Features Benefits Description TO-247AC (Modified) Absolute Maximum Ratings Parameter Max Units

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1 Bulletin PD rev. B /4 HEXFRED TM HFA5PB6 Ultrafast, Soft Recovery Diode Features Ultrafast Recovery Ultrasoft Recovery Very Low I RRM Very Low Q rr Specified at Operating Conditions Benefits Reduced RFI and EMI Reduced Power Loss in Diode and Switching Transistor Higher Frequency Operation Reduced Snubbing Reduced Parts Count BASE CATHODE 4 3 CATHODE ANODE V R = 6V V F (typ.)* =.3V I F(AV) = 5A Q rr (typ.)= nc I RRM = A t rr (typ.) = 3ns di (rec)m /dt (typ.) = 5A/µs Description International Rectifier's HFA5PB6 is a state of the art ultra fast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 6 volts and 5 amps continuous current, the HFA5PB6 is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line features extremely low values of peak recovery current (I RRM ) and does not exhibit any tendency to "snap-off" during the t b portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED HFA5PB6 is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. TO-47AC (Modified) Absolute Maximum Ratings Parameter Max Units V R Cathode-to-Anode Voltage 6 V I T C = 5 C Continuous Forward Current I T C = C Continuous Forward Current 5 I FSM Single Pulse Forward Current 5 A I FRM Maximum Repetitive Forward Current P T C = 5 C Maximum Power Dissipation 5 P T C = C Maximum Power Dissipation 6 W T Operating unction and Storage Temperature Range -55 to +5 C T STG * 5 C /9/4

2 Bulletin PD-.338 rev. B /4 Electrical (unless otherwise specified) Parameter Min Typ Max Units Test Conditions V BR Cathode Anode Breakdown Voltage 6 V I R = µa.3.7 I F = 5A V FM Max Forward Voltage.5. V I F = 5A See Fig..3.7 I F = 5A, T = 5 C I RM Max Reverse Leakage Current.5 V R = V R Rated See Fig. µa 6 T = 5 C, V R =.8 x V R Rated D Rated C T unction Capacitance 55 pf V R = V See Fig. 3 L S Series Inductance nh Measured lead to lead 5mm from package body Dynamic Recovery (unless otherwise specified) Parameter Min Typ Max Units Test Conditions t rr Reverse Recovery Time 3 I F =.A, di f /dt = A/µs, V R = 3V t rr See Fig. 5 & 5 75 ns t rr 5 6 T = 5 C I F = 5A I RRM Peak Recovery Current 4.5 A I RRM See Fig. 6 & 8. 5 T = 5 C V R = V Q rr Reverse Recovery Charge 375 nc Q rr See Fig. 7 & 4 T = 5 C di f /dt = A/µs di (rec)m /dt Peak Rate of Fall of Recovery Current 5 A/µs di (rec)m /dt During t b See Fig. 8 & 6 T = 5 C Thermal - Mechanical Characteristics Parameter Min Typ Max Units T lead Lead Temperature 3 C R thc Thermal Resistance, unction to Case.83 R tha Thermal Resistance, unction to Ambient 4 K/W R thcs ƒ Thermal Resistance, Case to Heat Sink.5 Wt Weight Mounting Torque g Kg-cm 5.. (oz) lbf in.63 in. from Case (.6mm) for sec Typical Socket Mount ƒ Mounting Surface, Flat, Smooth and Greased

3 Bulletin PD-.338 rev. B /4 Instantaneous Forward Current - IF (A) T = 5 C T = 5 C T = 5 C Forward Voltage Drop - V FM (V) Fig. - Maximum Forward Voltage Drop vs. Instantaneous Forward Current unction Capacitance -CT (pf) Reverse Current - IR (µa) Fig. - Typical Reverse Current vs. Reverse Voltage A T = 5 C T = 5 C Reverse Voltage - V R (V) T = 5 C Reverse Voltage - V R(V) Fig. 3 - Typical unction Capacitance vs. Reverse Voltage Thermal Response (Z thc ). D = t. SINGLE PULSE t. (THERMAL RESPONSE) Notes:. Duty factor D = t / t.. Peak T = P DM x Z thc + TC..... t, Rectangular Pulse Duration (sec) PDM Fig. 4 - Maximum Thermal Impedance Z thjc Characteristics 3

4 Bulletin PD-.338 rev. B /4 4 I F = 5A I F = 5A I F = A 3 5 T = 5 C trr- (nc) 8 Irr- ( A) 5 I F = 5A I F = 5A I F = A 6 4 T = 5 C di f /dt - (A/µs) Fig. 5 - Typical Reverse Recovery vs. di f /dt 5 di f/dt - (A/µs) Fig. 6 - Typical Recovery Current vs. di f /dt 4 T = 5 C T = 5 C Qrr- (nc) 8 6 I F = 5A I F = 5A I F = A di (rec) M/dt- (A /µs) I F = 5A I F = 5A I F = A 4 di f /dt - (A/µs) Fig. 7 - Typical Stored Charge vs. di f /dt di f /dt - (A/µs) Fig. 8 - Typical di (rec)m /dt vs. di f /dt 4

5 Bulletin PD-.338 rev. B /4 REVERSE RECOVERY CIRCUIT dif/dt ADUST L = 7µH G V R = V. Ω Fig. 9 - Reverse Recovery Parameter Test Circuit D S IRFP5 D.U.T. I F di /dt f t a. di f/dt - Rate of change of current through zero crossing. I RRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going I F to point where a line passing through.75 I RRM and.5 I RRM extrapolated to zero current 3 trr I RRM 4. Q rr - Area under curve defined by t rr and I RRM t rr X I RRM Q rr = 5. di (rec)m/dt - Peak rate of change of current during t b portion of t rr Fig. - Reverse Recovery Waveform and Definitions t b 4 Q rr.5 I RRM di(rec)m/dt 5.75 I RRM 5

6 Bulletin PD-.338 rev. B /4 Conforms to EDEC Outline TO-47AC MODIFIED Dimensions in millimeters and inches IR WORLD HEADQUARTERS: 33 Kansas St., El Segundo, California 945, USA Tel: (3) 5-75 TAC Fax: (3) Visit us at for sales contact information./4 6

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