HEXFET Power MOSFET. V DS 30 V V gs max ± 20 V R DS(on) max. 4.9 m. Q g typ nc. P C(Bottom) = 25 C. 25i A. Applications

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1 V DS 30 V V gs max ± 20 V R DS(on) max (@V GS = V) (@V GS = 4.5V) m Q g typ. 9.4 nc I D (@T c(bottom) = 25 C) 25i HEXFET Power MOSFET PQFN 5X6 mm pplications Synchronous MOSFET for high frequency buck converters Features Benefits Low Thermal Resistance to PCB (< 2.3 C/W) Enable better thermal dissipation Low Profile (<.2mm) results in Increased Power Density IndustryStandard Pinout MultiVendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL, Consumer Qualification Increased Reliability Orderable part number Package Type Standard Pack Form Quantity IRFH832TRPBF PQFN 5mm x 6mm Tape and Reel 4000 Note bsolute Maximum Ratings Parameter V GS GatetoSource Voltage I T = 25 C Continuous Drain Current, V V I T = 70 C Continuous Drain Current, V V I T C(Bottom) = 25 C Continuous Drain Current, V V I T C(Bottom) = C Continuous Drain Current, V V I T C = 25 C I DM P = 25 C P C(Bottom) = 25 C T J T STG Continuous Drain Current, V V (Source Bonding Technology Limited) Pulsed Drain Current c Power Dissipation g Power Dissipation g Linear Derating Factor g Operating Junction and Storage Temperature Range Max. ± hi 52hi 25i to 50 Units V W W/ C C Notes through are on page 9

2 T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units BV DSS DraintoSource Breakdown Voltage 30 V BV DSS / T J Breakdown Voltage Temp. Coefficient 9.7 mv/ C R DS(on) Static DraintoSource OnResistance m V GS(th) Gate Threshold Voltage V V GS(th) Gate Threshold Voltage Coefficient 6.4 mv/ C I DSS DraintoSource Leakage Current.0 μ 50 I GSS GatetoSource Forward Leakage GatetoSource Reverse Leakage n gfs Forward Transconductance 68 S Q g Total Gate Charge nc Q g Total Gate Charge Q gs PreVth GatetoSource Charge 5.0 Q gs2 PostVth GatetoSource Charge.9 Q gd GatetoDrain Charge 6.7 nc Q godr Gate Charge Overdrive 5.8 Q sw Switch Charge (Q gs2 Q gd ) 8.6 Q oss Output Charge 6.7 nc R G Gate Resistance t d(on) TurnOn Delay Time 4 t r Rise Time 20 t d(off) TurnOff Delay Time 2 ns t f Fall Time 6.8 C iss Input Capacitance 2600 C oss Output Capacitance 530 pf C rss Reverse Transfer Capacitance 270 valanche Characteristics Parameter Typ. Conditions V GS = 0V, I D = 250μ Reference to 25 C, I D =.0m V GS = V, I D = 20 e V GS = 4.5V, I D = 6 e V DS = V GS, I D = 50μ V DS = 24V, V GS = 0V V DS = 24V, V GS = 0V, T J = 25 C V GS = 20V V GS = 20V V DS = V, I D = 20 V GS = V, V DS = 5V, I D = 20 V DS = 5V V GS = 4.5V I D = 20 V DS = 6V, V GS = 0V V DD = 5V, V GS = 4.5V I D = 20 R G =.8 V GS = 0V V DS = V ƒ =.0MHz Max. Units E S Single Pulse valanche Energy d 93 mj I R valanche Current c 20 Diode Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol D 25i (Body Diode) showing the G I SM Pulsed Source Current integral reverse 332 S (Body Diode) c pn junction diode. V SD Diode Forward Voltage.0 V T J = 25 C, I S = 20, V GS = 0V e t rr Reverse Recovery Time 2 8 ns T J = 25 C, I F = 20, V DD = 5V Q rr Reverse Recovery Charge nc di/dt = 500 /μs e t on Forward TurnOn Time Time is dominated by parasitic Inductance Thermal Resistance Parameter Typ. Max. Units R qjc (Bottom) JunctiontoCase f 2.3 R qjc (Top) JunctiontoCase f 3 C/W R qj Junctiontombient g 37 R qj (<s) Junctiontombient g 25 2

3 C, Capacitance (pf) V GS, GatetoSource Voltage (V) I D, DraintoSource Current () R DS(on), DraintoSource On Resistance (Normalized) I D, DraintoSource Current () I D, DraintoSource Current () IRFH832PbF 0 VGS TOP V 7.0V 5.0V 4.5V 3.5V 3.0V 2.75V BOTTOM 2.5V 0 VGS TOP V 7.0V 5.0V 4.5V 3.5V 3.0V 2.75V BOTTOM 2.5V 2.5V 60μs PULSE WIDTH Tj = 25 C 0. V DS, DraintoSource Voltage (V) Fig. Typical Output Characteristics 2.5V 60μs PULSE WIDTH Tj = 50 C 0. V DS, DraintoSource Voltage (V) Fig 2. Typical Output Characteristics I D = 20 V GS = V.4 T J = 50 C.2 T J = 25 C.0.0 V DS = 5V 60μs PULSE WIDTH V GS, GatetoSource Voltage (V) T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized OnResistance vs. Temperature V GS = 0V, f = MHZ C iss = C gs C gd, C ds SHORTED C rss = C gd C oss = C ds C gd I D = 20 V DS = 24V V DS = 5V V DS = 6.0V 8.0 C iss C oss 4.0 C rss 2.0 V DS, DraintoSource Voltage (V) Fig 5. Typical Capacitance vs.draintosource Voltage Q G, Total Gate Charge (nc) Fig 6. Typical Gate Charge vs.gatetosource Voltage 3

4 V GS(th), I D, Drain Current () Gate threshold Voltage (V) I SD, Reverse Drain Current () I D, DraintoSource Current () IRFH832PbF 0 0 OPERTION IN THIS RE LIMITED BY R DS (on) T J = 50 C msec μsec T J = 25 C V GS = 0V V SD, SourcetoDrain Voltage (V) Fig 7. Typical SourceDrain Diode Forward Voltage Fig 8. Maximum Safe Operating rea 2.6 Limited by Source Bonding Technologyi msec Tc = 25 C Tj = 50 C Single Pulse DC V DS, DraintoSource Voltage (V) 80 Limited By Source Bonding Technology i I D = 50μ 40.4 I D = 250μ I D =.0m I D = T C, Case Temperature ( C) Fig 9. Maximum Drain Current vs. Case (Bottom) Temperature T J, Temperature ( C ) Fig. Threshold Voltage vs. Temperature 0. D = Thermal Response ( Z thjc ) C/W 0.0 SINGLE PULSE ( THERML RESPONSE ) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc Tc 0.00 E006 E t, Rectangular Pulse Duration (sec) Fig. Maximum Effective Transient Thermal Impedance, JunctiontoCase (Bottom) 4

5 R DS(on), Drainto Source On Resistance (m ) valanche Current () E S, Single Pulse valanche Energy (mj) IRFH832PbF I D = I D TOP BOTTOM 20 8 T J = 25 C T J = 25 C V GS, Gate to Source Voltage (V) Starting T J, Junction Temperature ( C) Fig 2. OnResistance vs. Gate Voltage Fig 3. Maximum valanche Energy vs. Drain Current llowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 25 C and Tstart =25 C (Single Pulse) llowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25 C and Tstart = 25 C. 0..0E06.0E05.0E04.0E03.0E02.0E0 tav (sec) Fig 4. Typical valanche Current vs.pulsewidth 5

6 D.U.T ƒ Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer Reverse Recovery Current Driver Gate Drive Period P.W. D.U.T. I SD Waveform Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt D = P.W. Period V GS =V V DD * R G dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. Device Under Test V DD Repplied Voltage Body Diode Inductor Current Curent Forward Drop Ripple 5% I SD * V GS = 5V for Logic Level Devices Fig 5. Peak Diode Recovery dv/dt Test Circuit for NChannel HEXFET Power MOSFETs 5V tp V (BR)DSS V DS L DRIVER R G V20V GS tp D.U.T IS 0.0 V DD I S Fig 6a. Unclamped Inductive Test Circuit Fig 6b. Unclamped Inductive Waveforms V DS R D V DS V GS D.U.T. 90% R G V DD VV GS Pulse Width µs Duty Factor % V GS t d(on) t r t d(off) t f Fig 7a. Switching Time Test Circuit Fig 7b. Switching Time Waveforms Vds Id Vgs 0 K DUT L VCC Vgs(th) Qgs Qgs2 Qgd Qgodr 6 Fig 8a. Gate Charge Test Circuit Fig 8b. Gate Charge Waveform

7 PQFN 5x6 Outline "E" Package Details For footprint and stencil design recommendations, please refer to application note: For PQFN inspection techniques, please refer to application note: N36 N54 PQFN 5x6 Outline "E" Part Marking INTERNTIONL RECTIFIER LOGO DTE CODE SSEMBLY SITE CODE (Per SCOP ) PIN IDENTIFIER XXXX XYWWX XXXXX PRT NUMBER ( 4 or 5 digits ) MRKING CODE (Per Marking Spec) LOT CODE (Eng Mode Min last 4 digits of ETI#) (Prod Mode 4 digits of SPN code) Note: For the most current drawing please refer to IR website at: 7

8 PQFN 5x6 Outline "E" Tape and Reel NOTE: Controlling dimensions in mm Std reel quantity is 4000 parts. CODE B C D E F G REEL DIMENSIONS STNDRD OPTION (QTY 4000) TR OPTION (QTY 400) METRIC IMPERIL METRIC IMPERIL MIN Ref 3 MX MIN MX MIN Ref 3 MX MIN MX

9 Qualification information Qualification level Moisture Sensitivity Level RoHS compliant Cons umer (per JE DE C JE S D47F guidelines ) MS L PQFN 5mm x 6mm (per JE DE C JS TD020D ) Yes Qualification standards can be found at International Rectifier s web site Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: pplicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L = 0.46mH, R G = 50, I S = 20. ƒ Pulse width 400µs; duty cycle 2%. R is measured at T J of approximately 90 C. When mounted on inch square 2 oz copper pad on.5x.5 in. board of FR4 material. Calculated continuous current based on maximum allowable junction temperature. Current is limited to 25 by Source Bonding Technology. Data and specifications subject to change without notice. 9 IR WORLD HEDQURTERS: N. Sepulveda Blvd., El Segundo, California 90245, US Tel: (3) TC Fax: (3) Visit us at for sales contact information.