Features. I-PAK FQU Series

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1 00V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, and motor control. Features October 008 QFET 5.5A, 00V, R DS(on) = = 10 V Low gate charge ( typical 6.8 nc) Low Crss ( typical 8.5 pf) Fast switching 100% avalanche tested Improved dv/dt capability Low level gate drive requirement allowing direct operation from logic drivers RoHS Compliant D D! G S D-PAK FQD Series G D S I-PAK FQU Series G "! " "! "! S Absolute Maximum Ratings T C = 5 C unless otherwise noted Symbol Parameter Units S Drain-Source Voltage 00 V I D Drain Current - Continuous (T C = 5 C) 5.5 A Thermal Characteristics - Continuous (T C = 100 C) 3.48 A I DM Drain Current - Pulsed (Note 1) A S Gate-Source Voltage ± 0 V E AS Single Pulsed Avalanche Energy (Note ) 73 mj I AR Avalanche Current (Note 1) 5.5 A E AR Repetitive Avalanche Energy (Note 1) 4.5 mj dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns P D Power Dissipation (T A = 5 C) *.5 W Power Dissipation (T C = 5 C) 45 W - Derate above 5 C 0.36 W/ C T J, T STG Operating and Storage Temperature Range -55 to +150 C T L Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds 300 C Symbol Parameter Typ Max Units R θjc Thermal Resistance, Junction-to-Case C/W R θja Thermal Resistance, Junction-to-Ambient * C/W R θja Thermal Resistance, Junction-to-Ambient C/W * When mounted on the minimum pad size recommended (PCB Mount)

2 Electrical Characteristics T C = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BS Drain-Source Breakdown Voltage = 0 V, I D = 50 µa V BS Breakdown Voltage Temperature / T J Coefficient I D = 50 µa, Referenced to 5 C V/ C I DSS = 00 V, = 0 V µa Zero Gate Voltage Drain Current = 160 V, T C = 15 C µa I GSSF Gate-Body Leakage Current, Forward = 0 V, = 0 V na I GSSR Gate-Body Leakage Current, Reverse = -0 V, = 0 V na On Characteristics (th) Gate Threshold Voltage =, I D = 50 µa V R DS(on) Static Drain-Source = 10 V, I D =.75 A Ω On-Resistance = 5 V, I D =.75 A (Note 4) g FS Forward Transconductance = 30 V, I D =.75 A S Dynamic Characteristics C iss Input Capacitance = 5 V, = 0 V, pf C oss Output Capacitance f = 1.0 MHz pf C rss Reverse Transfer Capacitance pf Switching Characteristics t d(on) Turn-On Delay Time ns = 100 V, I D = 6.5 A, t r Turn-On Rise Time R G = 5 Ω ns t d(off) t f Turn-Off Delay Time Turn-Off Fall Time (Note 4, 5) ns ns Q g Total Gate Charge = 160 V, I D = 6.5 A, nc Q gs Gate-Source Charge = 5 V (Note 4, 5) nc Q gd Gate-Drain Charge nc Drain-Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current A I SM Maximum Pulsed Drain-Source Diode Forward Current A V SD Drain-Source Diode Forward Voltage = 0 V, I S = 5.5 A V t rr Reverse Recovery Time = 0 V, I S = 6.5 A, (Note 4) ns Q rr Reverse Recovery Charge di F / dt = 100 A/µs µc Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature. L = 3.6mH, I AS = 5.5A, = 50V, R G = 5 Ω, Starting T J = 5 C 3. I SD 6.5A, di/dt 300A/µs, BS, Starting T J = 5 C 4. Pulse Test : Pulse width 300µs, Duty cycle % 5. Essentially independent of operating temperature

3 Typical Characteristics I D, Drain Current [A] 10 1 Top : 10 V 8.0 V 6.0 V 5.0 V 4.5 V 4.0 V 3.5 V Bottom : 3.0 V 1. 50μs Pulse Test. T C = 5 I D, Drain Current [A] = 30V. 50μs Pulse Test 10 1, Drain-Source Voltage [V] , Gate-Source Voltage [V] Figure 1. On-Region Characteristics Figure. Transfer Characteristics R DS(on) [Ω], Drain-Source On-Resistance 3 1 = 5V = 10V Note : T J = I D, Drain Current [A] I DR, Reverse Drain Current [A] = 0V. 50μs Pulse Test V SD, Source-Drain voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 800 C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd 1 10 Capacitance [pf] C iss C oss C rss 1. = 0 V. f = 1 MHz, Gate-Source Voltage [V] = 40V = 100V = 160V Note : I D = 6.5 A , Drain-Source Voltage [V] Q G, Total Gate Charge [nc] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

4 Typical Characteristics (Continued) BS, (Normalized) Drain-Source Breakdown Voltage T J, Junction Temperature [ o C] 1. = 0 V. I D = 50 μa R DS(ON), (Normalized) Drain-Source On-Resistance T J, Junction Temperature [ o C] 1. = 10 V. I D = 3.5 A Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 10 Operation in This Area is Limited by R DS(on) 6 5 I D, Drain Current [A] 10 1 DC 1. T C = 5 o C. T J = 150 o C 3. Single Pulse 10 ms 1 ms 100 µs , Drain-Source Voltage [V] I D, Drain Current [A] T C, Case Temperature [ ] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature Z θ JC (t), Therm al Response D= sin g le p u lse N o tes : 1. Z θ JC (t) =.78 /W M ax.. D uty F actor, D = t 1 /t 3. T JM - T C = P DM * Z θ JC (t) P DM t 1 t t 1, S quare W ave P ulse D uration [sec] Figure 11. Transient Thermal Response Curve

5 1V 00nF 50KΩ 300nF Gate Charge Test Circuit & Waveform Same Type as DUT 5V Q gs Q g Q gd 3mA DUT Charge Resistive Switching Test Circuit & Waveforms R L 90% R G 5V DUT 10% t d(on) t r t d(off) tf t on t off Unclamped Inductive Switching Test Circuit & Waveforms L 1 E AS = ---- LI AS BS BS - I D BS I AS R G I D (t) 10V DUT (t) t p t p Time

6 Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + _ I SD L Driver R G Same Type as DUT dv/dt controlled by RG I SD controlled by pulse period ( Driver ) Gate Pulse Width D = Gate Pulse Period 10V I FM, Body Diode Forward Current I SD ( DUT ) di/dt I RM Body Diode Reverse Current ( DUT ) Body Diode Recovery dv/dt V SD Body Diode Forward Voltage Drop

7 Mechanical Dimensions D - PAK Dimensions in Millimeters

8 Mechanical Dimensions I - PAK Dimensions in Millimeters

9 tm tm tm TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic EcoSPARK EfficentMax EZSWITCH * Fairchild Fairchild Semiconductor FACT Quiet Series FACT FAST FastvCore FlashWriter * FPS F-PFS FRFET Global Power Resource SM Green FPS Green FPS e-series GTO IntelliMAX ISOPLANAR MegaBuck MICROCOUPLER MicroFET MicroPak MillerDrive MotionMax Motion-SPM OPTOLOGIC OPTOPLANAR PDP SPM Power-SPM PowerTrench PowerXS Programmable Active Droop QFET QS Quiet Series RapidConfigure Saving our world, 1mW /W /kw at a time SmartMax SMART START SPM STEALTH SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SupreMOS SyncFET The Power Franchise * EZSWITCH and FlashWriter are trademarks of System General Corporation, used under license by Fairchild Semiconductor. TinyBoost TinyBuck TinyLogic TINYOPTO TinyPower TinyPWM TinyWire μserdes UHC Ultra FRFET UniFET VCX VisualMax XS DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation s Anti-Counterfeiting Policy. Farichild s Anti-Counterfeiting Policy is also stated on our external website, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Farichild strongly encourages customers to purchase Farichild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild s quality standards for handing and storage and provide access to Farichild s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Farichild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary No Identification Needed First Production Full Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I37 Rev. A3

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