Insulated Gate Bipolar Transistor

Transcription

1 Insulated Gate Bipolar Transistor IGBT Features Low voltage drop at high currents Industry standard TO-252 (D-Pak) package 700V breakdown voltage rating Applications White goods Small appliances Lighting controls Motor drives Meter readers Small off-line power supplies General Description The Supertex is a 700V, 3.5amp insulated gate bipolar transistor (IGBT) that combines the positive aspects of both BJTs and MOSFETs. The IGBT has lower on-state voltage drop with high blocking voltage capabilities and features many desirable properties including a MOS input gate, low conduction voltage drop at high currents. Ordering Information Device Package Option TO-252 (D-PAK) K4-G -G indicates that the package is RoHS certified ( Green ) Pin Configuration COLLECTOR GATE EMITTER TO-252 (D-PAK) (K4) Absolute Maximum Ratings Parameter Collector-to-emitter voltage Value 700V Gate-to-emitter voltage ±20V Operating junction and storage temperature range -55 O C to +150 O C Soldering temperature* 300 O C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. Pin Configuration YYWW LLLLLLL YY = Year Sealed WW = Week Sealed L = Lot Number = Green Packaging TO-252 (D-PAK) (K4) * Distance of 1.6mm from case for 10 seconds.

2 Thermal Characteristics Notes: Package I C (continuous) I C (pulsed) Power A = 25 O C θ jc ( O C/W) IGBT TO-252 A 3.5A W Mounted on FR4 board, 25mm x 25mm x 7mm Electrical Characteristics (T A = 25 O C unless otherwise specified) Sym Parameter Min Typ Max Units Conditions θ ja ( O C/W) BV CES Collector-to-emitter breakdown voltage V V GE = 0V, I C = 250µA BV ECS Emitter-to-collector breakdown voltage V V GE = 0V, I C = ma V GE(th) Gate threshold voltage V V CE = V GE, I C = ma V CE Collector-to-emitter voltage drop V I C = 3.0A, V GE = 13V g fe Forward transconductance mho V CE, I C = A I CES Zero gate voltage collector current µa V GE = 0V, V CE = 600V I GES Gate-to-emitter leakage current - - ±100 na V GE = ±20V, V CE = 0V I C(ON) On-state collector current A V GE = 10V, V CE t d(on) Turn-on delay time t r Rise time t d(off) Turn-off delay time t f Fall time C ISS Input capacitance C OSS Output capacitance C RSS Reverse transfer capacitance Notes: All D.C. parameters 100% tested at 25 O C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) All A.C. parameters sample tested. ns pf V CC R GEN = 25Ω R L = 11Ω V CE V GE = 0V f = 1MHz Switching Waveforms and Test Circuit INPUT 0V -10V 90% PULSE GENERATOR V DD R L OUTPUT t (ON) t (OFF) R GEN t d(on) t r t d(off) t F OUTPUT V DD INPUT D.U.T. 0V 90% 90% 2

3 Typical Performance Waveform Equivalent Circuit C IGBT Current (A) G - -0E E-06 0E E-06 0E-05 Time (5µs/div) E Saturation Characteristics IC (A) V GE =5V V GE =8V V GE =7V V GE =9V V GE =6V V GE =4V V GE =10V V CE (V) Transfer Characteristics IC (A) o C o C o C V GE (V) 3

4 IGBT V GE(TH) Variation with Temperature V GE(th) (normalized) V Temperature ( o C) BV CES Variation with Temperature BV CES (normalized) BV Temperature ( o C) Transconductance vs. Collector Current Gfs (siemens) o C o C 125 o C I C (A) 4

5 IGBT 3-Lead TO-252 D-PAK Package Outline (K4) E b3 E1 A c2 4 L3 θ1 D1 H D L4 L5 Note 1 b2 e b View B Front View Rear View Side View L2 Gauge Plane θ L L1 A1 Seating Plane View B Note: 1. Although 4 terminal locations are shown, only 3 are functional. Lead number 2 was removed. Dimension (inches) Symbol A A1 b b2 b3 c2 D D1 E E1 e H L L1 L2 L3 L4 L5 θ θ1 MIN * * O 0 O NOM BSC REF BSC MAX * * O 15 O JEDEC Registration TO-252, Variation AA, Issue E, June * This dimension is not specified in the original JEDEC drawing. The value listed is for reference only. Drawings not to scale. Supertex Doc. #: DSPD-3TO252K4, Version D (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate product liability indemnification insurance agreement. Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. website: http// All rights reserved. Unauthorized use or reproduction is prohibited. Doc.# DSFP- A Bordeaux Drive, Sunnyvale, CA Tel: