HEXFET Power MOSFET V DSS = -20V. R DS(on) = 0.065Ω
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1 PD D IRLML6402 HEXFET Power MOSFET Utra Low On-Resistance P-Channe MOSFET SOT-23 Footprint Low Profie (<.mm) Avaiabe in Tape and Ree Fast Switching G S 2 3 D V DSS = -20V R DS(on) = 0.065Ω Description These P-Channe MOSFETs from Internationa Rectifier utiize advanced processing techniques to achieve extremey ow onresistance per siicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are we known for, provides the designer with an extremey efficient and reiabe device for use in battery and oad management. A thermay enhanced arge pad eadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smaest footprint. This package, dubbed the Micro3, is idea for appications where printed circuit board space is at a premium. The ow profie (<.mm) of the Micro3 aows it to fit easiy into extremey thin appication environments such as portabe eectronics and PCMCIA cards. The therma resistance and power dissipation are the best avaiabe. Absoute Maximum Ratings Micro3 Parameter Max. Units V DS Drain- Source Votage -20 V I T A = 25 C Continuous Drain Current, V -4.5V -3.7 I T A = 70 C Continuous Drain Current, V -4.5V -2.2 A I DM Pused Drain Current -22 P A = 25 C Power Dissipation.3 P A = 70 C Power Dissipation 0.8 W Linear Derating Factor 0.0 W/ C E AS Singe Puse Avaanche Energy mj V GS Gate-to-Source Votage ± 2 V T J, T STG Junction and Storage Temperature Range -55 to + 50 C Therma Resistance Parameter Typ. Max. Units R θja Maximum Junction-to-Ambientƒ 75 0 C/W 2/4/
2 Eectrica T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Votage -20 V V GS = 0V, I D = -250μA ΔV (BR)DSS/ΔT J Breakdown Votage Temp. Coefficient V/ C Reference to 25 C, I D = -ma V GS = -4.5V, I D = -3.7A R DS(on) Static Drain-to-Source On-Resistance Ω V GS = -2.5V, I D = -3.A V GS(th) Gate Threshod Votage V V DS = V GS, I D = -250μA g fs Forward Transconductance 6.0 S V DS = -V, I D = -3.7A I DSS Drain-to-Source Leakage Current -.0 V DS = -20V, V GS = 0V µa -25 V DS = -20V, V GS = 0V, T J = 70 C I GSS Gate-to-Source Forward Leakage -0 V GS = -2V na Gate-to-Source Reverse Leakage 0 V GS = 2V Q g Tota Gate Charge I D = -3.7A Q gs Gate-to-Source Charge.2.8 nc V DS = -V Q gd Gate-to-Drain ("Mier") Charge V GS = -5.0V t d(on) Turn-On Deay Time 350 V DD = -V t r Rise Time 48 I D = -3.7A ns t d(off) Turn-Off Deay Time 588 R G = 89Ω t f Fa Time 38 R D = 2.7Ω C iss Input Capacitance 633 V GS = 0V C oss Output Capacitance 45 pf V DS = -V C rss Reverse Transfer Capacitance ƒ =.0MHz Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current MOSFET symbo -.3 (Body Diode) showing the A I SM Pused Source Current integra reverse G -22 (Body Diode) p-n junction diode. S V SD Diode Forward Votage -.2 V T J = 25 C, I S = -.0A, V GS = 0V t rr Reverse Recovery Time ns T J = 25 C, I F = -.0A Q rr Reverse RecoveryCharge 7 nc di/dt = -0A/μs Notes: Repetitive rating; puse width imited by max. junction temperature. Puse width 400μs; duty cyce 2%. ƒ Surface mounted on " square singe ayer oz. copper FR4 board, steady state. Starting T J = 25 C, L =.65mH R G = 25Ω, I AS = -3.7A. ** For recommended footprint and sodering techniques refer to appication note #AN
3 -I D, Drain-to-Source Current (A) 0 VGS TOP -7.00V -5.00V -4.50V -3.50V -3.00V -2.70V -2.50V BOTTOM -2.25V -2.25V 20μs PULSE WIDTH T J = 25 C V DS, Drain-to-Source Votage (V) -I D, Drain-to-Source Current (A) 0 VGS TOP -7.00V -5.00V -4.50V -3.50V -3.00V -2.70V -2.50V BOTTOM -2.25V -2.25V 20μs PULSE WIDTH T J = 50 C V DS, Drain-to-Source Votage (V) Fig. Typica Output Characteristics Fig 2. Typica Output Characteristics -I D, Drain-to-Source Current (A) 0 T J = 25 C T J = 50 C V DS= -5V 20μs PULSE WIDTH V GS, Gate-to-Source Votage (V) R DS(on), Drain-to-Source On Resistance (Normaized) 2.0 I D = -3.7A V GS= -4.5V T J, Junction Temperature ( C) Fig 3. Typica Transfer Characteristics Fig 4. Normaized On-Resistance Vs. Temperature 3
4 C, Capacitance(pF) IRLML Ciss Coss Crss V GS = 0V, f = MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd 0 V DS, Drain-to-Source Votage (V) Fig 5. Typica Capacitance Vs. Drain-to-Source Votage -V GS, Gate-to-Source Votage (V) I = D -3.7A V DS =-V FOR TEST CIRCUIT SEE FIGURE Q G, Tota Gate Charge (nc) Fig 6. Typica Gate Charge Vs. Gate-to-Source Votage -I SD, Reverse Drain Current (A) 0 T J = 50 C T J = 25 C V GS = 0 V V SD,Source-to-Drain Votage (V) -I I D, Drain Current (A) 0 OPERATION IN THIS AREA LIMITED BY R DS(on) us 0us ms ms TC = 25 C TJ = 50 C Singe Puse V DS, Drain-to-Source Votage (V) Fig 7. Typica Source-Drain Diode Forward Votage Fig 8. Maximum Safe Operating Area 4
5 -I D, Drain Current (A) T C, Case Temperature ( C) E AS, Singe Puse Avaanche Energy (mj) I D TOP -.7A -3.0A BOTTOM -3.7A Starting T, Junction Temperature ( J C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig. Maximum Avaanche Energy Vs. Drain Current 00 Therma Response (Z thja ) 0 D = PDM t SINGLE PULSE (THERMAL RESPONSE) t2 Notes:. Duty factor D = t / t 2 2. Peak T J= P DM x Z thja + TA t, Rectanguar Puse Duration (sec) Fig. Maximum Effective Transient Therma Impedance, Junction-to-Ambient 5
6 R DS(on), Drain-to -Source Votage ( Ω ) R DS ( on ), Drain-to-Source On Resistance ( Ω ) IRLML VGS = -2.5V Id = -3.7A 0.08 VGS = -4.5V V GS, Gate -to -Source Votage ( V ) I D, Drain Current ( A ) Fig 2. Typica On-Resistance Vs. Gate Votage Fig 3. Typica On-Resistance Vs. Drain Current 6
7 Micro3 (SOT-23) (Lead-Free) Package Outine Dimensions are shown in miimeters (inches) A 5 A A2 6 B E e 3 6 D 2 3X e b 0.20 [0.008] 0. [0.004] C M C C B A A 5 E 0.5 [0.006] M C B A H 4 L 3X L 7 L2 c DIMENSIONS SYMBOL MILLIMETERS INCHES MIN MAX MIN MAX A A A b c D E E e 0.95 BSC %6& e.90 BSC %6& L L 0.54 REF REF L BSC BSC Recommended Footprint NOTES: DIMENSIONING & TOLERANCING PER ANSI Y4.5M DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 3. CONTROLLING DIMENSION: MILLIMETER. 4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE. 5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H. 6. DIMENSIONS D AND E ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.0 INCH] PER SIDE. 7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE. 8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB. Micro3 (SOT-23 / TO-236AB) Part Marking Information Micro3 / SOT-23 Package Marking PART NUMBER HALOGEN FREE INDICATOR A YW LC Y = YEAR W = WEEK LOT CODE PART NUMBER CODE REFERENCE: A = IRLML2402 B =IRLML2803 C = IRLML2402 D = IRLML53 E = IRLML6402 F = IRLML640 G = IRLML2502 H = IRLML5203 Note: A ine above the work week (as shown here) indicates Lead-free W = (-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR YEAR Y WORK WE EK W 0 A 02 B 03 C 04 D X Y Z W = (27-52) IF PRECEDED BY A LETTER WORK YEAR Y WE EK W 200 A 27 A 2002 B 28 B 2003 C 29 C 2004 D 30 D 2005 E 2006 F 2007 G 2008 H 2009 J 20 K 50 X 5 Y 52 Z Note: For the most current drawing pease refer to IR website at 7
8 Micro3 (SOT-23/TO-263AB) Tape & Ree Information Dimensions are shown in miimeters (inches) 2.05 (.080 ).95 (.077 ) 4. (.6 ) 3.9 (.54 ).6 (.062 ).5 (.060 ).85 (.072 ).65 (.065 ).32 (.05 ).2 (.045 ) TR 3.55 (.39 ) 3.45 (.36 ) 8.3 (.326 ) 7.9 (.32 ) FEED DIRECTION 4. (.6 ) 3.9 (.54 ). (.043 ) 0.9 (.036 ) 0.35 (.03 ) 0.25 (.0 ) ( ) MAX (.390 ) 8.40 (.33 ) NOTES:. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-48 & EIA-54. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: N.Sepuveda Bvd, E Segundo, Caifornia 90245, USA Te: (3) TAC Fax: (3) Visit us at for saes contact information. 2/20 8
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