IRLML6246TRPbF HEXFET Power MOSFET

Transcription

1 V DS 20 V V GS Max ± 2 V R DS(on) max (@V GS = 4.5V) R DS(on) max (@V GS = 2.5V) 46 m: 66 m: G S HEXFET Power MOSFET 2 3 D PD A Micro3 TM (SOT-23) Application(s) Load/ System Switch Features and Benefits Features Benefits Industry-standard SOT-23 Package Multi-vendor compatibility RoHS compliant containing no lead, no bromide and no halogen results in Environmentally friendly Absolute Maximum Ratings Symbol Parameter Max. Units V DS Drain-Source Voltage 20 V I T A = 25 C Continuous Drain Current, V 0V 4. I T A = 70 C Continuous Drain Current, V 0V 3.3 A I DM Pulsed Drain Current 6 P A = 25 C Maximum Power Dissipation.3 P A = 70 C Maximum Power Dissipation 0.8 W Linear Derating Factor 0.0 W/ C V GS Gate-to-Source Voltage ± 2 V T J, T STG Junction and Storage Temperature Range -55 to + 50 C Thermal Resistance Symbol Parameter Typ. Max. Units R θja Junction-to-Ambient e R θja Junction-to-Ambient (t<0s) f 99 ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet. Notes through are on page 0 C/W 0/2/2

2 Electric T J = 25 C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V (BR)DSS Drain-to-Source Breakdown Voltage 20 V ΔV (BR)DSS /ΔT J Breakdown Voltage Temp. Coefficient 0.03 V/ C Reference to 25 C, I D = ma R DS(on) Static Drain-to-Source On-Resistance V GS = 4.5V, I D = 4.A d mω V GS = 2.5V, I D = 3.3A d V GS(th) Gate Threshold Voltage V V DS = V GS, I D = 5μA I DSS.0 V DS =6V, V GS = 0V Drain-to-Source Leakage Current 0 μa V DS = 6V, V GS = 0V, T J = 55 C 50 V DS = 6V, V GS = 0V, T J = 25 C I GSS Gate-to-Source Forward Leakage na V GS = 2V Gate-to-Source Reverse Leakage - V GS = -2V R G Internal Gate Resistance 4.0 Ω gfs Forward Transconductance 0 S V DS = 0V, I D = 4.A Q g Total Gate Charge 3.5 I D = 4.A Q gs Gate-to-Source Charge 0.26 nc V DS =0V Q gd Gate-to-Drain ("Miller") Charge.7 V GS = 4.5V d t d(on) Turn-On Delay Time 3.6 V DD =0Vd t r Rise Time 4.9 ns I D =.0A t d(off) Turn-Off Delay Time R G = 6.8Ω t f Fall Time 6.0 V GS = 4.5V C iss Input Capacitance 290 V GS = 0V C oss Output Capacitance 64 pf V DS = 6V C rss Reverse Transfer Capacitance 4 ƒ =.0MHz Source - Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units I S Continuous Source Current.3 (Body Diode) A I SM Pulsed Source Current (Body Diode)Ãc 6 V SD Diode Forward Voltage.2 V t rr Reverse Recovery Time ns Q rr Reverse Recovery Charge nc integral reverse p-n junction diode. T J = 25 C, I S = 4.A, V GS = 0V d T J = 25 C, V R = 5V, I F =.3A di/dt = A/μs d Conditions V GS = 0V, I D = 250μA MOSFET symbol showing the Conditions G D S 2

3 I D, Drain-to-Source Current (A) R DS(on), Drain-to-Source On Resistance (Normalized) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) 60μs PULSE WIDTH Tj = 25 C 60μs PULSE WIDTH Tj = 50 C V VGS TOP 0V 4.5V 3.0V 2.5V 2.3V 2.0V.8V BOTTOM.5V V DS, Drain-to-Source Voltage (V) VGS TOP 0V.5V 4.5V 3.0V 2.5V 2.3V 2.0V.8V BOTTOM.5V V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.0 I D = 4.A V GS = 4.5V 0.5 T J = 50 C T J = 25 C.0 V DS = 5V 60μs PULSE WIDTH V GS, Gate-to-Source Voltage (V) T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3

4 I SD, Reverse Drain Current (A) I D, Drain-to-Source Current (A) C, Capacitance (pf) V GS, Gate-to-Source Voltage (V) 00 0 V GS = 0V, f = MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd I D = 4.A V DS = 6V V DS = 0V V DS = 4.0V C iss 8.0 C oss C rss V DS, Drain-to-Source Voltage (V) Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage OPERATION IN THIS AREA LIMITED BY R DS (on) 0 0 μsec msec T J = 50 C 0 T J = 25 C V GS = 0V V SD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 0. T A = 25 C 0msec Tj = 50 C Single Pulse V DS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 4

5 I D, Drain Current (A) 5.0 V DS R D R G V GS V GS Pulse Width µs Duty Factor 0. % D.U.T. + - V DD.0 Fig 0a. Switching Time Test Circuit T A, Ambient Temperature ( C) V DS 90% Fig 9. Maximum Drain Current Vs. Ambient Temperature 0% V GS t d(on) t r t d(off) t f Fig 0b. Switching Time Waveforms 0 Thermal Response ( Z thja ) 0 D = SINGLE PULSE ( THERMAL RESPONSE ) E-006 E t, Rectangular Pulse Duration (sec) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc + Tc Fig. Typical Effective Transient Thermal Impedance, Junction-to-Ambient 5

6 R DS(on), Drain-to -Source On Resistance (mω) R DS (on), Drain-to -Source On Resistance ( mω) I D = 4.A T J = 25 C 60 Vgs = 4.5V 40 Vgs = 0V T J = 25 C V GS, Gate -to -Source Voltage (V) I D, Drain Current (A) Fig 2. Typical On-Resistance Vs. Gate Voltage Fig 3. Typical On-Resistance Vs. Drain Current Id Vds Vgs Vgs(th) 0 20K K DUT L VCC Qgodr Qgd Qgs2 Qgs Fig 4a. Basic Gate Charge Waveform Fig 4b. Gate Charge Test Circuit 6

7 V GS(th), Gate threshold Voltage (V) Power (W) I D = 0uA I D = 250uA T J, Temperature ( C ) Fig 5. Typical Threshold Voltage Vs. Junction Temperature 0 E Time (sec) Fig 6. Typical Power Vs. Time 7

8 Micro3 (SOT-23) Package Outline Dimensions are shown in millimeters (inches) 5 6 B 6 A 5 D 3 E E 0.5 [0.006] M CBA 2 e e H 4 L c A A2 C 0.0 [0.004] C A 3X b 0.20 [0.008] M C B A NOTES: Recommended Footprint DIMENSIONS SYMBOL MILLIMETERS INCHES MIN MAX MIN MAX A A A b c D E E e 0.95 BSC %6& e.90 BSC %6& L L 0.54 REF REF L BSC BSC L X L DIMENSIONING & TOLERANCING PER ANSI Y4.5M DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 3. CONTROLLING DIMENSION: MILLIMETER. 4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE. 5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H. 6. DIMENSIONS D AND E ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.00 INCH] PER SIDE. 7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE. 8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB. Micro3 (SOT-23) Part Marking Information DATE CODE PART NUMBER Cu WIRE HALOGEN FREE X = PART NUMBER CODE REFERENCE: A = IRLML2402 B = IRLML2803 C = IRLML6302 D = IRLML503 E = IRLML6402 F = IRLML640 G = IRLML2502 H = IRLML5203 I = IRLML0030 J = IRLML2030 K = IRLML0 L = IRLML0060 M = IRLML0040 N = IRLML2060 P = IRLML930 R = IRLML9303 LOT CODE S = IRLML6244 T = IRLML6246 U= IRLML6344 V = IRLML6346 Note: A line above the work week (as shown here) indicates Lead - Free. LEAD FREE W = (-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR YEAR Y W = (27-52) IF PRECEDED BY A LETTER YEAR Y WORK WE EK W 0 A 02 B 03 C 04 D WORK WE EK X Y Z W 200 A 27 A 2002 B 28 B 2003 C 29 C 2004 D 30 D 2005 E 2006 F 2007 G 2008 H 2009 J 200 K 50 X 5 Y 52 Z Note: For the most current drawing please refer to IR website at: 8

9 Micro3 (SOT-23) Tape & Reel Information Dimensions are shown in millimeters (inches) 2.05 (.080 ).95 (.077 ) 4. (.6 ) 3.9 (.54 ).6 (.062 ).5 (.060 ).85 (.072 ).65 (.065 ).32 (.05 ).2 (.045 ) TR 3.55 (.39 ) 3.45 (.36 ) 8.3 (.326 ) 7.9 (.32 ) FEED DIRECTION 4. (.6 ) 3.9 (.54 ). (.043 ) 0.9 (.036 ) 0.35 (.03 ) 0.25 (.00 ) ( ) MAX (.390 ) 8.40 (.33 ) NOTES:. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-48 & EIA-54. Note: For the most current drawing please refer to IR website at: 9

10 Orderable part number Package Type Standard Pack Form Quantity Micro3 (SOT-23) Tape and Reel 3000 Note Qualification information Qualification level Moisture Sensitivity Level RoHS compliant Consumer (per JEDEC JESD47F guidelines ) MSL Micro3 (SOT-23) (per IPC/JEDEC J-STD-020D ) Yes Qualification standards can be found at International Rectifier s web site Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: Applicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400μs; duty cycle 2%. ƒ Surface mounted on in square Cu board Refer to application note #AN-994. Revision History Date Comments 0/2/202 Added 6V, T J = 55C-pg2 Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 0N. Sepulveda blvd, El Segundo, California 90245, USA Tel: (30) TAC Fax: (30) Visit us at for sales contact information.0/