IRFH7911TR2PBF PQFN 5mm x 6mm Tape and Reel 400. Absolute Maximum Ratings Parameter Q1 Max. Q2 Max. Units

Transcription

1 PD A IRFH79PbF HEXFET Power MOSFET Q Q2 V DS 3 3 V R DS(on) max (@V GS = V) m: Q g (typical) nc I D (@T A = 25 C) 3 28 A Dual PQFN 5X6 mm Applications Control and synchronous MOSFET for buck converters Features and Benefits Features Absolute Maximum Ratings Parameter Q Max. Q2 Max. Units V DS Drain-to-Source Voltage 3 V V GS Gate-to-Source Voltage ± 2 I T A = 25 C Continuous Drain Current, V V 3 28 I T A = 7 C Continuous Drain Current, V V 23 A I DM Pulsed Drain Current c 23 P A = 25 C Power Dissipation W P A = 7 C Power Dissipation Linear Derating Factor g.9.27 W/ C T J Operating Junction and -55 to 5 C Storage Temperature Range T STG Benefits Control and synchronous FET in one package Increased power density (5% vs two PQFN 5x6) Low charge control MOSFET (8.3 nc typical) Lower switching losses Low R DSon synchronous MOSFET (< 3. mω) results in Lower conduction losses % Rg tested Increased reliability Low Profile (.9 mm) Increased power density Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL2, Industrial Qualification Orderable part num ber Package Type Standard Pack Form Quantity IRFH79TRPBF PQFN 5mm x 6mm Tape and Reel 4 IRFH79TR2PBF PQFN 5mm x 6mm Tape and Reel 4 Easier manufacturing Environmentally Friendlier Increased reliability Thermal Resistance Parameter Q Max. Q2 Max. Units R θjc Junction-to-Case f C/W R θja Junction-to-Ambient g Note /2/

2 IRFH79PbF (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BV DSS Drain-to-Source Breakdown Voltage Q&Q2 3 V V GS = V, I D = 25μA ΔΒV DSS /ΔT J Breakdown Voltage Temp. Coefficient Q.2 V/ C Reference to 25 C, I D = ma Q2.22 Q V GS = V, I D = 2A e R DS(on) Static Drain-to-Source On-Resistance. 4.5 mω V GS = 4.5V, I D = A e Q V GS = V, I D = 26A e V GS = 4.5V, I D = 2A e V GS(th) Gate Threshold Voltage Q&Q V Q: V DS = V GS, I D = 25μA ΔV GS(th) /ΔT J Gate Threshold Voltage Coefficient Q -6.8 mv/ C Q2: V DS = V GS, I D = μa Q2-6.4 I DSS Drain-to-Source Leakage Current Q&Q2. μa V DS = 24V, V GS = V Q&Q2 5 V DS = 24V, V GS = V, I GSS Gate-to-Source Forward Leakage Q&Q2 na V GS = 2V Gate-to-Source Reverse Leakage Q&Q2 - V GS = -2V gfs Forward Transconductance Q 7 S V DS = 5V, I D = A Q2 6 V DS = 5V, I D = 2A Q g Total Gate Charge Q Q Q gs Pre-Vth Gate-to-Source Charge Q 2. Q Q2 7.9 V DS = 5V Q gs2 Post-Vth Gate-to-Source Charge Q. nc V GS = 4.5V, I D = A Q2 3.6 Q gd Gate-to-Drain Charge Q 3.2 Q2 Q2 V DS = 5V Q godr Gate Charge Overdrive Q 2. V GS = 4.5V, I D = 2A Q2 2 Q sw Switch Charge (Q gs2 Q gd ) Q 4.2 Q2 5 Q oss Output Charge Q 5. nc V DS = 6V, V GS = V Q2 9 R G Gate Resistance Q.8 Ω Q2.7 t d(on) Turn-On Delay Time Q 2 Q Q2 22 V DD = 5V, V GS = 4.5V t r Rise Time Q 5 I D = A Q2 35 ns R G =.8Ω t d(off) Turn-Off Delay Time Q 2 Q2 Q2 28 V DD = 5V, V GS = 4.5V t f Fall Time Q 5.9 I D = 2A Q2 4 R G =.8Ω C iss Input Capacitance Q 6 Q2 445 V GS = V C oss Output Capacitance Q 23 pf V DS = 5V Q2 85 ƒ =.MHz C rss Reverse Transfer Capacitance Q Q2 44 Avalanche Characteristics Parameter Typ. Q Max. Q2 Max. Units E AS Single Pulse Avalanche Energy d 2 32 mj I AR Avalanche Current c 2 A Diode Characteristics Parameter Min. Typ. Max. Units I S Continuous Source Current Q 3. A (Body Diode) Q2 3. I SM Pulsed Source Current Q A (Body Diode)c Q2 23 V SD Diode Forward Voltage Q. V Q2. t rr Reverse Recovery Time Q 3 2 ns Q Q rr Reverse Recovery Charge Q 3 2 nc Q Conditions MOSFET symbol showing the integral reverse p-n junction diode., I S = A, V GS = V e, I S = 2A, V GS = V e Q, I F = A, V DD = 5V, di/dt = 3A/μs e Q2, I F = 2A, V DD = 5V, di/dt = 28A/μs e 2

3 Typical Characteristics IRFH79PbF Q - Control FET VGS TOP V 5.V 4.5V 3.5V 3.V 2.7V 2.5V BOTTOM 2.3V Q2 - Synchronous FET VGS TOP V 5.V 4.5V 3.5V 3.V 2.7V 2.5V BOTTOM 2.3V. 2.3V Tj = 25 C.. Fig. Typical Output Characteristics. 2.3V Tj = 25 C.. Fig 2. Typical Output Characteristics Tj = 5 C VGS TOP V 5.V 4.5V 3.5V 3.V 2.7V 2.5V BOTTOM 2.3V VGS TOP V 5.V 4.5V 3.5V 3.V 2.7V 2.5V BOTTOM 2.3V 2.3V 2.3V.. Fig 3. Typical Output Characteristics Tj = 5 C. Fig 4. Typical Output Characteristics T J = 5 C T J = 5 C. V DS = 5V V DS = 5V Fig 5. Typical Transfer Characteristics Fig 6. Typical Transfer Characteristics 3

4 C, Capacitance (pf) C, Capacitance (pf) IRFH79PbF Typical Characteristics Q - Control FET V GS = V, f = MHZ C iss = C gs C gd, C ds SHORTED Q2 - Synchronous FET V GS = V, f = MHZ C iss = C gs C gd, C ds SHORTED C rss = C gd C oss = C ds C gd C rss = C gd C oss = C ds C gd C iss C iss C oss C rss C oss C rss Fig 7. Typical Capacitance vs. Drain-to-Source Voltage Fig 8. Typical Capacitance vs. Drain-to-Source Voltage 4 2 I D = A V DS = 24V V DS= 5V 4 2 I D = 2A V DS = 24V V DS= 5V Q g, Total Gate Charge (nc) Fig 9. Typical Gate Charge vs. Gate-to-Source Voltage OPERATION IN THIS AREA LIMITED BY R DS (on) μsec Q g, Total Gate Charge (nc) Fig. Typical Gate Charge vs. Gate-to-Source Voltage OPERATION IN THIS AREA LIMITED BY R DS (on) μsec msec msec msec msec. Tc = 25 C Tj = 5 C Single Pulse... Tc = 25 C Tj = 5 C Single Pulse... Fig. Maximum Safe Operating Area Fig 2. Maximum Safe Operating Area 4

5 R DS (on), Drain-to -Source On Resistance (mω) R DS (on), Drain-to -Source On Resistance (mω) I SD, Reverse Drain Current (A) I SD, Reverse Drain Current (A) R DS(on), Drain-to-Source On Resistance (Normalized) R DS(on), Drain-to-Source On Resistance (Normalized) Typical Characteristics IRFH79PbF Q - Control FET Q2 - Synchronous FET 2. I D = 2A V GS = V 2. I D = 26A V GS = V T J, Junction Temperature ( C) Fig 3. Normalized On-Resistance vs. Temperature T J, Junction Temperature ( C) Fig 4. Normalized On-Resistance vs. Temperature T J = 5 C T J = 5 C.. V GS = V V SD, Source-to-Drain Voltage (V) Fig 5. Typical Source-Drain Diode Forward Voltage V GS = V V SD, Source-to-Drain Voltage (V) Fig 6. Typical Source-Drain Diode Forward Voltage 25 I D = 3A 2 I D = 26A Fig 7. Typical On-Resistance vs.gate Voltage Fig 8. Typical On-Resistance vs.gate Voltage 5

6 E AS, Single Pulse Avalanche Energy (mj) E AS, Single Pulse Avalanche Energy (mj) V GS(th) Gate threshold Voltage (V) V GS(th) Gate threshold Voltage (V) I D, Drain Current (A) I D, Drain Current (A) IRFH79PbF Typical Characteristics 4 Q - Control FET 3 Q2 - Synchronous FET T A, Ambient Temperature ( C) Fig 9. Maximum Drain Current vs. Ambient Temp T A, Ambient Temperature ( C) Fig 2. Maximum Drain Current vs. Ambient Temp I D = 25μA 2. I D = 25μA T J, Temperature ( C ) Fig 2. Threshold Voltage vs. Temperature T J, Temperature ( C ) Fig 22. Threshold Voltage vs. Temperature I D TOP 2.3A 3.A BOTTOM A I D TOP 5.4A 6.6A BOTTOM 2A Starting T J, Junction Temperature ( C) Starting T J, Junction Temperature ( C) Fig 23. Maximum Avalanche Energy vs. Drain Current Fig 24. Maximum Avalanche Energy vs. Drain Current 6

7 IRFH79PbF Thermal Response ( Z thja ) D = SINGLE PULSE ( THERMAL RESPONSE ) E-6 E t, Rectangular Pulse Duration (sec) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthja Tc Fig 25. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient (Q) Thermal Response ( Z thja ) D = SINGLE PULSE ( THERMAL RESPONSE ) E-6 E t, Rectangular Pulse Duration (sec) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthja Tc Fig 26. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient (Q2) 7

8 IRFH79PbF - D.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - Reverse Recovery Current Driver Gate Drive Period P.W. D.U.T. I SD Waveform Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt D = P.W. Period V GS =V V DD * R G dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD - Re-Applied Voltage Body Diode Inductor Curent Current Forward Drop Ripple 5% I SD * V GS = 5V for Logic Level Devices Fig 28. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs 5V tp V (BR)DSS V DS L DRIVER R G 2V V GS tp D.U.T I AS.Ω - V DD A I AS Fig 29a. Unclamped Inductive Test Circuit Fig 29b. Unclamped Inductive Waveforms V DS R D V DS V GS D.U.T. 9% R G - V DD VV GS Pulse Width µs Duty Factor. % % V GS t d(on) t r t d(off) t f Fig 3a. Switching Time Test Circuit Current Regulator Same Type as D.U.T. Fig 3b. Switching Time Waveforms Vds Id 2V.2μF 5KΩ.3μF Vgs D.U.T. V - DS V GS Vgs(th) 3mA I G I D Current Sampling Resistors Qgs Qgs2 Qgd Qgodr Fig 3a. Gate Charge Test Circuit Fig 3b. Gate Charge Waveform 8

9 IRFH79PbF PQFN 5x6 Outline "C" Package Details For footprint and stencil design recommendations, please refer to application note AN-52 at PQFN 5x6 Outline "C" Part Marking INTERNATIONAL RECTIFIER LOGO DATE CODE ASSEMBLY SITE CODE (Per SCOP 2-2) PIN IDENTIFIER XXXX XYWWX XXXXX PART NUMBER ( 4 or 5 digits ) MARKING CODE (Per Marking Spec) LOT CODE (Eng Mode - Min last 4 digits of EATI#) (Prod Mode - 4 digits of SPN code) Note: For the most current drawing please refer to IR website at: 9

10 IRFH79PbF PQFN 5x6 Outline "C" Tape and Reel Note: For the most current drawing please refer to IR website at: Qualification information Qualification level Moisture Sensitivity Level RoHS compliant Qualification standards can be found at International Rectifier s web site Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: Applicable version of JEDEC standard at the time of product release. Higher MSL ratings may be available for the specific package types listed here. Please contact your International Rectifier sales representative for further information: Revision History Date Comment /8/2 Pin number on front page drawing has been corrected Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting, Q: L =.23mH, R G = 25Ω, I AS = A; Q2: L =.5mH, R G = 25Ω, I AS = 2A. ƒ Pulse width 4μs; duty cycle 2%. When mounted on inch square copper board. R θ is measured at T J approximately 9 C. Cons umer (per JEDE C JE S D47F guidelines ) MS L2 PQFN 5mm x 6mm (per JEDEC J-S TD-2D ) Yes Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 9245, USA Tel: (3) TAC Fax: (3) Visit us at for sales contact information. /