P-CHANNEL MOSFET Qualified per MIL-PRF-19500/562

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1 Available on commercial versions P-CHANNEL MOSFET Qualified per MIL-PRF-19500/562 DESCRIPTION Qualified Levels: JAN, JANTX, and JANTXV This 2N6804 switching transistor is military qualified up to the JANTXV level for high-reliability applications. Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages. Important: For the latest information, visit our website FEATURES TO-204AA (TO-3) Package JEDEC registered 2N6804 number series. JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/562. (See part nomenclature for all available options.) RoHS compliant version available (commercial grade only). Low-profile metal can design. Military and other high-reliability applications. APPLICATIONS / BENEFITS MAXIMUM T A = +25 ºC unless otherwise stated Parameters / Test Conditions Symbol Value Unit Operating & Storage Junction Temperature Range T J & T stg -55 to +150 C Thermal Resistance Junction-to-Case R ӨJC 1.67 o C/W Total Power T A = +25 T C = +25 C (1) Drain-Source Voltage, dc V DS -100 V Gate-Source Voltage, dc V GS ± 20 V Drain Current, T C = +25 ºC (2) I D A Drain Current, T C = +100 ºC (2) I D2-7.0 A Off-State Current (Peak Total Value) (3) I DM -50 Ω Source Current I S -11 A NOTES: 1. Derated linearly by 0.6 W/ºC for T C > +25 ºC. 2. The following formula derives the maximum theoretical I D limit. I D is limited by package and internal wires and may be limited by pin diameter: 3. I DM = 4 x I D1 as calculated in note 2. P T 4 75 W MSC Lawrence 6 Lake Street, Lawrence, MA Tel: or (978) Fax: (978) MSC Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) Fax: +353 (0) Website: T4-LDS-0113, Rev. 3 (121514) 2012 Microsemi Corporation Page 1 of 7

2 MECHANICAL and PACKAGING CASE: TO-3 metal can. TERMINALS: Solder dipped (Sn63/Pb37) over nickel plated alloy 52. RoHS compliant matte-tin plating is also available. MARKING: Manufacturer s ID, part number, date code, ESD symbol. WEIGHT: Approximately 12.7 grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 2N6804 (e3) Reliability Level JAN = JAN Level JANTX = JANTX Level JANTXV = JANTXV Level Blank = Commercial RoHS Compliance e3 = RoHS compliant (available on commercial grade only) Blank = non-rohs compliant JEDEC type number (see Electrical Characteristics table) Symbol di/dt I F R G V DD V DS V GS SYMBOLS & DEFINITIONS Definition Rate of change of diode current while in reverse-recovery mode, recorded as maximum value. Forward current Gate drive impedance Drain supply voltage Drain source voltage, dc Gate source voltage, dc T4-LDS-0113, Rev. 3 (121514) 2012 Microsemi Corporation Page 2 of 7

3 ELECTRICAL T A = +25 C, unless otherwise noted Parameters / Test Conditions Symbol Min. Max. Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage V GS = 0 V, I D = -1.0 ma V (BR)DSS -100 V Gate-Source Voltage (Threshold) V DS V GS, I D = ma V DS V GS, I D = ma, T J = +125 C V DS V GS, I D = ma, T J = -55 C Gate Current V GS = ± 20 V, V DS = 0 V V GS = ± 20 V, V DS = 0 V, T J = +125 C V GS(th)1 V GS(th)2 V GS(th)3 I GSS1 I GSS ±100 ±200 Drain Current V GS = 0 V, V DS = -80 V I DSS1-25 µa Drain Current V GS = 0 V, V DS = -80 V, T J = +125 C I DSS ma Static Drain-Source On-State Resistance V GS = -10 V, I D = -7 A pulsed r DS(on) Ω Static Drain-Source On-State Resistance V GS = -10 V, I D = -11 A pulsed r DS(on) Ω Static Drain-Source On-State Resistance T J = +125 C r V GS = -10 V, I D = -7 A pulsed DS(on) Ω Diode Forward Voltage V GS = 0 V, I S = A pulsed V SD -4.7 V DYNAMIC CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Gate Charge: On-State Gate Charge V GS = -10 V, I D = -11 A, V DS = -50 V Q g(on) 29.0 nc Gate to Source Charge V GS = -10 V, I D = -11 A, V DS = -50 V Q gs 7.1 nc Gate to Drain Charge V GS = -10 V, I D = -11 A, V DS = -50 V Q gd 21.0 nc V na T4-LDS-0113, Rev. 3 (121514) 2012 Microsemi Corporation Page 3 of 7

4 ELECTRICAL T A = +25 C, unless otherwise noted (continued) SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Turn-on delay time I D = -11 A, V GS = -10 V, R G = 7.5 Ω, V DD = -35 V t d(on) 60 ns Rinse time I D = -11 A, V GS = -10 V, R G = 7.5 Ω, V DD = -35 V t r 140 ns Turn-off delay time I D = -11 A, V GS = -10 V, R G = 7.5 Ω, V DD = -35 V t d(off) 140 ns Fall time I D = -11 A, V GS = -10 V, R G = 7.5 Ω, V DD = -35 V t f 140 ns Diode Reverse Recovery Time di/dt 100 A/µs, V DD -50 V, I F = -11 A t rr 250 ns T4-LDS-0113, Rev. 3 (121514) 2012 Microsemi Corporation Page 4 of 7

5 GRAPHS t 1, Rectangle Pulse Duration (seconds) FIGURE 1 Transient Thermal impedance ID DRAIN CURRENT (AMPERES) Thermal Response (ZӨJC) T C, CASE TEMPERATURE ( C) FIGURE 2 Maximum Drain Current vs Case Temperature T4-LDS-0113, Rev. 3 (121514) 2012 Microsemi Corporation Page 5 of 7

6 GRAPHS (continued) ID DRAIN CURRENT (AMPERES) V DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3 Safe Operating Area T4-LDS-0113, Rev. 3 (121514) 2012 Microsemi Corporation Page 6 of 7

7 PACKAGE DIMENSIONS NOTE: INCHES MILLIMETERS 1. Dimensions are in inches. DIM NOTES MIN MAX MIN MAX 2. Millimeters are given for general information only. A These dimensions should be measured at points.050 B inch (1.27 mm) and.055 inch (1.40 mm) below C seating plane. When gauge is not used measurement D will be made at the seating plane. D The seating plane of the header shall be flat within E DIA..001 inch (0.03 mm) concave to.004 inch (0.10 mm) convex inside a.930 inch (23.62 mm) diameter circle on the center of the header and flat within.001 inch (0.03 mm) concave to.006 inch (0.15 mm) convex overall. F G H J K Radius Mounting holes shall be deburred on the seating L Radius plane side. M DIA. 6. Drain is electrically connected to the case. 7. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. SCHEMATIC T4-LDS-0113, Rev. 3 (121514) 2012 Microsemi Corporation Page 7 of 7

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