V, V GS = V, T J = 125 C V GS = 2V V GS = -2V Conditions V DS = V, I D = A I D = A mj V DS =2V V GS = V g I D = A, V DS =V, V GS = V V DD = 26V I D = A R G = 2.7Ω V GS = V g V GS = V V DS = 25V ƒ = 1. MHz, See Fig. 5 V GS = V, V DS = V to 32V i, See Fig. 11 V GS = V, V DS = V to 32V h 2

3 Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current MOSFET symbol 193c (Body Diode) showing the A G I SM Pulsed Source Current integral reverse 94 S (Body Diode)Ãd p-n junction diode. V SD Diode Forward Voltage V T J = 25 C, I S = A, V GS = V g dv/dt Peak Diode Recovery f 1.7 V/ns T J = 175 C, I S = A, V DS = 4V t rr Reverse Recovery Time 44 T J = 25 C V R = 34V, ns 45 T J = 125 C I F = A Q rr Reverse Recovery Charge 44 T J = 25 C di/dt = A/µs g nc 46 T J = 125 C I RRM Reverse Recovery Current 1.9 A T J = 25 C t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 12A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-114) Repetitive rating; pulse width limited by max. junction temperature. ƒ Limited by T Jmax, starting T J = 25 C, L =.36mH, R G = 5Ω, I AS = A, V GS =V. Part not recommended for use above this value. I SD A, di/dt 1295A/µs, V DD V (BR)DSS, T J 175 C. Pulse width 4µs; duty cycle 2%. C oss eff. (TR) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from to 8% V DSS. C oss eff. (ER) is a fixed capacitance that gives the same energy as C oss while V DS is rising from to 8% V DSS. ˆ When mounted on 1" square PCB (FR-4 or G- Material). For recommended footprint and soldering techniques refer to application note #AN-994. R θ is measured at T J approximately 9 C. Š R θjc value shown is at time zero. 3

4 C, Capacitance (pf) V GS, Gate-to-Source Voltage (V) I D, Drain-to-Source Current (A) R DS(on), Drain-to-Source On Resistance (Normalized) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) AUIRFS/SL845 VGS TOP 15V V 8.V 7.V 6.V 5.5V 5.V BOTTOM 4.5V VGS TOP 15V V 8.V 7.V 6.V 5.5V 5.V BOTTOM 4.5V 4.5V 6µs PULSE WIDTH Tj = 25 C V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 4.5V 6µs PULSE WIDTH Tj = 175 C.1 1 V DS, Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics I D = A V GS = V T J = 175 C T J = 25 C V DS = V 6µs PULSE WIDTH V GS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics T J, Junction Temperature ( C) Fig 4. Normalized On-Resistance vs. Temperature V GS = V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd C iss I D = A V DS = 32V V DS = 2V C oss C rss V DS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Q G, Total Gate Charge (nc) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 4

5 Energy (µj) E AS, Single Pulse Avalanche Energy (mj) V (BR)DSS, I D, Drain Current (A) Drain-to-Source Breakdown Voltage (V) I SD, Reverse Drain Current (A) I D, Drain-to-Source Current (A) AUIRFS/SL845 OPERATION IN THIS AREA LIMITED BY R DS (on) T J = 175 C 1msec µsec T J = 25 C Limited by package msec V GS = V V SD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Limited By Package 1 Tc = 25 C DC Tj = 175 C Single Pulse V DS, Drain-to-Source Voltage (V) 5 48 Fig 8. Maximum Safe Operating Area Id = 1.mA T C, Case Temperature ( C) Fig 9. Maximum Drain Current vs. Case Temperature T J, Temperature ( C ) Fig. Drain-to-Source Breakdown Voltage I D TOP 17A 36A BOTTOM A V DS, Drain-to-Source Voltage (V) Starting T J, Junction Temperature ( C) Fig 11. Typical C OSS Stored Energy Fig 12. Maximum Avalanche Energy vs. DrainCurrent

6 E AR, Avalanche Energy (mj) Avalanche Current (A) AUIRFS/SL845 Thermal Response ( Z thjc ) C/W 1 D = SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc.1 1E-6 1E t 1, Rectangular Pulse Duration (sec) Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 15 C and Tstart =25 C (Single Pulse).1.5. Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Τj = 25 C and Tstart = 15 C. 1 1.E-6 1.E-5 1.E-4 1.E-3 1.E-2 1.E-1 tav (sec) Fig 14. Typical Avalanche Current vs.pulsewidth TOP Single Pulse BOTTOM 1.% Duty Cycle I D = A Notes on Repetitive Avalanche Curves, Figures 14, 15 (For further info, see AN-5 at 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long ast jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 24a, 24b. 4. P D (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. I av = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed T jmax (assumed as 25 C in Figure 14, 15). t av = Average time in avalanche. D = Duty cycle in avalanche = t av f Z thjc (D, t av ) = Transient thermal resistance, see Figures 13) Fig 15. Maximum Avalanche Energy vs. Temperature Starting T J, Junction Temperature ( C) P D (ave) = 1/2 ( 1.3 BV I av ) = DT/ Z thjc I av = 2DT/ [1.3 BV Z th ] E AS (AR) = P D (ave) t av

7 I RRM (A) Q RR (nc) I RRM (A) Q RR (nc) R DS(on), Drain-to -Source On Resistance (m Ω) V GS(th), Gate threshold Voltage (V) AUIRFS/SL I D = A T J = 125 C I D = µa I D = 1.mA I D = 1.A T J = 25 C V GS, Gate -to -Source Voltage (V) T J, Temperature ( C ) Fig 16. On-Resistance vs. Gate Voltage Fig 17. Threshold Voltage vs. Temperature I F = 6A 2 I F = 6A 8 V R = 34V T J = 25 C T J = 125 C 15 V R = 34V T J = 25 C T J = 125 C di F /dt (A/µs) Fig Typical Recovery Current vs. di f /dt di F /dt (A/µs) Fig Typical Stored Charge vs. di f /dt 12 I F = A 2 I F = A 8 V R = 34V T J = 25 C T J = 125 C 15 V R = 34V T J = 25 C T J = 125 C di F /dt (A/µs) di F /dt (A/µs) Fig. 2 - Typical Recovery Current vs. di f /dt Fig Typical Stored Charge vs. di f /dt

8 R DS (on), Drain-to -Source On Resistance ( mω) AUIRFS/SL V GS = 5.5V V GS = 6.V V GS = 7.V V GS = 8.V V GS =V I D, Drain Current (A) Fig 22. Typical On-Resistance vs. Drain Current 8

9 + - D.U.T + ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - + Reverse Recovery Current Driver Gate Drive Period P.W. D.U.T. I SD Waveform Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt D = P.W. Period V GS =V V DD * R G dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD + - Re-Applied Voltage Body Diode Inductor Curent Current Forward Drop Ripple 5% I SD * V GS = 5V for Logic Level Devices Fig 23. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs 15V tp V (BR)DSS V DS L DRIVER R G 2V V GS tp D.U.T IAS.1Ω + - V DD A I AS Fig 24a. Unclamped Inductive Test Circuit Fig 24b. Unclamped Inductive Waveforms V DS R D V DS V GS D.U.T. 9% R G + - V DD VV GS Pulse Width 1 µs Duty Factor.1 % % V GS t d(on) t r t d(off) t f Fig 25a. Switching Time Test Circuit Fig 25b. Switching Time Waveforms Current Regulator Same Type as D.U.T. Vds Id 5KΩ Vgs 12V.2µF.3µF V GS D.U.T. + V - DS Vgs(th) 3mA I G I D Current Sampling Resistors Qgs1 Qgs2 Qgd Qgodr 9 Fig 26a. Gate Charge Test Circuit Fig 26b. Gate Charge Waveform

10 D 2 Pak (TO-263AB) Package Outline Dimensions are shown in millimeters (inches) D 2 Pak (TO-263AB) Part Marking Information Part Number IR Logo AUIRFS845 YWWA XX or XX Date Code Y= Year WW= Work Week A= Automotive, LeadFree Lot Code Note: For the most current drawing please refer to IR website at

11 TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information Part Number IR Logo AUIRFSL845 YWWA XX or XX Date Code Y= Year WW= Work Week A= Automotive, LeadFree Lot Code Note: For the most current drawing please refer to IR website at 11

12 D 2 Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.6 (.63) 1.5 (.59) 4. (.161) 3.9 (.153) 1.6 (.63) 1.5 (.59).368 (.145).342 (.135) FEED DIRECTION 1.85 (.73) 1.65 (.65) 11.6 (.457) 11.4 (.449) (.69) (.61) 24.3 (.957) 23.9 (.941) TRL.9 (.429).7 (.421) 16. (.634) 15.9 (.626) 1.75 (.69) 1.25 (.49) 4.72 (.136) 4.52 (.178) FEED DIRECTION 13.5 (.532) 12.8 (.54) 27.4 (1.79) 23.9 (.941) (14.173) MAX. 6. (2.362) MIN. NOTES : 1. COMFORMS TO EIA CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION HUB. 4. INCLUDES FLANGE OUTER EDGE (1.39) 24.4 (.961) (1.197) MAX. 4 12

13 Qualification Information Qualification Level Automotive (per AEC-Q1) Comments: This part number(s) passed Automotive qualification. IR s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. ESD RoHS Compliant TO-262 N/A D 2 PAK MSL1 Machine Model Class M3 (+/- 4V) AEC-Q1-2 Human Body Model Class H1C (+/- 2V) AEC-Q1-1 Charged Device Model Class C5 (+/- 2V) AEC-Q1-5 Yes Qualification standards can be found at International Rectifier s web site: http//www.irf.com/ Highest passing voltage. 13

14 IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the AU prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR s terms and conditions of sale supplied at the time of order acknowledgment. IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions. Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements. IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product. Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of Defense, are designed and manufactured to meet DLA military specifications required by certain military, aerospace or other applications. Buyers acknowledge and agree that any use of IR products not certified by DLA as military-grade, in applications requiring military grade products, is solely at the Buyer s own risk and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are designated by IR as compliant with ISO/TS requirements and bear a part number including the designation AU. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements. For technical support, please contact IR s Technical Assistance Center WORLD HEADQUARTERS: 1 N. Sepulveda Blvd., El Segundo, California 9245 Tel: (3)

W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery e 38. V/ns T J. mj I AR

W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery e 38. V/ns T J. mj I AR PD 967 IRFB465PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D S V DSS HEXFET

More information

W/ C V GS Gate-to-Source Voltage ± 16 dv/dt Peak Diode Recovery e 21

W/ C V GS Gate-to-Source Voltage ± 16 dv/dt Peak Diode Recovery e 21 PD 97369 IRLB43PbF Applications l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits

More information

AUIRF6218S AUIRF6218L

AUIRF6218S AUIRF6218L AUTOMOTIVE GRADE AUIRF6218S AUIRF6218L Features Advanced Planar Technology Low On-Resistance P-Channel MOSFET Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive

More information

IRF1324SPbF IRF1324LPbF

IRF1324SPbF IRF1324LPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche

More information

Base Part Number Package Type Standard Pack Orderable Part Number. IRFP4868PbF TO-247AC Tube 25 IRFP4868PbF

Base Part Number Package Type Standard Pack Orderable Part Number. IRFP4868PbF TO-247AC Tube 25 IRFP4868PbF V DSS R DS(on) typ. max. I D 300V 25.5m 32m 70A Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits

More information

AUTOMOTIVE GRADE. W/ C V GS Gate-to-Source Voltage ± 20. mj I AR E AR

AUTOMOTIVE GRADE. W/ C V GS Gate-to-Source Voltage ± 20. mj I AR E AR AUTOMOTIVE GRADE PD - 97715A AUIRFS431Z Features Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax

More information

V DSS R DS(on) max Qg. 30V 3.2mΩ 36nC

V DSS R DS(on) max Qg. 30V 3.2mΩ 36nC PD - 96232 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification

More information

AUIRFR8405 AUIRFU8405

AUIRFR8405 AUIRFU8405 Features Advanced Process Technology New Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUTOMOTIVE

More information

AUTOMOTIVE GRADE. ) is 25 C, unless otherwise specified. 58 I T C = 100 C Continuous Drain Current, V 10V A I DM

AUTOMOTIVE GRADE. ) is 25 C, unless otherwise specified. 58 I T C = 100 C Continuous Drain Current, V 10V A I DM AUTOMOTIVE GRADE PD - 97766 Features l Advanced Planar Technology l Logic-Level Gate Drive l Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated

More information

C Soldering Temperature, for 10 seconds 300 (1.6mm from case )

C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description Advanced

More information

V DSS I D. W/ C V GS Gate-to-Source Voltage ±30 E AS (Thermally limited) mj T J Operating Junction and -55 to + 175

V DSS I D. W/ C V GS Gate-to-Source Voltage ±30 E AS (Thermally limited) mj T J Operating Junction and -55 to + 175 PD 973B IRFB432PbF Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits Benefits l Low

More information

W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 5.0. V/ns T J. mj I AR. Thermal Resistance Symbol Parameter Typ. Max.

W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 5.0. V/ns T J. mj I AR. Thermal Resistance Symbol Parameter Typ. Max. PD 9727 IRFP326PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits

More information

AUTOMOTIVE GRADE. A I DM Pulsed Drain Current 84 P A = 25 C Maximum Power Dissipation 3.8 P C = 25 C Maximum Power Dissipation 94

AUTOMOTIVE GRADE. A I DM Pulsed Drain Current 84 P A = 25 C Maximum Power Dissipation 3.8 P C = 25 C Maximum Power Dissipation 94 Features Advanced Planar Technology Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant

More information

W/ C V GS Gate-to-Source Voltage ±20 dv/dt Peak Diode Recovery f 4.6. V/ns T J. mj I AR. Avalanche Current d A See Fig. 14, 15, 22a, 22b, E AR

W/ C V GS Gate-to-Source Voltage ±20 dv/dt Peak Diode Recovery f 4.6. V/ns T J. mj I AR. Avalanche Current d A See Fig. 14, 15, 22a, 22b, E AR PD 97363 IRLB334PbF Applications l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits

More information

RoHS Compliant Containing no Lead, no Bromide and no Halogen. IRF9310PbF SO8 Tube/Bulk 95 IRF9310TRPbF SO8 Tape and Reel 4000

RoHS Compliant Containing no Lead, no Bromide and no Halogen. IRF9310PbF SO8 Tube/Bulk 95 IRF9310TRPbF SO8 Tape and Reel 4000 PD 97437A IRF93PbF HEXFET Power MOSFET V DS 30 V R DS(on) max (@V GS = V) I D (@T A = 25 C) 4. mω 20 A * SO8 Applications Charge and Discharge Switch for Notebook PC Battery Application Features and Benefits

More information

IRLR8729PbF IRLU8729PbF

IRLR8729PbF IRLU8729PbF Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits

More information

IRLR8743PbF IRLU8743PbF HEXFET Power MOSFET

IRLR8743PbF IRLU8743PbF HEXFET Power MOSFET Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free

More information

AUTOMOTIVE MOSFET. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )

AUTOMOTIVE MOSFET. C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) PD 9399A AUTOMOTIVE MOSFET Typical Applications Electric Power Steering (EPS) Antilock Braking System (ABS) Wiper Control Climate Control Power Door Benefits Advanced Process Technology Ultra Low OnResistance

More information

W/ C V GS Gate-to-Source Voltage ± 30 dv/dt Peak Diode Recovery e 18.5. V/ns T J. mj I AR

W/ C V GS Gate-to-Source Voltage ± 30 dv/dt Peak Diode Recovery e 18.5. V/ns T J. mj I AR PD 9675 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate,

More information

AUTOMOTIVE MOSFET. C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 1.1 (10) N m (lbf in)

AUTOMOTIVE MOSFET. C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 1.1 (10) N m (lbf in) PD -94424A Typical Applications 42 Volts Automotive Electrical Systems Features Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Automotive [Q]

More information

SMPS MOSFET. V DSS R DS(on) typ. I D

SMPS MOSFET. V DSS R DS(on) typ. I D Applications l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Absolute Maximum Ratings SMPS MOSFET Benefits l Low

More information

V DS 100 V R DS(ON) typ. @ 10V 72.5 m: Q g typ. 15 nc Q sw typ. 8.3 nc R G(int) typ. 2.2 Ω T J max 175 C

V DS 100 V R DS(ON) typ. @ 10V 72.5 m: Q g typ. 15 nc Q sw typ. 8.3 nc R G(int) typ. 2.2 Ω T J max 175 C PD 9698A DIGITAL AUDIO MOSFET IRFB422PbF Features Key parameters optimized for ClassD audio amplifier applications Low R DSON for improved efficiency Low Q G and Q SW for better THD and improved efficiency

More information

SMPS MOSFET. V DSS R DS(on) typ. Trr typ. I D. 600V 385mΩ 130ns 15A

SMPS MOSFET. V DSS R DS(on) typ. Trr typ. I D. 600V 385mΩ 130ns 15A Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications SMPS MOSFET PD - 9445A HEXFET Power MOSFET V DSS R DS(on) typ. Trr typ.

More information

W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 10. V/ns T J. mj I AR. Thermal Resistance Symbol Parameter Typ. Max.

W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 10. V/ns T J. mj I AR. Thermal Resistance Symbol Parameter Typ. Max. PD 9734 HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D

More information

SMPS MOSFET. V DSS R DS(on) max I D

SMPS MOSFET. V DSS R DS(on) max I D PD 94301A SMPS MOSFET IRFP90N20D HEXFET Power MOSFET Applications l High frequency DCDC converters Benefits Low GatetoDrain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective

More information

AUTOMOTIVE MOSFET. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )

AUTOMOTIVE MOSFET. C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) PD -93992A AUTOMOTIVE MOSFET IRF1405S IRF1405L Typical Applications Electric Power Steering (EPS) Anti-lock Braking System (ABS) Wiper Control Climate Control Power Door Benefits Advanced Process Technology

More information

AUTOMOTIVE MOSFET. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )

AUTOMOTIVE MOSFET. C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) PD -9458 Typical Applications 42 Volts Automotive Electrical Systems Electrical Power Steering (EPS) Integrated Starter Alternator Benefits Ultra Low On-Resistance Dynamic dv/dt Rating 75 C Operating Temperature

More information

D-Pak TO-252AA. I-Pak TO-251AA. 1

D-Pak TO-252AA. I-Pak TO-251AA.  1 l Ultra Low OnResistance l PChannel l Surface Mount (IRFR920N) l Straight Lead (IRFU920N) l Advanced Process Technology l Fast Switching G l Fully Avalanche Rated l LeadFree Description Fifth Generation

More information

V DSS R DS(on) typ. Trr typ. I D

V DSS R DS(on) typ. Trr typ. I D Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications Lead-Free SMPS MOSFET PD - 9570 HEXFET Power MOSFET V DSS R DS(on) typ.

More information

V DS min 230 V V DS (Avalanche) typ. 276 V R DS(ON) 10V 31 m: I RP T C = 100 C 114 A T J max 175 C

V DS min 230 V V DS (Avalanche) typ. 276 V R DS(ON) 10V 31 m: I RP T C = 100 C 114 A T J max 175 C PDP SWITCH PD - 974A IRFB4233PbF Features l Advanced process technology l Key parameters optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low E PULSE rating to reduce power dissipation

More information

AUTOMOTIVE MOSFET TO-220AB IRF540Z A I DM. 140 P C = 25 C Power Dissipation 92 Linear Derating Factor V GS Gate-to-Source Voltage ± 20

AUTOMOTIVE MOSFET TO-220AB IRF540Z A I DM. 140 P C = 25 C Power Dissipation 92 Linear Derating Factor V GS Gate-to-Source Voltage ± 20 Features Advanced Process Technology Ultra Low On-Resistance 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed for

More information

SMPS MOSFET. V DSS R DS(on) max I D

SMPS MOSFET. V DSS R DS(on) max I D SMPS MOSFET PD - 94358 IRFB38N20D IRFS38N20D IRFSL38N20D HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 200V 0.054Ω 44A Benefits Low Gate-to-Drain Charge to Reduce

More information

IRF530NS IRF530NL. HEXFET Power MOSFET V DSS = 100V. R DS(on) = 90mΩ I D = 17A

IRF530NS IRF530NL. HEXFET Power MOSFET V DSS = 100V. R DS(on) = 90mΩ I D = 17A l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Fully Avalanche Rated Description Advanced HEXFET Power MOSFETs from International

More information

IRLR8256PbF IRLU8256PbF HEXFET Power MOSFET

IRLR8256PbF IRLU8256PbF HEXFET Power MOSFET Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits

More information

AUTOMOTIVE GRADE. W/ C V GS Gate-to-Source Voltage ± 20. mj E AS (tested) -55 to T STG

AUTOMOTIVE GRADE. W/ C V GS Gate-to-Source Voltage ± 20. mj E AS (tested) -55 to T STG Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified

More information

TO-220AB. IRLZ44ZPbF. Max. I T C = 25 C Continuous Drain Current, V 10V (Silicon Limited) A I DM

TO-220AB. IRLZ44ZPbF. Max. I T C = 25 C Continuous Drain Current, V 10V (Silicon Limited) A I DM Features l Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET

More information

AUIRLR2905 AUIRLU2905

AUIRLR2905 AUIRLU2905 Features dvanced Planar Technology Logic Level Gate Drive Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Fully valanche Rated Repetitive valanche llowed up to Tjmax Lead-Free,

More information

V DSS. 40V R DS(on) typ. 1.1m max. 1.4m 259Ac. I D (Silicon Limited) I D (Package Limited) 100A. HEXFET Power MOSFET

V DSS. 40V R DS(on) typ. 1.1m max. 1.4m 259Ac. I D (Silicon Limited) I D (Package Limited) 100A. HEXFET Power MOSFET R DS(on), Drain-to -Source On Resistance (m ) I D, Drain Current (A) Applications l Brushed Motor drive applications l BLDC Motor drive applications l Battery powered circuits l Half-bridge and full-bridge

More information

V DSS R DS(on) max Qg. 30V GS = 10V 34nC. 160 P A = 25 C Power Dissipation 2.5 P A = 70 C Power Dissipation Linear Derating Factor

V DSS R DS(on) max Qg. 30V GS = 10V 34nC. 160 P A = 25 C Power Dissipation 2.5 P A = 70 C Power Dissipation Linear Derating Factor Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very Low R DS(on) at 4.5V V GS l Ultra-Low Gate

More information

IRFR3707Z IRFU3707Z HEXFET Power MOSFET

IRFR3707Z IRFU3707Z HEXFET Power MOSFET Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits

More information

C Soldering Temperature, for 10 seconds 300 (1.6mm from case )

C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) dvanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully valanche Rated Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced

More information

IRFR24N15D IRFU24N15D

IRFR24N15D IRFU24N15D Applications l High frequency DC-DC converters SMPS MOSFET PD - 94392 IRFR24N5D IRFU24N5D HEXFET Power MOSFET V DSS R DS(on) max I D 50V 95mΩ 24A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses

More information

V DSS Rds(on) max I D

V DSS Rds(on) max I D SMPS MOSFET Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l

More information

Lower Conduction Losses Low Thermal Resistance to PCB ( 0.5 C/W)

Lower Conduction Losses Low Thermal Resistance to PCB ( 0.5 C/W) PD -97428 IRFH5020PbF HEXFET Power MOSFET V DS 200 V 55 m: R DS(on) max (@V GS = V) Q g (typical) 36 nc R G (typical).9 : I D (@T c(bottom) = 25 C) 43 A PQFN 5X6 mm Applications Secondary Side Synchronous

More information

SMPS MOSFET. V DSS R DS(on) max I D. -150V GS = -10V -27A. -110 P C = 25 C Maximum Power Dissipation 250 Linear Derating Factor

SMPS MOSFET. V DSS R DS(on) max I D. -150V GS = -10V -27A. -110 P C = 25 C Maximum Power Dissipation 250 Linear Derating Factor pplications l Reset Switch for ctive Clamp Reset DC-DC converters SMPS MOSFET PD - 95862 HEXFET Power MOSFET V DSS R DS(on) max I D -150V 150m:@ = -V -27 Benefits l Low Gate to Drain Charge to Reduce Switching

More information

A I DM. W/ C V GS Gate-to-Source Voltage ± 20. Thermal Resistance Symbol Parameter Typ. Max. Units

A I DM. W/ C V GS Gate-to-Source Voltage ± 20. Thermal Resistance Symbol Parameter Typ. Max. Units V DS 2 V V GS Max ± 2 V R DSon) max @V GS = V) 24 m * PD - 9787A HEXFET Power MOSFET R DSon) max @V GS = 4.V) 4 m 6 Micro3 TM SOT-23) Applications) Load System Switch Features and Benefits Features Benefits

More information

IRF6201PbF. HEXFET Power MOSFET V DS 20 V. R DS(on) max. 2.75 mω. Q g (typical) 130 nc 27 A. Absolute Maximum Ratings

IRF6201PbF. HEXFET Power MOSFET V DS 20 V. R DS(on) max. 2.75 mω. Q g (typical) 130 nc 27 A. Absolute Maximum Ratings PD - 97500A IRF620PbF V DS 20 V HEXFET Power MOSFET R DS(on) max (@ = 4.5V) 2.45 mω 6 R DS(on) max (@ = 2.5V) 2.75 mω 6 6 Q g (typical) 30 nc * SO-8 I D (@T A = 25 C) 27 A Applications OR-ing or hot-swap

More information

91 P D @T C = 25 C Power Dissipation 330 P D @T C = 100 C Power Dissipation Linear Derating Factor

91 P D @T C = 25 C Power Dissipation 330 P D @T C = 100 C Power Dissipation Linear Derating Factor PD - 9778 IRFB4229PbF Features l dvanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch pplications l Low E PULSE Rating to Reduce Power Dissipation in PDP

More information

V DSS Rds(on) max I D

V DSS Rds(on) max I D Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate,

More information

IRF5305PbF. HEXFET Power MOSFET V DSS = -55V. R DS(on) = 0.06Ω I D = -31A

IRF5305PbF. HEXFET Power MOSFET V DSS = -55V. R DS(on) = 0.06Ω I D = -31A dvanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching PChannel Fully valanche Rated LeadFree Description Fifth Generation HEXFETs from International Rectifier utilize

More information

A I DM. W/ C V GS Gate-to-Source Voltage ± 12. Thermal Resistance Symbol Parameter Typ. Max. Units

A I DM. W/ C V GS Gate-to-Source Voltage ± 12. Thermal Resistance Symbol Parameter Typ. Max. Units V DS 2 V V GS Max ±2 V * PD - 973A HEXFET Power MOSFET R DSon) max @V GS = 4.V) 2. m R DSon) max @V GS = 2.V) 27. m 6 Micro3 TM SOT-23) Applications) Load System Switch Features and Benefits Features Benefits

More information

IRLB8721PbF. V DSS R DS(on) max Qg (typ.) 30V GS = 10V 7.6nC. HEXFET Power MOSFET. Absolute Maximum Ratings. Thermal Resistance.

IRLB8721PbF. V DSS R DS(on) max Qg (typ.) 30V GS = 10V 7.6nC. HEXFET Power MOSFET. Absolute Maximum Ratings. Thermal Resistance. PD - 97390 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification

More information

IRFB3004PbF IRFS3004PbF IRFSL3004PbF

IRFB3004PbF IRFS3004PbF IRFSL3004PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche

More information

IRFR4615PbF Tube/Bulk 75 IRFR4615PbF D-PAK IRFR4615TRLPbF Tape and Reel Left 3000 IRFR4615TRLPbF IRFU4615PbF I-PAK Tube/Bulk 75 IRFU4615PbF

IRFR4615PbF Tube/Bulk 75 IRFR4615PbF D-PAK IRFR4615TRLPbF Tape and Reel Left 3000 IRFR4615TRLPbF IRFU4615PbF I-PAK Tube/Bulk 75 IRFU4615PbF IRFR465PbF IRFU465PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency

More information

IRF7821. HEXFET Power MOSFET

IRF7821. HEXFET Power MOSFET Applications l High Frequency Point-of-Load Synchronous Buck Converter for Applications in Networking & Computing Systems. Benefits l Very Low R DS(on) at 4.5V V GS l Low Gate Charge l Fully Characterized

More information

V DSS R DS(on) max Qg 30V GS = 10V 34nC

V DSS R DS(on) max Qg 30V GS = 10V 34nC Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifer MOSFET for Isolated DC-DC Converters in Networking Systems HEXFET Power MOSFET V DSS R DS(on) max Qg 30V 3.3m:@V GS

More information

IRLML6246TRPbF HEXFET Power MOSFET

IRLML6246TRPbF HEXFET Power MOSFET V DS 20 V V GS Max ± 2 V R DS(on) max (@V GS = 4.5V) R DS(on) max (@V GS = 2.5V) 46 m: 66 m: G S HEXFET Power MOSFET 2 3 D PD - 97529A Micro3 TM (SOT-23) Application(s) Load/ System Switch Features and

More information

V DSS R DS(on) max I D

V DSS R DS(on) max I D PD- 94080 IRFB4710 IRFS4710 IRFSL4710 HEXFET Power MOSFET Applications High frequency DC-DC converters Motor Control Uninterrutible Power Supplies l l l V DSS R DS(on) max I D 100V 0.014Ω 75A Benefits

More information

Power MOSFET FEATURES. IRF840PbF SiHF840-E3 IRF840 SiHF840

Power MOSFET FEATURES. IRF840PbF SiHF840-E3 IRF840 SiHF840 Power MOSFET PRODUCT SUMMARY (V) 500 R DS(on) (Ω) = 0.85 Q g (Max.) (nc) 63 Q gs (nc) 9.3 Q gd (nc) 32 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease

More information

IRFH7911TR2PBF PQFN 5mm x 6mm Tape and Reel 400. Absolute Maximum Ratings Parameter Q1 Max. Q2 Max. Units

IRFH7911TR2PBF PQFN 5mm x 6mm Tape and Reel 400. Absolute Maximum Ratings Parameter Q1 Max. Q2 Max. Units PD - 97427A IRFH79PbF HEXFET Power MOSFET Q Q2 V DS 3 3 V R DS(on) max (@V GS = V) 8.6 3. m: Q g (typical) 8.3 34 nc I D (@T A = 25 C) 3 28 A Dual PQFN 5X6 mm Applications Control and synchronous MOSFET

More information

Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )

Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) l Advanced Process Technology l Surface Mount (IRF9Z34S) l Low-profile through-hole (IRF9Z34L) l 175 C Operating Temperature l Fast Switching l P- Channel l Fully Avalanche Rated Description Third Generation

More information

SMPS MOSFET. V DSS Rds(on) max I D

SMPS MOSFET. V DSS Rds(on) max I D Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching SMPS MOSFET PD 92004 IRF740A HEXFET Power MOSFET V DSS Rds(on) max I D 400V 0.55Ω A Benefits

More information

IRFB3607PbF IRFS3607PbF IRFSL3607PbF

IRFB3607PbF IRFS3607PbF IRFSL3607PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche

More information

N-CHANNEL MOSFET 1 D2 P-CHANNEL MOSFET. Top View SO-8. 1

N-CHANNEL MOSFET 1 D2 P-CHANNEL MOSFET. Top View SO-8.  1 l Advanced Process Technology l Ultra Low OnResistance l Dual N and P Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l LeadFree Description Fifth Generation

More information

Absolute Maximum Ratings Parameter Max. Units

Absolute Maximum Ratings Parameter Max. Units l l l l l Advanced Process Technology Surface Mount (IRFZ46S) Low-profile through-hole (IRFZ46L) 175 C Operating Temperature Fast Switching Description Third Generation HEXFETs from International Rectifier

More information

HEXFET Power MOSFET. V DS 30 V V gs max ± 20 V R DS(on) max. 4.9 m. Q g typ nc. P C(Bottom) = 25 C. 25i A. Applications

HEXFET Power MOSFET. V DS 30 V V gs max ± 20 V R DS(on) max. 4.9 m. Q g typ nc. P C(Bottom) = 25 C. 25i A. Applications V DS 30 V V gs max ± 20 V R DS(on) max (@V GS = V) (@V GS = 4.5V) 6.8 4.9 m Q g typ. 9.4 nc I D (@T c(bottom) = 25 C) 25i HEXFET Power MOSFET PQFN 5X6 mm pplications Synchronous MOSFET for high frequency

More information

AUIRFR5305 AUIRFU5305

AUIRFR5305 AUIRFU5305 Features dvanced Planar Technology Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Fully valanche Rated Repetitive valanche llowed up to Tjmax Lead-Free, RoHS Compliant

More information

Power MOSFET FEATURES. IRF840PbF SiHF840-E3 IRF840 SiHF840

Power MOSFET FEATURES. IRF840PbF SiHF840-E3 IRF840 SiHF840 Power MOSFET PRODUCT SUMMARY (V) 500 R DS(on) (Ω) = 0.85 Q g (Max.) (nc) 63 Q gs (nc) 9.3 Q gd (nc) 32 Configuration Single TO220 G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET

More information

Power MOSFET FEATURES. IRF540PbF SiHF540-E3 IRF540 SiHF540. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20

Power MOSFET FEATURES. IRF540PbF SiHF540-E3 IRF540 SiHF540. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20 Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.077 Q g (Max.) (nc) 72 Q gs (nc) 11 Q gd (nc) 32 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET

More information

Power MOSFET. IRF510PbF SiHF510-E3 IRF510 SiHF510. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20

Power MOSFET. IRF510PbF SiHF510-E3 IRF510 SiHF510. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20 Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) () = 0.54 Q g max. (nc) 8.3 Q gs (nc) 2.3 Q gd (nc) 3.8 Configuration Single D TO220AB G FEATURES Dynamic dv/dt rating Available Repetitive avalanche rated

More information

Power MOSFET FEATURES. IRF610PbF SiHF610-E3 IRF610 SiHF610. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 200 V Gate-Source Voltage V GS ± 20

Power MOSFET FEATURES. IRF610PbF SiHF610-E3 IRF610 SiHF610. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 200 V Gate-Source Voltage V GS ± 20 Power MOSFET PRODUCT SUMMARY (V) 00 R DS(on) ( ) = 1.5 Q g (Max.) (nc) 8. Q gs (nc) 1.8 Q gd (nc) 4.5 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of

More information

Power MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20

Power MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20 Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) = 0.55 Q g (Max.) (nc) 63 Q gs (nc) 9.0 Q gd (nc) 3 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of

More information

l Advanced Process Technology TO-220AB IRF640N

l Advanced Process Technology TO-220AB IRF640N l Advanced Process Technology l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description Fifth Generation

More information

170 P C = 25 C Power Dissipation 330 P C = 100 C Power Dissipation Linear Derating Factor

170 P C = 25 C Power Dissipation 330 P C = 100 C Power Dissipation Linear Derating Factor PDP SWITCH PD - 97227 IRFB4228PbF Features l dvanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch pplications l Low E PULSE Rating to Reduce Power Dissipation

More information

G 1 A I DM. W/ C V GS Gate-to-Source Voltage ± 20

G 1 A I DM. W/ C V GS Gate-to-Source Voltage ± 20 V DS -3 V V GS Max ± 2 V IRLML93TRPbF G PD - 963C HEXFET Power MOSFET R DS(on) max (@V GS = -V) 64 mω 3 D R DS(on) max (@V GS = -4.5V) 3 mω S 2 Micro3 TM (SOT-23) IRLML93TRPbF Application(s) System/Load

More information

Power MOSFET. Fast switching. IRF640PbF SiHF640-E3 IRF640 SiHF640

Power MOSFET. Fast switching. IRF640PbF SiHF640-E3 IRF640 SiHF640 Power MOSFET PRODUCT SUMMARY (V) 00 R DS(on) () = 0.18 Q g (Max.) (nc) 70 Q gs (nc) 13 Q gd (nc) 39 Configuration Single D TO0AB FEATURES Dynamic dv/dt rating Repetitive avalanche rated Available Fast

More information

Power MOSFET. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 250 V Gate-Source Voltage V GS ± 20

Power MOSFET. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 250 V Gate-Source Voltage V GS ± 20 Power MOSFET PRODUCT SUMMARY (V) 250 R DS(on) ( ) = 10 V 0.28 Q g (Max.) (nc) 68 Q gs (nc) 11 Q gd (nc) 35 Configuration Single D D 2 PAK (TO-263) K G D S G S N-Channel MOSFET FEATURES Halogen-free According

More information

Power MOSFET FEATURES. IRF9540PbF SiHF9540-E3 IRF9540 SiHF9540

Power MOSFET FEATURES. IRF9540PbF SiHF9540-E3 IRF9540 SiHF9540 Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) V GS = 10 V 0.20 Q g (Max.) (nc) 61 Q gs (nc) 14 Q gd (nc) 29 Configuration Single TO220 G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S D PChannel

More information

Power MOSFET. IRF9640PbF SiHF9640-E3 IRF9640 SiHF9640

Power MOSFET. IRF9640PbF SiHF9640-E3 IRF9640 SiHF9640 Power MOSFET PRODUCT SUMMARY V DS (V) 200 R DS(on) () = 10 V 0.50 Q g max. (nc) 44 Q gs (nc) 7.1 Q gd (nc) 27 Configuration Single S TO220AB G FEATURES Dynamic dv/dt rating Available Repetitive avalanche

More information

Power MOSFET FEATURES. IRF740APbF SiHF740A-E3 IRF740A SiHF740A

Power MOSFET FEATURES. IRF740APbF SiHF740A-E3 IRF740A SiHF740A Power MOSFET PRODUCT SUMMARY V DS (V) 400 R DS(on) ( ) = 0 V 0.55 Q g (Max.) (nc) 36 Q gs (nc) 9.9 Q gd (nc) 6 Configuration Single D TO220AB G FEATURES Low Gate Charge Q g Results in Simple Drive Requirement

More information

IRFP460LC PD - 9.1232. HEXFET Power MOSFET V DSS = 500V. R DS(on) = 0.27Ω I D = 20A

IRFP460LC PD - 9.1232. HEXFET Power MOSFET V DSS = 500V. R DS(on) = 0.27Ω I D = 20A HEXFET Power MOSFET PD - 9.232 IRFP460LC Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, C oss, C rss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive

More information

SMPS MOSFET. V DSS R DS(on) max I D

SMPS MOSFET. V DSS R DS(on) max I D Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor Power Synchronous FET l Optimized

More information

IRF150 [REF:MIL-PRF-19500/543] 100V, N-CHANNEL. Absolute Maximum Ratings

IRF150 [REF:MIL-PRF-19500/543] 100V, N-CHANNEL. Absolute Maximum Ratings PD - 90337G REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRF150 100V 0.055Ω 38A IRF150 JANTX2N6764 JANTXV2N6764 [REF:MIL-PRF-19500/543]

More information

Power MOSFET FEATURES DESCRIPTION. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 60 V Gate-Source Voltage V GS ± 20 T C = 25 C

Power MOSFET FEATURES DESCRIPTION. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 60 V Gate-Source Voltage V GS ± 20 T C = 25 C Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) () V GS = 10 V 0.10 Q g max. (nc) 25 Q gs (nc) 5.8 Q gd (nc) 11 Configuration Single D FEATURES Dynamic dv/dt rating 175 C operating temperature Fast switching

More information

Power MOSFET FEATURES. IRF520PbF SiHF520-E3 IRF520 SiHF520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20

Power MOSFET FEATURES. IRF520PbF SiHF520-E3 IRF520 SiHF520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20 Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.7 Q g (Max.) (nc) 16 Q gs (nc) 4.4 Q gd (nc) 7.7 Configuration Single TO0AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET

More information

Power MOSFET FEATURES. IRF710PbF SiHF710-E3 IRF710 SiHF710. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20

Power MOSFET FEATURES. IRF710PbF SiHF710-E3 IRF710 SiHF710. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20 Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) ( ) = 3.6 Q g (Max.) (nc) 17 Q gs (nc) 3.4 Q gd (nc) 8.5 Configuration Single D FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease

More information

Power MOSFET FEATURES. IRFZ44PbF SiHFZ44-E3 IRFZ44 SiHFZ44 T C = 25 C

Power MOSFET FEATURES. IRFZ44PbF SiHFZ44-E3 IRFZ44 SiHFZ44 T C = 25 C Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) (Ω) V GS = 10 V 0.028 Q g (Max.) (nc) 67 Q gs (nc) 18 Q gd (nc) 25 Configuration Single FEATURES Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching

More information

Power MOSFET FEATURES. IRF540PbF SiHF540-E3 IRF540 SiHF540. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20

Power MOSFET FEATURES. IRF540PbF SiHF540-E3 IRF540 SiHF540. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20 Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.077 Q g (Max.) (nc) 72 Q gs (nc) 11 Q gd (nc) 32 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET

More information

Power MOSFET FEATURES. IRF840PbF SiHF840-E3 IRF840 SiHF840

Power MOSFET FEATURES. IRF840PbF SiHF840-E3 IRF840 SiHF840 Power MOSFET PRODUCT SUMMARY (V) 500 R DS(on) (Ω) = 0.85 Q g (Max.) (nc) 63 Q gs (nc) 9.3 Q gd (nc) 32 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease

More information

Power MOSFET FEATURES. IRF9640PbF SiHF9640-E3 IRF9640 SiHF9640

Power MOSFET FEATURES. IRF9640PbF SiHF9640-E3 IRF9640 SiHF9640 Power MOSFET PRODUCT SUMMARY V DS (V) 200 R DS(on) (Ω) = 10 V 0.50 Q g (Max.) (nc) 44 Q gs (nc) 7.1 Q gd (nc) 27 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S D

More information

IRL1004S IRL1004L. HEXFET Power MOSFET V DSS = 40V. R DS(on) = Ω I D = 130A. Absolute Maximum Ratings. Thermal Resistance.

IRL1004S IRL1004L. HEXFET Power MOSFET V DSS = 40V. R DS(on) = Ω I D = 130A. Absolute Maximum Ratings. Thermal Resistance. l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated Description Fifth Generation

More information

Power MOSFET FEATURES. IRF840LCPbF SiHF840LC-E3 IRF840LC SiHF840LC T C = 25 C. V GS at 10 V

Power MOSFET FEATURES. IRF840LCPbF SiHF840LC-E3 IRF840LC SiHF840LC T C = 25 C. V GS at 10 V Power MOSFET PRODUCT SUMMARY (V) 500 R DS(on) (Ω) = 0.85 Q g (Max.) (nc) 39 Q gs (nc) 10 Q gd (nc) 19 Configuration Single TO0AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET

More information

V DSS R DS(on) max I D

V DSS R DS(on) max I D SMPS MOSFET pplications l Switch Mode Power Supply ( SMPS ) l Uninterruptible Power Supply l High Speed Power Switching PD-9886C IRFB22N50 HEXFET Power MOSFET V DSS R DS(on) max I D 500V 0.23Ω 24 Benefits

More information

Power MOSFET FEATURES. IRL540PbF SiHL540-E3 IRL540 SiHL540

Power MOSFET FEATURES. IRL540PbF SiHL540-E3 IRL540 SiHL540 Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) = 5.0 V 0.077 Q g (Max.) (nc) 64 Q gs (nc) 9.4 Q gd (nc) 27 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel

More information

D Series Power MOSFET

D Series Power MOSFET D Series Power MOSFET SiHP25N4D PRODUCT SUMMARY (V) at T J max. 45 R DS(on) max. at 25 C ( ) V GS = V.7 Q g max. (nc) 88 Q gs (nc) 2 Q gd (nc) 23 Configuration Single TO22AB G DS ORDERING INFORMATION Package

More information

Power MOSFET FEATURES. IRF9540PbF SiHF9540-E3 IRF9540 SiHF9540 T C = 25 C. V GS at - 10 V

Power MOSFET FEATURES. IRF9540PbF SiHF9540-E3 IRF9540 SiHF9540 T C = 25 C. V GS at - 10 V Power MOSFET PRODUCT SUMMARY (V) 1 R DS(on) ( ) = 1 V. Q g (Max.) (nc) 61 Q gs (nc) 14 Q gd (nc) 9 Configuration Single TOAB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S D PChannel MOSFET FEATURES

More information

SMPS MOSFET. V DSS R DS (on) max I D

SMPS MOSFET. V DSS R DS (on) max I D Applications l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l High speed power switching SMPS MOSFET PD 93773A IRF820A HEXFET Power MOSFET V DSS R DS (on) max I D 500V 3.0Ω 2.5A Benefits

More information

Power MOSFET FEATURES. IRF840PbF SiHF840-E3 IRF840 SiHF840

Power MOSFET FEATURES. IRF840PbF SiHF840-E3 IRF840 SiHF840 Power MOSFET PRODUCT SUMMARY (V) 500 R DS(on) (Ω) = 0.85 Q g (Max.) (nc) 63 Q gs (nc) 9.3 Q gd (nc) 32 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease

More information