Handling Code Temperature Range Package Code. Assembly Material
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1 SM1F4NSG N-Channel Enhancement Mode MOSFET Features Pin Description 15V/86A, R DS(ON) = V GS = 1V Reliable and Rugged D G S Lead Free and Green Devices Available (RoHS Compliant) Top View of TO D Applications Synchronous Rectification. G Power Management in Inverter Systems. S N-Channel MOSFET Ordering and Marking Information SM1F4NS Assembly Material Handling Code Temperature Range Package Code Package Code G : TO Operating Junction Temperature Range C : -55 to 15 o C Handling Code TR : Tape & Reel (8ea/reel) Assembly Material G : Halogen and Lead Free Device SM1F4NS G : SM1F4N XXXXX XXXXX - Lot Code Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 1% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-2D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines Green to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 9ppm by weight in homogeneous material and total of Br and Cl does not exceed 15ppm by weight). SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 1
2 Absolute Maximum Ratings (T A = 25 C Unless Otherwise Noted) Symbol Parameter Rating Unit Common Ratings V DSS Drain-Source Voltage 15 V GSS Gate-Source Voltage ±3 T J Maximum Junction Temperature 15 T STG Storage Temperature Range -55 to 15 I S Diode Continuous Forward Current T C =25 C 8 I D Continuous Drain Current T C =25 C 86 A I DM Pulsed Drain Current T C =25 C 3 a P D Maximum Power Dissipation T C =25 C 25 T C =1 C 1 R qjc Thermal Resistance-Junction to Case Steady State.5 C/W I D P D R qja c I AS b E AS b Continuous Drain Current Maximum Power Dissipation T A =25 C 8.6 T A =7 C 6.9 T A =25 C 2.5 T A =7 C 1.6 Thermal Resistance-Junction to Ambient Steady State 5 C/W Avalanche Current, Single pulse L=.5mH 31 A Avalanche Energy, Single pulse L=.5mH 24 mj Note a:pulse width limited by max. junction temperature. Note b:uis tested and pulse width limited by maximum junction temperature 15 o C (initial temperature Tj=25 o C). Note c:surface Mounted on 1in 2 pad area. V C W A W 2
3 Electrical Characteristics (T A = 25 C Unless Otherwise Noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit Static Characteristics BV DSS Drain-Source Breakdown Voltage V GS =V, I DS =25mA V I DSS Zero Gate Voltage Drain Current V DS =12V, V GS =V T J =85 C V GS(th) Gate Threshold Voltage V DS =V GS, I DS =25mA V I GSS Gate Leakage Current V GS =±3V, V DS =V - - ±1 na R DS(ON) d Drain-Source On-state Resistance V GS =1V, I DS =4A mw Diode Characteristics V SD d Diode Forward Voltage I SD =2A, V GS =V V t rr Reverse Recovery Time ns I SD =4A, dl SD /dt=1a/ms Reverse Recovery Charge nc Q rr Dynamic Characteristics e R G Gate Resistance V GS =V,V DS =V,f=1MHz W C iss Input Capacitance V GS =V, C oss Output Capacitance V DS =3V, Reverse Transfer Capacitance Frequency=1.MHz C rss t d(on) Turn-on Delay Time t r Turn-on Rise Time V DD =3V, R L =3W, I DS =1A, V GEN =1V, t d(off) Turn-off Delay Time R G =6W Turn-off Fall Time t f Gate Charge Characteristics e Q g Total Gate Charge Q gs Gate-Source Charge V DS =3V, V GS =1V, I DS =4A Gate-Drain Charge Q gd Note d:pulse test ; pulse width 3ms, duty cycle 2%. Note e:guaranteed by design, not subject to production testing. ma pf ns nc 3
4 Typical Operating Characteristics 3 Power Dissipation 1 Drain Current 25 8 Ptot - Power (W) ID - Drain Current (A) T C =25 o C Tj - Junction Temperature ( C) T C =25 o C,V G =1V Tj - Junction Temperature ( C) 1 Safe Operation Area 3 Thermal Transient Impedance ID - Drain Current (A) 1ms 1 Rds(on) Limit 1ms 1 1ms DC 1 T C =25 o C VDS - Drain - Source Voltage (V) Normalized Transient Thermal Resistance 1 Duty = E-3 Single Pulse R qjc :.5 o C/W 1E-4 1E-6 1E-5 1E-4 1E Square Wave Pulse Duration (sec) 4
5 Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 2 28 ID - Drain Current (A) V GS =7,8,9,1V 6.5V 6V 5.5V RDS(ON) - On - Resistance (mw) V GS =1V VDS - Drain - Source Voltage (V) ID - Drain Current (A) Gate-Source On Resistance Gate Threshold Voltage 35 I DS =4A 1.6 I DS =25mA RDS(ON) - On - Resistance (mw) Normalized Threshold Voltage VGS - Gate - Source Voltage (V) Tj - Junction Temperature ( C) 5
6 Typical Operating Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward V GS = 1V I DS = 4A 2 1 Normalized On Resistance IS - Source Current (A) 1 1 T j =15 o C T j =25 o C R j =25 o C: 11mW Tj - Junction Temperature ( C) VSD - Source - Drain Voltage (V) C - Capacitance (pf) Capacitance 8 Frequency=1MHz 7 6 Ciss Coss Crss VDS - Drain - Source Voltage (V) VGS - Gate-source Voltage (V) V DS = 3V I DS = 4A Gate Charge QG - Gate Charge (nc) 6
7 Typical Operating Characteristics (Cont.) BVDSS vs Junction Temperature 1.3 I DS =25mA Normalized Breakdown Voltage Tj - Junction Temperature ( C) 7
8 Avalanche Test Circuit and Waveforms DUT VDS L tp VDSX(SUS) VDS RG VDD IAS tp IL.1W EAS VDD tav Switching Time Test Circuit and Waveforms VDS RD VGS DUT VDS 9% RG VDD tp 1% VGS td(on) tr td(off) tf 8
9 Package Information TO E A c2 E1 L2 H D L1 D1 b b2 e c SEE VIEW A GAUGE PLANE L A1 SEATING PLANE.25 VIEW A S Y TO M B MILLIMETERS INCHES O L MIN. MAX. MIN. MAX. A A1 b2 c c2 D D1 E..25 b E e 2.54 BSC.1 BSC H L L1 L2 q o 8 o o 8 o Note : Follow JEDEC TO-263 AB. - RECOMMENDED LAND PATTERN 8.5 MIN. 9. MIN MIN. 4. MIN. 5.8 UNIT: mm 9
10 Carrier Tape & Reel Dimensions OD P P2 P1 A H A E1 OD1 B A T B W F K B A SECTION A-A SECTION B-B d T1 Application A H T1 C d D W E1 F TO ±2. 5 MIN MIN. 2.2 MIN. 24.± ± ±.1 P P1 P2 D D1 T A B K 4.±.1 16.±.1 2.± MIN ± ±.2 5.2±.2 (mm) 1
11 Taping Direction Information TO USER DIRECTION OF FEED Classification Profile 11
12 Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Preheat & Soak Temperature min (T smin ) Temperature max (T smax ) Time (T smin to T smax ) (t s ) 1 C 15 C 6-12 seconds 15 C 2 C 6-12 seconds Average ramp-up rate (T smax to T P ) 3 C/second max. 3 C/second max. Liquidous temperature (T L ) Time at liquidous (t L ) Peak package body Temperature (T p )* Time (t P )** within 5 C of the specified classification temperature (T c ) Table 1. SnPb Eutectic Process Classification Temperatures (Tc) Package Volume mm 3 Thickness <35 Table 2. Pb-free Process Classification Temperatures (Tc) Volume mm 3 35 <2.5 mm 235 C 22 C 2.5 mm 22 C 22 C Package Thickness Volume mm 3 <35 Volume mm Volume mm 3 >2 <1.6 mm 26 C 26 C 26 C 1.6 mm 2.5 mm 26 C 25 C 245 C 2.5 mm 25 C 245 C 245 C Reliability Test Program 183 C 6-15 seconds 217 C 6-15 seconds See Classification Temp in table 1 See Classification Temp in table 2 2** seconds 3** seconds Average ramp-down rate (T p to T smax ) 6 C/second max. 6 C/second max. Time 25 C to peak temperature 6 minutes max. 8 minutes max. * Tolerance for peak profile Temperature (T p ) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (t p ) is defined as a supplier minimum and a user maximum. Test item Method Description SOLDERABILITY JESD-22, B12 5 Sec, 245 C HTRB JESD-22, A18 1 Hrs, 8% of VDS Tjmax HTGB JESD-22, A18 1 Hrs, 1% of VGS Tjmax PCT JESD-22, A Hrs, 1%RH, 2atm, 121 C TCT JESD-22, A14 5 Cycles, -65 C~15 C Customer Service Sinopower Semiconductor, Inc. 5F, No. 6, Dusing 1St Rd., Hsinchu Science Park, Hsinchu, 378, Taiwan TEL: Fax:
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