Supertex inc. LND150 N-Channel Depletion-Mode DMOS FET. Features. General Description. Applications. Product Summary. Ordering Information
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1 LND N-Channel Depletion-Mode DMOS FET Features Free from secondary breakdown Low power drive requirement Ease of paralleling Excellent thermal stability Integral source-drain diode High input impedance and low C ISS ESD gate protection pplications Solid state relays Normally-on switches Converters Power supply circuits Constant current sources Input protection circuits Ordering Information Part Number Package Options Packing LNDK-G TO-B (SOT-) /Reel LNDN-G TO-9 /Bag LNDN-G P TO-9 /Reel LNDN-G P TO-9 /Reel LNDN-G P TO-9 /Reel LNDN-G P TO-9 /Reel LNDN-G P TO-9 /Reel LNDN8-G TO- (SOT-89) /Reel -G denotes a lead (Pb)-free / RoHS compliant package bsolute Maximum Ratings Parameter Value Drain-to-source BX Drain-to-gate BV DGX Gate-to-source ±V Operating and storage temperature - O C to + O C bsolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. ll voltages are referenced to device ground. General Description The LND is a high voltage N-channel depletion mode (normally-on) transistor utilizing Supertex s lateral DMOS technology. The gate is ESD protected. The LND is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, voltage ramp generation and amplification. Product Summary BX /BV DGX Pin Configuration GTE DRIN TO-B (SOT-) (max) TO-9 DRIN GTE SS (min).kω.m DRIN GTE TO- (SOT-89) Product Marking NDEW Doc.# DSFP-LND W = Code for Week Sealed = Green Packaging TO-B (SOT-) SiLN D YYWW YY = Year Sealed WW = Week Sealed = Green Packaging TO-9 Packages may or may not include the following marks: Si or LNEW W = Code for Week Sealed = Green Packaging TO- (SOT-89)
2 Thermal Characteristics Package Electrical Characteristics (T = O C unless otherwise specified) Sym Parameter Min Typ Max Units Conditions BX Drain-to-source breakdown voltage - - V = -V, =.m (OFF) Gate-to-source off voltage V = V, = n Δ(OFF) Change in (OFF) with temperature - -. mv/ O C = V, = n I GSS Gate body leakage current - - n = ± V, = V (OFF) (continuous) (m) Notes: (continuous) is limited by max rated T j. Drain-to-source leakage current (pulsed) (m) Power = O C (W) - - n = -V, = V - - µ =.8V Max Rating, = -V, T = O C SS Saturated drain-to-source current. -. m = V, = V Static drain-to-source on-state resistance - 8 Ω = V, =.m Δ Change in with temperature - -. %/ O C = V, =.m G FS Forward transductance.. - m = V, =.m C ISS Input capacitance - 7. C OSS Common source output capacitance -.. C RSS Reverse transfer capacitance -.. t d(on) Turn-on delay time t r Rise time -. - t d(off) Turn-off delay time -. - t f Fall time -. - θ ja ( O C/W) pf µs = -V, = V, f =.MHz V DD = V, =.m, R GEN = Ω V SD Diode forward voltage drop V = -V, I SD =.m t rr Reverse recovery time - - ns = -V, I SD =.m Notes:. ll D.C. parameters % tested at O C unless otherwise stated. (Pulse test: µs pulse, % duty cycle.). ll.c. parameters sample tested. LND TO-B (SOT-). TO-9.7 TO- (SOT-89). Ω R (m) RM (m) Switching Waveforms and Test Circuit V INPUT -V % 9% Pulse Generator VDD R L OUTPUT t (ON) t (OFF) R GEN t d(on) t r t d(off) t f VDD OUTPUT % % INPUT D.U.T. V 9% 9% Doc.# DSFP-LND
3 LND Typical Performance Curves Output Characteristics Saturation Characteristics =.V =.V.V V.V V -.V -.V -.V -.V Transconductance vs. Drain Current 8 = V T = - C Power Dissipation vs. mbient Temperature TO- G FS (millisiemens) C C P D (Watts) TO-9 TO-B 8 T ( C) Maximum Rated Safe Operating rea. Thermal Response Characteristics. TO- (DC) TO-9 (DC) TO- (DC) T = C µs pulse % duty cycle Pulsed Thermal Resistance (normalized).8... TO- T = C P D =.W TO-9 P D =.W T C = C.... t P (seconds) Doc.# DSFP-LND
4 LND Typical Performance Curves (cont.) BS (normalized) BS Variation with Temperature = -.V C C vs R LND R.9. - T j ( O C). K K R (Ω) K Transfer Characteristics = V (OFF) and R DS Variation with Temperature.8. T = - C C C (OFF) =.m n...8 (normalized) T j ( O C) Capacitance vs. Drain-to-Source Voltage = -V Gate Drive Dynamic Characteristics 8.7pF C ISS C (picofarads) = V V V C OSS C RSS -... Q C (nanocoulombs) Doc.# DSFP-LND
5 -Lead TO-B (SOT-) Package Outline (K).9x.mm body,.mm height (max),.9mm pitch LND D E E. Gauge e e b L L Seating Top View View B View B Seating Side View View - Dimension (mm) Symbol b D E E e e L L θ MIN O.9.9. NOM BSC BSC REF MX O JEDEC Registration TO-, Variation B, Issue H, Jan This dimension differs from the JEDEC drawing. Drawings not to scale. Supertex Doc.#: DSPD-TOBK, Version C9. Doc.# DSFP-LND
6 -Lead TO-9 Package Outline (N) D LND Seating L e e Front View b c Side View E E Bottom View Dimensions (inches) Symbol b c D E E e e L MIN NOM MX * JEDEC Registration TO-9. * This dimension is not specified in the JEDEC drawing. This dimension differs from the JEDEC drawing. Drawings not to scale. Supertex Doc.#: DSPD-TO9N, Version E9. Doc.# DSFP-LND
7 -Lead TO- (SOT-89) Package Outline (N8) LND D D C E H E L b e e b Vqr"Xkgy Ukfg"Xkgy Dimensions (mm) (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate product liability indemnification insurance agreement. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the (website: http//) ll rights reserved. Unauthorized use or reproduction is prohibited. Doc.# DSFP-LND Symbol b b C D D E E e e H L MIN NOM BSC BSC - - MX JEDEC Registration TO-, Variation, Issue C, July 98. This dimension differs from the JEDEC drawing Drawings not to scale. Supertex Doc. #: DSPD-TON8, Version F. 7 Bordeaux Drive, Sunnyvale, C 989 Tel:
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