IPS511/IPS511S FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH. Load

Transcription

1 Data Sheet No.PD 6155 IPS511/IPS511S FUY PROTECTED IG SIDE POWER MOSFET SWITC Features Over temperature protection (with auto-restart) Short-circuit protection (current limit ) Active clamp E.S.D protection Status feedback Open load detection ogic ground isolated from power ground Product Summary R ds(on) 135mΩ (max) V clamp 5V I imit 5A V open load 3V Description The IPS511/IPS511S are fully protected five terminal high side switches with built in short circuit, over-temperature, ESD protection, inductive load capability and diagnostic feedback. The output current is controlled when it reaches Ilim value. The current limitation is activated until the thermal protection acts. The over-temperature protection turns off the high side switch if the junction temperature exceeds Tshutdown. It will automatically restart after the junction has cooled 7 o C below Tshutdown. A diagnostic pin is provided for status feedback of short-circuit, over-temperature and open load detection. The double level shifter circuitry allows large offsets between the logic ground and the load ground. Truth Table Op. Conditions Normal Normal Open load Open load Over current Over current Over-temperature Over-temperature In Out (limiting) (cycling) Dg Typical Connection Packages + 5v Output pull-up resistor + VCC 15K Status feedback Rdg Dg ogic control Vcc Out 5 ead D 2 Pak (SMD22 IPS511S Rin ogic signal In Gnd ogic Gnd oad oad Gnd 5 ead TO22 IPS

2 Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to GROUND lead. (Tj = 25 o C unless otherwise specified). Symbol Parameter Min. Max. Units Test Conditions V out Maximum output voltage Vcc-5 Vcc+.3 V offset Maximum logic ground to load ground offset Vcc-5 Vcc+.3 V in Maximum Input voltage V cc max Maximum Vcc voltage 5 Iin, max. Maximum IN current -5 1 ma Vdg Maximum diagnostic output voltage V Idg, max Maximum diagnostic output current -1 1 ma Isd cont. Diode max. permanent current (1) 2.2 Isd pulsed Diode max. pulsed current (1) 1 ESD1 Electrostatic discharge voltage (uman Body) 4 C=1pF, R=15Ω, ESD2 Electrostatic discharge voltage (Machine Model).5 kv C=2pF, R=Ω, =1µ Pd Maximum power dissipation (1) (TC=25 o C) IPS (rth=8 o C/W) IPS511S 1.56 Tj max. Max. storage & operating junction temp Tlead ead temperature (soldering 1 seconds) 3 V A W o C Thermal Characteristics Symbol Parameter Min. Typ. Max. Units Test Conditions Rth 1 Thermal resistance junction to case 5 Rth 2 Thermal resistance junction to ambient 6 Rth 1 Thermal resistance with standard footprint 6 Rth 2 Thermal resistance with 1" square footprint 4 Rth 3 Thermal resistance junction to case 5 o C/W TO-22 D 2 PAK (SMD22) (1) imited by junction temperature (pulsed current limited also by internal wiring) 2

3 Recommended Operating Conditions These values are given for a quick design. For operation outside these conditions, please consult the application notes. Symbol Parameter Min. Max. Units Vcc Continuous Vcc voltage VI igh level input voltage VI ow level input voltage Iout Continuous output current Tamb=85 o C (TAmbient = 85 o C, Tj = 125 o C, Rth < 6 o C/W) IPS (TAmbient = 85 o C, Tj = 125 o C, Rth = 8 o C/W) IPS Rin Recommended resistor in series with IN pin 4 6 Rdg Recommended resistor in series with DG pin 1 2 V A kω Static Electrical Characteristics (Tj = 25 o C, Vcc = 14V unless otherwise specified.) Symbol Parameter Min. Typ. Max. Units Test Conditions Rds(on) ON state resistance Tj = 25 o C Vin = 5V, Iout = o C Rds(on) ON state Vcc = 6V (Vcc=6V) mω Vin = 5V, Iout = 1A Rds(on) ON state resistance Tj = 15 o C 2 Vin = 5V, Iout = o C Vcc oper. Operating voltage range V clamp 1 Vcc to OUT clamp voltage Id = 1mA (see Fig.1 & 2) V V clamp 2 Vcc to OUT clamp voltage Id = Isd (see Fig.1 & 2) Vf Body diode forward voltage Id = 2.5A, Vin = V Icc off Supply current when OFF 16 5 µa Vin = V, Vout = V Icc on Supply current when ON.7 2 ma Vin = 5V Icc ac Ripple current when ON (AC RMS) 2 µa Vin = 5V Vdgl ow level diagnostic output voltage.15.4 V Idg = 1.6 ma Ioh Output leakage current 6 11 Vout = 6V Iol Output leakage current 25 Vout = V µa Idg leakage Diagnostic output leakage current 1 Vdg = 5.5V Vih IN high threshold voltage Vil IN low threshold voltage V Iin, on On state IN positive current 7 2 µa Vin = 5V In hyst. Input hysteresis V 3

4 Switching Electrical Characteristics Vcc = 14V, Resistive oad = 5.6Ω, T j = 25 o C, (unless otherwise specified). Symbol Parameter Min. Typ. Max. Units Test Conditions Tdon Turn-on delay time 7 5 Tr1 Rise time to Vout = Vcc - 5V 1 5 µs Tr2 Rise time Vcc - 5V to Vout = 9% of Vcc 45 1 See figure 3 dv/dt (on) Turn ON dv/dt V/µs Eon Turn ON energy 4 µj Tdoff Turn-off delay time 15 5 µs Tf Fall time to Vout = 1% of Vcc 1 5 See figure 4 dv/dt (off) Turn OFF dv/dt 2 6 V/µs Eoff Turn OFF energy 8 µj Tdiag Vout to Vdiag propagation delay 5 15 µs See figure 6 Protection Characteristics Symbol Parameter Min. Typ. Max. Units Test Conditions Ilim Internal current limit A Vout = V Tsd+ Over-temp. positive going threshold 165 o C See fig. 2 Tsd- Over-temp. negative going threshold 158 o C See fig. 2 V sc Short-circuit detection voltage (3) V See fig. 2 V open load Open load detection threshold V (3) Referenced to Vcc ead Assignments 3 (Vcc) 3 (Vcc) 1 - Ground 2 - In 3 - Vcc 4 - DG 5 - Out ead - TO22 IPS511 Part Number 5 ead - D 2 PAK (SMD22) IPS511S 4

5 Functional Block Diagram All values are typical VCC 5V 62 V Over temperature 165 C Tj 158 C Charge pump 2.7 V IN 7 V 2 KΩ 2.2 V evel shift driver - DG 7 V Current limit + 5 A 2 Ω 3 V - + Open load Short-circuit V GND VOUT T clamp Vin 5 V Vin V Iout Iout Ilim. limiting T shutdown cycling ( + Vcc ) Out V V clamp T Tsd+ Tsd- (16 ) ( see Appl. Notes to evaluate power dissipation ) Figure 1 - Active clamp waveforms Figure 2 - Protection timing diagram 5

6 Vin Vcc 9% Vcc - 5V Vin Vout dv/dt on 9% 1% Td on Iout1 Tr 1 Resistive load Eon1 Tr 2 Iout2 E1(t) E2 (t) Vout 1% Td off Tf dv/dt off Eon2 Inductive load Figure 3 - Switching times definition (turn-on) Turn on energy with a resistive or an inductive load Figure 4 - Switching times definition (turn-off) Vin Vin Dg Vcc Out IN Gnd + 14 V - Vcc -Vsc Vout Vol Vcc 5 v v Vout Rem : V load is negative during demagnetization R Iout Vdiag Diag on blanking T diag Diag off blanking Figure 5 - Active clamp test circuit Figure 6 - Diagnostic delay definitions 6

7 15 2% 1 15% 5 1% % Figure 7 - Rds(on) (mω) Vs Vcc (V) Figure 8 - Normalized Rds(on) (%) Vs Tj ( o C) Figure 9 - Rds(on) (mω) Vs Iout (A) Figure 1 - Max. I out (A) Vs oad Inductance (u) 7

8 5 Rthja= 2 C/W Rthja= 1 C/W 5 4 Rthja= 4 C/W 4 1inch² footprint Rthja= 35 C/W Free air 2 Std. footprint Rthja= 6 C/W Figure 11a - Max load current (A) Vs Tamb ( o C) IPS511 Figure 11b - Max load current (A) Vs Tamb ( o C) IPS511S Figure 12 - Transient Thermal Impedance ( o C/W) Vs Time (S) Figure 13 - Ilim (A) Vs Tj ( o C) 8

9 6 Resistive load 1 4 Eon Eoff 1 1 I=1.5A I=Imax vs Induct.(see fig.1) E+1 1E+2 1E+3 1E+4 1E+5 1E+6 Figure 14 - Eon, Eoff (µj) (A) Vs Iout (A) Figure 15 - Eon (µj) Vs oad Inductance (µ) (see Fig. 3) Diag on blanking 1.E-3 1.E E-5 25 Diag off blanking E Figure 16 - Diag Blanking time (µs) Vs Iout (A) (resistive load - see Fig. 6) Figure 17 - Icc (ma) Vs Vcc (V) 9

10 Figure 18 - Vin = 5V (µa) Vs Tj ( o C) Case Outline 5 ead - TO22 IRGB

11 Case Outline 5 ead - D 2 PAK (SMD22)

12 Tape & Reel 5 ead - D 2 PAK (SMD22) / IR WORD EADQUARTERS: 233 Kansas St., El Segundo, California 9245 Tel: (31) IR EUROPEAN REGIONA CENTRE: 439/445 Godstone Rd., Whyteleafe, Surrey CR3 B, United Kingdom Tel: () IR JAPAN: K& Bldg., 2F, 3-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan Tel: IR ONG KONG: Unit 38, #F, New East Ocean Centre, No. 9 Science Museum Road, Tsimshatsui East, Kowloon ong Kong Tel: (852) Data and specifications subject to change without notice. 3/27/2 12

13 Note: For the most current drawings please refer to the IR website at: