AOT402 N-Channel Enhancement Mode Field Effect Transistor

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1 AOT42 N-Channel Enhancement Mode Field Effect Transistor General Description The AOT42 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOT42 is Pb-free (meets ROHS & Sony 259 specifications). AOT42L is a Green Product ordering option. AOT42 and AOT42L are electrically identical. Features V DS (V) = 5V I D = A (V GS = V) R DS(ON) <. mω (V GS = I D = 3A R DS(ON) < mω (V GS = V) TO-22 D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings T A = unless otherwise noted Parameter Symbol Maximum Drain-Source Voltage 5 Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current C Power Dissipation B T C = Junction and Storage Temperature Range V DS V GS I DM I AR E AR T J, T STG ±25 T C = T C = C I D 5 Avalanche Current C Repetitive avalanche energy L=.3mH C 54 T C = C P D to 75 Units V V A A mj W C Thermal Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-Ambient A Steady-State R θja 47 C/W Maximum Junction-to-Case B Steady-State R θjc.25.5 C/W

2 AOT42 Electrical Characteristics (T J = unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV DSS Drain-Source Breakdown Voltage I D =ma, V GS =V 5 V I DSS Zero Gate Voltage Drain Current V DS =4V, V GS =V T J =55 C 5 µa I GSS Gate-Body leakage current V DS =V, V GS =±25V na V GS(th) Gate Threshold Voltage V DS =V GS, I D =25µA V I D(ON) On state drain current V GS =V, V DS =5V 2 A V GS =V, I D =3A.9. R DS(ON) Static Drain-Source On-Resistance T J = 2. 5 mω V GS =V, I D =3A 7.9 mω g FS Forward Transconductance V DS =5V, I D =3A S V SD Diode Forward Voltage I S =A, V GS =V.7 V I S Maximum Body-Diode Continuous Current A DYNAMIC PARAMETERS C iss Input Capacitance 7.7 nf C oss Output Capacitance V GS =V, V DS =25V, f=mhz 2 pf C rss Reverse Transfer Capacitance 3 pf R g Gate resistance V GS =V, V DS =V, f=mhz.25 2 Ω SWITCHING PARAMETERS Q g (V) Total Gate Charge 2 23 nc Q gs Gate Source Charge V GS =V, V DS =25V, I D =3A 54 nc Q gd Gate Drain Charge 44 nc t D(on) Turn-On DelayTime 3.5 ns t r Turn-On Rise Time V GS =V, V DS =25V, R L =.75Ω, 42.5 ns t D(off) Turn-Off DelayTime R GEN =3Ω ns t f Turn-Off Fall Time ns t rr Body Diode Reverse Recovery Time I F =3A, di/dt=a/µs 5 ns Q rr Body Diode Reverse Recovery Charge I F =3A, di/dt=a/µs 375 nc A: The value of R θja is measured with the device in a still air environment with T A =. B. The power dissipation P D is based on T J(MAX) =75 C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX) =75 C. D. The R θja is the sum of the thermal impedence from junction to case R θjc and case to ambient. E. The static characteristics in Figures to are obtained using <3 µs pulses, duty cycle.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) =75 C. G. The maximum current rating is limited by bond-wires. Rev: Sept. 25 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

3 AOT V V 5V V DS =5V V V GS =4V Fig : On-Region Characteristics Figure 2: Transfer Characteristics 2.4 R DS(ON) (mω) R DS(ON) (mω) V GS =V V GS =V Figure 3: On-Resistance vs. Drain Current and Gate Voltage I D =3A Figure 5: On-Resistance vs. Gate-Source Voltage Normalized On-Resistance I S (A) Temperature ( C) Figure 4: On-Resistance vs. Junction Temperature.E+2.E+.E+.E-.E-2.E-3 V GS =V I D =3A V GS =V I D =3A.E V SD (Volts) Figure : Body-Diode Characteristics

4 AOT42 2 V DS =25V I D =3A C iss 4 Capacitance (pf) C oss Crss Q g (nc) Figure 7: Gate-Charge Characteristics 2 4 Figure : Capacitance Characteristics.. R DS(ON) limited T J(Max) =75 C, T A = µs T J(Max) =75 C T A = I D (Amps). µs ms Power (W). DC 4.. Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Pulse Width (s) Figure : Single Pulse Power Rating Junctionto-Case (Note F) Z θjc Normalized Transient Thermal Resistance. D=T on /T T J,PK =T A +P DM.Z θjc.r θjc R θjc =.5 C/W Single Pulse In descending order D=.5,.3,.,.5,.2,., single pulse Pulse Width (s) Figure : Normalized Maximum Transient Thermal Impedance (Note F) P D T on T

5 AOT , Peak Avalanche Current 4 2 T=5 C T= Power Dissipation (W) Time in avalanche, t A (s) Figure 2: Single Pulse Avalanche capability T CASE ( C) Figure 3: Power De-rating (Note B) 2 Current rating T CASE ( C) Figure 4: Current De-rating (Note B)

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