SM9992DSQG. Features. Ordering and Marking Information. Dual N-Channel Enhancement Mode MOSFET 20V/12A, R DS(ON) =4.5V =4V =3.7V =3.
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1 Dual N-Channel Enhancement Mode MOSFET Features 20V/12, =8.1mΩ =4.5V =8.5mΩ =4V =8.8mΩ =3.7V =9.2mΩ =3.1V =11mΩ =2.5V Reliable and Rugged Lead Free and Green Devices vailable (RoHS Compliant) ESD protection Pin Description S1 S1 G1 D S2 S2 G2 Top View of DFN2x5-6 D pplications Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. Ordering and Marking Information (3) G1 (4) G2 S1 S1 S2 S2 (1) (2) (5) (6) N-Channel MOSFET SM9992DS ssembly Material Handling Code Temperature Range Package Code Package Code QG : DFN2x5-6 Operating Junction Temperature Range C : -55 to 150 o C Handling Code TR : Tape & Reel (3000ea/reel) ssembly Material G : Halogen and Lead Free Device SM9992DS QG : SM9992 XXXXX XXXXX - Lot Code Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 0% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines Green to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 1
2 bsolute Maximum Ratings Symbol Parameter Rating Unit V DSS Drain-Source Voltage 20 V S Gate-Source Voltage ±12 I D Continue Drain Current T =25 C 12** I DM 300µs Pulsed Drain Current 48 T =25 C µs Pulsed Drain Current 80*** I S Diode continuous forward current 1.5 T J Maximum Junction Temperature 150 C T STG Storage Temperature Range -55 to 150 P D T =25 C 3.5 Maximum Power Dissipation W T =70 C 2.2 R θj * Thermal Resistance-Junction to mbient 36 C/W R θjc * Thermal Resistance-Junction to Case 5.6 Note:*Surface Mounted on 1in 2 pad area, t sec. ** Current limited by bond wire. *** Duty Cycle 1% Electrical Characteristics (T = 25 C Unless Otherwise Noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit Static Characteristics BV DSS Drain-Source Breakdown Voltage =0V, I DS =250µ V I DSS V DS =16V, =0V Zero Gate Voltage Drain Current µ T J =85 C (th) Gate Threshold Voltage V DS =, I DS =250µ V I GSS Gate Leakage Current =±12V, V DS =0V - - ± µ =4.5V, I DS = =4V, I DS = a Drain-Source On-state Resistance =3.7V, I DS = mω =3.1V, I DS = =2.5V, I DS = Diode Characteristics V SD a Diode Forward Voltage I SD =6, =0V V 2
3 Electrical Characteristics (Cont.) (T = 25 C Unless Otherwise Noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit Dynamic Characteristics b R G Gate Resistance =0V,V DS =0V,F=1MHz Ω C iss Input Capacitance =0V, C oss Output Capacitance V DS =V, Reverse Transfer Capacitance Frequency=1.0MHz C rss t d(on) Turn-on Delay Time t r Turn-on Rise Time V DD =V, R L =Ω, I DS =1, V GEN =V, t d(off) Turn-off Delay Time R G =6Ω Turn-off Fall Time t f Gate Charge Characteristics b Q g Total Gate Charge Q gs Gate-Source Charge V DS =V, =4.5V, I DS = Gate-Drain Charge - - Q gd Note a : Pulse test ; pulse width 300µs, duty cycle 2%. Note b : Guaranteed by design, not subject to production testing. pf ns nc 3
4 Typical Operating Characteristics Power Dissipation Drain Current P tot - Power (W) I D - Drain Current () T =25 o C T =25 o C,V G =4.5V Junction Temperature ( o C) - Junction Temperature ( o C) Safe Operation rea Thermal Transient Impedance I D - Drain Current () Rds(on) Limit µs 300µs 1ms ms 0ms 1s DC T =25 o C V DS - Drain-Source Voltage (V) Normalized Transient Thermal Resistance Duty = 0.5 Single Pulse Mounted on 1in 2 pad R θj : 36 o C/W 1E-3 1E-5 1E-4 1E Square Wave Pulse Duration (sec) 4
5 Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 50 =2.5,3,4,5,6,7,8,9,V 11 I D - Drain Current () V 1.7V 1.5V - On - Resistance (mω) =3.1V =4.5V =2.5V =3.7V =4V V DS - Drain-Source Voltage (V) I D - Drain Current () Gate-Source On Resistance Gate Threshold Voltage 25 I DS =6 1.4 I DS =250µ - On Resistance (mω) Normalized Threshold Voltage Gate - Source Voltage (V) - Junction Temperature ( C) 5
6 Typical Operating Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward = 4.5V I DS = 6 50 Normalized On Resistance I S - Source Current () 1 =150 o C =25 o C 0.6 R =25 o C: 6.2mΩ Junction Temperature ( C) V SD - Source - Drain Voltage (V) Capacitance Gate Charge Frequency=1MHz 9 V DS =V I DS = 6 C - Capacitance (pf) Crss Coss Ciss - Gate - source Voltage (V) V DS - Drain - Source Voltage (V) Q G - Gate Charge (nc) 6
7 valanche Test Circuit and Waveforms VDS L tp VDSX(SUS) DUT VDS RG VDD IS tp IL 0.01W VDD ES tv Switching Time Test Circuit and Waveforms VDS DUT RD VDS 90% RG VGS VDD tp % VGS td(on) tr td(off) tf 7
8 Package Information DFN2x5-6 (saw type) D D1 E E1 L PIN 1 INDEX RE 2X 2X TOP VIEW b e BOTTOM VIEW PIN#1 IDENTIFICTION CHMFER X45 1 SIDE VIEW 1 3 SETING PLNE FRONT VIEW S Y M MILLIMETERS B O L MIN. MX. MIN INCHES MX DFN2x5-6 RECOMMENDED LND PTTERN b D D E E e 0.50 BSC BSC L UNIT: mm 8
9 Carrier Tape & Reel Dimensions D0 P2 P0 B T F W E1 B0 P1 D1 B K0 B B 0 d H T1 pplication H T1 C d D W E1 F 178.0± MIN. 13.2± ± MIN. 21.0± ±0. 5.5±0. DFN2x5-6 P0 P1 P2 D0 D1 T 0 B0 K0 4.0±0. 4.0±0. 2.0± ± ± ± ±0.20 (mm) 9
10 Taping Direction Information DFN2x5-6 USER DIRECTION OF FEED Classification Profile
11 Classification Reflow Profiles Profile Feature Sn-Pb Eutectic ssembly Pb-Free ssembly Preheat & Soak Temperature min (T smin ) Temperature max (T smax ) Time (T smin to T smax ) (t s ) 0 C 150 C seconds 150 C 200 C seconds verage ramp-up rate (T smax to T P ) 3 C/second max. 3 C/second max. Liquidous temperature (T L ) Time at liquidous (t L ) Peak package body Temperature (T p )* Time (t P )** within 5 C of the specified classification temperature (T c ) 183 C seconds 217 C seconds See Classification Temp in table 1 See Classification Temp in table 2 20** seconds 30** seconds verage ramp-down rate (T p to T smax ) 6 C/second max. 6 C/second max. Time 25 C to peak temperature 6 minutes max. 8 minutes max. * Tolerance for peak profile Temperature (T p ) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (t p ) is defined as a supplier minimum and a user maximum. Table 1. SnPb Eutectic Process Classification Temperatures (Tc) Package Volume mm 3 Thickness <350 Table 2. Pb-free Process Classification Temperatures (Tc) Volume mm <2.5 mm 235 C 220 C 2.5 mm 220 C 220 C Package Thickness Volume mm 3 <350 Volume mm Volume mm 3 >2000 <1.6 mm 260 C 260 C 260 C 1.6 mm 2.5 mm 260 C 250 C 245 C 2.5 mm 250 C 245 C 245 C Reliability Test Program Test item Method Description SOLDERBILITY JESD-22, B2 5 Sec, 245 C HTRB JESD-22, 8 00 Hrs, 80% of VDS Tjmax HTGB JESD-22, 8 00 Hrs, 0% of VGS Tjmax PCT JESD-22, Hrs, 0%RH, 2atm, 121 C TCT JESD-22, Cycles, -65 C~150 C Customer Service Sinopower Semiconductor, Inc. 5F, No. 6, Dusing 1St Rd., Hsinchu Science Park, Hsinchu, 30078, Taiwan TEL: Fax:
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